MD170HFN100C1S
MOSFET Module
STARPOWER
SEMICONDUCTOR
MOSFET
MD170HFN100C1S
Molding Type Module
100V/170A 2 in one-package
General Description
STARPOWER MOSFET Power Module provides
very low RDS(on) as well as optimized intrinsic diode.
It’s designed for the applications such SMPS and
DC drives.
Features





Low RDS(on)
Optimized intrinsic reverse diode
Low inductance case avoid oscillations
Kelvin source terminals for easy drive
Isolated copper baseplate using DBC technology
Equivalent Circuit Schematic
Typical Applications





Main and auxiliary AC drives of electric vehicles
DC servo and robot drives
Battery vehicles
UPS equipment
Plasma cutting
©2012 STARPOWER Semiconductor Ltd.
6/24/2012
1/7
Rev.A
MD170HFN100C1S
MOSFET Module
Absolute Maximum Ratings TC=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IF
PD
Tjmax
Tjop
TSTG
VISO
Mounting
Torque
Description
Drain-Source Voltage
Gate-Source Voltage
Drain Current @ TC=25oC
@ TC=100oC
Diode Forward Current
Maximum Power Dissipation @ Tj=175oC
Maximum Junction Temperature
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage RMS,f=50Hz,t=1min
Power Terminal Screw:M5
Mounting Screw:M6
MD340HFN100C1S
100
±30
170
120
170
425
175
-40 to +150
-40 to +125
2500
2.5 to 5.0
3.0 to 5.0
Units
V
V
A
A
W
o
C
o
C
o
C
V
N.m
Electrical Characteristics of MOSFET TC=25oC unless otherwise noted
Off Characteristics
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Drain-Source Breakdown
Voltage
Drain-Source Leakage
Current
Gate-Source Leakage
Current
Test Conditions
Tj=25oC
Min.
Typ.
Max.
100
Units
V
VDS=VDSS,VGS=0V,
Tj=25oC
VGS=VGSS,VDS=0V,
Tj=25oC
25
μA
100
nA
Max.
Units
5.0
V
9.00
mΩ
On Characteristics
Symbol
VGS(th)
RDS(on)
gfs
Parameter
Gate-Source Threshold
Voltage
Static Drain-Source
On-Resistance
Forward
Transconductance
Test Conditions
ID=250μA,VDS=VGS,
Tj=25oC
ID=100A,VGS=10V,
Tj=25oC
VDS=50V,ID=100A
©2012 STARPOWER Semiconductor Ltd.
Min.
Typ.
3.0
52
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S
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Rev.A
MD170HFN100C1S
MOSFET Module
Switching Characteristics
Symbol
RGint
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Ciss
Coss
Crss
LCE
RCC’+EE’
Parameter
Internal Gate
Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller")
Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Stray Inductance
Module Lead
Resistance,Terminal
to Chip
Test Conditions
Min.
VDD=50V,ID=100A,
RG=1.03Ω,VGS=±10V,
Tj=25oC
ID=100A,VDS=80V,
VGS=10V
VGS=0V,VDS=25V,
f=1.0MHz
Typ.
Max.
/
Ω
24
270
45
140
260
49
ns
ns
ns
ns
nC
nC
160
nC
6.79
2.47
nF
nF
0.99
nF
30
TC=25oC
Units
0.75
nH
mΩ
Electrical Characteristics of Inverse Diode TC=25oC unless otherwise
noted
Symbol
VSD
trr
Qrr
Parameter
Diode Forward
Voltage
Diode Reverse
Recovery Time
Diode Reverse
Recovery Charge
Test Conditions
Min.
Typ.
IS=100A,VGS=0V,Tj=25oC
VR=50V,IS=100A,
di/dt=100A/μs, Tj=25oC
Max.
Units
1.30
V
220
ns
1.64
μC
Thermal Characteristics
Symbol
RθJC
RθCS
G
Parameter
Junction-to-Case (per MOSFET)
Case-to-Sink (Conductive grease applied)
Weight of Module
©2012 STARPOWER Semiconductor Ltd.
Typ.
0.05
150
6/24/2012
Max.
0.181
Units
K/W
K/W
g
3/7
Rev.A
MD170HFN100C1S
MOSFET Module
1000
350
300
25oC
100
200
175oC
175oC
ID [A]
ID [A]
250
150
100
VGS=10V
50
0
0
0.5
1
1.5
VDS [V]
2
VDS=50V
1
2.5
Fig 1. Mosfet Output Characteristic
6
20
7
8
9
VGS [V]
10
11
12
VDS=80V
VDS=50V
VDS=20V
18
Id=1.0mA
116
16
112
14
108
VGS [V]
V(BR)DSS [V]
5
Fig 2. Mosfet Transfer Characteristic
120
104
12
10
8
6
100
4
96
92
25oC
10
ID=100A
2
-40
0
40
80 120 160 200
Tj [oC]
Fig 3. Brakedown Voltage vs. Temperature
©2012 STARPOWER Semiconductor Ltd.
0
0
0.1
0.2
QG [μC]
0.3
Fig 4. Gate Charge Characteristic
6/24/2012
4/7
Rev.A
0.4
MD170HFN100C1S
MOSFET Module
1
350
VGS=0V
300
200
ZthJC [K/W]
IS [A]
250
175oC
150
25oC
0.1
100
50
0
i:
1
2
3
4
ri[K/W]: 0.0211 0.1164 0.1131 0.1024
0.01
0.02
0.05
0.1
τi[s]:
0
0.4
0.8
1.2
VSD [V]
1.6
2
Fig 5. Inverse Diode Output Characteristic
©2012 STARPOWER Semiconductor Ltd.
0.01
0.001
0.01
0.1
t [s]
1
Fig 6. Transient Thermal Impedance
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Rev.A
10
MD170HFN100C1S
MOSFET Module
Package Dimensions
Dimensions in Millimeters
©2012 STARPOWER Semiconductor Ltd.
6/24/2012
6/7
Rev.A
MD170HFN100C1S
MOSFET Module
Terms and Conditions of Usage
The data contained in this product datasheet is exclusively intended for technically trained
staff. you and your technical departments will have to evaluate the suitability of the product
for the intended application and the completeness of the product data with respect to such
application.
This product data sheet is describing the characteristics of this product for which a warranty is
granted. Any such warranty is granted exclusively pursuant the terms and conditions of the
supply agreement. There will be no guarantee of any kind for the product and its
characteristics.
Should you require product information in excess of the data given in this product data sheet
or which concerns the specific application of our product, please contact the sales office,
which is responsible for you (see www.powersemi.cc), For those that are specifically
interested we may provide application notes.
Due to technical requirements our product may contain dangerous substances. For
information on the types in question please contact the sales office, which is responsible for
you.
Should you intend to use the Product in aviation applications, in health or live endangering or
life support applications, please notify.
If and to the extent necessary, please forward equivalent notices to your customers.
Changes of this product data sheet are reserved.
©2012 STARPOWER Semiconductor Ltd.
6/24/2012
7/7
Rev.A