SiC Power Module
Data Sheet
BSM300D12P2E001
lApplication
lCircuit diagram
 Motor drive
 Inverter, Converter
1
7
 Photovoltaics, wind power generation.
9
8
 Induction heating equipment.
3,4
6
5
lFeatures
2
10
NTC
1) Low surge, low switching loss.
11
2) High-speed switching possible.
3) Reduced temperature dependence.
lConstruction
This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM.
lDimensions & Pin layout (Unit : mm)
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© 2015 ROHM Co., Ltd. All rights reserved.
1/9
2015.09 - Rev.A
Data Sheet
BSM300D12P2E001
lAbsolute maximum ratings (Tj = 25°C)
Parameter
Drain-source voltage
Conditions
Symbol
VDSS G-S short
Gate-source voltage(+)
VGSS
Gate-source voltage(-)
G - S Voltage (tsurge<300nsec) VGSS_surge
ID
Drain current *1
IDRM
IS
Source current *1
ISRM
Total power disspation *3
Max Junction Temperature
Operating junction temperature
Storage temperature
Ptot
Tjmax
Tjop
Tstg
Isolation voltage
Visol
D-S short
D-S short
DC (Tc=60°C)
Pulse (Tc=60°C) 1ms　*2
DC (Tc=60°C )
Pulse (Tc=60°C) 1ms　*2
Tc=25°C
Terminals to baseplate,
f=60Hz AC 1min.
Limit
1200
22
-6
-10 to 26
300
600
300
600
1875
175
Unit
V
A
W
-40 to150
-40 to125
°C
2500
Vrms
4.5
Main Terminals : M6 screw
N·m
Mounting to heat shink : M5 screw
3.5
(*1) Case temperature (Tc) is defined on the surface of base plate just under the chips.
(*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T j max.
(*3) Tj is less than 175°C
-
Mounting torque
Example of acceptable VGS waveform
+26V
tsurge
+22V
0V
tsurge
-6V
-10V
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© 2015 ROHM Co., Ltd. All rights reserved.
2/9
2015.09 - Rev.A
Data Sheet
BSM300D12P2E001
lElectrical characteristics (Tj=25°C)
Parameter
Conditions
Symbol
Static drain-source on-state
voltage
Tj=25°C
Tj=125°C
Tj=150°C
VDS(on) ID=300A, VGS=18V
VDS=1200V, VGS=0V
IDSS
Drain cutoff current
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
VGS=0V, IS=300A
VSD
Source-drain voltage
Min.
－
－
－
－
－
VGS=18V, IS=300A
－
－
－
1.6
－
-0.5
－
－
－
－
－
－
-
Gate-source threshold voltage VGS(th) VDS=10V, ID=68mA
VGS=22V, VDS=0V
IGSS
Gate-source leakage current
VGS= -6V, VDS=0V
td(on) VGS(on)=18V, VGS(off)=0V
tr
VDS=600V
ID=300A
trr
Switching characteristics
td(off) RG=0.2W
inductive load
tf
Input capacitance
Gate Registance
NTC Rated Resistance
NTC B Value
Stray Inductance
VDS=10V, VGS=0V,100kHz
Tj=25°C
Ciss
RGint
R25
B50/25
Ls
Creepage Distance
-
Clearance Distance
-
Terminal to heat sink
Terminal to terminal
Terminal to heat sink
Terminal to terminal
Typ.
2.2
3.0
3.4
1.6
2.2
2.4
1.4
1.6
1.7
2.7
－
－
80
70
50
250
65
35
1.6
5.0
3370
13
14.5
15.0
12.0
9.0
－
－
－
DMOS (1/2 module) *4
4
－
SBD (1/2 module) *
Case
to
heat
sink,
per
1
module,
Case-to-heat sink
Rth(c-f)
0.035
Thermal resistance
Thermal grease appied *5
(*4) Measurement of Tc is to be done at the point just beneath the chip.
(*5) Typical value is measured by using thermally conductive grease of λ=0.9W/(m・K).
Junction-to-case thermal
resistance
Rth(j-c)
Eon=Id×Vds
Max.
2.9
－
4.5
3.2
2.1
3.2
－
－
4.0
0.5
－
－
－
－
－
－
－
-
0.08
0.11
Unit
V
mA
V
V
mA
ns
nF
W
kW
K
nH
mm
mm
mm
mm
K/W
-
Eoff=Id×Vds
lWaveform for switching test
trr
Vsurge
VDS
90%
ID
2%
90%
10%
10%
2%
2%
10%
2%
90%
VGS
10%
td(on)
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td(off)
tr
3/9
tf
2015.09 - Rev.A
Data Sheet
BSM300D12P2E001
lElectrical characteristic curves (Typical)
Fig.1 Typical Output Characteristics [ Tj=25ºC ]
8
600
VGS=18V
VGS=18V
7
Drain-Source Voltage : VDS [V]
VGS=16V
500
VGS=20V
Drain Current : ID [A]
Fig.2 Drain-Source Voltage vs. Drain Current
400
VGS=14V
300
VGS=12V
200
100
VGS=10V
6
Tj=150ºC
5
4
Tj=125ºC
3
Tj=25ºC
2
1
0
0
0
2
4
6
0
8
200
Drain-Source Voltage : VDS [V]
Tj=25ºC
Drain-Source Voltage : VDS [V]
7
6
5
4
ID=400A
ID=300A
ID=200A
ID=150A
1
0
12
14
16
18
20
22
24
26
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Fig.4 Static Drain - Source On-State Resistance
vs. Junction Temperature
8
2
30
ID=300A
25
20
VGS=12V
15
10
VGS=14V
VGS=16V
VGS=18V
VGS=20V
5
0
0
50
100
150
200
250
Junction Temperature : Tj [ºC]
Gate-Source Voltage : VGS [V]
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600
Drain Current : ID [A]
Fig.3 Drain-Source Voltage vs.
Gate-Source Voltage [ Tj=25ºC ]
3
400
4/9
2015.09 - Rev.A
Data Sheet
BSM300D12P2E001
lElectrical characteristic curves (Typical)
Fig.5 Forward characteristic of Diode
Fig.6 Forward characteristic of Diode
1000
600
Tj=150ºC
Tj=125ºC
Tj=150ºC
500
Tj=150ºC
Source Current : Is [A]
Source Current : Is [A]
Tj=25ºC
Tj=125ºC
Tj=25ºC
100
VGS=0V
VGS=18V
10
Tj=125ºC
400
Tj=150ºC
Tj=125ºC
300
Tj=25ºC
200
100
Tj=25ºC
VGS=0V
VGS=18V
0
0
1
2
3
4
0
1
2
3
4
Source-Drain Voltage : VSD [V]
Source-Drain Voltage : VSD [V]
Fig.8 Drain Current vs. Gate-Source Voltage
Fig.7 Drain Current vs. Gate-Source Voltage
600
1000
VDS=20V
VDS=20V
Tj=125ºC
500
400
Drain Current : ID [A]
Drain Current : ID [A]
Tj=150ºC
Tj=125ºC
300
Tj=25ºC
200
100
Tj=150ºC
Tj=25ºC
10
100
0
1
0
5
10
15
0
10
15
Gate-Source Voltage : VGS [V]
Gate-Source Voltage : VGS [V]
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© 2015 ROHM Co., Ltd. All rights reserved.
5
5/9
2015.09 - Rev.A
Data Sheet
BSM300D12P2E001
lElectrical characteristic curves (Typical)
Fig.9 Switching Characteristics [ Tj=25ºC ]
Fig.10 Switching Characteristics [ Tj=150ºC ]
1000
1000
td(off)
Switching Time : t [ns]
Switching Time : t [ns]
td(off)
tr
100
tf
td(on)
VDS=600V
VGS(on)=18V
VGS(off)= 0V
RG=0.2W
INDUCTIVE
LOAD
100
td(on)
VDS=600V
VGS(on)=18V
VGS(off)= 0V
10
10
0
200
400
tr
tf
0
600
200
Drain Current : ID [A]
400
600
Drain Current : ID [A]
Fig.11 Switching Loss vs. Drain Current
[ Tj=25ºC ]
Fig.12 Switching Loss vs. Drain Current
[ Tj=150ºC ]
25
25
Eoff
VDS=600V
VGS(on)=18V
VGS(off)=0V
RG=0.2W
INDUCTIVE
LOAD
15
VDS=600V
VGS(on)=18V
VGS(off)=0V
RG=0.2W
INDUCTIVE
LOAD
20
Switching Loss [mJ]
20
Switching Loss [mJ]
RG=0.2W
INDUCTIVE
LOAD
Eon
10
5
15
Eoff
Eon
10
5
Err
Err
0
0
0
200
400
0
600
Drain Current : ID [A]
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200
400
600
Drain Current : ID [A]
6/9
2015.09 - Rev.A
Data Sheet
BSM300D12P2E001
lElectrical characteristic curves (Typical)
Fig.14 Recovery Characteristics vs.
Drain Current [ Tj=150ºC ]
1000
Irr
100
0.1
trr
VDS=600V
VGS(on)=18V
VGS(off)=0V
RG=0.2W
INDUCTIVE
LOAD
10
0.01
1
Recovery Time : trr [ns]
1
Recovery Current : Irr [A]
Recovery Time : trr [ns]
1000
200
400
Irr
100
0.1
trr
VDS=600V
VGS(on)=18V
VGS(off)=0V
RG=0.2W
INDUCTIVE
LOAD
10
0.001
0
600
Drain Current : ID [A]
200
400
600
Drain Current : ID [A]
Fig.16 Switching Characteristics vs. Gate
Resistance [ Tj=150ºC ]
Fig.15 Switching Characteristics vs. Gate
Resistance [ Tj=25ºC ]
10000
10000
VDS=600V
ID=300A
VGS(on)=18V
VGS(off)=0V
INDUCTIVE
LOAD
1000
VDS=600V
ID=300A
VGS(on)=18V
VGS(off)=0V
INDUCTIVE
LOAD
td(off)
tf
Switching Time : t [ns]
Recovery Current : Irr [A]
0.01
1
0.001
0
1
Switching Time : t [ns]
Fig.13 Recovery Characteristics vs.
Drain Current [ Tj=25ºC ]
tr
td(on)
100
10
1000
td(off)
tf
tr
td(on)
100
10
0.1
1
10
100
0.1
Gate Resistance : RG [W]
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1
10
100
Gate Resistance : RG [W]
7/9
2015.09 - Rev.A
Data Sheet
BSM300D12P2E001
lElectrical characteristic curves (Typical)
Fig.18 Switching Loss vs. Gate Resistance
[ Tj=150ºC ]
Fig.17 Switching Loss vs. Gate Resistance
[ Tj=25ºC ]
60
60
VDS=600V
ID=300A
VGS(on)=18V
VGS(off)=0V
INDUCTIVE
LOAD
40
VDS=600V
ID=300A
VGS(on)=18V
VGS(off)=0V
INDUCTIVE
LOAD
50
Eoff
Switching Loss [mJ]
Switching Loss [mJ]
50
Eon
30
20
10
40
30
Eoff
20
Eon
10
Err
0
0.1
1
Err
0
10
100
0.1
Fig.19 Typical Capacitance vs. Drain-Source
Voltage
100
Fig.20 Gate Charge Characteristics
[ Tj=25ºC ]
1.E-07
1.E-08
Coss
1.E-09
Tj=25ºC
VGS=0V
Crss
Gate-Source Voltage : VGS [V]
25
Ciss
Capasitance : C [F]
10
Gate Resistance : RG [W]
Gate Resistance : RG [W]
1.E-10
0.01
1
20
15
10
5
ID=300A
Tj=25ºC
0
0.1
1
10
100
1000
0
Drain-Source Voltage : VDS [V]
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© 2015 ROHM Co., Ltd. All rights reserved.
500
1000
1500
2000
Total Gate charge : Qg [nC]
8/9
2015.09 - Rev.A
Data Sheet
BSM300D12P2E001
lElectrical characteristic curves (Typical)
Normalized Transient Thermal Impedance : Rth
Fig.21 Normalized Transient Thermal
Impedance
1
0.1
Single Pulse
TC=25ºC
Per unit base
DMOS part : 0.08K/W
SBD part : 0.11K/W
0.01
0.001
0.01
0.1
1
10
Time [s]
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© 2015 ROHM Co., Ltd. All rights reserved.
9/9
2015.09 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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R1102B