EMI in power supplies Alfred Hesener Fairchild Semiconductor Europe www.fairchildsemi.com Agenda • • • • Introduction Different types of EMI and their characteristics Regulations and standards for EMI Measurement and sources of EMI • Conducted EMI • Radiated EMI • EMI as integral part of the design flow • Conclusion Company Confidential Page 2 www.fairchildsemi.com Introduction EMI more and more complex • Increasing power density, faster switching, higher currents are causingg more EMI-related issues • Conducted / radiated EMI • Further changes complicating things • New semiconductor switches are faster • New topologies (e.g. Quasi-resonant) • How to achieve hi a “robust” “ b ” design? d i ? • Embed EMI into the design flow from the beginning • What is the goal? • Emit low EMI levels to meet regulations (don’t disturb other applications nearby) Æ EMI compliance • Work properly (be self-compliant) Æ Robustness Company Confidential Page 3 www.fairchildsemi.com Agenda • • • • Introduction Different types of EMI and their characteristics Regulations and standards for EMI Measurement and sources of EMI • Conducted EMI • Radiated EMI • EMI as integral part of the design flow • Conclusion Company Confidential Page 4 www.fairchildsemi.com Different types of EMI and their characteristics “Reduce emission of source” Emitter Galvanic Coupling Capacitive Coupling Inductive Coupling Wave Coupling “Reduce transmission in the system” “Reduce sensitivity of receiver” Receiver Galvanic coupling of signals in the circuit Electric field Magnetic field Radiated wave traveling in the system Typically <30MHz Medium-high frequencies Typically > 30MHz High frequencies Any noisy An nois signal in the system Large dV/dt Large dI/dt Fast switching s itching (RC) filtering Metal shield Magnetic shield Electromagnetic shield Company Confidential Page 5 www.fairchildsemi.com Agenda • • • • Introduction Different types of EMI and their characteristics Regulations and standards for EMI Measurement and sources of EMI • Conducted EMI • Radiated EMI • EMI as integral part of the design flow • Conclusion Company Confidential Page 6 www.fairchildsemi.com Regulations and standard for EMI EN550xx and EN61000 most important • • Two main considerations: • Limit the amount of emission which a given application generates • Define minimum immunity levels a given application must tolerate EN550xx – the “EMI” norm (class A = “consumer”, class B = “industrial”) • • • • • • • • CISPR11, EN55011 for industrial, medical, scientific applications CISPR13, EN55013 for consumer applications CISPR14 EN55014 for CISPR14, f home h appliances, li power tools, t l involving i l i motion ti control t l CISPR15, EN55015 for lighting equipment CISPR22, EN55022 for computing applications CISPR16, EN55016 defines the measurement method Many applications being tested against a “mix” of different norms (e.g. EN55022 for frequencies >150kHz, EN55015 for frequencies <150kHz) EN61000 – the “PFC” norm (equipment classes see next page) • • • • • • • Noise current up to the 40th harmonic of the line frequency ( <= 2.0kHz 2 0kHz (e (e.g. g EU) / 2.4kHz 2 4kHz (e.g. (e g US)) EN61000-3-2 for applications < 16A EN61000-3-12 for applications with 16A…75A EN61000-4-7 defines the measurement and evaluation method EN61000 4 16 for common EN61000-4-16 common-mode mode disturbances up to 150kHz Many further standards exist, dealing with more specialized applications EN61000 specifies maximum harmonic currents, not a power factor Company Confidential Page 7 www.fairchildsemi.com Regulations and standard for EMI Equipment classes for EN61000 Class Equipment Power Comment A 3phase equipment, household appliances, tools dimmers for incandescent lamps, tools, lamps audio equipment, everything not B, C or D > 75W Limit values are defined as absolute values B Portable tools, tools Arc welding equipment > 75W Limit values are defined as absolute values > 25W Limit values defined as relative values to first harmonic C Lighting C Lighting < 25W Limit values defined only for 3rd and 5th harmonic, relative to first harmonic D Personal Computer, Monitor, Television 75W 600W Limit values relative per input power Company Confidential Page 8 www.fairchildsemi.com The power factor Simulation results • • • Simulation shows input and bus cap voltage, and current spikes in the input High dI/dt illustrates significant harmonic content Simulation below is 100W class A SMPS, SMPS would require a (active) PFC • EN61000 considers harmonics to 2kHz/2.4kHz – this would be a pretty large filter if realized with passive components • Attenuation of this filters’ components p for higher g frequencies q (conducted ( EMI)) would be low, due to potentially high parasitic capacitance, and it may not help with CM noise at all Limit values for EN61000 class D Company Confidential Page 9 www.fairchildsemi.com Agenda • • • • Introduction Different types of EMI and their characteristics Regulations and standards for EMI Measurement and sources of EMI • Conducted EMI • Radiated EMI • EMI as integral part of the design flow • Conclusion Company Confidential Page 10 www.fairchildsemi.com Measurement and sources of EMI Conducted EMI test setup Line Impedance Stabilizer Network (“LISN”): - Defined impedance for noise voltage measurement - Blocking the noise coming from the grid Company Confidential Page 11 www.fairchildsemi.com Measurement and sources of EMI Conducted EMI limits Vertical: Amplitude in dbuV Horizontal: Frequency in MHz Solid blue line: EN55011/22 limits for average Solid red line: EN55022 limits for quasipeak Red spectrum line: quasipeak measurement values Black spectrum line: average measurement values Frequency Limit (dbuV) Limit (V) Comment 9kHz ... 50kHz 110 316mV EN55011 Quasipeak 50kHz ... 150kHz 90 ... 80 32mV ... 10mV EN55011 Quasipeak EN55022 B, B Quasi-peak; Quasi peak; linearly falling 66 ... 56 2mV ... 0.63mV with log (frequency) 150kHz ... 500kHz EN55022 B, Average; linearly falling with 56 ... 46 0.63mV ... 0.2mV log (frequency) 56 630uV EN55022 B, Quasi-peak 0.5MHz ... 5MHz 46 200uV EN55022 B, Average 60 1mV EN55022 B, Quasi-peak 5MHz ... 30MHz 50 316uV EN55022 B, Average Company Confidential Page 12 Frequency range Bandwidth (-6dB) 9kHz ... 150kHz 200 Hz 150kHz ... 30MHz 9 kHz 30MHz ... 1GHz 120kHz www.fairchildsemi.com Conducted EMI Differential and common mode noise • • • In most cases, two different noise voltages will appear at nodes L and N • Separate into differential (“DM”) and common mode (“CM”) noise • Different filtering required for both noise types! Differential mode noise appears out of phase at the nodes • Noise current flows in a loop between L and N ((“1”) 1 ) Common mode noise appears in phase at both nodes • Noise current flows via ground and back through the lines (“2”) L DM noise current 1 N 2 Ground CM noise current Company Confidential Page 13 Parasitic Coupling www.fairchildsemi.com Measurement and sources of EMI Conducted EMI as result of switching • The main switching action will cause a current flow into / out of the bulk cap, at the main switching frequency • This current flow causes a noise voltage to appear at the input • Typical values are ESRmax = 1.9Ω, ESLtyp = 20nH • Impedance p minimum is ESR,, will increase at high g frequencies q Æ EMI is primarily a result from parasitic elements in the circuit Company Confidential Page 14 www.fairchildsemi.com Conducted EMI Different filter types Filter type Balanced Unbalanced Pi filter 18 db / oct 60 db / dec T filter 18 db / oct 60 db / dec L filter filt 12 db / oct 40 db / dec (Calculation of component values is explained later) Company Confidential Page 15 www.fairchildsemi.com Conducted EMI Common mode vs differential mode • For common mode noise, the line to line capacitors do not help • Only y the inductors contribute (but ( typically yp y they y are too small)) • Introduce a common mode choke • Designed for (large) leakage inductance to provide DM filter function Choke (with leakage inductance) Line to line cap Example of a 200W power supply input stage with a two-stage CM choke Company Confidential Page 16 www.fairchildsemi.com Conducted EMI Calculation of the filter components Design impedance Input data Line frequency Minimal RMS voltage Maximum RMS load current Lowest switching frequency fLine Vmin Imax fswmin Attenuation Determine required attenuation level pper frequency q y from simulation or measurement Calculate the component values Filter topology Determine suitable filter topology and cutoff frequency so attenuation ggoals are met with a margin g of 6...10dB (but fcut > 10* fLine) Company Confidential Page 17 www.fairchildsemi.com Conducted EMI Simulation and results • Simulation for compliance: Noise generation and filter attenuation are mostlyy determined byy pparasitic elements in the circuit • Noise generation: Leakage inductance, ESR, ESL, capacitive coupling (to ground) • Attenuation: Core frequency response, capacitive coupling • Most simulators allow to set parasitics for all passive components • Using a behavioural model for the noise (current) source is a good approximation • Simulation for function and robustness: Very complex – better to design accordingly, test a prototype, implement fixes in final circuit Company Confidential Page 18 www.fairchildsemi.com Conducted EMI Example values for parasitics Inductor Parallel capacitance e.g. g 50pF p for 1mH Capacitor Series resistance e.g. g 1.9 Ohm for 100uF Series inductance e.g. 20nH for 100uF Transformer Leakage inductance e.g. 10uH for 200uH (prim) Parasitic capacitance e g 50pF for EF25 e.g. CM choke Leakage inductance e.g. 300uH for 10mH P Parasitic i i capacitance i e.g. 100pF for 10mH Company Confidential Page 19 www.fairchildsemi.com Conducted EMI Simulation circuit example Bus cap Load ±0.05A 100kHz LISN Input voltage 230V / 50Hz Company Confidential CM filter DM filter (T type) Page 20 Parasitic coupling www.fairchildsemi.com Conducted EMI Simulation results without filter EN55022 limits (quasi-peak) with filter EN55022 limits (quasi-peak) Company Confidential Page 21 www.fairchildsemi.com Agenda • • • • Introduction Different types of EMI and their characteristics Regulations and standards for EMI Measurement and sources of EMI • Conducted EMI • Radiated EMI • EMI as integral part of the design flow • Conclusion Company Confidential Page 22 www.fairchildsemi.com Radiated EMI What generates it? • • Magnetic EMI is caused by changing currents: Vnoise = RM RS + RM *M* dI Current (di/dt) RS Vnoise + Vmeas dt RM • Coupling factor M depends on: • Distance, Di t area andd orientation i t ti off the th disturbing magnetic loops • Magnetic absorption between the loops • Current risetime • Impedance of the receiver Company Confidential Page 23 www.fairchildsemi.com Radiated EMI Main contributions to radiated EMI • • • Avoid high dI/dt – move to softer (slower switching) or zero-current switching • Analyze the current flows at normal behavior of the circuit, circuit and check which elements will only see current flow in one part of the cycle – these elements are very likely to be in a current loop with high dI/dt Reduce the coupling factor M between the magnetic loops • Orientation Oi i off the h current loops l should h ld be b orthogonal, h l not parallel. ll l • The current loop areas should be made as small as possible • Increase the distance between the emitting current loop and the loop picking p g up p the noise (energy ( gy transfer proportional p p to power p of 3)) • Magnetic shielding Make the signal processing nodes in the system as low-impedance as possible • Current-based C b d signal i l transfer f • Add additional resistors to Ground at sensitive • Differential signaling Company Confidential Page 24 “Reduce emission of source” “Reduce transmission in the system system” “Reduce sensitivity of receiver” www.fairchildsemi.com Radiated EMI How to measure radiated EMI Company Confidential Page 25 www.fairchildsemi.com Radiated EMI How to identify “hot spots” • Use a two-channel scope • Connect a (HV) probe to the main switching signal • Connect the H-field probe to a probe amplifier (if necessary) and to the second channel (proper termination required) • Use the main switching signal as a trigger signal • “Wander” around the PCB to identify areas of large emission, then zoom in • Take (static) pictures of the critical field signals to determine q y and quality q y factor ((this can be used to identifyy the frequency elements of the resonant tanks) Company Confidential Page 26 www.fairchildsemi.com Transformers radiating magnetic fields High leakage inductance == leakage field P core hhas the Pot h smallest ll field fi ld (not ( surprising) ii ) Toroid T id with ith exposedd core emits more than it should Company Confidential ER core – better b than h E core (tighter ( i h winding) i di ) Better B tt to t move air i gap to t center leg (may increase AC losses) Page 27 E core – stronger field due to leakage inductance www.fairchildsemi.com Radiated EMI - various issues (incomplete list…..) • • • • • • • • • • Leakage inductance fields External field of air gaps Diode reverse recovery M i l losing Materials l i their h i damping d i Caps becoming inductive Inductors becoming capacitive ((secondaryy side)) chokes picking p g upp magnetic noise Ringing between parallel caps Ringing between parallel rectifiers Transformer shield ringing Company Confidential Page 28 www.fairchildsemi.com Example 1: 70W QR flyback supply 18MHz peak from transformer Company Confidential Page 29 www.fairchildsemi.com Example 1: 70W QR flyback supply Two different diodes in the snubber Yellow: Drain voltage of main MOSFET Blue: Magnetic field at snubber • Fast snubber diode gives faster rise / fall times and lower losses • Slow diode with much larger Qrr shows significant magnetic EMI • Impact can not be seen in the node voltage – need to investigate magnetic field to find out Company Confidential Page 30 www.fairchildsemi.com Example 2: 300W CCM PFC board Strong EMI event at turn-off Yellow: Drain voltage of MOSFET Blue: Magnetic field At MOSFET • • • At Diode Inside inductor Medium EMI spike at the MOSFET, MOSFET high frequency ((~40MHz) 40MHz) indicates ringing between Coss (780pF) and the parasitic inductance of the PCB and package (20nH), well damped, after which the inductor ringing takes over Smaller EMI spike at the (SiC) diode shows ringing at similar frequency, indicating that this is imposed p byy the power p MOSFET ((in this case,, the equivalent q charge g of the diode is 100x smaller so the contribution is too) Long ringing tail of the inductor shows the energy flowing between the inductor and its parasitic capacitance g p) and the tail lasts for 800ns ((high g Q) • Field is strongg ((distributed air gap) • Ringing frequency is ~9MHz, parasitic cap ~20pF (estimated) Æ effective inductance is reduced by 40x at this frequency! (core material) Company Confidential Page 31 www.fairchildsemi.com Example 3: 400W interleaved PFC PCB layout Company Confidential Page 32 www.fairchildsemi.com Example 3: 400W interleaved PFC Main difference between two boards “Prototype” Prototype “Production” Production Æ 10dB difference in magnetic field peak intensity Company Confidential Page 33 www.fairchildsemi.com Example 4: 200W LLC power supply Turn-off of main LLC stage • Small EMI fields around the converter, most at leakage inductor (gapped core) which itself has small leakage • Well-damped Well damped transformer resonance at 22.7MHz • 70pF and 0.7uH leakage • Not visible in the node voltage 100 /di 100ns/div Red: Magnetic field at leakage ind. Pink: Phase node voltage g Company Confidential Page 34 www.fairchildsemi.com Agenda • • • • Introduction Different types of EMI and their characteristics Regulations and standards for EMI Measurement and sources of EMI • Conducted EMI • Radiated EMI • EMI as integral part of the design flow • Conclusion Company Confidential Page 35 www.fairchildsemi.com EMI as part of the design flow Design steps Write the specification • EN550xx • EN61000 • Time for EMI testing • Space for EMI filter Company Confidential Select the topology Calculate the components Topologies with low EMI PFC Page 36 • Consider impedance of EMI filter • Make circuit nodes low impedance (esp. control loop) • Avoid high di/dt and dv/dt www.fairchildsemi.com EMI as part of the design flow Design steps Simulate the design g • Simulate with a LISN model (but without filter) to predict noise • Use behavioural model for the load to save simulation time • Chose filter topology for needed attenuation levels, simulate again • Put realistic values for parasitic elements • Use an impedance analyzer t measure typical to t i l components and put these in Company Confidential Build a pprototype yp • Try to be close to final arrangement of compo components, so the coupling and radiated EMI can be tested • Minimize high-current loop area • Minimize node area with high dv/dt • Leave some space at the input to put a EMI filter Page 37 Test the pprototype yp • After checking the function, perform pre pre-compliance compliance EMI testing to see the “real” conducted noise • Check CM noise on a grounded metal plate (worst case) • Perform first radiated EMI tests to identify critical spots in the circuit • Compare with simulation results and calibrate the models d l www.fairchildsemi.com EMI as part of the design flow Design steps Add the EMI filter • Build the EMI filter into the pprototype yp and perform p full functional test again • Check if EMI filter impedance and possible resonances create any issues • Perform pre-compliance testing again to see if the measured attenuation matches calculation Company Confidential Design the final version Test the final version • Final implementation will • After full functional testing, g the noise “signature” g change p perform ppre-compliance p of conducted DM and CM testing especially and high as well as radiated EMI and low line conditions • (Alternate source) compoover full load range nents used in production • Try out different passive may have different paracomponents (including sitics, so the EMI behaviour different vendors) may change – need to add • Build several prototypes appropriate margins and check if the noise results are repeatable Page 38 www.fairchildsemi.com Agenda • • • • Introduction Different types of EMI and their characteristics Regulations and standards for EMI Measurement and sources of EMI • Conducted EMI • Radiated EMI • EMI as integral part of the design flow • Conclusion Company Confidential Page 39 www.fairchildsemi.com Conclusion • There is no silver bullet! • Switching currents and voltages will generate EMI • Assess implications early in the design cycle, and prepare g cycle y the pproblem is detected, the more • The later in the design expensive it is to fix • Use topologies and control ICs that create less noise to begin with • LLC, C QR Q fl flyback, b k PSR S References: [1] [2] [3] [4] [5] Didier Bozec, David Cullen, Les McCormack, John Dawson, Bryan Flynn: An investigation into the EMC emissions from switched mode power supplies and similar switched electronic load controllers operating at various loading conditions (IEEE Symposium on Electromagnetic Compatibility, Santa Clara CA, August 2004) Bruce Carsten: Application note for H-field probe (http://bcarsten.com) Jonathan Harper: Electromagnetic compatibility design for power supplies (Fairchild Semiconductor power seminar series 2004/2005) Richard Lee Ozenbaugh: EMI filter design (CRC, Nov 2000) Christophe Basso: Switch-Mode Power Supplies SPICE Simulations and Practical Designs“, McGraw-Hill, 2008 Company Confidential Page 40 www.fairchildsemi.com Follo uss on Twitter Follow T itter @ http://twitter.com/fairchildSemi http://t itter com/fairchildSemi View product and company videos @ http://www.fairchildsemi.com/video/index.html Listen to our podcasts @ http://www.fairchildsemi.com/company/media_center/index.html Comment on our blog @ http://engineeringconnections.com/blog/ Company Confidential Page 41 www.fairchildsemi.com