SD2943 HF/VHF/UHF RF power N-channel MOSFETs Features ■ High power capability ■ POUT = 350 W min. with 22dB gain @ 30 MHz ■ PSAT = 450 W ■ Low RDS(on) ■ Thermally enhanced packaging for lower junction temperatures ■ Gold metallization ■ Excellent thermal stability ■ Common source configuration M177 Epoxy sealed Figure 1. Pin connection Description 4 The SD2943 is a gold metallized N-channel MOS field-effect RF power transistor. It is intended for use in 50 V dc large signal applications up to 150 MHz. The SD2943 offers a 20% higher power saturation than the SD2933, and is ideal for ISM applications where reliability and ruggedness are critical factors. 1 5 3 2 1. Drain 4. Source 2. Source 5. Source 3. Gate Table 1. Device summary Order code Marking Base qty. Package Packaging(1) SD2943W SD2943(1) 25 pcs M177 Plastic tray 1. For more details please refer to Chapter 7: Marking, packing and shipping specifications.. August 2011 Doc ID 11584 Rev 3 1/15 www.st.com 15 Contents SD2943 Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Test Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 7 Marking, packing and shipping specifications . . . . . . . . . . . . . . . . . . . 13 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 Doc ID 11584 Rev 3 SD2943 1 Electrical data Electrical data (TCASE = 25° C) Table 2. Absolute maximum rating Symbol Value Unit Drain source voltage 130 V Drain-gate voltage (RGS = 1MW) 130 V Gate-source voltage ±20 V Drain current 40 A Power dissipation 648 W Max. operating junction temperature 200 °C EAS Avalanche energy, single pulse (ID = 53A, 800µH coil) 1100 mJ TSTG Storage temperature -65 to +150 °C V(BR)DSS(1) VDGR VGS ID PDISS Tj Parameter 1. TJ = 150 °C Table 3. Symbol RthJC Thermal data Parameter Junction to case thermal resistance Doc ID 11584 Rev 3 Value Unit 0.27 ° C/W 3/15 Electrical characteristics 2 SD2943 Electrical characteristics (TCASE = 25°C) Table 4. Static Symbol Test conditions Min. Typ. Max. Unit V(BR)DSS(1) VGS = 0 V IDS = 200 mA IDSS VGS = 0 V VDS = 50 V 200 µA IGSS VGS = 20 V VDS = 0 V 500 nA VGS(Q) VDS = 10 V ID = 250 mA 4 V VDS(ON) VGS = 10 V ID = 20 A 2 V GFS(2) VDS = 10 V ID = 10 A CISS VGS = 0 V VDS = 50 V f = 1 MHz 830 pF COSS VGS = 0 V VDS = 50 V f = 1 MHz 470 pF CRSS VGS = 0 V VDS = 50 V f = 1 MHz 35 pF 130 V 2 10 mho 1. TJ = 150° C 2. GFS sorts for each unit see Table . Table 5. Dynamic Symbol Test conditions POUT VDD = 50 V IDQ = 250 mA GPS VDD = 50 V IDQ = 250 mA POUT = 350 W hD VDD = 50 V IDQ = 250 mA POUT = 350 W Load Mismatch Table 6. 4/15 f = 30 MHz VDD = 50 V IDQ = 250 mA POUT = 350 W All Phase Angles f = 30 MHz f = 30 MHz f = 30 MHz GFS sorts Symbol Value A 10 ÷ 10.99 B 11 ÷ 11.99 C 12 ÷ 12.99 D 13 ÷ 13.99 E 14 ÷ 14.99 F 15 ÷ 15.99 G 16 ÷ 16.99 H 17 ÷ 18 Doc ID 11584 Rev 3 Min. Typ. 350 450 W 22 25 dB 60 65 % 3:1 Max. Unit VSWR SD2943 Impedance 3 Impedance Figure 2. Impedance Data Schematic D ZDL Typical Drain Load Impedance Typical Input Impedance G ZIN S Table 7. Impedance data f ZIN (Ω) ZDL (Ω) 30 MHz 1.3 - j 2.9 3.1 + j 2.3 108 MHz 1.4 - j 2.4 1.9 + j 1.4 175 MHz 1.4 - j 2.2 1.7 +j 1.6 Doc ID 11584 Rev 3 5/15 Typical performance SD2943 4 Typical performance Figure 3. Capacitance vs drain voltage Figure 4. Drain current vs gate voltage 40 10000 Vds = 10 V 35 CISS 30 Capacitance (pF) 1000 25 Id (A) COSS 100 20 15 CRSS Tc = +20 ºC 10 10 5 Tc = +80 ºC Freq = 1 MHz 0 1 0 4 8 12 16 20 24 28 32 Vdd (V) 36 40 44 48 52 0 56 1 2 3 4 5 6 Vgs (V) Gate-source voltage vs case temperature Figure 6. Maximum thermal resistance vs. case temperature 0.33 1.15 1.1 0.32 Id= 12 A Id= 10 A 1.05 Id= 7 A Id= 5 A Id= 15 A 1 0.95 Id=.1 A Id= 4 A 0.9 Id= 2 A 0.85 Id=.25 A 0.29 0.28 0.26 0.8 25 0.3 0.27 Id= 1 A 0 0.31 Id= 3 A Vdd= 10 V -25 RTH(j-c) (°C/W) Vgs, GATE-SOURCE VOLTAGE (NORMALIZED) Figure 5. 50 75 100 25 30 35 40 45 50 55 60 65 70 Tc, CASE TEMPERATURE (°C) Tc, CASE TEMPERATURE (ºC) 6/15 Tc = -20 ºC Doc ID 11584 Rev 3 75 80 85 SD2943 Typical performance Figure 7. Output power vs input power Figure 8. 500 500 450 450 Output power vs input power (at different temperature) Tc = +25 ºC 400 Tc = +80 ºC 400 Vdd = 50 V 350 350 Pout (W) 300 Pout (W) Tc = -20 ºC Vdd = 40 V 250 300 250 200 200 150 150 100 100 Freq = 30 MHz Idq = 250 mA 50 Freq = 30 MHz Vdd = 50 V Idq = 250 mA 50 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 Pin (W) Figure 9. 2.5 3.0 3.5 4.0 4.5 Pin (W) Power gain vs output power Figure 10. Efficiency vs output power 80 30 28 Tc = +25 ºC 70 Tc = +25 ºC 26 60 50 Tc = -20 ºC Nd (%) Gain (dB) 24 Tc = +80 ºC 22 20 40 30 18 20 Freq = 30 MHz Vdd = 50 V Idq = 250 mA 16 Freq = 30 MHz Vdd = 50 V Idq = 250 mA 10 14 0 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 Pout (W) 250 300 350 400 450 500 Pout (W) Figure 11. Output power vs supply voltage Figure 12. Output power vs gate voltage 440 440 Freq = 30 MHz Idq = 250mA 400 Tc = -20 ºC Pin = 2.2 W 400 Tc = +25 ºC 360 360 320 280 Pout (W) Pout (W) 320 280 Pin = 1.1 W 240 240 Tc = +80 ºC 200 160 200 120 Pin = 0.55 W 160 Freq = 30 MHz Pin = 1.1 W Vdd = 50 V Idq = 250 mA 80 120 40 80 0 26 28 30 32 34 36 38 40 42 44 46 48 50 52 -3 -2.5 -2 -1.5 Vdd (V) -1 -0.5 0 0.5 1 1.5 2 2.5 3 3.5 Vgs (V) Doc ID 11584 Rev 3 7/15 Test Circuit 5 SD2943 Test Circuit Figure 13. 30 MHz test circuit schematic Note: 1 Dimension at component symbol are reference for component placement. 2 Gap between group and trasmission files are 0.056[1.42] typ. 3 Transmission lime are not 1:1 scale. 4 Input and output trasmission line are 50Ω Table 8. 30 MHz test circuit component part list Symbol Description C1,C9 0.01 µF / 500 V surface mount ceramic chip capacitor C2, C3 750 pF ATC 700B surface mount ceramic chip capacitor C4 300 pF ATC 700B surface mount ceramic chip capacitor C5,C10,C11,C14,C16 10000 pF ATC 200B surface mount ceramic chip capacitor 8/15 C6 510 pF ATC 700B surface mount ceramic chip capacitor C7 300 pF ATC 700B surface mount ceramic chip capacitor C8 175-680 pF TYPE 46 standard trimmer capacitor C12 47 µF / 63 V aluminum electrolytic radial lead capacitor Doc ID 11584 Rev 3 SD2943 Test Circuit Table 8. 30 MHz test circuit component part list (continued) Symbol Description C13 1200 pF ATC 700B surface mount ceramic chip capacitor C15 100 µF / 63 V aluminum electrolytic radial lead capacitor R1,R3 1 KΩ 1 W surface mount chip resistor R2 560Ω 2 W wire-wound axils lead resistor T1 HF 2-30 MHz surface mount 9:1 transformer T2 RG - 142B/U 50Ω coaxial cable OD = 0.165[4.18] L 15”[381.00] covered with 15”[381.00] tinned copper tubular brand 13/65” [5.1] width L1 1 3/4 turn air-wound 16 AWG ID = 0.219 [5.56] poly-coated magnet wire L2 1 3/4 turn air-wound 12 AWG ID = 0.250 [6.34] bus bar wire RFC1,RFC2 3 turns 14 AWG wire through fair rite toroid FB1 surface mount emi shield bead FB2 toroid PCB ULTRALAM 2000. 0.030” THK, ε r = 2.55, 2 Oz ED CU both sides 4 inches Figure 14. 30 MHz test circuit photomaster 6.4 inches Doc ID 11584 Rev 3 9/15 Test Circuit SD2943 Figure 15. 30 MHz test circuit 10/15 Doc ID 11584 Rev 3 SD2943 6 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. M177 (.550 DIA 4/L N/HERM W/FLG) mm. inch DIM. Min. Max. Min. A 5.72 5.97 0.225 0.235 B 6.73 6.96 0.265 0.275 C 21.84 22.10 0.860 0.870 D 28.70 28.96 1.130 1.140 E 13.84 Typ 14.10 0.545 0.555 F 0.08 - 0.18 0.003 G 2.49 2.74 0.098 0.108 H 3.81 4.32 0.150 0.170 I 7.11 Typ - Max. 0.007 0.280 J 27.43 28.45 1.080 1.120 K 15.88 16.13 0.625 0.635 Doc ID 11584 Rev 3 11/15 Package mechanical data SD2943 Figure 16. M177 package dimensions 12/15 Doc ID 11584 Rev 3 SD2943 7 Marking, packing and shipping specifications Marking, packing and shipping specifications Table 10. Packing and shipping specifications Order code Packaging Pcs per tray Dry pack humidity GFS code Lot code SD2943W Plastic tray 25 < 10 % Not mixed Not mixed Figure 17. Marking layout SD2943 Table 11. Marking specifications Symbol Description W Wafer process code X GFS sort CZ Assy plant xxx Last 3 digit of diffusion lot VY Diffusion plant MAR Country of origin CZ Test and finishing plant y Assy year yy Assy week Doc ID 11584 Rev 3 13/15 Revision history 8 SD2943 Revision history Table 12. 14/15 Document revision history Date Revision Description of Changes 18-Oct-2005 1 First Issue. 04-Jan-2006 2 Complete version 24-Aug-2011 3 Inserted Chapter 7: Marking, packing and shipping specifications. Minor text changes. Doc ID 11584 Rev 3 SD2943 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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