AOC2411
30V
General Description
P-Channel MOSFET
Product Summary
The AOC2411 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.
Vds
ID (at VGS=-4.5V)
-30V
-3.4A
RDS(ON) (at VGS=-4.5V) < 45mΩ
RDS(ON) (at VGS=-2.5V) < 60mΩ
WLCSP 1.6x1.6_4
Bottom View
3
Equivalent Circuit
Top View
D
2
D
D
S
G
4
Pin1(G)
1
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Maximum
-30
Units
V
VGS
±12
V
ID
-3.4
Source Current (Pulse) Note2
ISM
-52
Power Dissipation Note1 T =25°C
A
PD
0.8
Junction and Storage Temperature Range
TJ, TSTG
Gate-Source Voltage
Source Current (DC)
Note1
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient Note1
Maximum Junction-to-Ambient Note1
Maximum Junction-to-Foot(Drain)
TA=25°C
Symbol
t ≤ 5s
Steady-State
Steady-State
RθJA
RθJF
A
W
-55 to 150
Typ
75
130
16
Max
90
155
20
°C
Units
°C/W
°C/W
°C/W
Note 1. Mounted on minimum pad PCB
Note 2. PW <300 µs pulses, duty cycle 0.5% max
Rev 1 : August 2012
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Page 1 of 5
AOC2411
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Source-Source Breakdown Voltage
IDSS
Zero Gate Voltage Source Current
Conditions
Min
ID=-250µA, VGS=0V
-30
Typ
Max
V
VDS=-30V, VGS=0V
-1
TJ=55°C
IGSS
Gate leakage current
VDS=0V, VGS=±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250µA
RDS(ON)
Static Source to Source On-Resistance
VGS=-4.5V, ID=-1A
TJ=125°C
VGS=-2.5V, ID=-1A
µA
-5
-0.6
Units
-1
±100
nA
-1.4
V
37
45
52
63
45
60
mΩ
gFS
Forward Transconductance
VDS=-5V, ID=-1A
7.5
VFSD
Diode Forward Voltage
ID=-1A,VGS=0V,
-0.7
-1
V
1253
1630
pF
167
220
pF
105
150
pF
16.7
34
Ω
12.5
20
nC
DYNAMIC PARAMETERS Note1
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-15V, f=1MHz,
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Note1
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=-4.5V, VDS=-10V, ID=-1A
2
Qgd
Gate Drain Charge
3.2
tD(on)
Turn-On DelayTime
14
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
Turn-Off Fall Time
tf
trr
Body Diode Reverse Recovery Time
Note 1: Guaranteed by design
VGS=-4.5V, VDS=-10V, RL=10Ω,
ID=1A, RGEN=6Ω
IF=-1A, dI/dt=100A/µs
S
nC
nC
25
12
20
150
225
72
110
14.5
30
ns
ns
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Rev 1 : August 2012
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Page 2 of 5
AOC2411
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
60
-10V
-6V
30
-4.5V
40
25
-ID(A)
-2.5V
-ID (A)
VDS=-5V
35
50
30
20
125°C
15
20
25°C
10
10
5
VGS=-1.5V
0
0
0
1
2
3
4
5
0
0.5
60
1.5
2
2.5
3
1.6
Normalized On-Resistance
55
RDS(ON) (mΩ
Ω)
1
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
VGS=-2.5V
50
45
40
35
1.4
VGS=-4.5V
ID=-1A
1.2
VGS=-2.5V
ID=-1A
1
VGS=-4.5V
30
0.8
0
2
4
6
8
0
-IS (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
100
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
ID=-1A
1.0E+00
80
125°C
125°C
-IS (A)
RDS(ON) (mΩ
Ω)
1.0E-01
60
40
1.0E-02
1.0E-03
25°C
1.0E-04
20
25°C
1.0E-05
0
1.0E-06
0
2
4
6
8
10
0.0
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev 1 : August 2012
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0.2
0.4
0.6
0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
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AOC2411
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1600
VDS=-10V
ID=-1A
Ciss
4
Capacitance (pF)
-VGS (Volts)
1200
3
2
800
Crss
400
1
Coss
0
0
0
3
6
9
12
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
0
100.0
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
TJ(Max)=150°C
TA=25°C
100µs
RDS(ON)
limited
30
50
10µs
10.0
5
40
1.0
10ms
DC
Power (W)
-ID (Amps)
1ms
30
20
100ms
0.1
10
TJ(Max)=150°C
TC=25°C
0.0
0
0.01
0.1
1
10
100
0.001
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.01
0.1
1
10
100
1000 10000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/(Ton+T)
TJ,PK=TA+PD.ZθJA.RθJA
RθJA=155°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
Rev 1 : August 2012
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
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10
100
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1000