Silicon Phototransistor
OP580
Features:
•
•
•
•
Wide acceptance angle
Fast response time
Plastic leadless chip carrier (PLCC)
Moisture Sensitivity Level: MSL2 or >
Description:
The OP580 is an NPN silicon phototransistor mounted in a miniature SMD package. The device has a flat window
lens, which enables a wide acceptance angle. It is packaged in a plastic leadless chip carrier that is compatible
with most automated mounting equipment. The OP580 is mechanically and spectrally matched to the OP280
infrared LED.
Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.
Applications:
•
•
Non-contact position sensing
Datum detection
Ordering Information
•
•
Part
Number
OP580
Machine automation
Optical encoders
Sensor
Phototransistor
Viewing
Angle
100°
Lead
Length
N/A
1
2
DIMENSIONS ARE IN:
RoHS
Pin #
Transistor
1
Collector
2
Emitter
[MILLIMETERS]
INCHES
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue 1.3 05/10
Page 1 of 3
Silicon Phototransistor
OP580
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Storage Temperature Range
-40o C to +85o C
Operating Temperature Range
-25o C to +85o C
260° C(1)
Lead Soldering Temperature
Collector-Emitter Voltage
30 V
Emitter-Collector Voltage
5V
Collector Current
20 mA
75 mW(2)
Power Dissipation
Electrical Characteristics (TA = 25°C unless otherwise noted)
SYMBOL
IC(ON)
VCE(SAT)
ICE0
PARAMETER
MIN
TYP
MAX
UNITS
1.0
-
-
mA
VCE = 5.0 V, EE = 5.0 mW/cm2(3)
Collector-Emitter Saturation Voltage
-
-
0.4
V
IC = 100 µA, EE = 2.0 mW/cm2(3)
Collector-Emitter Dark Current
-
-
100
nA
VCE = 5.0 V, EE = 0(4)
On-State Collector Current
TEST CONDITIONS
V(BR)CEO
Collector-Emitter Breakdown Voltage
30
-
-
V
IC = 100 µA
V(BR)ECO
Emitter-Collector Breakdown Voltage
5
-
-
V
IE = 100 µA
Rise Time , Fall Time
-
15
-
µs
IC = 1 mA, RL = 1 KΩ
tr, tf
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. Derate linearly at 2.17 mW/° C above 25° C.
3. EE(APT) is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than
10% over the entire lens surface of the phototransistor being tested.
4. To calculate typical collector dark current in µA, use the formula ICEO = 10(0.04 Ta-3.4) where Ta is the ambient temperature in ° C.
Relative Response vs Angular Position
100
100
80
80
Relative Response (%)
Relative Response (%)
Relative Response vs Wavelength
60
40
60
40
20
20
0
0
400
500
600
700
800
900
Wavelength (nm)
1000
1100
-90
-60
-30
0
30
60
90
Angular Position (Degrees)
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Issue 1.3 05/10
Page 2 of 3
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Silicon Phototransistor
OP580
Relative On-State Collector Current vs
Irradiance
Relative On-State Collector Current vs
Temperature
140
Normalized at EE = 5 mW/cm2 Conditions: VCE = 5 V,
λ = 935 nm, TA = 25° C
140
130
Relative Collector Current (%)
Relative Collector Current (%)
160
120
100
80
60
40
Normalized at TA = 25° C .
Conditions: VCE = 5 V,
λ = 935 nm, TA = 25° C
120
110
100
90
-40°C
80
70
20
0
1
2
3
4
5
6
7
-25
8
0
2
25
50
75
100
Temperature (°C)
EE rradiance (mW/cm )
Relative On-State Collector Current vs
Collector-Emitter Voltage
Collector-Emitter Dark Current vs
Temperature
1.4
1000
Conditions: Ee = 0 mW/
cm2 VCE = 10V
IC(ON) - On-State Collector Current (mA)
Collector-Emitter Dark Current (nA)
80°C
100
10
1
1.2
2
cm
W/
6m
2
m
W/c
5m
1.0
2
m
4 mW/c
0.8
2
3 mW/cm
0.6
2 mW/cm2
0.4
0.2
1 mW/cm2
0
-25
0
25
50
Temperature (°C)
75
100
0
0.1
0.2
0.3
0.4
0.5
Collector-Emitter Voltage (V)
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue 1.3 05/10
Page 3 of 3