RH27C
Precision Operational Amplifier
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DESCRIPTIO
ABSOLUTE
The RH27C combines very low noise with excellent precision and high speed specifications. The low 1/f noise
corner frequency of 2.7Hz combined with 3.5nV√Hz 10Hz
noise and low offset voltage make the RH27C an excellent
choice for low frequency military instrumentation applications. The wafer lots are processed to LTC’s in-house
Class S flow to yield circuits usable in stringent military
applications.
Supply Voltage ..................................................... ±22V
Internal Power Dissipation ................................ 500mW
Input Voltage ........................... Equal to Supply Voltage
Output Short-Circuit Duration ......................... Indefinite
Differential Input Current (Note 8) ..................... ±25mA
Operating Temperature Range ............. – 55°C to 125°C
Junction Temperature Range ............... – 55°C to 150°C
Storage Temperature Range ................ – 65°C to 150°C
Lead Temperature (Soldering, 10 sec)................. 300°C
, LTC and LT are registered trademarks of Linear Technology Corporation.
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BUR -I CIRCUIT
RATI GS
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For complete electrical specifications and performance
curves see the OP-27/OP-37 data sheet.
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PACKAGE/ORDER I FOR ATIO
TOP VIEW
VOS TRIM
10k
20V
–
7
6
3
+
–20V
3
+IN
8
5
3
OUT
+IN 3
NC
V
–
– (CASE)
+
4
8
VOS TRIM
7
V+
6
OUT
5
NC
J8 PACKAGE
8-LEAD CERDIP
H PACKAGE
8-LEAD TO-5 METAL CAN
4
–
4
V
+
VOS TRIM 1
–IN 2
6
+
7
OR
4
10k
–
V+
–
–IN 2
2
200Ω
7
VOS TRIM 1
20V
2
TOP VIEW
8
TOP VIEW
–20V
NC 1
10 NC
VOS TRIM 2
–
9
VOS TRIM
–IN 3
+
8
V+
+IN 4
7
OUT
V– 5
6
NC
W PACKAGE
10-LEAD CERPAC
TABLE 1: ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
CONDITIONS
NOTES
MIN
(Preirradiation) (Note 9)
TA = 25°C
TYP MAX
100
SUBGROUP
4
– 55°C ≤ TA ≤ 125°C
MIN TYP MAX
300
SUBGROUP
2, 3
UNITS
µV
VOS
Input Offset Voltage
1
∆VOS
∆Temp
Average Offset Drift
4, 7
∆VOS
∆Time
Long-Term Input Offset
Voltage Stability
2, 4
IOS
Input Offset Current
75
1
135
2, 3
nA
IB
Input Bias Current
±80
1
±150
2, 3
nA
µV/°C
1.8
µV/Month
2
1
RH27C
TABLE 1: ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
en
in
MIN
TA = 25°C
TYP MAX
AVOL
SUBGROUP
NOTES
Input Noise Voltage
0.1Hz to 10Hz
4, 5
0.25
µVP-P
Input Noise Voltage Density
fO = 10Hz
fO = 30Hz
fO = 1000Hz
3
4
4
8.0
5.6
4.5
nV/√Hz
nV/√Hz
nV/√Hz
Input Noise Current Density
fO = 1000Hz
4, 6
0.6
pV/√Hz
4
VCM = ±11V
VCM = ±10V
100
Power Supply
Rejection Ratio
VS = ±4V to ±18V
VS = ±4.5V to ±18V
94
Large-Signal Voltage Gain
RL ≥ 2k, VO = ±10V
RL ≥ 600Ω, VO = ±1V
VS = ±4V
VOUT
Maximum Output
Voltage Swing
SR
Slew Rate
RL = 2k
GBW
Gain-Bandwidth Product
fO = 100kHz
ZO
Open-Loop Output Resistance VO = 0, IO = 0
PD
Power Dissipation
4
RL = 2k
RL = 600Ω
4
GΩ
±11
Common Mode
Rejection Ratio
V
94
2, 3
dB
dB
86
2, 3
dB
dB
1
700
200
4
300
5, 6
V/mV
V/mV
±11.5
±10.0
4
4
±10.5
5, 6
V
V
1.7
7
V/µs
5
MHz
Ω
70
170
CONDITIONS
±10.2
1
TABLE 1A: ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
UNITS
2
Input Voltage Range
PSRR
– 55°C ≤ TA ≤ 125°C
MIN TYP MAX
SUBGROUP
CONDITIONS
Input Resistance
Common Mode
CMRR
(Preirradiation) (Note 9)
NOTES
1
mW
(Postirradiation) (Note 10)
10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si)
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS
Input Offset Voltage
100
130
180
280
400
µV
IOS
Input Offset Current
75
75
90
120
180
nA
IB
Input Bias Current
±80
±80
±125
±200
±400
nA
1
Input Resistance
Common Mode
2 (Typ)
2 (Typ)
2 (Typ)
2 (Typ)
2 (Typ)
GΩ
±11
±11
±11
±11
±11
V
CMRR
Common Mode
Rejection Ratio
VCM = ±11V
100
100
97
94
90
dB
PSRR
Power Supply
Rejection Ratio
VS = ±4V to ±18V
94
94
92
90
86
dB
AVOL
Large-Signal Voltage Gain
RL ≥ 2k, VO = ±10V
V/mV
VOUT
Maximum Output
Voltage Swing
RL ≥ 10k
RL ≥ 600Ω
ZO
Open-Loop Output Resistance VO = 0, IO = 0
PD
Power Dissipation
Input Voltage Range
2
4
700
700
700
700
400
±11.5
±10.0
±11.5
±10.0
±11.5
±10.0
±11.5
±10.0
±11.5
±10.0
V
V
70 (Typ)
70 (Typ)
70 (Typ)
70 (Typ)
70 (Typ)
Ω
170
170
170
170
170
mW
RH27C
TABLE 1A: ELECTRICAL CHARACTERISTICS
Note 1: Input offset voltage measurements are performed by automatic
test equipment approximately 0.5 seconds after application of power.
Note 2: Long-term input offset voltage stability refers to the averaged
trend line of offset voltage vs time over extended periods after the first 30
days of operation. Excluding the initial hour of operation, changes in VOS
during the first 30 days are typically 2.5µV. Refer to the typical
performance curve.
Note 3: Sample tested to an LTPD of 15 on every lot. Contact factory for
100% testing of 10Hz voltage density noise.
Note 4: Parameter is guaranteed by design, characterization, or correlation
to other tested parameters.
Note 5: See test circuit and frequency response curve for 0.1Hz to 10Hz
tester on OP-27/OP-37 data sheet.
Note 6: See test circuit for current noise measurement on OP-27/OP-37
data sheet.
Note 7: The average input offset drift performance is within the specifications unnulled or when nulled with a pot having a range 8kΩ to 20kΩ.
Note 8: The RH27C’s inputs are protected by back-to-back diodes. Current
limiting resistors are not used in order to achieve low noise. If differential
input voltage exceeds ±0.7V, the input current should be limited to 25mA.
Note 9: VS = ±15V, VCM = 0V unless otherwise noted.
Note 10: TA = 25°C, VS = ±15V, VCM = 0V, unless otherwise noted.
TOTAL DOSE BIAS CIRCUIT
10k
15V
–1µF
–
10k
8V
+
–15V
–1µF
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TYPICAL PERFOR A CE CHARACTERISTICS
Negative Slew Rate
Positive Slew Rate
4
4
VS = 15V
RL = 2k
NEGATIVE SLEW RATE (V/µs)
POSITIVE SLEW RATE (V/µs)
VS = 15V
RL = 2k
3
2
1
0
3
2
1
0
1
10
100
TOTAL DOSE KRAD (Si)
1000
1
10
100
TOTAL DOSE KRAD (Si)
RH27C • TPC01
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
1000
RH27C • TPC02
3
RH27C
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TYPICAL PERFOR A CE CHARACTERISTICS
Input Offset Voltage
VS = ±15V
VCM = 0V
50
0
–50
–100
350
VS = ±15V
RL = 2k
VOUT = ±10V
160
OPEN-LOOP GAIN (dB)
INPUT OFFSET VOLTAGE (µV)
100
Input Bias Current
Open-Loop Gain
170
150
140
130
120
1
10
10
INPUT OFFSET CURRENT (nA)
COMMON MODE REJECTION RATIO (dB)
150
140
130
120
100
Power Supply Rejection Ratio
VS = ±15V
VCM = 0V
50
25
0
–25
–50
1000
100
TOTAL DOSE KRAD (Si)
100
10
TOTAL DOSE KRAD (Si)
1
RH27C • TPC06
1000
140
110
10
10
100
TOTAL DOSE KRAD (Si)
RH27C • TPC05
Input Offset Current
75
VS = ±15V
VCM = ±11V
1
1
POWER SUPPLY REJECTION RATIO (dB)
Common Mode Rejection Ratio
160
100
RH27C • TPC04
RH27C • TPC03
170
150
1000
100
TOTAL DOSE KRAD (Si)
1
1000
100
TOTAL DOSE KRAD (Si)
200
0
100
–200
250
50
110
–150
VS = ±15V
VCM = 0V
300
INPUT BIAS CURRENT (nA)
150
1000
RH27C • TPC07
VS = ±4V TO ±18V
130
120
110
100
90
80
70
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH27C • TPC08
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TABLE 2: ELECTRICAL TEST REQUIRE E TS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUP
Final Electrical Test Requirements (Method 5004)
1*,2,3,4,5,6,7
Group A Test Requirements (Method 5005)
1,2,3,4,5,6,7
Group B and D for Class S, and
Group C and D for Class B
End Point Electrical Parameters (Method 5005)
1
* PDA applies to subgroup 1. See PDA Test Notes.
PDA Test Notes
The PDA is specified as 5% based on failures from group A, subgroup 1,
tests after cooldown as the final electrical test in accordance with method
5004 of MIL-STD-883 Class B. The verified failures of group A, subgroup
1, after burn-in divided by the total number of devices submitted for burnin in that lot shall be used to determine the percent for the lot.
Linear Technology Corporation reserves the right to test to tighter limits
than those given.
I.D. No. 66-10-0155 Rev. C 0398
4
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900
FAX: (408) 434-0507● TELEX: 499-3977 ● www.linear-tech.com
rh27cc LT/HP 0398 100 REV C • PRINTED IN USA
●
 LINEAR TECHNOLOGY CORPORATION 1993