New Product Bulletin
1200V Voltage Resistance SiC MOSFETs
SCT2080KE / SCH2080KE
Provides simultaneous high voltage
resistance, low ON resistance,
high-speed switching, and fast recovery
Product Outline
ROHM’s 1200V SiC MOSFETs provide low loss during high frequency operation. In particular, switching loss is
reduced by 90% compared with Si IGBTs, decreasing both chip size and costs. In addition, improved processes
related to crystal defects and optimized device structure ensure high reliability. ROHM also offers the industry’s
first* SiC MOSFET that integrates an SiC-SBD in the same package for low VF, making it ideal for inverter
applications and more.
*ROHM June 2012 survey
Turn OFF Characteristics
25
Vdd=400V
Rg=5.6Ω
20
15
Switching loss
reduced 90%
Current (A)
ROHM SiC MOSFETs achieve
high-speed switching and high
voltage resistance not possible
with their silicon
counterparts.As a result, turn
OFF loss is reduced by over
90%, while high-speed diode
recovery characteristics reduce
loss by 73% over silicon IGBTs
during operation for minimal
power consumption.
10
Innovations such as gate oxidizing conditions enable an ON resistance
per-unit-area 29% lower than conventional products, resulting in the lowest ON
resistance at 1200V in the TO-247 MOSFET class*. In addition, low ON resistance
is maintained even at high temperatures, and no voltage rise ensures low loss
even during light loads.
VDS-ID (Ta=25°C)
30
Si-IGBT
5
SiC-MOSFET
0
50
ID (A)
Time (nsec)
10
100
(30kHz over) operation,
contributing to end-product
miniaturization.
ON Loss
OFF Loss
Conduction Loss
0
80
73% lower loss
60
1
2
15.90
20.95
20
SiC-MOSFET
7.95
SiC-MOSFET and SiC-SBD integrated into a
single package
ROHM’s SCH2080KE SiC MOSFET integrates
an SiC-SBD for low VF, reduced switching loss,
low ON resistance, and low recovery loss,
making it ideal for inverter applications. In
addition, fewer components are required,
contributing to greater space savings.
3.00
20.18
Si-IGBT
Drain
3
VDS (V)
External Dimensions
vs. IGBT
40
0
0
Si SJMOS
900V
15
SiC JFET
1200V
4
1.98
5.03
1.20
2.03
5.45
SiC-MOSFET (Vgs=18V)
SJ MOS (Vgs=10V)
IGBT (Vgs=15V)
SiC JFET (Vgs=3V)
5
5
(Unit : mm)
3.91
used during high-frequency
Loss (W)
peripheral components to be
5
0
0
1
2
3
VDS (V)
4
5
A pplications
• Industrial equipment
• Power conditioners and more
5.62
but also enables smaller
(at 30kHz drive)
6.17
120
3.61
Loss Comparison
4.32
energy savings and efficiency,
SiC-MOSFET
1200V
10
SiC-MOSFET (Vgs=18V)
SJ MOS (Vgs=10V)
IGBT (Vgs=15V)
SiC JFET (Vgs=3V)
3.81
SiC not only provides greater
Si IGBT
1200V
20
Si IGBT
1200V
15
VDS-ID (Ta=150°C)
25
Si SJMOS
900V
20
100 150 200 250 300 350 400 450
30
SiC JFET
1200V
SiC -MOSFET
1200V
25
0
-5
■ VDS-ID characteristics comparison
ID (A)
■ Low switching loss contributes to improved
energy savings and increased miniaturization
3.0°
2.40
<Circuit Examples>
Step-Down Chopper
etc
SiC-MOSFET
Inverter
0.60
Motor
SBD
■ Lineup
Gate
BVDSS
RDS(on)
Package
SCT2080KE
1200V
80mΩ
TO-247
SCH2080KE
1200V
80mΩ
TO-247
Part No.
(SiC-MOSFET)
Source
Body Diode
(SiC-MOSFET+SiC SBD)