SCT2120AF
Data Sheet
N-channel SiC power MOSFET
lOutline
VDSS
650V
RDS(on) (Typ.)
120mW
ID
29A
PD
165W
lFeatures
TO220AB
(1) (2) (3)
lInner circuit
1) Low on-resistance
(1) Gate
(2) Drain
(3) Source
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
*1 Body Diode
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packing
lApplication
・Solar inverters
Tube
Reel size (mm)
-
Tape width (mm)
-
Type
・DC/DC converters
Basic ordering unit (pcs)
50
・Switch mode power supplies
Packing code
C
・Induction heating
Marking
SCT2120AF
・Motor drives
lAbsolute maximum ratings (Ta = 25C)
Parameter
Symbol
Value
Unit
VDSS
650
V
Tc = 25C
ID *1
29
A
Tc = 100C
ID *1
20
A
ID,pulse *2
72
A
VGSS
-6 to 22
V
VGSS-surge*3
-10 to 26
V
Power dissipation (Tc = 25C)
PD
165
W
Junction temperature
Tj
175
C
Tstg
-55 to +175
C
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage (DC)
Gate - Source surge voltage (Tsurge ˂ 300nsec)
Range of storage temperature
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1/13
2015.11 - Rev.D
Data Sheet
SCT2120AF
lThermal resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
Thermal resistance, junction - case
RthJC
-
0.70
0.91
C/W
Soldering temperature, wavesoldering for 10s
Tsold
-
-
265
C
lElectrical characteristics (Ta = 25C)
Values
Parameter
Drain - Source breakdown
voltage
Symbol
V(BR)DSS
Conditions
Unit
Min.
Typ.
Max.
650
-
-
V
Tj = 25C
-
1
10
A
Tj = 150°C
-
2
-
VGS = 0V, ID = 1mA
VDS = 650V, VGS = 0V
Zero gate voltage
drain current
IDSS
Gate - Source leakage current
IGSS+
VGS = +22V, VDS = 0V
-
-
100
nA
Gate - Source leakage current
IGSS-
VGS = -6V, VDS = 0V
-
-
-100
nA
1.6
2.8
4.0
V
Gate threshold voltage
VGS (th)
VDS = VGS, ID = 3.3mA
*1 Limited only by maximum temperature allowed.
*2 PW  10s, Duty cycle  1%
*3 Example of acceptable Vgs waveform
*4 Pulsed
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2/13
2015.11 - Rev.D
Data Sheet
SCT2120AF
lElectrical characteristics (Ta = 25C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
-
120
156
Tj = 125°C
-
149
-
f = 1MHz, open drain
-
13.8
-
W
S
VGS = 18V, ID = 10A
Static drain - source
on - state resistance
Gate input resistance
RDS(on) *4 Tj = 25C
RG
Transconductance
gfs *4
VDS = 10V, ID = 10A
-
2.7
-
Input capacitance
Ciss
VGS = 0V
-
1200
-
Output capacitance
Coss
VDS = 500V
-
90
-
Reverse transfer capacitance
Crss
f = 1MHz
-
13
-
Effective output capacitance,
energy related
Co(er)
VGS = 0V
VDS = 0V to 300V
-
115
-
Turn - on delay time
td(on) *4
VDD = 300V, ID = 10A
-
22
-
VGS = 18V/0V
-
31
-
td(off) *4
RL = 30W
-
60
-
tf *4
RG = 0W
-
19
-
-
61
-
tr *4
Rise time
Turn - off delay time
Fall time
Turn - on switching loss
Turn - off switching loss
Eon *4
Eoff *4
mW
pF
pF
ns
VDD = 300V, ID=10A
VGS = 18V/0V
RG = 0Ω, L=500µH
*Eon includes diode
reverse recovery
µJ
-
41
-
lGate Charge characteristics (Ta = 25C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
Total gate charge
Qg *4
VDD = 300V
-
61
-
Gate - Source charge
Qgs *4
ID = 10A
-
14
-
Gate - Drain charge
Qgd
VGS = 18V
-
21
-
VDD = 300V, ID = 10A
-
10.4
-
Gate plateau voltage
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*4
V(plateau)
3/13
nC
V
2015.11 - Rev.D
Data Sheet
SCT2120AF
lBody diode electrical characteristics (Source-Drain) (Ta = 25C)
Values
Parameter
Symbol
Inverse diode continuous,
forward current
Conditions
Unit
IS *1
Min.
Typ.
Max.
-
-
29
A
-
-
72
A
-
4.3
-
V
-
33
-
ns
-
53
-
nC
-
3.0
-
A
Tc = 25C
Inverse diode direct current,
pulsed
ISM *2
Forward voltage
VSD *4
Reverse recovery time
trr
VGS = 0V, IS = 10A
*4
Reverse recovery charge
Qrr *4
Peak reverse recovery current
Irrm *4
IF = 10A, VR = 400V
di/dt = 160A/s
lTypical Transient Thermal Characteristics
Symbol
Value
Rth1
96.1m
Rth2
404m
Rth3
196m
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Unit
K/W
4/13
Symbol
Value
Cth1
1.55m
Cth2
5.23m
Cth3
83.3m
Unit
Ws/K
2015.11 - Rev.D
Data Sheet
SCT2120AF
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
180
100
Operation in
this area is
limited
by RDS(ON)
140
Drain Current : ID [A]
Power Dissipation : PD [W]
160
120
100
80
60
40
10
PW = 100s
PW = 1ms
PW = 10ms
1
PW = 100ms
Ta = 25ºC
Single Pulse
20
0.1
0
0
50
100
150
200
0.1
1
10
100
1000
Drain - Source Voltage : VDS [V]
Junction Temperature : Tj [°C]
Transient Thermal Resistance : Rth [K/W]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
1
0.1
0.01
Ta = 25ºC
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width : PW [s]
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5/13
2015.11 - Rev.D
Data Sheet
SCT2120AF
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(II)
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
VGS= 20V
VGS= 18V
VGS= 16V
Ta = 25ºC
Pulsed
VGS= 14V
Drain Current : ID [A]
Drain Current : ID [A]
Fig.4 Typical Output Characteristics(I)
VGS= 12V
10V
8V
0
2
4
6
8
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
VGS= 20V
VGS= 18V
VGS= 16V
VGS= 14V
VGS= 12V
VGS= 10V
VGS= 8V
0
10
Drain Current : ID [A]
Drain Current : ID [A]
VGS= 20V
VGS= 18V
VGS= 16V
VGS= 14V
VGS= 12V
VGS= 10V
0
2
4
6
Ta = 150ºC
Pulsed
8
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
3
4
5
VGS= 20V
VGS= 18V
VGS= 16V
VGS= 14V
VGS= 12V
VGS= 10V
VGS= 8V
Ta = 150ºC
Pulsed
0
10
1
2
3
4
5
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
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2
Fig.7 Tj = 150°C Typical Output
Characteristics(II)
Fig.6 Tj = 150°C Typical Output
Characteristics(I)
VGS= 8V
1
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
Ta = 25ºC
Pulsed
6/13
2015.11 - Rev.D
Data Sheet
SCT2120AF
lElectrical characteristic curves
Fig.8 Typical Transfer Characteristics (I)
Fig.9 Typical Transfer Characteristics (II)
10
24
22
VDS = 10V
Pulsed
1
18
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
0.1
16
Drain Current : ID [A]
Drain Current : ID [A]
VDS = 10V
Pulsed
20
0.01
14
12
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
10
8
6
4
2
0.001
0
0
2
4
6
8
10 12 14 16 18 20
0
Gate - Source Voltage : VGS [V]
4
6
8
10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
Fig.11 Transconductance vs. Drain Current
Fig.10 Gate Threshold Voltage
vs. Junction Temperature
10
5
VDS = VGS
ID = 3.3mA
4.5
4
Transconductance : gfs [S]
Gate Threshold Voltage : V GS(th) [V]
2
3.5
3
2.5
2
VDS = 10V
Pulsed
1
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
1.5
1
0.5
0
-50
0
50
100
150
200
Junction Temperature : Tj [°C]
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0.01
0.01
0.1
1
10
Drain Current : ID [A]
7/13
2015.11 - Rev.D
Data Sheet
SCT2120AF
Static Drain - Source On-State Resistance
: RDS(on) [Ω]
Fig.12 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
0.6
Ta = 25ºC
Pulsed
0.5
0.4
0.3
ID = 21A
0.2
ID = 10A
0.1
0
6
8
10
12
14
16
18
20
22
Static Drain - Source On-State Resistance
: RDS(on) [Ω]
Gate - Source Voltage : VGS [V]
Static Drain - Source On-State Resistance
: RDS(on) [Ω]
lElectrical characteristic curves
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
0.3
VGS = 18V
Pulsed
0.25
0.2
ID = 20A
0.15
ID = 10A
0.1
0.05
0
-50
0
50
100
150
200
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current
1
VGS = 18V
Pulsed
Ta = 150ºC
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
0.1
1
10
100
Drain Current : ID [A]
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8/13
2015.11 - Rev.D
Data Sheet
SCT2120AF
lElectrical characteristic curves
Fig.15 Typical Capacitance
vs. Drain - Source Voltage
Fig.16 Coss Stored Energy
25
10000
Capacitance : C [pF]
1000
Coss Stored Energy : EOSS [µJ]
Ta = 25ºC
Ciss
100
Coss
Crss
10
Ta = 25ºC
f = 1MHz
VGS = 0V
20
15
10
5
0
1
0.1
1
10
100
0
1000
Drain - Source Voltage : VDS [V]
400
600
800
Drain - Source Voltage : VDS [V]
Fig.18 Dynamic Input Characteristics
Fig.17 Switching Characteristics
20
10000
1000
td(off)
Ta = 25ºC
VDD = 300V
VGS = 18V
RG = 0Ω
Gate - Source Voltage : VGS [V]
tf
Switching Time : t [ns]
200
100
td(on)
10
tr
1
0.1
1
10
100
15
10
5
0
0
10
20
30
40
50
60
70
Total Gate Charge : Qg [nC]
Drain Current : ID [A]
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Ta = 25ºC
VDD =300V
ID = 10A
Pulsed
9/13
2015.11 - Rev.D
Data Sheet
SCT2120AF
lElectrical characteristic curves
Fig.19 Typical Switching Loss
vs. Drain - Source Voltage
Fig.20 Typical Switching Loss
vs. Drain Current
500
120
Switching Energy : E [µJ]
450
Ta = 25ºC
ID=10A
VGS = 18V/0V
RG = 0Ω
L=500µH
100
90
80
Ta = 25ºC
VDD=300V
VGS = 18V/0V
RG = 0Ω
L=500µH
400
Switching Energy : E [µJ]
110
Eon
70
60
50
Eoff
40
30
20
350
Eon
300
250
200
150
100
Eoff
50
10
0
0
0
100
200
300
400
500
Drain - Source Voltage : VDS [V]
0
5
10
15
20
25
30
Drain - Current : ID [A]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
Switching Energy : E [µJ]
200
Ta = 25ºC
VDD=300V
ID=10A
VGS = 18V/0V
L=500µH
150
Eon
100
Eoff
50
0
0
5
10
15
20
25
30
External Gate Resistance : RG [Ω]
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10/13
2015.11 - Rev.D
Data Sheet
SCT2120AF
lElectrical characteristic curves
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
1000
VGS = 0V
Pulsed
Reverse Recovery Time : trr [ns]
Inverse Diode Forward Current : IS [A]
100
10
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
1
0.1
Ta = 25ºC
di / dt = 160A / µs
VR = 400V
VGS = 0V
Pulsed
100
10
0.01
0
1
2
3
4
5
6
7
8
Source - Drain Voltage : VSD [V]
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1
10
100
Inverse Diode Forward Current : IS [A]
11/13
2015.11 - Rev.D
Data Sheet
SCT2120AF
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2　Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Switching Energy Measurement Circuit
Fig.3-2 Switching Waveforms
Eon = ID×VDS
Same type
device as
D.U.T.
VDS
Irr
Eoff = ID×VDS
Vsurge
D.U.T.
ID
ID
Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform
D.U.T.
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12/13
2015.11 - Rev.D
Data Sheet
SCT2120AF
lDimensions (Unit : mm)
TO-220AB
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© 2015 ROHM Co., Ltd. All rights reserved.
13/13
2015.11 - Rev.D
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
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R1102B