PA3-110




InP Power Amplifier
W-Band operation
75-110 GHz
Medium Power Amplifier
The PA3-110 is a 3 stage MMIC amplifier die fabricated using HRL’s H2 InP HEMT
process that is AS9100B certified. The amplifier has drain connections for each stage
and independent gate biases for each stage. The third stage has a single gate
connection and 2 drain connections that control the 2 devices for the output stage.
Electrical Specifications, TA=25oC, Vd=2.0 V, Id=120 mA, 50  Input and Output
Specification
Frequency
Gain
Input Return Loss
Output Return Loss
Saturated Output Power
Units
Min
GHz
dB
dB
dB
dBm
75
10
Typical Gain & Return Loss
Typ
Max
105
13
-3
-7
13
-3
-5
Typical Gain & Output Power
25
20
20
Gain (dB), Output Power (dBm)
Gain , Return Loss (dB)
S21
15
10
5
0
S11
-5
S22
15
10
5
94 GHz Pout
94 GHz Gain
75 GHz Pout
0
75 GHz Gain
-10
110 GHz Pout
75
80
85
90
95
100
105
110
110 GHz Gain
-5
-30
Frequency (GHz)
-25
-20
-15
-10
-5
Input Power (dBm)
Disclosure Information: This document is for information only. HRL Laboratories reserves the right to change without notice the
characteristic data and other specifications as they apply to the product(s). The product(s) represented by this document is subject to U.S.
Export Law as contained in ITAR or the EAR regulations. HRL Laboratories makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose, nor does HRL Laboratories assume any liability whatsoever arising out of the use or
application of any product(s) or information.
3/18/2011
___________________________________________________________________________________________________________________________________________________________________________
©2011 HRL Laboratories, LLC
http://mmics.hrl.com mmics@hrl.com
1
(310) 317-5981
0
Table I Maximum Ratings
Symbol
Parameter
Value
PIN
Input Power
10 dBm
VDS
Drain to Source Voltage
2.0 V
VGD
Gate to Drain Voltage
-2.5 to 0.0 VDC
VGS
Gate to Source Voltage
-1.0 to 0.0 VDC
TM
Die Attach Temperature (30 seconds)
290o C
Note
Outline Drawing
Bond pads are nominally 0.1 mm square
Bond pad locations shown from die edge to pad center
Die thickness is nominally 50 um
Solid models and CAD files available at
http://mmics.hrl.com
Disclosure Information: This document is for information only. HRL Laboratories reserves the right to change without notice the
characteristic data and other specifications as they apply to the product(s). The product(s) represented by this document is subject to U.S.
Export Law as contained in ITAR or the EAR regulations. HRL Laboratories makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose, nor does HRL Laboratories assume any liability whatsoever arising out of the use or
application of any product(s) or information.
3/18/2011
___________________________________________________________________________________________________________________________________________________________________________
©2011 HRL Laboratories, LLC
http://mmics.hrl.com mmics@hrl.com
2
(310) 317-5981
DC Schematic
GND
VG1
GND
VG2
GND
VG3
VD3 GND
1
2
1
RF
Input
GND
RF
Output
2
1
1
2
VD1
GND
2
GND
VD2
GND
VD3
Typical Assembly Drawing
Disclosure Information: This document is for information only. HRL Laboratories reserves the right to change without notice the
characteristic data and other specifications as they apply to the product(s). The product(s) represented by this document is subject to U.S.
Export Law as contained in ITAR or the EAR regulations. HRL Laboratories makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose, nor does HRL Laboratories assume any liability whatsoever arising out of the use or
application of any product(s) or information.
3/18/2011
___________________________________________________________________________________________________________________________________________________________________________
©2011 HRL Laboratories, LLC
http://mmics.hrl.com mmics@hrl.com
3
(310) 317-5981