MD300HFC120B3S
MOSFET Module
STARPOWER
MOSFET
SEMICONDUCTOR
MD300HFC120B3S
1200V/300A 2 in one-package
General Description
STARPOWER MOSFET Power Module provides
very low RDS(on) as well as optimized intrinsic diode.
It’s designed for the applications such as SMPS and
DC drives.
Features






SiC power MOSFET
Low RDS(on)
Optimized intrinsic reverse diode
Low inductance case avoid oscillations
Kelvin source terminals for easy drive
Isolated copper baseplate using DBC technology
Typical Applications




Main and auxiliary AC drives of electric vehicles
DC servo and robot drives
Battery vehicles
Plasma cutting
Equivalent Circuit Schematic
©2015 STARPOWER Semiconductor Ltd.
5/16/2015
1/9
Preliminary
MD300HFC120B3S
MOSFET Module
Absolute Maximum Ratings TC=25oC unless otherwise noted
MOSFET
Symbol
VDSS
VGSS
ID
IDM
PD
Description
Drain-Source Voltage
Gate-Source Voltage
Drain Current @ TC=25oC
@ TC=100oC
Pulsed Drain Current
Maximum Power Dissipation @ Tj=175oC
Value
1200
-6/+22
480
300
960
892
Unit
V
V
Value
480
960
Unit
A
A
Value
175
-40 to +150
-40 to +125
4000
Unit
o
C
o
C
o
C
V
A
A
W
Body Diode
Symbol
IS
ISM
Description
Source Current
Pulsed Source Current
Module
Symbol
Tjmax
Tjop
TSTG
VISO
Description
Maximum Junction Temperature
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage RMS,f=50Hz,t=1min
©2015 STARPOWER Semiconductor Ltd.
5/16/2015
2/9
Preliminary
MD300HFC120B3S
MOSFET Module
MOSFET Characteristics TC=25oC unless otherwise noted
Symbol
RDS(on)
VGS(th)
gfs
IDSS
IGSS
RGint
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Parameter
Static Drain-Source
On-Resistance
Gate-Source Threshold
Voltage
Forward
Transconductance
Drain-Source Leakage
Current
Gate-Source Leakage
Current
Internal Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller")
Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
Test Conditions
ID=120A,VGS=18V,
Tj=25oC
ID=120A,VGS=18V,
Tj=125oC
ID=52.8mA,VDS=10V,
Tj=25oC
VDS=10V,ID=120A,
Tj=25oC
VDS=VDSS,VGS=0V,
Tj=25oC
VGS=VGSS,VDS=0V,
Tj=25oC
Min.
Typ.
Max.
6.67
9.75
Unit
mΩ
10.4
1.6
4.0
44.4
VGS=0V,VDS=800V,
f=1.0MHz
ID=120A,VDS=400V,
VGS=18V
VDS=600V,ID=120A,
RG=0Ω,VGS=0/18V,
Tj=25oC
V
S
1.0
mA
400
nA
0.69
25.0
0.92
Ω
nF
nF
1.96
nF
1272
324
nC
nC
372
nC
35
36
76
22
ns
ns
ns
ns
2.09
mJ
0.61
mJ
Body Diode Characteristics TC=25oC unless otherwise noted
Symbol
VSD
trr
Qr
IRM
Parameter
Diode Forward
Voltage
Diode Reverse
Recovery Time
Diode Reverse
Recovery Charge
Peak Reverse
Recovery Current
Test Conditions
IS=120A,VGS=0V,Tj=25oC
VR=400V,IS=120A,
di/dt=1800A/μs,VGS=0V,
Tj=25oC
©2015 STARPOWER Semiconductor Ltd.
5/16/2015
Min.
Typ.
Max.
Unit
4.60
V
31
ns
528
nC
27.6
A
3/9
Preliminary
MD300HFC120B3S
MOSFET Module
Module Characteristics TC=25oC unless otherwise noted
Symbol
RthJC
RthCH
M
G
Parameter
Junction-to-Case(per MOSFET)
Case-to-Heatsink (per MOSFET)
Case-to-Heatsink (per Module)
Terminal Connection Torque, Screw M5
Mounting Torque, Screw M6
Weight of Module
©2015 STARPOWER Semiconductor Ltd.
Min.
Typ.
Max.
0.168
0.070
0.035
2.5
3.0
5/16/2015
K/W
5.0
5.0
300
4/9
Unit
K/W
N.m
g
Preliminary
MD300HFC120B3S
MOSFET Module
240
240
210
210
180
VDS=10V
180
25oC
150
150oC
120
ID [A]
ID [A]
150
90
90
60
60
30
150oC
120
25oC
30
VGS=18V
0
0
0
0.5
1
1.5
2
VDS [V]
2.5
3
Fig 1. MOSFET Output Characteristics
0
2
4
6
8
10
12
VGS [V]
Fig 2. MOSFET Transfer Characteristics
20
15
VDS=400V
ID=120A
Tj=25oC
18
VGS=18V,IDS=120A
16
12
9
VGS [V]
RDS(on) [mΩ]
14
6
12
10
8
6
4
3
2
0
0
-60 -30
0
30 60
Tj [oC]
90 120 150
Fig 3. MOSFET On-Resistance vs. Temperature
©2015 STARPOWER Semiconductor Ltd.
0
200 400 600 800 1000 1200 1400
QG [nC]
Fig 4. MOSFET Gate Charge Characteristic
5/16/2015
5/9
Preliminary
MD300HFC120B3S
MOSFET Module
5
12
ID=120A,
RG=0Ω,
VGS=0/18V,
Tj=25oC
4
VDS=600V,
RG=0Ω,
VGS=0/18V,
Tj=25oC
10
8
3
E [mJ]
E [mJ]
Eon
Eon
6
2
4
Eoff
1
2
Eoff
0
0
200
400
600
VDS [V]
800
1000
0
Fig 5. MOSFET Switching Loss vs. VDS
120
180 240
ID [A]
300
360
Fig 6. MOSFET Switching Loss vs. ID
6
2.1
VDS=600V,
ID=120A,
VGS=0/18V,
Tj=25oC
5
1.8
Eon
1.5
Eon
E [mJ]
4
E [mJ]
60
3
2
Eoff
VDS=600V,
ID=120A,
RG=0Ω,
VGS=0/18V,
1.2
0.9
0.6
1
Eoff
0.3
0
0
0
1
2
3
4
5
RG [Ω]
6
7
8
Fig 7. MOSFET Switching Loss vs. RG
©2015 STARPOWER Semiconductor Ltd.
0
25
50
75 100 125 150 175
Tj [oC]
Fig 8. MOSFET Switching Loss vs. Temperature
5/16/2015
6/9
Preliminary
MD300HFC120B3S
MOSFET Module
240
1
VGS=0V
210
Mosfet
180
0.1
150oC
ZthJC [K/W]
ISD [A]
150
120
90
25oC
0.01
60
i:
1
2
3
4
ri[K/W]: 0.0100 0.0554 0.0538 0.0488
0.01
0.02
0.05
0.1
τi[s]:
30
0
0
1
2
3
4
5
6
0.001
0.001
0.01
VSD [V]
Fig 9. Body Diode Output Characteristics
©2015 STARPOWER Semiconductor Ltd.
0.1
t [s]
1
10
Fig 10. MOSFET Transient Thermal Impedance
5/16/2015
7/9
Preliminary
MD300HFC120B3S
MOSFET Module
Circuit Schematic
Package Dimensions
Dimensions in Millimeters
©2015 STARPOWER Semiconductor Ltd.
5/16/2015
8/9
Preliminary
MD300HFC120B3S
MOSFET Module
Terms and Conditions of Usage
The data contained in this product datasheet is exclusively intended for technically trained
staff. you and your technical departments will have to evaluate the suitability of the product
for the intended application and the completeness of the product data with respect to such
application.
This product data sheet is describing the characteristics of this product for which a warranty is
granted. Any such warranty is granted exclusively pursuant the terms and conditions of the
supply agreement. There will be no guarantee of any kind for the product and its
characteristics.
Should you require product information in excess of the data given in this product data sheet
or which concerns the specific application of our product, please contact the sales office,
which is responsible for you (see www.powersemi.cc), For those that are specifically
interested we may provide application notes.
Due to technical requirements our product may contain dangerous substances. For
information on the types in question please contact the sales office, which is responsible for
you.
Should you intend to use the Product in aviation applications, in health or live endangering or
life support applications, please notify.
If and to the extent necessary, please forward equivalent notices to your customers.
Changes of this product data sheet are reserved.
©2015 STARPOWER Semiconductor Ltd.
5/16/2015
9/9
Preliminary