SRM UNIVERSITY
Faculty of Engineering and Technology
DEPARTMENT OF E&I
Course Code
Course Title
Year& Semester
Course duration
Location
:
:
:
:
:
EI0102
ELECTRONIC DEVICES
I YEAR / II semester
EVEN semester
Kattankulathur Campus
Faculty Details:
Name of the staff
Section
Office
Office Hours
Mail ID
8.30-4.00 pm
Indirani.s@ktr.srmuniv.ac.in
Ms.S.INDIRANI
A
15th floor
staff room
No:II
P.JEKAN
B
1503/A
8.30-4.00 pm
jegan.p@ktr.srmuniv.ac.in
Mr.B.VINOTHKUMAR
C
1503/A
8.30-4.00 pm
Vinothkumar.b@ktr.srmuniv.ac.in
8.30-4.00 pm
Kannan.g@ktr.srmuniv.ac.in
TH
G.KANNAN
D
15
FLOOR
Required Text Books:
1.Millman & Halkias, Electronic devices & Circuits, tata McGraw Hill Int. Ltd.,1994
2.G.K.Mithal, electronic Devices & circuits, Khanna Publishers, 1999.
3. Sedha, A Text book of Applied Eletronic, S.Chand Publications.
4.Salivahanan, Electronic Devices & circuits, Tata Mcgraw Hill publishing Ltd.
Web Resource:
1. http://www.electronics-tutorials.ws/
2. www.elctronicsforu.com
Prerequisite :
To have a basic knowledge of electronics engineering
Objective:
1. To develop a strong foundation in the field of electronic devices
2. To have a thorough knowledge about the characteristics of any electronic device .
3. To analyse and design any real time application
Tentative test details and portions:
Cycle Test - I:
Cycle Test –II:
Model Exam:
Unit I & II
Unit III & IV
All five units
Assessment details
Cycle test I
Cycle test II
Model test
Surprise test
Attendance
TOTAL
10 marks
10 marks
20 marks
5marks
5 marks
50 marks
Outcomes
Students who have successfully completed this course
Course outcome
1. To develop a strong foundation in the field of
electronics
2.To understand the fundamental concepts of
semiconductors
3.To logically analyse any electronic circuit
4.To apply the logic for any application in the
electronic field.
Program outcome
1. To understand the operation of intrinsic &
extrinsic semiconductors.
2. To analyse the operation & characteristics of
various diodes.
3. To analyse the construction & operation of
BJT, FET & Thyristors.
4. To know the fabrication of IC’s.
Detailed Session Plan
Day
DAY 1
DAY 2
DAY 3
DAY 4
DAY 5
DAY 6
DAY 7
DAY 8
DAY 9
DAY 10
DAY 11
Name of the topics
Reference
UNIT-I: Fundamentals of
semiconductors
Millman & Halkias
Fermi Level
Energy band diagram
Generation & Recombination of carriers
Intrinsic & extrinsic semiconductors
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
Majority & minority charge carriers
Mobile charge carriers & Immobile ions
Drift currents
Diffusion currents
Surprise Test- I
UNIT II: Description & working of a
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
PN diode
DAY 12
DAY 13
Derivation of Diode equation
Avalanche & zener breakdown
Millman & Halkias
Millman & Halkias
DAY 14
DAY 15
DAY 16
DAY 17
Description of varactor diode
Description of Tunnel diode
Description of PIN diode
Characteristics of photodiode ,photovoltaic
cell & LDR
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
DAY 18
Characteristics of LED, Liquid crystal
cell & seven segmental display
Characteristics of opto couplers & laser
diode
Millman & Halkias
DAY 19
DAY 20
DAY 21
DAY 22
DAY 23
DAY 24
DAY 25
DAY 26
DAY 27
DAY 28
DAY 29
DAY 30
DAY 31
DAY 32
DAY 33
DAY 34
DAY 35
DAY 36
DAY 37
DAY 38
DAY 39
DAY 40
DAY 41
DAY 42
DAY 43
DAY 44
DAY 45
DAY 46
DAY 47
Surprise Test-II
UNIT III: Construction of a transistor
Operation of a transistor in cutoff, active &
saturation region.
Input & output characteristics of CE
configuration
Input & output characteristics of CB
configuration
Input & output characteristics of CC
configuration
Evaluation of H parameters
Hybrid model of a transistor under CE
configuration
Transistor as a switch
Transistor as a heat sink
UNIT IV: Operation of a JFET
VA characteristics of JFET
Small signal model of JFERT
Operation of a MOSFET
VA characteristics of MOSFET & Gate
capacitance
MOS as a charge transferring Device
CCD, BBD
Power MOSFET
Unijunction Transistor
Surprise Test-III
UNIT V: Operation & VI char of SCR
Operation & VI char of DIAC &
TRIAC
Operation & VI char of GTO
Introduction to IC fabrication
Fabrication of NMOS with Diffusion, Ion
implantation & vapour deposition
Fabrication of PMOS with Diffusion, Ion
implantation & vapour deposition
Fabrication of CMOS using Twin tub
process
CMOS Thick film Technology
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias
Millman & Halkias