DMN1033UCB4
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
Product Summary
Features and Benefits
VSSS
RSS(ON)
IS
TA = +25°C

Built-in G-S protection diode against ESD 2kV HBM.

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
12V
26mΩ @ VGS = 4.5V
5.5 A

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability
Description
NEW PRODUCT
This new generation MOSFET has been designed to minimize the onstate resistance (RSS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power
management applications.
Mechanical Data

Case: U-WLB1818-4

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram

Weight: 0.005 grams (approximate)
Applications

Battery Management

Load Switch

Battery Protection
G1
G2
ESD PROTECTED TO 2kV
S1
S2
Equivalent Circuit
Top View
Ordering Information (Note 4)
Part Number
DMN1033UCB4-7
Notes:
Case
U-WLB1818-4
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
GW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2009
W
Jan
1
2010
X
Feb
2
DMN1033UCB4
Document number: DS36264 Rev. 2 - 2
Mar
3
2011
Y
Apr
4
May
5
2012
Z
Jun
6
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2013
A
Jul
7
Aug
8
2014
B
Sep
9
Oct
O
2015
C
Nov
N
Dec
D
September 2013
© Diodes Incorporated
DMN1033UCB4
Maximum Ratings
Characteristic
Symbol
Value
Drain-Source Voltage
VSSS
12
V
Gate-Source Voltage
VGSS
6
V
IS
5.5
4.5
A
ISM
20
A
Symbol
Value
Units
Continuous Source Current @
VGS = 4.5V TA = +25°C (Note 5)
TA = +25°C
TA = +70°C
Steady
State
NEW PRODUCT
Pulsed Source Current @ TA = +25°C (Notes 5 & 6)
Units
Thermal Characteristics
Characteristic
PD
1.45
W
RJA
88.21
°C/W
TJ, TSTG
-55 to +150
°C
Power Dissipation, @TA = +25°C (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Operating and Storage Temperature Range
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol
Min
Typ
Max
Unit
Test Condition
Source to Source Breakdown Voltage TJ = +25°C
V(BR)SS
12
—
—
V
Zero Gate Voltage Source Current TJ = +25°C
ISSS
—
—
1.0
µA
VSS = 12V, VGS = 0V
Gate-Body Leakage
IGSS
—
—
10
µA
VGS = 6V, VDS = 0V
VGS(th)
0.35
0.5
0.7
V
VSS = 10V, IS = 1.0mA
19.5
20
20.5
21
21.5
22
26
26
27
28
29
30
31
33
mΩ
35
50
VGS = 4.5V, IS = 3.0A
VGS = 4.0V, IS = 3.0A
VGS = 3.7V, IS = 3.0A
VGS = 3.5V, IS = 3.0A
VGS = 3.1V, IS = 3.0A
VGS = 2.5V, IS = 3.0A
VGS = 1.8V, IS = 3.0A
VGS = 1.5V, IS = 3.0A
IS = 1mA, VGS = V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Source -Source On-Resistance
—
RSS(ON)
Forward Transfer Admittance
|Yfs|
—
11
—
S
VSS = 10V, IS = 3.0A
Body Diode Forward Voltage
VF(S-S)
—
0.7
1.0
V
IF = 3.0 A, VGS = 0 V,
Qg
—
37
—
nC
Turn-On Delay Time
tD(on)
—
10
—
ns
Turn-On Rise Time
tr
—
20
—
ns
Turn-Off Delay Time
tD(off)
—
83
—
ns
—
52
—
ns
DYNAMIC CHARACTERISTICS (Note 8)
Total Gate Charge
Turn-Off Fall Time
Notes:
tf
2
VGS = 4.5V, VSS = 10V, IS = 6A
VDD = 6V,
RL = 6.0Ω, IS = 3.0A
2
5. Device mounted on FR4 material with 1-inch (6.45-cm ), 2-oz. (0.071-mm thick) Cu.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN1033UCB4
Document number: DS36264 Rev. 2 - 2
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September 2013
© Diodes Incorporated
DMN1033UCB4
20
12.0
VGS = 6.0V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
16
VGS = 4.5V
VGS = 4.0V
8.0
VGS = 1.5V
VGS = 2.0V
6.0
4.0
VGS = 1.0V
12
TA = 150°C
8
TA = 85°C
TA = 125°C
4
2.0
TA = 25°C
VGS = 0.9V
0
0.5
1
1.5
2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
TA = -55°C
0.06
0.05
0.04
VGS = 1.5V
VGS = 1.8V
0.03
VGS = 4.5V
0.02
VGS = 6.0V
0.01
0
0
2
4
6
8
10
12
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage
VGS = 1.8V
ID = 4.0A
1.2
1.0
0.8
0.6
-50
Document number: DS36264 Rev. 2 - 2
0.3
0.6
0.9
1.2
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
1.5
VGS = 4.5V
0.03
T A = 150°C
TA = 125°C
0.025
TA = 85°C
TA = 25°C
0.02
TA = -55°C
0.015
0.01
4
6
8
10
12
ID, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs. Drain Current and Temperature
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 5 On-Resistance Variation with Temperature
DMN1033UCB4
0
0.035
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
1.6
1.4
0
3
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.0
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
10.0
VDS = 5.0V
VGS = 1.2V
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0
2
0.05
0.045
0.04
0.035
0.03
VGS = 1.8V
ID = 4.0A
0.025
0.02
0.015
0.01
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
September 2013
© Diodes Incorporated
DMN1033UCB4
VGS(th), GATE THRESHOLD VOLTAGE (V)
12
0.7
10
IS, SOURCE CURRENT (A)
0.6
ID = 1mA
0.5
ID = 250µA
0.4
0.3
0.2
TA = 25°C
6
4
0
0
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
IGSS, LEAKAGE CURRENT (nA)
C iss
1000
C oss
C rss
f = 1MHz
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10000
10000
CT, JUNCTION CAPACITANCE (pF)
8
2
0.1
0
2
4
6
8
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
12
1000
T A = 125°C
T A = 150°C
100
10
TA = 85°C
TA = 25°C
TA = -55°C
1
0.1
1
3
5
6
2
4
VGS, GATE-SOURCE VOLTAGE (V)
Figure 10 Gate-Source Leakage Current vs. Voltage
100
R DS(on)
Limited
ID, DRAIN CURRENT (A)
NEW PRODUCT
0.8
PW = 100µs
10
DC
1
PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
PW = 1ms
0.1
TJ(max) = 150°C
TA = 25°C
Single Pulse
DUT on 1 * MRP Board
VGS = 6V
0.01
0.01
0.1
PW = 100µs
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
DMN1033UCB4
Document number: DS36264 Rev. 2 - 2
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DMN1033UCB4
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RJA(t) = r(t) * RJA
RJA = 156°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
100
1,000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
e
D
D
I
N
I
P
1
2
B
A
U-WLB1818-4
Dim
Min
Max
Typ
A
0.62


A2
0.36


b
0.25
0.35
0.30
D
1.75
1.80
1.79
E
1.75
1.80
1.79
e
0.65


All Dimensions in mm
e
E
A
B
b
Ø
x
6
2
A
1
2
A
G
N
IE
T
N
AA
EL
SP
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
1
C
x
4
D
︵ ︶
2
A
Dimensions
C
B
C
D
DMN1033UCB4
Document number: DS36264 Rev. 2 - 2
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Value
(in mm)
0.65
0.30
September 2013
© Diodes Incorporated
DMN1033UCB4
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
NEW PRODUCT
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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DMN1033UCB4
Document number: DS36264 Rev. 2 - 2
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September 2013
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