VN2106
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
General Description
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The Supertex VN2106 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
High input impedance and high gain
Applications
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Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Ordering Information
Device
Package Option
VN2106
TO-92
VN2106N3-G
BVDSS/BVDGS
RDS(ON)
(V)
(max)
(Ω)
60
4.0
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Pin Configuration
Parameter
Value
Drain-to-Source voltage
BVDSS
Drain-to-Gate voltage
BVDGS
Gate-to-Source voltage
±20V
Operating and storage temperature
Soldering temperature*
+300°C
Distance of 1.6mm from case for 10 seconds.
SOURCE
GATE
-55°C to +150°C
Absolute Maximum Ratings are those values beyond which damage to
the device may occur. Functional operation under these conditions is not
implied. Continuous operation of the device at the absolute rating level
may affect device reliability. All voltages are referenced to device ground.
*
DRAIN
TO-92 (N3)
Product Marking
SiVN
2 1 0 6
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92 (N3)
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
VN2106
Thermal Characteristics
ID
ID
Power Dissipation
θjc
Package
(continuous)†
(mA)
(pulsed)
(A)
@TC = 25OC
(W)
( C/W)
TO-92
300
1.0
1.0
125
O
( C/W)
IDR†
(mA)
IDRM
170
300
1.0
O
θja
(A)
Notes:
† ID (continuous) is limited by max rated Tj .
Electrical Characteristics (T = 25°C unless otherwise specified)
A
Sym
Parameter
Min
Typ
Max
Units
BVDSS
VGS(th)
Drain-to-source breakdown voltage
60
-
-
V
VGS = 0V, ID = 1.0mA
Gate threshold voltage
0.8
-
2.4
V
VGS = VDS, ID = 1.0mA
Change in VGS(th) with temperature
-
-3.8
-5.5
O
mV/ C
VGS = VDS, ID = 1.0mA
IGSS
Gate body leakage current
-
0.1
100
nA
VGS = ±20V, VDS = 0V
-
-
1.0
IDSS
Zero gate voltage drain current
ID(ON)
On-state drain current
ΔVGS(th)
RDS(ON)
ΔRDS(ON)
100
0.6
-
-
-
4.5
6.0
-
3.0
4.0
-
0.7
1.0
%/OC
VGS = 10V, ID = 500mA
150
400
-
mmho
VDS = 25V, ID = 500mA
Static drain-to-source on-state resistance
Change in RDS(ON) with temperature
CISS
Input capacitance
-
35
50
COSS
Common source output capacitance
-
13
25
CRSS
Reverse transfer capacitance
-
4.0
5.0
td(ON)
Turn-on delay time
-
3.0
5.0
Rise time
-
5.0
8.0
Turn-off delay time
-
6.0
9.0
Fall time
-
5.0
8.0
Diode forward voltage drop
-
1.2
Reverse recovery time
-
400
tf
VSD
trr
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125OC
-
Forward transconductance
td(OFF)
VGS = 0V, VDS = Max Rating
-
GFS
tr
µA
Conditions
A
Ω
VGS = 10V, VDS = 25V
VGS = 5.0V, ID = 75mA
VGS = 10V, ID = 500mA
pF
VGS = 0V,
VDS = 25V,
f = 1.0MHz
ns
VDD = 25V,
ID = 600mA,
RGEN = 25Ω
1.8
V
VGS = 0V, ISD = 600mA
-
ns
VGS = 0V, ISD = 600mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
INPUT
0V
PULSE
GENERATOR
10%
t(ON)
td(ON)
VDD
VDD
90%
t(OFF)
tr
td(OFF)
OUTPUT
RGEN
tF
D.U.T.
10%
10%
RL
INPUT
OUTPUT
0V
90%
90%
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2
VN2106
Typical Performance Curves
Output Characteristics
Saturation Characteristics
2.0
2.0
VGS =
1.6
VGS =
10V
10V
1.6
1.2
8V
0.8
7V
ID (amperes)
ID (amperes)
9V
9V
1.2
8V
0.8
7V
6V
0.4
5V
4V
3V
0
0
20
30
40
VDS (volts)
6V
0
4V
3V
5V
0
50
2
4
6
8
10
VDS (volts)
Power Dissipation vs. Case Temperature
Transconductance vs. Drain Current
0.5
2.0
VDS = 25V
0.4
TA = -55°C
0.3
PD (watts)
GFS (siemens)
10
0.4
25°C
0.2
125°C
TO-92
1.0
0.1
0
0
0
0.2
0.4
0.6
0.8
1.0
0
25
50
ID (amperes)
ID (amperes)
1.0
TO-92 (pulsed)
0.1
0.1
150
1.0
TO-92 (DC)
0.01
125
100
Thermal Response Characteristics
Maximum Rated Safe Operating Area
Thermal Resistance (normalized)
10
75
TC (°C)
T A = 25°C
1
10
VDS (volts)
100
0.8
0.6
0.4
TO-92
PD = 1W
0.2
TA = 25°C
0
0.001
0.01
0.1
1.0
10
tp (seconds)
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3
VN2106
Typical Performance Curves (cont.)
BVDSS Variation with Temperature
1.1
On-Resistance vs. Drain Current
10
VGS = 5V
RDS(ON) (ohms)
BVDSS (normalized)
8
1.0
VGS = 10V
6
4
2
0.9
0
-50
0
50
100
150
0
0.5
1.0
Transfer Characteristics
2.0
2.0
2.5
VGS(th) and RDS(ON) Variation with Temperature
2.0
1.6
VGS(th) (normalized)
TA = -55°C
1.2
0.8
25°C
125°C
RDS(ON) @ 10V, 0.5A
1.6
1.2
1.2
1.0
0.8
VGS(th) @ 1mA
0.8
0.4
0.4
0.6
0
0
0
2
4
6
8
-50
10
50
0
VGS (volts)
150
Tj (°C)
Capacitance vs. Drain-to-Source Voltage
50
100
Gate Drive Dynamic Characteristics
10
f = 1MHz
VDS = 10V
CISS
VGS (volts)
C (picofarads)
8
25
90 pF
6
4
COSS
2
0
0
10
VDS = 40V
30 pF
CRSS
0
20
30
VDS (volts)
40
0
0.2
0.4
0.6
0.8
1.0
QG (nanocoulombs)
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4
RDS(ON) (normalized)
1.4
VDS = 25V
ID (amperes)
1.5
ID (amperes)
Tj (°C)
VN2106
3-Lead TO-92 Package Outline (N3)
D
A
1
Seating Plane
2
3
L
b
e1
e
c
Side View
Front View
E1
E
3
1
2
Bottom View
Symbol
Dimensions
(inches)
A
b
MIN
.170
.014
NOM
-
-
MAX
.210
.022
c
†
.014
†
D
E
E1
e
e1
L
.175
.125
.080
.095
.045
.500
-
-
-
-
-
-
.205
.165
.105
.105
.055
.610*
†
.022
†
JEDEC Registration TO-92.
* This dimension is not specified in the original JEDEC drawing. The value listed is for reference only.
† This dimension is a non-JEDEC dimension.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version D080408.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an
adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the
replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications
are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com.
©2008
All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-VN2106
A122308
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
5