2N5781
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
SILICON EPITAXIAL
PNP TRANSISTOR
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
General-Purpose types for Switching
and Linear-Amplifier Applications
0.89
max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
FEATURES
• Low saturation voltages
5.08 (0.200)
typ.
• Maximum Safe area of operation curves
2.54
(0.100)
2
1
• High gain at high current
3
• High breakdown voltages
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
The 2N5781 is intended for medium-power
switching and complementary-symmetry
audio amplifier applications.
45°
TO39 (TO205AD) Package
PIN 1 – Emitter
PIN 2 – Base
PIN 3 – Case
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
VCER(BR)
VCEO(BR)
VEBO
IC
IB
PT
Collector – Base Voltage
Collector – Emitter Breakdown Voltage RBE = 100Ω
Collector – Emitter Breakdown Voltage
Emitter – Base Voltage
Continuous Collector Current
Continuous Base Current
Total Device Dissipation At Case Temperatures up to = 25°C
At Ambient Temperatures up to = 25°C
TJ , TSTG
Operating Junction and Storage Temperature Range
-80V
-80V
-65V
-5V
-3.5A
-1A
10W
1W
–65 to +200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 6659
Issue 1
2N5781
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
ICER
Collector Cut-off Current
ICEX
Collector Cut-off Current
ICEO
Test Conditions
VCE = -65V
Min.
Typ.
Max.
- 10
Unit
μA
RBE = 100Ω
TC = 150°C
- 1.0
mA
VCE = - 75V
VBE = -1.5V
- 10
μA
RBE = 100Ω
TC = 150°C
- 1.0
mA
Collector Cut-off Current
VCE = -50V
IB = 0
- 100
μA
IEBO
Emitter Cut-off Current
VBE = - 5V
IC = 0
- 10
μA
hFE*
DC Current Gain
VCE = -2V
IC = -1.0A
20
VCE = -2V
IC = -3.2A
4
VCEO(BR)*
Collector – Emitter Breakdown Voltage
IC =- 10mA
IB = 0
- 65
VCER(BR)*
Collector – Emitter Breakdown Voltage
IC = -10mA
RBE = 100Ω
- 80
VBE
Base – Emitter Voltage
VCE = -2V
IC = -1.0A
- 1.5
VCE(sat)
Collector – Emitter Saturation Voltage
IC = -1.0A
IB = - 0.1A
- 0.5
fT
Transition Frequency
VCE = - 2V
IC = - 0.1A
f = 4MHz
hfe
IC = -0.1mA
8
100
—
V
60
Small Signal Common – Emitter
VCE = -2V
Current Gain
f = 1.0kHz
tON
Saturated Switching Time
VCC= -30V
IB1 = IB2
0.5
tOFF
Turn-off Time
IC = -1.0A
IB = - 0.1A
2.5
RθJC
Thermal Resistance Junction – Case
17.5
RθJA
Thermal Resistance Junction – Ambient
175
V
MHz
—
25
μs
°C/W
NOTES
1.
* Pulse Test: tp = 300μs, δ = 1.8%.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 6659
Issue 1