HT-3201-R

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PRELIMINARY
HT-3201-R
1.2 kV, 3.6 mΩ Silicon Carbide
High Performance Half-Bridge Power Module
VDS
Esw, Total @ 600V, 300A
RDS(on)
CPM2 MOSFETs and Z-Rec® Diodes with RTD
Features
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1.2 kV
9.3 mJ
3.6 mΩ
Package
Ultra-Low Loss, Low Inductance
High-Frequency, Ultra-Fast Switching Operation
Zero Reverse Recovery Current from Diode
Zero Turn-Off Tail Current from MOSFET
Normally-Off, Fail-Safe Device Operation
AlSiC Baseplate
Ease of Paralleling
High Temperature Packaging, TJ(max) = 175 °C
AS9100 / ISO9001 Certified Manufacturing
System Benefits

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Enables Compact, Lightweight Systems
High Efficiency Operation
Reduced Thermal Requirements
Reduced System Cost
Applications
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
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High-Efficiency Converters / Inverters
Motor & Traction Drives
Smart-Grid / Grid-Tied Distributed Generation
Part Number
Package
HT-3201-R
62 mm Mounting
Maximum Ratings (Tc = 25 °C Unless Otherwise Specified)
Symbol
VDSmax
Drain – Source Voltage
VGSop
Gate-Source Voltage
Value
Unit
1.2
kV
-5/+18
V
424
ID
Continuous Drain Current
PD
Maximum Power Dissipated
3000
TC(max)
Maximum Case Temperature
225
TJ(max)
Maximum Junction Temperature
175
Tstg
1
Parameter
Storage Temperature Range
HT-3201-R Rev. 2.1, 04/2016
195
-55 to 175
A
W
°C
Test Conditions
Recommended Operational Values
TC = 25 °C, TJ = 150 °C
TC = 125 °C, TJ = 150 °C
TC = 25 °C TJ = 175 °C
PRELIMINARY
Switch Position Electrical Characterization (Tc = 25 °C Unless Otherwise Specified)
Symbol
V(BR)DSS
VGS(th)
Parameter
Drain – Source Breakdown
Voltage
Gate Threshold Voltage
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
Min.
Typ.
Max.
1.2
1.3
Unit
kV
2.3
4
1.6
720
3.5
V
μA
3.6
RDS(on)
Drain-Source Turn-On Resistance
Test Conditions
mΩ
6.9
EOn
Turn-On Switching Energy
5.6
mJ
EOff
Turn-Off Switching Energy
3.7
mJ
Ciss
Input Capacitance
19,516
Coss
Output Capacitance
1,540
Crss
Qgs
Reverse Transfer Capacitance
Gate to Source Charge
105
Qgd
Gate to Drain Charge
350
Qg
Total Gate Charge
VDS = 10 V, ID= 87.5 mA
VDS=10 V, ID=87.5 mA,TJ=175C
VGS = -5 V, VDS = 1200 V
VGS = 20 V, VDS = 0 V
VGS = 20 V, ID = 400 A
VGS = 20 V, ID = 400 A,
TJ = 150 C
VDS = 600 V, VGS = -5/+20 V
ID = 300 A, RG = 2 Ω
pF
VGS = 0 V, VDS = 1000 V
f = 1 MHz, VAC = 25 mV
MOSFETs only
nC
VGS = -5 V / 20 V , VDS = 800 V
ID = 50 A
Per IEC60747-8-4
322
1,127
Diode Position Electrical Characterization (Tc = 25 °C Unless Otherwise Specified)
Symbol
VFM
Parameter
Forward Voltage
Min.
Typ.
1.6
1.8
2.05
2.3
Current1
IR
Reverse
QC
Capacitive Charge1
Max.
Unit
V
720
Test Conditions
IF = 350 A
IF = 350 A, TJ = 150 C
μA
VR = 1200 V
3.5
nC
VR = 400 V
Max.
Unit
Thermal & Mechanical Characteristics
Symbol
RΘ(J-C)
2
Parameter
FET Thermal Resistance, J to C
Min.
Typ.
0.085
0.10
°C/W
W
Weight
140
g
MS
Mounting Torque
1.1
N-m
HT-3201-R Rev. 2.1, 04/2016
Test Conditions
M4 Bolts
PRELIMINARY
Typical Performance
Fig 1. Output characteristics
Fig 2. On-Resistance vs. Drain Current
Fig 3. Transfer Characteristic
Fig 4. Antiparallel Diode Characteristic, VGS = -5 V.
25.0
16
Conditions:
TJ = 25 °C
VDD = 600 V
RG = 2 Ω
VGS = -5/+20 V
L = 33 μH
12
10
Conditions:
TJ = 25 °C
VDD = 800 V
RG = 2 Ω
VGS = -5/+20 V
L = 33 μH
20.0
ETotal
Switching Loss (mJ)
Switching Loss (mJ)
14
EOn
8
6
EOff
4
15.0
ETotal
EOn
10.0
EOff
5.0
2
0
0.0
0
100
200
300
400
Drain to Source Current, IDS (A)
Fig 5. Switching Energy RG = 2Ω VDD = 600V
3
HT-3201-R Rev. 2.1, 04/2016
500
0
100
200
300
400
Drain to Source Current, IDS (A)
Fig 6. Switching Energy RG = 2Ω VDD = 800V
500
PRELIMINARY
40.0
Conditions:
TJ = 25 °C
VDD = 600 V
IDS = 300 A
VGS = -5/+20 V
L = 33 μH
35.0
Switching Energy (mJ)
30.0
25.0
ETotal
EOn
20.0
15.0
EOff
10.0
5.0
0.0
0
2
4
6
8
Gate Resistance, RG (Ω)
10
12
Fig 7. Switching Energy vs Gate Resistance, ID = 300A
Package Dimensions (mm)
Fig. 8 Dimensions
4
HT-3201-R Rev. 2.1, 04/2016
PRELIMINARY
Module Application Note
The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based
modules. Therefore, special precautions are required to realize the best performance. The interconnection
between the gate driver and module housing needs to be as short as possible. This will afford the best
switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum
inductance between the module and link capacitors to avoid excessive VDS overshoots.
Some values were obtained from the CPM2-1200-0025B Rev. B and CPW5-1200-Z050B Rev. A device
datasheet. The companion, form-fitting gate driver for this module is the ITGD2-3001.
Important Notes
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY,
FUNCTION, DESIGN OR OTHERWISE.
THE PRODUCT DESCRIBED IS AN ENGINEERING SAMPLE THAT IS NOT INTENDED FOR PRODUCTIVE USE, IS
CURRENTLY AVAILABLE FOR EVALUATION AND TESTING PURPOSES ONLY, AND IS PROVIDED “AS IS”
WITHOUT WARRANTY OF ANY KIND, INCLUDING BUT NOT LIMITED TO ANY WARRANTY OF NONINFRINGEMENT, MERCHANTABILITY, OR FITNESS FOR PARTICULAR PURPOSE. Suitability of this product for
any application may depend on product parameters not specified this document. The buyer is solely responsible for
determining such additional product details.
The data and information contained in this document is preliminary and is subject to change due to further product
evaluation and testing and/or product modifications. Accordingly, buyers are cautioned to evaluate actual products
against their needs and not to rely solely on the data and information presented in this document.
The product described has not been designed or tested for use in, and is not intended for use in, applications implanted
into the human body or in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac
defibrillators or similar emergency medical equipment, vehicle navigation, communication or control systems, or air traffic
control systems.
The product described is not eligible for Distributor Stock Rotation or Inventory Price Protection.
Copyright © 2014 - 2016 Cree Fayetteville, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree®, and Zero Recovery® are registered trademarks and the Cree logo is a
trademark
of Cree,
Inc. Rev. 2.1, 04/2016
5
HT-3201-R
For Purchasing: Email [email protected]
Cree Fayetteville, Inc.
535 W Research Center Blvd
Fayetteville, AR 72701
USA Tel: +1.479.443.5759
www.apei.net
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