Change of topologies by using
SiC JFET Transistors
Dieter Liesabeths
Vice President
Sales & Marketing
SemiSouth Laboratories, Inc.
dieter.liesabeths@semisouth.com
www.semisouth.com
Evolution of SiC Business
UPS/SMPS
Audio
2009
Solar
2007
Traction, Wind
Automotive,
Battery
Chargers
Welding
2011
Avionics,
Down Hole
2005
Military
2000
SemiSouth:
Fab & Headquarters
High Reliability Design from the beginning (28 Patents issued)
SemiSouth Proprietary
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Power Semi Market
by segment
Power Semiconductor Market is growing similarly in all markets….
2013 Total Accessible Market
$6.6 B
2010 Total Accessible Market
$4.9 B
Industrial Power
Supply
8%
Automotive
12%
Appliances
8%
Lighting
5%
Solar, Wind
5%
AC-DC Power
Supply
13%
Industrial Power
Supply
8%
Computing,
Consumer,
DC/DC, &
Comms.
33%
Motor and
Traction Drive
16%
Total Market = $11.6 B
TAM of $4.9 B
Automotive
12%
Appliances
8%
Lighting
4%
Solar, Wind
6%
AC-DC Power
Supply
13%
Computing,
Consumer,
DC/DC, &
Comms.
32%
Motor and
Traction Drive
17%
Total Market = $14.6 B
TAM of $6.6 B
2010-2013 Ramp
SemiSouth Proprietary
Patented Vertical-Channel JFET
 Competitor’s
 Lateral-Channel JFET
Vertical
channel
Lateral
Gate channel
n- Drift Region
4H n+ Substrate
Gate
… Source
Source …
n- Drift Region
Implant
Current Flow
Source
Current Flow
Gate
Implants
 SemiSouth
 Vertical-Channel JFET*
4H n+ Substrate
4.5mm2
Drain
Drain
•
•
•
•
•
SJDP120R085
85mOhm
•
•
•
•
•
(-) 12 mask layers
(-) Cell pitch > 15 m
(-) 3 implants
(-) Epi re-growth
(-) R(on)sp 8 m *cm2
(+) 6 mask layers
(+) Cell pitch < 4 m
(+) 1 implant
(+) No epi re-growth
(+) R(on)sp 2 m *cm2
SemiSouth Proprietary
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SiC Transistor Cost Trend In
1200V Topology
SiC 4“ Wafer
SiC 6“ Wafer
Today: 1k pricing
SiC 8“ Wafer
1 x SJDP120R085 = 17.85USD
2 x IPW60R045 = 16.29USD
Comparison: 1 k price
SiC Sjdp120R085 85mOhm 1200V
ipw60R045 45mOhm, 600V
Based on 1k Dgikey pricing comparison
SemiSouth Proprietary
Back to Simple Topology
 Reduction of Silicon components by changing to SiC Transistors
 Size & mechanics decrease, avoid increase of raw material
 SiC can drive switching frequency even higher to save further cost
 IGBTs (
L0
max98%)
D0
copyright by
at 16 kHz
S1
 12 transistors
D1
S2
S6
S3
D4
S4
2x - 3x
at 32 kHz
L0
L1
S11
L3
D6
S8
1x
S1
S3
S5
S2
S4
S6
C2
C1
S12
D0
 two-level topology
L1
S0
C3
 6 diodes
 6 optocouplers
S10
S7
D2
 6 transistors
S9
D5
C2
 12 optocouplers
max98%)
D3
S0
C0
 12 + 6 diodes
 SiC-FETs (
S5
C1
 three-level topology
1x - 3x
L3
1x
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Further Simplification…
Use of depletion mode jfet further simplifies by eliminating SiC Diode
Cascode symbol
1
1
D
1
C
2
Q
drive
Q
jfet 85mohm with mosfet
SiC diode
Normally off jfet 100mohm
Low voltage mosfet
Normally on jfet 85mohm
Eg 40V 5mohm so-8
Mosfet can be mounted on pcb using thermal vias with small heat spreader
At 20A 50% duty Pdiss = 1W
SemiSouth Proprietary
Further Simplification…
Use of depletion mode jfet further simplifies
SiC-FETs two-level topology
 8 transistors
 7 power diodes
 6 optocouplers
SiC-FETs two-level topology
 8 transistors

 6 optocouplers
 8 low voltage mosfets
Now we have simple circuit, what is limit of switching frequency
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4
Performance Validation
WORLD RECORD Power Conversion Efficiency*
“We now use junction field-effect transistors (JFETs) made of silicon carbide (SiC) manufactured by
SemiSouth Laboratories Inc.. This is the main reason for the improvement”, - Prof. Bruno Burger,
leader of the Power Electronics Group at Fraunhofer ISE, July 2009 press release.
• Single phase Heric®
• Commercial inverters @ 98%
• SemiSouth’s JFET lowers losses ~ 50%
• Three phase full bridge inverter
• SemiSouth JFET boosts efficiency 1.2%
• SemiSouth JFET operates 3X higher freq.
> 99%
* Bruno Burger, Dirk Kranzer, “Extreme High Efficiency PV-Power Converters,” EPE, Barcelona, Spain, 8-10 September 2009
SemiSouth Proprietary
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5kW 3-Phase PV Inverter
600
100
5 kW three-phase SiC - inverter
99
500
commercial available inverters
Power Density / Wdm- 3
98
Efficiency / %
97
96
95
94
93
400
300
200
normally off SiC-JFET, 48 kHz
92
Si-IGBT Generation 4, 16 kHz
91
100
normally off SiC-JFET, 144 kHz
90
0
0
1000
2000
3000
4000
5000
4500
5500
AC-Power / W
6500
7500
8500
9500
AC-Power / W
 3 x Higher switching frequency, 3 x times higher power density
copyright by
 Reduction of weight & size: 25kg -> 12kg, 1/3 of current size
 Reduction of storage space
 Reduction of transportation cost
 Reduction of mounting cost ,1 person needed instead of 2
 Reduction of Cooling system
 Reduction of magnetics
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SMA SiC JFET Inverter

Dr. Regine Mallwitz, SMA: SiC & GaN User Forum, Birmingham 2011
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SMA SiC JFET Inverter

Dr. Regine Mallwitz, SMA: SiC & GaN User Forum, Birmingham 2011
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Bidirectional Battery Chargers
 Three Level topology
 Two-phase DC/DC
 300 - 500 V battery voltage
 22 kW nominal power
 Normally-off SiC-JFETs
 340 x 230 x 100 mm = 7,82 l
charging efficiency
 22 kW/ 7,82l = 2,81 kW/l.
100
 22 kW/ 9,5kg = 2,3 kW/kg
99
98
 Maximum efficiency > 97 %
97
efficiency / %
 80 kHz switching frequency with
normally-off SiC-JFETs
copyright by
96
95
94
eta V_batt 500V
93
eta V_batt 400V
92
eta V_batt 300V
91
FSEM
Fraunhofer System
Research Electric Mobility
90
0
5
10
15
20
25
power / kW
SemiSouth Proprietary
Fupet World Records in Density
•
•
•
•
•
SiC JFET & Diode
3phase Inverter
30kWh/l
0.5l volume
99% Efficiency
•
•
Cost Savings:
Magnetics & Cooling
Best in
Class
SemiSouth Proprietary
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Application with SiC DM JFET
Jfets already helping to cut costs
1 x SJDP120R085 1200V/85mOhm
2 x Coolmos: 600V/47mOhm
600v
1200v
47mohm
47mohm
85mohm
600v
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Application with SiC DM JFET
Jfets already helping to cut costs
Example solar mpp tracker 400V12A to 650V
Saved space allows control board to be integrated on main pcb
Courtesy MSB. www.msb-elektronik.de
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Application with SiC DM JFET
Courtesy of
MSB Elektronik GmbH
Si-Mosfet
SiC DM JFET
SemiSouth Proprietary
Using Jfet as start-up cell
1
1
V
0
0
5
V
0
0
5
V
7
2
1
Drv
6
6
Drv
1
1
t
V
5
4
t
5
4
V
8
5
C
Vee
8
2
Inv
5
C
Vee
3
2
Inv
Sns
3
Sns
2
3
4
2
3
1
5
4
2
5
comp
1
Vcc
2
7
comp
1
1
Vcc
7
2
3
3
4
2
3
mosfet
800V
5
2
3
1
~2Mohm.5W
3
2
4
2
1
1
4
1
4
1
1
2
2
4
1
2
V
0
0
2
V
0
0
2
Vin
Vin
Traditional start up solutions in 3ph Aux Power Supply
Solution 1 Using hv bleeder
Solution 2 Using mosfet
+low component count
+fast start-up at low line
+Simple
+Low quiescent power loss
+robust
-Mosfet need to be protected against overload
-Slow start-up at low line
-High dissipation in fet under Short Circuit
-high quiescent power loss

SemiSouth Proprietary
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Vin
Using Jfet as start-up cell
Use depletion mode jfet
1
2
3
2
1
Vout
4
1
V
0
0
5
V
0
0
5
2
4
2
1
V
0
0
2
V
0
0
2
Eliminate start up circuit
3
D
1
4
3
mosfet
800V
5
2
1
SJDT170R1400
G
2
1700V SiC JFET
2
1
S
g
1400mOhm
Drv
6
comp
1
Vcc
7
Normally On
1
Small bleeder to lift gate
3
Sns
1
2
3
1
4
5
2
1
2
2
D2PAK 7L (SMD)
t
5
4
V
8
5
C
Vee
2
Inv
To get high enough voltage
Small 30V Mosfet for
Use depletion mode jfet to supply current for start-up
Cascode Switching
No extra components
Jfet needs no extra heat sink
Fast start-up
SemiSouth Proprietary
3phase SMPS
Jfet simplifies, improves performance reduces component count
2
1
Current passes through
4 rectifier diodes and
8 filter inductor windings
2 pfc diodes//fets
N
L
L
2 phases of 3 phase smps using single phase modules
Real 3 phase pfc using 1200 source switched jfet
3
L
2
1
L
L
Current passes through
4 filter inductor
2 pfc FETs.
Bulk cap can be eliminated if hold up not required
Single inrush
Output uses 1200V jfets, so less control overhead etc.
Can be used for bidirectional 3 phase battery charger
SemiSouth Proprietary
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2008-2011 SBD Products
Part
SDA05S120
SDB05S120
SDP10S120D
SDA10S120
SDP20S120D
SDP30S120
SDP60S120D
2L TO-220
DPAK
(TO-252)
3L TO-247
3L TO-220
3L TO-247
2L TO-247
3L TO-247
1200
1200
1200
1200
1200
1200
1200
IF (A)
5A
5A
10A
(2 x 5A)
10A
20A
(2 x 10A)
30A
60A
(2 x 30A)
VFmin (V)
VFmax (V)
1.6
1.8
1.6
1.8
1.6
1.8
1.6
1.8
1.6
1.8
1.6
1.8
1.6
1.8
Samples
2008
2011
2008
2008
2008
2009
2011
Production
2008
EQ2/2011
2008
2008
2008
2009
EQ3/2011
Package
BV (V)
Latest Datasheets at
http://semisouth.com/power-semiconductors/sic-diodes
Accepting Sample and Production orders
SemiSouth Proprietary
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2008-11 Trench JFET Products
Normally-OFF
Normally-ON
Part
SJDP120R085
SJDP120R045
SJEP120R100
SJEP120R063
SJEC120R050
SJEP170R550
3L TO-247
Package
3L TO-247
3L TO-247
3L TO-247
3L TO-247
Bare Die Only
Voltage
1200 V
1200 V
1200 V
1200 V
1200 V
Rds(on)
85 m
45 m
100 m
63 m
50 m
1700V
550 m
Ciss
Tr/Tf
Die size
670 pF
12 / 30 (ns)
4.5 mm2
1420 pF
20 / 40 (ns)
9 mm2
670 pF
12 / 30 (ns)
4.5 mm2
2 x 670 pF
15 / 35 (ns)
2 x 4.5 mm2
1420 pF
20 / 40 (ns)
9 mm2
167 pF
15 / 30 (ns)
2 mm2
Samples
2009
Q2/2011
2008
2009
2010
2009
Production
2009
Q3/2011
2008
2009
Q1/2011
2009
Latest Datasheets at
http://semisouth.com/power-semiconductors/sic-transistors
Accepting Sample and Production orders
SemiSouth Proprietary
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Summary
System cost can be reduced
 Additional values:







Higher Efficiency >99% -> Lower Losses
Lower Weight
Less Filters
Simple Cooling
Simple Driving
Reduced component count result in higher reliability
Reduced cost
 Products are available now and are mass production approved
SemiSouth Proprietary
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SMA Quote about SiC

Dr. Regine Mallwitz, SMA: SiC & GaN User Forum, Birmingham 2011
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