MD150HFC120B3S
MOSFET Module
STARPOWER
MOSFET
SEMICONDUCTOR
MD150HFC120B3S
1200V/150A 2 in one-package
General Description
STARPOWER MOSFET Power Module provides
very low RDS(on) as well as optimized intrinsic diode.
It’s designed for the applications such as SMPS and
DC drives.
Features






SiC power MOSFET
Low RDS(on)
Optimized intrinsic reverse diode
Low inductance case avoid oscillations
Kelvin source terminals for easy drive
Isolated copper baseplate using DBC technology
Typical Applications




Main and auxiliary AC drives of electric vehicles
DC servo and robot drives
Battery vehicles
Plasma cutting
Equivalent Circuit Schematic
©2015 STARPOWER Semiconductor Ltd.
4/23/2015
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Preliminary
MD150HFC120B3S
MOSFET Module
Absolute Maximum Ratings TC=25oC unless otherwise noted
MOSFET
Symbol
VDSS
VGSS
ID
IDM
PD
Description
Drain-Source Voltage
Gate-Source Voltage
Drain Current @ TC=25oC
@ TC=100oC
Pulsed Drain Current
Maximum Power Dissipation @ Tj=175oC
Value
1200
-6/+22
150
100
560
474
Unit
V
V
Value
150
560
Unit
A
A
Value
175
-40 to +150
-40 to +125
4000
Unit
o
C
o
C
o
C
V
A
A
W
Body Diode
Symbol
IS
ISM
Description
Source Current
Pulsed Source Current
Module
Symbol
Tjmax
Tjop
TSTG
VISO
Description
Maximum Junction Temperature
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage RMS,f=50Hz,t=1min
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4/23/2015
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Preliminary
MD150HFC120B3S
MOSFET Module
MOSFET Characteristics TC=25oC unless otherwise noted
Symbol
RDS(on)
VGS(th)
gfs
IDSS
IGSS
RGint
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Parameter
Static Drain-Source
On-Resistance
Gate-Source Threshold
Voltage
Forward
Transconductance
Drain-Source Leakage
Current
Gate-Source Leakage
Current
Internal Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller")
Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
Test Conditions
ID=40A,VGS=18V,
Tj=25oC
ID=40A,VGS=18V,
Tj=125oC
ID=17.6mA,VDS=10V,
Tj=25oC
VDS=10V,ID=40A,
Tj=25oC
VDS=VDSS,VGS=0V,
Tj=25oC
VGS=VGSS,VDS=0V,
Tj=25oC
Min.
Typ.
Max.
20.0
29.3
31.3
1.6
4.0
14.8
VGS=0V,VDS=800V,
f=1.0MHz
ID=40A,VDS=400V,
VGS=18V
VDS=600V,ID=40A,
RG=0Ω,VGS=0/18V,
Tj=25oC
Unit
mΩ
V
S
1.0
mA
400
nA
1.6
8280
308
Ω
pF
pF
64
pF
424
108
nC
nC
124
nC
35
36
76
22
ns
ns
ns
ns
700
μJ
200
μJ
Body Diode Characteristics TC=25oC unless otherwise noted
Symbol
VSD
trr
Qr
IRM
Parameter
Diode Forward
Voltage
Diode Reverse
Recovery Time
Diode Reverse
Recovery Charge
Peak Reverse
Recovery Current
Test Conditions
IS=40A,VGS=0V,Tj=25oC
VR=400V,IS=40A,
di/dt=600A/μs,VGS=0V,
Tj=25oC
©2015 STARPOWER Semiconductor Ltd.
4/23/2015
Min.
Typ.
Max.
Unit
4.60
V
31
ns
156
nC
9.2
A
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Preliminary
MD150HFC120B3S
MOSFET Module
Module Characteristics TC=25oC unless otherwise noted
Symbol
RthJC
RthCH
M
G
Parameter
Junction-to-Case(MOSFET)
Case-to-Sink(MOSFET)
Case-to-Sink(Per Module)
Terminal Connection Torque, Screw M5
Mounting Torque, Screw M6
Weight of Module
©2015 STARPOWER Semiconductor Ltd.
Min.
2.5
3.0
4/23/2015
Typ.
0.070
0.035
300
4/9
Max.
0.316
Unit
K/W
K/W
5.0
5.0
N.m
g
Preliminary
MD150HFC120B3S
80
80
70
70
60
50
ID [A]
150oC
40
30
20
20
10
0.5
1
1.5
2
VDS [V]
2.5
0
3
Fig 1. MOSFET Output Characteristics
4
6
8
10
12
20
VDS=400V
ID=40A
Tj=25oC
18
VGS=18V,IDS=40A
16
14
25
VGS [V]
RDS(on) [mΩ]
2
Fig 2. MOSFET Transfer Characteristics
30
20
15
12
10
8
6
10
4
5
0
0
VGS [V]
40
35
25oC
10
VGS=18V
0
150oC
40
30
0
VDS=10V
60
25oC
50
ID [A]
MOSFET Module
2
-60 -30
0
30 60
Tj [oC]
90 120 150
Fig 3. MOSFET On-Resistance vs. Temperature
©2015 STARPOWER Semiconductor Ltd.
0
0 50 100 150 200 250 300 350 400 450
QG [nC]
Fig 4. MOSFET Gate Charge Characteristic
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Preliminary
MD150HFC120B3S
MOSFET Module
4000
1200
ID=40A,
RG=0Ω,
VGS=0/18V,
Tj=25oC
1000
3000
Eon
800
Eon
2500
E [μJ]
E [μJ]
VDS=600V,
RG=0Ω,
VGS=0/18V,
Tj=25oC
3500
600
400
2000
1500
Eoff
Eoff
1000
200
0
500
200
400
600
VDS [V]
800
0
1000
Fig 5. MOSFET Switching Loss vs. VDS
60
90
ID [A]
120
150
800
VDS=600V,
ID=40A,
VGS=0/18V,
Tj=25oC
1750
1500
700
Eon
600
Eon
VDS=600V,
ID=40A,
RG=0Ω,
VGS=0/18V,
500
E [μJ]
1250
E [μJ]
30
Fig 6. MOSFET Switching Loss vs. ID
2000
1000
750
400
300
Eoff
500
200
250
100
0
0
0
1
2
3
4 5
RG [Ω]
6
7
8
Fig 7. MOSFET Switching Loss vs. RG
©2015 STARPOWER Semiconductor Ltd.
0
Eoff
0
25
50
75 100 125 150 175
Tj [oC]
Fig 8. MOSFET Switching Loss vs. Temperature
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Preliminary
MD150HFC120B3S
MOSFET Module
80
1
VGS=0V
70
Mosfet
60
0.1
150oC
ZthJC [K/W]
ISD [A]
50
40
30
25oC
0.01
20
i:
1
2
3
4
ri[K/W]: 0.0188 0.1042 0.1012 0.0918
0.01
0.02
0.05
0.1
τi[s]:
10
0
0
1
2
3
4
5
6
0.001
0.001
0.01
VSD [V]
Fig 9. Body Diode Output Characteristics
©2015 STARPOWER Semiconductor Ltd.
0.1
t [s]
1
10
Fig 10. MOSFET Transient Thermal Impedance
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Preliminary
MD150HFC120B3S
MOSFET Module
Circuit Schematic
Package Dimensions
Dimensions in Millimeters
©2015 STARPOWER Semiconductor Ltd.
4/23/2015
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Preliminary
MD150HFC120B3S
MOSFET Module
Terms and Conditions of Usage
The data contained in this product datasheet is exclusively intended for technically trained
staff. you and your technical departments will have to evaluate the suitability of the product
for the intended application and the completeness of the product data with respect to such
application.
This product data sheet is describing the characteristics of this product for which a warranty is
granted. Any such warranty is granted exclusively pursuant the terms and conditions of the
supply agreement. There will be no guarantee of any kind for the product and its
characteristics.
Should you require product information in excess of the data given in this product data sheet
or which concerns the specific application of our product, please contact the sales office,
which is responsible for you (see www.powersemi.cc), For those that are specifically
interested we may provide application notes.
Due to technical requirements our product may contain dangerous substances. For
information on the types in question please contact the sales office, which is responsible for
you.
Should you intend to use the Product in aviation applications, in health or live endangering or
life support applications, please notify.
If and to the extent necessary, please forward equivalent notices to your customers.
Changes of this product data sheet are reserved.
©2015 STARPOWER Semiconductor Ltd.
4/23/2015
9/9
Preliminary