SCT2H12NZ
Data Sheet
N-channel SiC power MOSFET
lOutline
VDSS
1700V
RDS(on) (Typ.)
1.15W
ID
3.7A
PD
35W
TO-3PFM
(1) (2)
(3)
lInner circuit
lFeatures
(1) Gate
(2) Drain
(3) Source
1) Low on-resistance
2) Fast switching speed
3) Long creepage distance
*1 Body Diode
4) Simple to drive
5) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
lApplication
• Auxilialy power supplies
Tube
Reel size (mm)
-
Tape width (mm)
-
Type
Basic ordering unit (pcs)
• Switch mode power supplies
Taping code
30
-
Marking
SCT2H12NZ
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
VDSS
1700
V
Tc = 25°C
ID *1
3.7
A
Tc = 100°C
ID *1
2.6
A
ID,pulse *2
9.2
A
VGSS
-6 to 22
V
VGSS-surge*3
-10 to 26
V
Power dissipation (Tc = 25°C)
PD
35
W
Junction temperature
Tj
175
°C
Tstg
-55 to +175
°C
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage (DC)
Gate - Source surge voltage (Tsurge ˂ 300nsec)
Range of storage temperature
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/13
2015.12 - Rev.A
Data Sheet
SCT2H12NZ
lThermal resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
Thermal resistance, junction - case
RthJC
-
3.32
4.32
°C/W
Thermal resistance, junction - ambient
RthJA
-
36.8
50
°C/W
Soldering temperature, wavesoldering for 10s
Tsold
-
-
265
°C
lElectrical characteristics (Ta = 25°C)
Values
Parameter
Drain - Source breakdown
voltage
Symbol
V(BR)DSS
Conditions
Unit
Min.
Typ.
Max.
1700
-
-
V
Tj = 25°C
-
0.1
10
A
Tj = 150°C
-
0.2
-
VGS = 0V, ID = 1mA
VDS = 1700V, VGS = 0V
Zero gate voltage
drain current
IDSS
Gate - Source leakage current
IGSS+
VGS = +22V, VDS = 0V
-
-
100
nA
Gate - Source leakage current
IGSS-
VGS = -6V, VDS = 0V
-
-
-100
nA
1.6
2.8
4.0
V
Gate threshold voltage
VGS (th)
VDS = VGS, ID = 0.9mA
*1 Limited only by maximum temperature allowed.
*2 PW  10s, Duty cycle  1%
*3 Example of acceptable Vgs waveform
*4 Pulsed
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/13
2015.12 - Rev.A
Data Sheet
SCT2H12NZ
lElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
-
1.15
1.5
Tj = 125°C
-
1.71
-
RG
f = 1MHz, open drain
-
64
-
W
Transconductance
gfs *4
VDS = 10V, ID = 1.1A
-
0.4
-
S
Input capacitance
Ciss
VGS = 0V
-
184
-
Output capacitance
Coss
VDS = 800V
-
16
-
Reverse transfer capacitance
Crss
f = 1MHz
-
6
-
Effective output capacitance,
energy related
Co(er)
VGS = 0V
VDS = 0V to 800V
-
17
-
Turn - on delay time
td(on) *4
VDD = 500V, ID = 1.1A
-
16
-
VGS = 18V/0V
-
21
-
RL = 455W
-
35
-
RG = 0W
-
74
-
-
57
-
VGS = 18V, ID = 1.1A
Static drain - source
on - state resistance
Gate input resistance
RDS(on) *4 Tj = 25°C
tr *4
Rise time
Turn - off delay time
td(off) *4
tf *4
Fall time
Turn - on switching loss
Turn - off switching loss
Eon *4
Eoff *4
W
pF
pF
ns
VDD = 800V, ID=1.1A
VGS = 18V/0V
RG = 0W, L=2mH
*Eon includes diode
reverse recovery
J
-
32
-
lGate Charge characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
Total gate charge
Qg *4
VDD = 500V
-
14
-
Gate - Source charge
Qgs *4
ID =1A
-
4
-
Gate - Drain charge
Qgd
VGS = 18V
-
5
-
VDD = 500V, ID = 1A
-
10.5
-
Gate plateau voltage
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
*4
V(plateau)
3/13
nC
V
2015.12 - Rev.A
Data Sheet
SCT2H12NZ
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Values
Parameter
Symbol
Inverse diode continuous,
forward current
Conditions
Unit
IS *1
Min.
Typ.
Max.
-
-
4
A
-
-
10
A
-
4.3
-
V
-
21
-
ns
-
13
-
nC
-
1.1
-
A
Tc = 25°C
Inverse diode direct current,
pulsed
ISM *2
Forward voltage
VSD *4
Reverse recovery time
trr
VGS = 0V, IS = 1.1A
*4
*4
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm *4
IF = 1.1A, VR = 800V
di/dt = A/s
lTypical Transient Thermal Characteristics
Symbol
Value
Rth1
816m
Rth2
1939m
Rth3
567m
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
Unit
K/W
4/13
Symbol
Value
Cth1
127µ
Cth2
1.64m
Cth3
64.5m
Unit
Ws/K
2015.12 - Rev.A
Data Sheet
SCT2H12NZ
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
100
40
Operation in this area
is limited by RDS(on)
30
Drain Current : ID [A]
Power Dissipation : PD [W]
35
25
20
15
10
PW = 100s
PW = 1ms
10
PW = 10ms
1
PW = 100ms
0.1
Ta = 25ºC
Single Pulse
5
0
0.01
0
50
100
150
200
0.1
1
10
100
1000
10000
Drain - Source Voltage : VDS [V]
Junction Temperature : Tj [°C]
Transient Thermal Resistance : Rth [K/W]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
10
1
Ta = 25ºC
Single Pulse
0.1
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Pulse Width : PW [s]
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/13
2015.12 - Rev.A
Data Sheet
SCT2H12NZ
lElectrical characteristic curves
Fig.4 Typical Output Characteristics(I)
1.8
3.5
1.6
VGS= 14V
2.5
Ta = 25ºC
Pulsed
2
VGS= 12V
1.5
1
Drain Current : ID [A]
VGS= 18V
3
VGS= 20V
VGS= 16V
VGS= 20V
Drain Current : ID [A]
Fig.5 Typical Output Characteristics(II)
1.4
1.2
VGS= 12V
1
Ta = 25ºC
Pulsed
0.8
0.6
VGS= 10V
0.4
VGS= 10V
0.5
0.2
VGS= 8V
0
0
2
4
6
8
VGS= 8V
0
10
0
Drain - Source Voltage : VDS [V]
1
2
3
4
5
Drain - Source Voltage : VDS [V]
Fig.6 Tj = 150°C Typical Output
Characteristics(I)
Fig.7 Tj = 150°C Typical Output
Characteristics(II)
1.8
3.5
VGS= 20V
VGS= 18V
1.6
3
1.4
VGS= 20V
2.5
Drain Current : ID [A]
Drain Current : ID [A]
VGS= 14V
VGS= 18V
VGS= 16V
VGS= 18V
VGS= 12V
VGS= 16V
2
VGS= 14V
VGS = 10V
1.5
1
0.5
VGS= 16V
VGS= 14V
VGS= 12V
1.2
1
VGS= 10V
0.8
VGS= 8V
0.6
VGS= 8V
0.4
Ta = 150ºC
Pulsed
0.2
Ta = 150ºC
Pulsed
0
0
0
2
4
6
8
0
10
Drain - Source Voltage : VDS [V]
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1
2
3
4
5
Drain - Source Voltage : VDS [V]
6/13
2015.12 - Rev.A
Data Sheet
SCT2H12NZ
lElectrical characteristic curves
Fig.8 Typical Transfer Characteristics (I)
Fig.9 Typical Transfer Characteristics (II)
3
10
VDS = 10V
Pulsed
2.5
Drain Current : ID [A]
Drain Current : ID [A]
VDS = 10V
Pulsed
1
Ta= 175ºC
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
0.1
2
1.5
Ta= 175ºC
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
1
0.5
0
0.01
0
2
4
6
8
0
10 12 14 16 18 20
2
6
8
10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
Gate - Source Voltage : VGS [V]
Fig.10 Gate Threshold Voltage
vs. Junction Temperature
Fig.11 Transconductance vs. Drain Current
5
1
VDS = 10V
Pulsed
VDS = 10V
ID = 0.41mA
4.5
4
Transconductance : gfs [S]
Gate Threshold Voltage : VGS(th) [V]
4
3.5
3
2.5
2
1.5
1
0.1
Ta= 175ºC
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
0.5
0
-50
0
50
100
150
0.01
0.01
200
Junction Temperature : Tj [°C]
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
0.1
1
10
Drain Current : ID [A]
7/13
2015.12 - Rev.A
Data Sheet
SCT2H12NZ
lElectrical characteristic curves
3
Ta = 25ºC
Pulsed
2.5
2
ID = 2.2A
1.5
ID = 1.1A
1
0.5
0
8
10
12
14
16
18
20
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: RDS(on) [W]
Static Drain - Source On-State Resistance
: RDS(on) [W]
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
22
Gate - Source Voltage : VGS [V]
3
2.5
VGS = 18V
Pulsed
2
1.5
ID = 2.2A
1
ID = 1.1A
0.5
0
-50
0
50
100
150
200
Junction Temperature : Tj [ºC]
Static Drain - Source On-State Resistance
: RDS(on) [W]
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current
10
VGS = 18V
Pulsed
1
Ta = 175ºC
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
0.1
1
10
Drain Current : ID [A]
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
8/13
2015.12 - Rev.A
Data Sheet
SCT2H12NZ
lElectrical characteristic curves
Fig.15 Typical Capacitance
vs. Drain - Source Voltage
Fig.16 Coss Stored Energy
7
Coss Stored Energy : EOSS [J]
1000
Capacitance : C [pF]
Ciss
100
Coss
10
Crss
Ta = 25ºC
f = 1MHz
VGS = 0V
Ta = 25ºC
6
5
4
3
2
1
0
1
0.1
1
10
100
0
1000
Drain - Source Voltage : VDS [V]
400
600
800
1000
Drain - Source Voltage : VDS [V]
Fig.18 Dynamic Input Characteristics
Fig.17 Switching Characteristics
1000
20
Ta = 25ºC
VDD = 500V
VGS = 18V
RG = 0W
Pulsed
tf
100
Gate - Source Voltage : VGS [V]
Switching Time : t [ns]
200
td(off)
tr
td(on)
10
Ta = 25ºC
VDD = 500V
ID = 1A
Pulsed
18
16
14
12
10
8
6
4
2
0
0.1
1
10
0
4
6
8
10
12
14
16
Total Gate Charge : Qg [nC]
Drain Current : ID [A]
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2
9/13
2015.12 - Rev.A
Data Sheet
SCT2H12NZ
lElectrical characteristic curves
Fig.19 Typical Switching Loss
vs. Drain - Source Voltage
Fig.20 Typical Switching Loss
vs. Drain Current
100
Ta = 25ºC
ID=1.1A
VGS = 18V/0V
RG=0W
L=2mH
Switching Energy : E [J]
90
80
70
Switching Energy : E [J]
250
Eon
60
50
40
Eoff
30
20
Ta = 25ºC
VDD=800V
VGS = 18V/0V
RG=0W
L=2mH
200
Eon
150
100
Eoff
50
10
0
0
500
600
700
800
900
1000
0
1100
Drain - Source Voltage : VDS [V]
1
2
3
4
5
Drain Current : ID [A]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
140
Ta = 25ºC
VDD=800V
ID=1.1A
VGS = 18V/0V
L=2mH
Switching Energy : E [J]
120
100
Eon
80
60
Eoff
40
20
0
0
20
40
60
80
100
External Gate Resistance : RG [W]
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
10/13
2015.12 - Rev.A
Data Sheet
SCT2H12NZ
lElectrical characteristic curves
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
10
1000
VGS = 0V
Pulsed
1
Ta = 175ºC
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
Reverse Recovery Time : trr [ns]
Inverse Diode Forward Current : IS [A]
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
0.01
Ta = 25ºC
di / dt = 300A / us
VR = 800V
VGS = 0V
Pulsed
100
10
0
1
2
3
4
5
6
7
8
1
Source - Drain Voltage : VSD [V]
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
10
Inverse Diode Forward Current : IS [A]
11/13
2015.12 - Rev.A
Data Sheet
SCT2H12NZ
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2　Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Switching Energy Measurement Circuit
Fig.3-2 Switching Waveforms
Eon = ID×VDS
Same type
device as
D.U.T.
VDS
Irr
Eoff = ID×VDS
Vsurge
D.U.T.
ID
ID
Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform
D.U.T.
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
12/13
2015.12 - Rev.A
Data Sheet
SCT2H12NZ
lDimensions (Unit : mm)
TO-3PFM
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
13/13
2015.12 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
R1102B