CLA20EF1200PZ tentative High Efficiency Thyristor VDRM = 1200 V I TAV = 20 A VT = 1,4 V Triode Single Reverse Conducting Thyristor Part number CLA20EF1200PZ Backside: anode 4 3 1 Features / Advantages: Applications: Package: TO-263 (D2Pak-HV) ● Thyristor for fast turn-on switching ● Integrated free wheeling diode ● Planar passivated chip ● Long-term stability ● Ignition for HD lamps ● Capacity discharge ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150929 CLA20EF1200PZ tentative Ratings Thyristor Conditions Symbol VDSM Definition max. non-repetitive forward blocking voltage TVJ = 25°C VDRM max. repetitive forward blocking voltage TVJ = 25°C 1200 ID drain current TVJ = 25°C 10 µA 1 mA TVJ = 25°C 1,40 V 1,60 V 1,40 V IT = 20 A VF IF = 40 A IT = 20 A IF = 40 A threshold voltage rT slope resistance R thJC thermal resistance junction to case V TVJ = 125°C reverse voltage drop VT0 max. Unit 1300 V VD = 1200 V forward voltage drop average forward current typ. VD = 1200 V VT I TAV min. TVJ = 125 °C TC = 115 °C 1,60 V T VJ = 150 °C 20 A TVJ = 150 °C 0,90 V 25 mΩ DC for power loss calculation only RthCH thermal resistance case to heatsink Ptot total power dissipation I TSM max. forward surge current I²t value for fusing 0,65 K/W K/W 0,25 TC = 25°C 190 W t = 10 ms; (50 Hz), sine TVJ = 45°C 120 A t = 8,3 ms; (60 Hz), sine VR = 0 V 130 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 100 A t = 8,3 ms; (60 Hz), sine VR = 0 V 110 A t = 10 ms; (50 Hz), sine TVJ = 45°C 72 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 70 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 50 A²s 50 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 6 t P = 300 µs pF 10 W 5 W 0,5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = t P = 1 µs; di G /dt = 0,5 A/µs; I TSA = 600 A 60 A 500 A/µs I G = 0,07 A; V = ⅔ VDRM 20 A 1500 A/µs (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current non-repet., I T = TVJ = 150°C 500 V/µs VD = 6 V TVJ = 25 °C 1,3 TVJ = -40 °C 1,6 V VD = 6 V TVJ = 25 °C 20 mA TVJ = -40 °C 35 mA TVJ = 150°C 0,2 V 1 mA TVJ = 25 °C 30 mA R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0,07 A; di G /dt = V 0,5 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 25 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0,07 A; di G /dt = VR = 0,5 A/µs 0 V; I T = 20 A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20150929 CLA20EF1200PZ tentative Package Ratings TO-263 (D2Pak-HV) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 35 Unit A -40 150 °C -40 125 °C 150 °C 1,5 Weight FC 20 mounting force with clip d Spp/App typ. Product Marking C L A 20 EF 1200 PZ IXYS Zyyww Logo Assembly Line Date Code N 4,2 mm terminal to backside 4,7 mm Part description XXXXXXXXX Part No. 60 terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb g = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200V) Current Rating [A] Single Reverse Conducting Thyristor Reverse Voltage [V] TO-263AB (D2Pak) (2HV) 000000 Assembly Code Ordering Standard Ordering Number CLA20EF1200PZ Equivalent Circuits for Simulation I V0 R0 Marking on Product CLA20EF1200PZ * on die level Delivery Mode Tape & Reel Code No. T VJ = 150 °C Thyristor V 0 max threshold voltage 0,9 V R0 max slope resistance * 22 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Quantity 800 Data according to IEC 60747and per semiconductor unless otherwise specified 20150929 CLA20EF1200PZ tentative Outlines TO-263 (D2Pak-HV) Dim. W Supplier Option D1 L1 c2 A1 H D E A 1 4 3 L e1 D2 A2 c 2x e 2x b2 10.92 (0.430) 2x b mm (Inches) W Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.091 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) 9.02 (0.355) E1 A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.3 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 4 3 1 IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150929