BES
United Monolithic Semiconductors is opening a shared foundry run on BES Schottky diode process .
The launch date for the Multi-Project Wafer is September 16th 2016 .
BES diode process extremely high cut off frequency How to achieve world-class performance? allows very diverse circuit design from high frequency RF power detector to passive balanced mixers for radar signal analysis, for power level control loop to astronomy signal detection beyond
300GHz.
Optimized for low conversion loss, high frequency and high volume high yield MMIC production, BES is widely recommended for the design of mixers, passive receivers and power detector for applications such as Telecommunication Radio or
Automotive Collision Avoidance radars and Space
Communication systems.
BES is successfully evaluated for Space use and referenced in the European Preferred Part List by the European Space Agency – see: https://escies.org/epplmanufacturer/show?id=124%20
Designers are invited to share a BES run at an affordable entry price of 1 452€/mm².
Why choose standard MMIC dimensions?
Examples of microwave performance achieved by
UMS catalogue MMICs designed on BES process:
Part Number
Detector
CHE1270-QAG
CHE1260-QAG
Part Number
RF Bandwidth
(GHz)
5-44
12-27
RF Bandwidth
(GHz)
Gain
(dB)
-
-1
Gain
(dB)
Dynamic
(dB)
30
30
P-1dB
(dBm)
Dynamic
(dB)
30
30
Power
(dB)
Case
QFN
QFN
Case
Mixer
CHM2378a99F
Transmit/Receive
CHM1270a98F
76-77
76-77
-7.5
-7.5
0
3.5/0
P1dB: 0dB QFN
UMS catalogue products made on BES
By choosing standard MMIC dimensions which are compatible with QFN high volume packaging capability, your project is on track for future industrial success.
How to participate to this shared foundry run?
So to start designing, please apply on-line for process Design Kit: http://www.ums-gaas.com/foundryservice.php
Before the deadline, please send your layout to: foundry@ums-gaas.com
BES mask tile with available die size (mm)
INFORMATION
DELIVERY
CONDITIONING
Lowest cost guaranteed
Simply provide your layout before September 9th 2016
20 chips
Gel-Pak®
AVAILABLE DIE SIZE
(mm)
MAX RATIO
1 1.4
2.4
3.4
1:3
Die size include 70µm dicing street - Launching date flexibility is +/- 2 weeks
Minimum order is 3mm² - Price is valid until September 9th 2016
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Information to participate to this shared foundry run mktsales@ums-gaas.com
 : +33 (0) 1 69 86 3200
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T a N R e s is t o r

BES
What are the main characteristics of BES ?
Element Parameter Typical value Conditions
D io de ( 1 x 5 µm ) Ideality Facto r n
Jo (A /cm2)
Rs ( Ω )
Vbd (V)
1.2
3e-6
5
-6.5
Vdio de = 0.55V
Idio de = 15 mA
Idio de = -20 µA
M IM C a p.
T a N R e s is t o r
T iWS i R e s is t o r
G a A s R e s is t o r
Vo n (V)
Density (pF/mm²)
Sheet Resistance ( Ω/□)
Sheet Resistance ( Ω/□)
Sheet Resistance ( Ω/□)
0.65
330
30
1000
9
Idio de = -20 µA
@ 1 M Hz
Ft (cut o ff freq.) (GHz) 3000
BES element characteristics
How many dies will I receive and how much does it cost?
You will receive 20 dies of your circuit in Gel-Pak® box from a BES PCM good wafer. The price is based on your circuit dimensions on the mask tile multiplied by the mm² unit price. For example, if your circuit is 1.4 x
2.4 mm², the price is 1.4 x 2.4 x 1 452€ = 4 878€.
Which processes are regularly offered in shared foundry?
UMS propose several regular shared foundry runs per year to allow designers to easily integrate their designs in the fabrication flow and to be ready with the timing of their projects.
2016-2017 Jan
PH25 Low Noise
Apr Jul Oct Jan
HP07 Mesfet
PH10 Low Noise
PPH15X Power
BES Schottky diode
PPH25X Power
LAYOUT SUBMISSION DELIVERY
Yearly planning of all UMS shared foundry runs mktsales@ums-gaas.com
 : +33 (0) 1 69 86 3200
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