FC4A22050L - Panasonic Corporation

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FC4A22050L
FC4A22050L
Gate Resistor installed Dual N-Channel MOS Type
Unit: mm
For lithium-ion secondary battery protection circuit
Features
y Low source-source ON resistance:Rss(on)typ .= 19.5 mΩ (VGS = 4.5V)
y CSP package:smallest & thinnest size
y Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol: 11
Packaging
1. Source (FET1)
2. Gate (FET1)
FC4A22050L Embossed type (Thermo-compression sealing):
5 000 pcs / reel (standard)
Panasonic
JEITA
Code
3. Gate (FET2)
4. Source (FET2)
MBGA004-W-1717APA
-
Absolute Maximum Ratings Ta = 25 °C
Internal Connection
Parameter
Symbol
Rating
Unit
VSS
VGS
IS
ISp
PD
Tch
Tstg
24
±12
3.5
35
0.4
150
-55 to +150
V
V
A
A
W
°C
°C
Source-source Voltage
FET1 Gate-source Voltage
FET2 Source Current (DC) *1
Source Current (Pulsed) *1,*2
Total Power Dissipation *1
Overall Channel Temperature
Storage Temperature Range
Thermal Resistance,Channel to Ambient
Note
FET2
3
1
4
Pin Name
Thermal Characteristics
Parameter
FET1
2
Symbol
Rating
Unit
Rth (ch-a)
312
°C/W
1. Source (FET1)
2. Gate (FET1)
3. Gate (FET2)
4. Source (FET2)
*1 Mounted on FR4 board (25.4 mm × 25.4 mm × t1.0 mm).
Surface Mounted on FR4 Board using the minimum recommended
pad size(Cu area = 47 mm 2 including traces).
*2 t = 10 μs, Duty Cycle ≤ 1 %
Publication date: October 2012
Ver. BED
1
FC4A22050L
Electrical Characteristics Ta = 25 °C ± 3 °C
Parameter
Source-source Breakdown Voltage
Zero Gate Voltage source Current
Gate-source Leakage Current
Gate-source Threshold Voltage
Source-source On-State Resistance
Input Capacitance *1
Output Capacitance *1
Reverse Transfer Capacitance *1
Turn-on Delay Time *1,*2
Rise Time *1,*2
Turn-off Delay Time *1,*2
Fall Time *1,*2
Total Gate Charge *1
Gate-Source Charge *1
Gate-Drain Charge *1
Note:
Symbol
Conditions
VSSS
ISSS
IGSS
Vth
RSS(on)1
RSS(on)2
RSS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
IS = 1 mA, VGS = 0 V
VSS = 24 V, VGS = 0 V
VGS = ±8 V, VSS = 0 V
IS = 1.0 mA, VSS = 10 V
IS = 3.0 A, VGS = 4.5 V
IS = 3.0 A, VGS = 3.1 V
IS = 3.0 A, VGS = 2.5 V
Min
Typ
Max
24
0.4
14
15
18
VSS = 10 V, VGS = 0 V, f = 1 MHz
VDD = 10 V, VGS = 0 to 4.0 V
IS = 3 A
VDD = 10 V, VGS = 4.0 to 0 V
IS = 3 A
VDD = 10 V, VGS = 0 to 4.0 V,
IS = 3.5 A
0.85
19.5
23
27
1 780
410
407
0.8
1.5
6
3
15
4.1
3.8
1.0
±10
1.5
28
32
37
Unit
V
μA
μA
V
mΩ
pF
μs
μs
nC
*1 Assured by design
*2 See Test circuit
DESTRUCTION CURRENT
Condition
Operation test
Destruction current
VGS = 3.8 V
t = 3 ms, IS = 40 A
VGS = 3.8 V
t = 11 ms, IS = 15 A
VGS = 3.8 V
t = 3 ms
VGS = 3.8 V
t = 11 ms
Result
PASS
PASS
55 A
35 A
Ta = 25 °C,
Mounted on FR4 board (25.4 × 25.4 × t1.0 mm).
Surface Mounted on FR4 Board using the minimum recommended
pad size(Cu area = 47 mm 2 including traces).
Ver. BED
2
FC4A22050L
VDD = 10 V
*2 Test circuit
RL = 2.5 Ω
IS = 3.0 A
Vout
S2
4V
PW = 10 μs
D.C. ≤ 1 %
Vin
0V
G2
G1
Vin
50 Ω
S1
90 %
Vin
10 %
90 %
Vout
10 %
td(on) tr
td(off)
Ver. BED
tf
3
FC4A22050L
10
14
4.5 V
VSS = 10 V
12
10
8
VGS = 2.5 V
6
3.8 V
4
2
1
Source Current IS (A)
Source Current IS (A)
3.1 V
0.1
25 °C
Ta = 85 °C
0.01
Single Pulse
Single Pulse
0
0.001
0
0.5
1
Source-source Voltage VSS (V)
0
1.5
0.5
1
1.5
Gate-source Voltage VGS (V)
IS - VSS
80
Source-source On-state Resistance
RSS(on) (mΩ)
Source-source On-state Resistance
RSS(on) (mΩ)
2
IS - VGS
80
IS = 3.0 A
60
Ta = 85 °C
40
20
25 °C
- 40 °C
0
VGS = 2.5 V
60
3.1 V
40
3.8 V
20
4.5 V
0
0
1.5
3
4.5
0
5
Gate-source Voltage VGS (V)
10
15
Source Current IS (A)
RSS(on) - VGS
RSS(on) - IS
1.E-02
Gate-source Leakage Current IGS (A)
100
Single Pulse
Diode Forward Current IF (A)
-40 °C
10
Ta = 85 °C
- 40 °C
1
25 °C
0.1
0.01
0
0.5
1
1.5
Body Diode Forward Voltage VF(s-s) (V)
IF - VF(s-s)
1.E-03
Ta = 85 °C
1.E-04
25 °C
1.E-05
1.E-06
-40 °C
1.E-07
1.E-08
1.E-09
1.E-10
0
3
6
9
12
Gate-source Voltage VGS (V)
15
IGS - VGS
Ver. BED
4
5
1.E-03
VSS = 8 V
1.E-04
1.E-05
Gate-source Voltage VGS (V)
Zero Gate Voltage source Current ISSS (A)
FC4A22050L
Ta = 125 °C
1.E-06
85 °C
1.E-07
1.E-08
25 °C
1.E-09
4
10 V
3
12 V
2
1
- 40 °C
1.E-10
0
0
10
20
30
Source-source Voltage VSS (V)
40
0
ISSS - VSS
5
10
15
Total Gate Charge Qg (nC)
20
Dynamic Input/Output Characteristics
10
Normalized Effective Transient
Thermal Impedance
tp
tp
D=―
T
1
T
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
Ta = 25 °C,
Mounted on FR4 board
(25.4 × 25.4 × t1.0 mm)
Surface Mounted on FR4 Board
using the minimum
recommended pad size
2
(Cu area = 47 mm including traces)
0.1
1
10
100
Square Wave Pulse Duration (s)
Thermal Response
100
Limited by
RSS(on) (VGS = 3.8 V)
Single Pulse
IS Source Current (A)
Thermal Resistance Rth (°C/W)
1000
100
10
1
Ta = 25 °C,
Mounted on FR4 board (25.4 × 25.4 × t1.0 mm)
Surface Mounted on FR4 Board using the minimum
10
1
PW = 500 μs
1 ms
3 ms
0.1
0.01
recommended pad size(Cu area = 47 mm 2 including traces)
0.1
0.0001 0.001
0.1
1
10
100
1000
Pulse Width tsw (s)
100 ms
1s
DC
(Cu area = 47 mm2 including traces)
0.001
0.01
11 ms
Ta = 25 °C,
Mounted on FR4 board
(25.4 × 25.4 × t1.0 mm).
Surface Mounted on FR4 Board using
the minimum recommended pad size
0.1
1
10
100
Source-source Voltage (V)
Rth -tsw
Safe Operating Area
Ver. BED
5
FC4A22050L
MBGA004-W-1717APA
Unit: mm
Land Pattern (Reference) (Unit: mm)
Ver. BED
6
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with
your using the products described in this book for any special application, unless our company agrees to your using the products in
this book for any special application.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
20100202
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