RH07
Operational Amplifier
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DESCRIPTIO
ABSOLUTE
The RH07 is a precision op amp which provides very low
offset voltage, low drift and low noise. In the design,
processing and testing of the device, particular attention
has been paid to the optimization of the entire distribution
of several key parameters. The wafer lots are processed to
LTC’s in-house Class S flow to yield circuits usable in
stringent military applications.
Supply Voltage ..................................................... ±22V
Differential Input Voltage ...................................... ±30V
Input Voltage ........................................................ ±22V
Output Short-Circuit Duration (Note 3) ........... Indefinite
Operating Temperature Range ............. – 55°C to 125°C
Storage Temperature Range ................ – 65°C to 150°C
Lead Temperature (Soldering, 10 sec)................. 300°C
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RATI GS
For complete electrical specifications, performance curves,
application notes and applications circuits, see the OP-07
data sheet.
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PACKAGE/I FOR ATIO
BUR -I CIRCUIT
TOP VIEW
VOS TRIM
10k
8
VOS TRIM 1
2
–IN 2
7
–
6
200Ω
3
10k
5 NC
+IN 3
4
V–
1
4
–20V
6 OUT
+
8
+
7 V+
–
20V
30pF
H PACKAGE
8-LEAD TO-5 METAL CAN
RH07 BI
TOP VIEW
VOS TRIM 1
–IN 2
–
+IN 3
+
V– 4
8
VOS TRIM
7
V+
6
OUT
5
NC
J8 PACKAGE
8-LEAD CERAMIC DIP
Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However,
no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the
interconnection of circuits as described herein will not infringe on existing patent rights.
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RH07
TABLE 1: ELECTRICAL CHARACTERISTICS (Pre-Irradiation) (Note 5)
SYMBOL PARAMETER
VOS
∆VOS
∆Temp
∆VOS
∆Time
IOS
∆IOS
∆Temp
CONDITIONS
NOTES
Input Offset Voltage
1
Avg Input Offset Voltage Drift:
Without External Trim
With External Trim
Null Pot = 20kΩ
3
3
Long-Term Input Offset
Voltage Stability
MIN
TA = 25°C
TYP MAX
75
4
200
2,3
2.8
1
5.6
3
2,3
50
±3
µV
µV/Mo
1
Input Offset Current
UNITS
µV/°C
µV/°C
1.3
1.3
2,3
Avg Input Bias Current Drift
SUB- –55°C ≤ TA ≤ 125°C SUBGROUP MIN TYP MAX
GROUP
±6
pA/°C
IB
Input Bias Current
∆IB
∆Temp
Avg Input Bias Current Drift
en
Input Noise Voltage
0.1Hz to 10Hz
3
0.6
µVP-P
Input Noise Voltage Density
fO = 10Hz
fO = 100Hz
fO = 1000Hz
4
3
3
18
13
11
nV/√Hz
nV/√Hz
nV/√Hz
Input Noise Current
0.1Hz to 10Hz
3
30
pAP-P
Input Noise Current Density
fO = 10Hz
fO = 100Hz
fO = 1000Hz
3
3
3
0.80
0.23
0.17
in
RIN
3
Input Resistance:
Differential Mode
Common Mode
3
Input Voltage Range
3
VCM = ±13V
Common-Mode
Rejection Ratio
PSRR
Power Supply Rejection Ratio VS = ±3V to ±18V
AVOL
Large-Signal Voltage Gain
50
RL ≥ 2k, VO = ±10V
RL ≥ 500Ω, VO = ±0.5V
VS = ±3V
3
nA
pA/°C
pA/√Hz
pA/√Hz
pA/√Hz
20
MΩ
GΩ
±13.5
±13.5
V
110
1
106
2,3
dB
100
1
94
2,3
dB
200
150
4
150
5,6
V/mV
V/mV
Maximum Output
Voltage Swing
RL ≥ 10k
RL ≥ 2k
RL ≥ 1k
SR
Slew Rate
RL ≥ 2k
3
0.1
GBW
Closed-Loop Bandwidth
AVCL = 1
3
0.4
PD
Power Dissipation
VS = ±15V
VS = ±3V
2
2,3
200
CMRR
VOUT
1
nA
±12.5
±12.0
±10.5
4
4
4
±12.0
5,6
V/µs
MHz
120
6
1
1
mW
mW
RH07
TABLE 1A: ELECTRICAL CHARACTERISTICS
10KRAD(Si)
SYMBOL PARAMETER
CONDITIONS
(Post-Irradiation) (Note 6)
20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si)
NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
UNITS
VOS
Input Offset Voltage
90
150
200
250
300
µV
IOS
Input Offset Current
2.8
4
8
12
20
nA
IB
Input Bias Current
±3
±10
±25
±50
±100
nA
±13.5
±13.5
±13.5
±13.5
±13.5
V
CMRR
Common-Mode
Rejection Ratio
VCM = ±13V
110
110
105
100
95
dB
PSRR
Power Supply
Rejection Ratio
VS = ±3V to ±18V
100
100
100
95
90
dB
AVOL
Large-Signal Voltage Gain RL ≥ 2k, VO = ±10V
200
200
180
150
120
V/mV
VOUT
Maximum Output
Voltage Swing
RL ≥ 10k
±12.5
±12.5
±12.5
±12.5
±12.5
V
SR
Slew Rate
RL ≥ 2k
0.1
0.1
0.1
0.075
0.05
V/µs
PD
Power Dissipation
120
120
120
120
120
mW
1
Input Voltage Range
3
Note 1: Offset voltage is measured with high speed test equipment
approximately 0.5 seconds after power is applied.
Note 2: Long-term input offset voltage stability refers to the averaged
trend line of VOS vs. time over extended periods after the first 30 days of
operation. Excluding the initial hour of operation, changes in VOS during
the first 30 days are typically 2.5µV.
Note 3: Parameter is guaranteed by design, characterization, or correlation
to other tested parameters.
Note 4: 10Hz noise voltage density is sample tested on every lot to an
LTPD of 15. Devices 100% tested at 10Hz are available on request.
Note 5: VS = ±15V, VCM = 0V, unless otherwise noted.
Note 6: TA = 25°C, VS = ±15V, VCM = 0V, unless otherwise noted.
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TABLE 2: ELECTRICAL TEST REQUIRE E TS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUP
Final Electrical Test Requirements (Method 5004)
1*,2,3,4,5,6
Group A Test Requirements (Method 5005)
1,2,3,4,5,6
Group B and D for Class S, and
Group C and D for Class B
End Point Electrical Parameters (Method 5005)
PDA Test Notes
The PDA is specified as 5% based on failures from group A, subgroup 1,
tests after cooldown as the final electrical test in accordance with method
5004 of MIL-STD-883 Class B. The verified failures of group A, subgroup
1, after burn-in divided by the total number of devices submitted for burnin in that lot shall be used to determine the percent for the lot.
Linear Technology Corporation reserves the right to test to tighter limits
than those given.
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* PDA Applies to subgroup 1. See PDA Test Notes.
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TOTAL DOSE BIAS CURRE T
10k
15V
–
10k
8V
+
–15V
RH07 F01
3
RH07
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TYPICAL PERFOR A CE CHARACTERISTICS
Negative Slew Rate
Positive Slew Rate
0.4
150
VS = ±15V
RL = 2k
VS = ±15V
RL = 2k
0.3
0.2
0.1
VS = ±15V
VCM = 0V
100
INPUT OFFSET VOLTAGE (µV)
NEGATIVE SLEW RATE (V/µs)
POSITIVE SLEW RATE (V/µs)
Input Offset Voltage
0.4
0.3
0.2
50
0
–50
–100
0.1
–150
0
1
10
100
TOTAL DOSE KRAD (Si)
0
1000
–200
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH07 G01
Open-Loop Gain
Common-Mode Rejection Ratio
Input Bias Current
170
VS = ±15V
VCM = 0V
INPUT BIAS CURRENT (nA)
60
130
120
110
100
COMMON-MODE REJECTION RATIO (dB)
VS = ±15V
RL = 2k
VOUT = ±10V
50
40
30
20
10
90
0
80
1
10
100
TOTAL DOSE KRAD (Si)
1000
VS = ±15V
VCM = ±13V
160
150
140
130
120
110
100
1
10
100
TOTAL DOSE KRAD (Si)
1000
1
10
100
TOTAL DOSE KRAD (Si)
RH07 G05
RH07 G04
Input Offset Current
1000
RH07 G06
Power Supply Rejection Ratio
140
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POWER SUPPLY REJECTION RATIO (dB)
VS = ±15V
VCM = 0V
INPUT OFFSET CURRENT (nA)
1000
RH07 G03
70
140
10
100
TOTAL DOSE KRAD (Si)
RH07 G02
150
VOLTAGE GAIN (dB)
1
4
2
0
–2
VS = ±3V TO ±18V
130
120
110
100
90
80
70
–4
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH07 G07
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH07 G08
I.D. No. 66-10-0170
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Linear Technology Corporation
LT/LT 0803 REV B • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7487
(408) 432-1900 ● FAX: (408) 434-0507 ● TELEX: 499-3977
 LINEAR TECHNOLOGY CORPORATION 1993