VCE
IC
=
=
1700 V
1600 A
ABB HiPakTM
IGBT Module
5SNA 1600N170100
Doc. No. 5SYA1564-01 Oct 06
• Low-loss, rugged SPT chip-set
• Smooth switching SPT chip-set for
good EMC
• Industry standard package
• High power density
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Maximum rated values
1)
Parameter
Symbol
Collector-emitter voltage
max
Unit
VGE = 0 V, Tvj ≥ 25 °C
1700
V
IC
Tc = 80 °C
1600
A
Peak collector current
ICM
tp = 1 ms, Tc = 80 °C
3200
A
20
V
9100
W
IF
1600
A
Peak forward current
IFRM
3200
A
Surge current
IFSM
13200
A
10
µs
4000
V
150
°C
Total power dissipation
DC forward current
VGES
Ptot
-20
Tc = 25 °C, per switch (IGBT)
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave
IGBT short circuit SOA
tpsc
VCC = 1200 V, VCEM CHIP ≤ 1700 V
VGE ≤ 15 V, Tvj ≤ 125 °C
Isolation voltage
Visol
1 min, f = 50 Hz
Junction temperature
Tvj
Junction operating temperature
Tvj(op)
-40
125
°C
Case temperature
Tc
-40
125
°C
Storage temperature
Tstg
-40
125
°C
Mounting torques
2)
min
DC collector current
Gate-emitter voltage
1)
VCES
Conditions
2)
Ms
Base-heatsink, M6 screws
4
6
Mt1
Main terminals, M8 screws
8
10
Mt2
Auxiliary terminals, M4 screws
2
3
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Nm
5SNA 1600N170100
IGBT characteristic values
3)
Parameter
Symbol
Conditions
min
Collector (-emitter)
breakdown voltage
V(BR)CES
VGE = 0 V, IC = 10 mA, Tvj = 25 °C
1700
Collector-emitter 4)
saturation voltage
VCE sat
IC = 1600 A, VGE = 15 V
Collector cut-off current
ICES
VCE = 1700 V, VGE = 0 V
Gate leakage current
IGES
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C
VGE(TO)
IC = 160 mA, VCE = VGE, Tvj = 25 °C
Gate-emitter threshold voltage
Gate charge
Qge
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
Short circuit current
tr
td(off)
tf
Eon
Eoff
ISC
Module stray inductance
Lσ CE
Resistance, terminal-chip
RCC’+EE’
3)
4)
typ
max
Unit
V
Tvj = 25 °C
2.0
2.3
2.6
V
Tvj = 125 °C
2.3
2.6
2.9
V
Tvj = 25 °C
8
mA
Tvj = 125 °C
80
mA
-500
500
nA
4.5
6.5
V
IC = 1600 A, VCE = 900 V,
VGE = -15 V .. 15 V
14.6
µC
152
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C
14.6
nF
6.4
VCC = 900 V,
IC = 1600 A,
RG = 0.82 Ω,
VGE = ±15 V,
Lσ = 50 nH, inductive load
Tvj = 25 °C
290
Tvj = 125 °C
300
Tvj = 25 °C
175
Tvj = 125 °C
190
VCC = 900 V,
IC = 1600 A,
RG = 0.82 Ω,
VGE = ±15 V,
Lσ = 50 nH, inductive load
Tvj = 25 °C
1050
Tvj = 125 °C
1140
Tvj = 25 °C
150
Tvj = 125 °C
170
VCC = 900 V, IC = 1600 A,
VGE = ±15 V, RG = 0.82 Ω,
Lσ = 50 nH, inductive load
Tvj = 25 °C
380
Tvj = 125 °C
530
VCC = 900 V, IC = 1600 A,
VGE = ±15 V, RG = 0.82 Ω,
Lσ = 50 nH, inductive load
Tvj = 25 °C
460
Tvj = 125 °C
590
tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
VCC = 1200 V, VCEM CHIP ≤ 1700 V
ns
ns
ns
ns
mJ
mJ
7200
A
15
nH
TC = 25 °C
0.10
TC = 125 °C
0.13
mΩ
Characteristic values according to IEC 60747 – 9
Collector-emitter saturation voltage is given at chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-01 Oct 06
page 2 of 9
5SNA 1600N170100
Diode characteristic values
Parameter
Forward voltage
6)
5)
Symbol
Conditions
VF
IF = 1600 A
Reverse recovery current
Irr
Recovered charge
Qrr
Reverse recovery time
trr
Reverse recovery energy
5)
6)
VCC = 900 V,
IF = 1600 A,
VGE = ±15 V,
RG = 0.82 Ω
Lσ = 50 nH
inductive load
Erec
min
typ
max
Tvj = 25 °C
1.65
2.0
Tvj = 125 °C
1.7
2.0
Tvj = 25 °C
1090
Tvj = 125 °C
1400
Tvj = 25 °C
390
Tvj = 125 °C
690
Tvj = 25 °C
620
Tvj = 125 °C
830
Tvj = 25 °C
280
Tvj = 125 °C
480
Unit
V
A
µC
ns
mJ
Characteristic values according to IEC 60747 – 2
Forward voltage is given at chip level
Thermal properties
7)
Parameter
Symbol
IGBT thermal resistance
junction to case
Rth(j-c)IGBT
0.011 K/W
Diode thermal resistance
junction to case
Rth(j-c)DIODE
0.018 K/W
IGBT thermal resistance
case to heatsink
2)
Diode thermal resistance
case to heatsink
7)
2)
Conditions
min
max
Unit
Rth(c-s)IGBT IGBT per switch, λ grease = 1W/m x K
0.012
K/W
Rth(c-s)DIODE Diode per switch, λ grease = 1W/m x K
0.024
K/W
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
Mechanical properties
7)
Parameter
Symbol
Dimensions
LxW
x
Conditions
H Typical , see outline drawing
min
typ
max
130 x 140 x 38
Clearance distance in air
da
according to IEC 60664-1 Term. to base:
and EN 50124-1
Term. to term:
19
Surface creepage distance
ds
according to IEC 60664-1 Term. to base:
and EN 50124-1
Term. to term:
32
Mass
m
7)
typ
Unit
mm
mm
19
mm
32
920
g
Thermal and mechanical properties according to IEC 60747 – 15
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-01 Oct 06
page 3 of 9
5SNA 1600N170100
Electrical configuration
Outline drawing
2)
Note: all dimensions are shown in mm
2)
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for industrial level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-01 Oct 06
page 4 of 9
5SNA 1600N170100
3200
3200
2800
2800
VCE = 25 V
25 °C
2400
2000
2000
IC [A]
IC [A]
125 °C
2400
1600
1600
1200
1200
125 °C
800
800
400
400
25 °C
VGE = 15 V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
VCE [V]
Fig. 1
7
8
9 10 11 12 13
VGE [V]
Fig. 2
Typical on-state characteristics, chip level
3200
Typical transfer characteristics, chip level
3200
17V
17V
2800
2800
15V
15V
13V
13V
2400
2400
11V
11V
2000
9V
2000
9V
IC [A]
IC [A]
6
1600
1600
1200
1200
800
800
400
400
Tvj = 125 °C
Tvj = 25 °C
0
0
0
1
2
3
4
5
6
0
VCE [V]
Fig. 3
Typical output characteristics, chip level
1
2
3
4
5
6
VCE [V]
Fig. 4
Typical output characteristics, chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-01 Oct 06
page 5 of 9
5SNA 1600N170100
1.6
4.0
VCC = 900 V
VCEM ≤ 1700 V
RG = 0.82 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 50 nH
1.4
1.2
3.5
3.0
2.5
Eon, Eoff [J]
1.0
Eon, Eoff [J]
VCC = 900 V
VCEM ≤ 1700 V
IC = 1600 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 50 nH
0.8
Eoff
0.6
Eon
Eon
2.0
1.5
0.4
1.0
0.2
0.5
Eoff
Esw[mJ] = 1.63 x 10-4 x IC2 +0.275 x I C + 258
0.0
0.0
0
1000
2000
3000
4000
0
1
2
3
4
5
IC [A]
Fig. 5
Typical switching energies per pulse
vs collector current
Fig. 6
8
9 10 11 12 13
Typical switching energies per pulse
vs gate resistor
VCC = 900 V
VCEM ≤ 1700 V
IC = 1600 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 50 nH
1
td(on)
tf
0.1
VCC = 900 V
VCEM ≤ 1700 V
RG = 0.82 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 50 nH
tr
0.01
td(on), tr, td(off), tf [µs]
td(off)
td(on), tr, td(off), tf [µs]
7
10
10
td(off)
td(on)
1
tr
tf
0.1
0
1000
2000
3000
4000
0
IC [A]
Fig. 7
6
RG [ohm]
Typical switching times
vs collector current
1
2
3
4
5
6
7
8
9 10 11 12 13
RG [ohm]
Fig. 8
Typical switching times
vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-01 Oct 06
page 6 of 9
5SNA 1600N170100
1000
20
VCC = 900 V
Cies
15
100
VGE [V]
C [nF]
VCC = 1300 V
Coes
10
10
Cres
5
VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
IC = 1600 A
Tvj = 25 °C
0
1
0
Fig. 9
5
10
15
20
VCE [V]
25
30
0
35
Typical capacitances
vs collector-emitter voltage
Fig. 10
2
4
6
Qg [µC]
8
10
12
Typical gate charge characteristics
2.5
VCC ≤ 1200 V, Tvj = 125 °C
VGE = ±15 V, RG = 0.82 ohm
2
ICpulse / IC
1.5
1
0.5
Chip
Module
0
0
Fig. 11
500
1000
VCE [V]
1500
2000
Turn-off safe operating area (RBSOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-01 Oct 06
page 7 of 9
5SNA 1600N170100
800
VCC = 900 V
RG = 0.82 ohm
Tvj = 125 °C
Lσ = 50 nH
700
1400
600
Erec
1000
Qrr
400
300
-5
Erec
2
Erec [mJ] = -4 x 10 x I F + 0.314 x I F + 95
0
0
0
1000
2000
3000
4000
0
1
IF [A]
2
RG = 6.8 Ω
100
200
RG = 12 Ω
200
400
Fig. 12
RG = 4.7 Ω
600
RG = 0.56 Ω
800
500
RG = 0.82 Ω
Qrr
1000
1200
RG = 1.2 Ω
1200
Erec [mJ], Qrr [µC]
Erec [mJ], Irr [A], Qrr [µC]
1400
Irr
RG = 2.2 Ω
1600
1600
Irr
VCC = 900 V
IC = 1600 A
Tvj = 125 °C
Lσ = 50 nH
Irr [A]
1800
800
600
400
200
0
3
4
5
6
7
8
9 10 11
di/dt [kA/µs]
Typical reverse recovery characteristics
vs forward current
Fig. 13
Typical reverse recovery characteristics
vs di/dt
3200
3600
2800
3200
25°C
VCC ≤ 1200 V
di/dt ≤ 8 kA/µs
Tvj = 125 °C
2800
2400
125°C
2400
IR [A]
IF [A]
2000
1600
2000
1600
1200
1200
800
800
400
400
0
0
0
0.5
1
1.5
2
2.5
0
VF [V]
Fig. 14
Typical diode forward characteristics,
chip level
500
1000
1500
2000
VR [V]
Fig. 15
Safe operating area diode (SOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-01 Oct 06
page 8 of 9
5SNA 1600N170100
0.1
Analytical function for transient thermal
impedance:
Zth(j-c) Diode
Z th (j-c) (t) = ∑ R i (1 - e -t/τ i )
0.01
i =1
0.001
i
1
2
3
4
IGBT
Zth(j-c) IGBT
Ri(K/kW)
7.59
1.8
0.743
0.369
τi(ms)
202
20.3
2.01
0.52
DIODE
Zth(j-c) [K/W] IGBT, DIODE
n
Ri(K/kW)
12.6
2.89
1.3
1.26
τi(ms)
210
29.6
7.01
1.49
0.0001
0.001
Fig. 16
0.01
0.1
t [s]
1
10
Thermal impedance vs time
For detailed information refer to:
• 5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays
• 5SYA 2043-01 Load – cycle capability of HiPaks
• 5SZK 9120-00 Specification of environmental class for HiPak (available upon request)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1564-01 Oct 06