FDS89161
Dual N-Channel PowerTrench® MOSFET
100 V, 2.7 A, 105 mΩ
Features
General Description
„ Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A
This
N-Channel
MOSFET
is
produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
„ Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A
been optimized for
„ High performance trench technology for extremely low rDS(on)
rDS(on), switching performance and
ruggedness.
„ High power and current handling capability in a widely used
surface mount package
Applications
„ 100% UIL Tested
„ Synchronous Rectifier
„ RoHS Compliant
„ Primary Switch For Bridge Topology
D2
D2
D1
D1
G2
S2
G1
5
D2
6
D1
7
D1
S1
Pin 1
D2
8
Q2
Q1
4
G2
3
S2
2
G1
1
S1
SO-8
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Ratings
100
Units
V
VGS
Gate to Source Voltage
±20
V
Drain Current -Continuous
2.7
ID
Parameter
-Pulsed
15
Single Pulse Avalanche Energy
EAS
PD
TJ, TSTG
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
13
31
(Note1a)
Operating and Storage Junction Temperature Range
1.6
-55 to +150
A
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
(Note 1)
4.0
(Note 1a)
78
°C/W
Package Marking and Ordering Information
Device Marking
FDS89161
Device
FDS89161
©2011 Fairchild Semiconductor Corporation
FDS89161 Rev. C2
Package
SO-8
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
www.fairchildsemi.com
FDS89161 Dual N-Channel PowerTrench® MOSFET
June 2011
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
4
V
100
V
67
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 2.7 A
86
105
rDS(on)
Static Drain to Source On Resistance
VGS = 6 V, ID = 2.1 A
120
171
VGS = 10 V, ID = 2.7 A, TJ = 125 °C
144
176
gFS
Forward Transconductance
2
3
-9
VDS = 10 V, ID = 2.7 A
mV/°C
5
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1MHz
158
210
pF
43
58
pF
3
5
pF
Ω
1
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge
VGS = 0 V to 10 V
VGS = 0 V to 5 V
VDD = 50 V, ID = 2.7 A,
VGS = 10 V, RGEN = 6 Ω
Qg(TOT)
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 50 V,
ID = 2.7 A
4.2
10
1.3
10
ns
ns
7.3
15
ns
1.9
10
ns
3
4.1
nC
1.7
2.4
0.8
nC
0.8
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2.7 A
(Note 2)
0.85
1.3
VGS = 0 V, IS = 2 A
(Note 2)
0.82
1.2
34
54
ns
21
34
nC
IF = 2.7 A, di/dt = 100 A/μs
V
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 78°C/W when
mounted on a 1 in2
pad of 2 oz copper
b) 135°C/W when
mounted on a
minimun pad
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25°C, L = 3 mH, IAS = 3 A, VDD = 100 V, VGS = 10 V.
©2011 Fairchild Semiconductor Corporation
FDS89161 Rev. C2
2
www.fairchildsemi.com
FDS89161 Dual N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
15
ID, DRAIN CURRENT (A)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
4
VGS = 10 V
VGS = 7 V
12
9
VGS = 6 V
6
VGS = 5.5 V
3
VGS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
VGS = 5 V
VGS = 5.5 V
3
VGS = 6 V
2
VGS = 7 V
1
0
4
0
3
VDS, DRAIN TO SOURCE VOLTAGE (V)
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75
-50
15
300
TJ = 125 oC
200
100
TJ = 25 oC
IS, REVERSE DRAIN CURRENT (A)
9
TJ = 150 oC
6
TJ = 25 oC
3
TJ = -55 oC
6
7
8
20
10
6
7
8
9
10
VGS = 0 V
1
TJ = 150 oC
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.001
0.0
9
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
©2011 Fairchild Semiconductor Corporation
FDS89161 Rev. C2
5
Figure 4. On-Resistance vs Gate to
Source Voltage
VDS = 5 V
5
4
VGS, GATE TO SOURCE VOLTAGE (V)
12
4
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
400
0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
3
ID = 2.7 A
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On-Resistance
vs Junction Temperature
ID, DRAIN CURRENT (A)
12
500
ID = 2.7 A
VGS = 10 V
1.8
2
9
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.0
0
6
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
15
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDS89161 Dual N-Channel PowerTrench® MOSFET
Typical Characteristics ( N-Channel) TJ = 25°C unless otherwise noted
300
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 25 V
ID = 2.7 A
Ciss
100
CAPACITANCE (pF)
8
VDD = 50 V
6
VDD = 65 V
4
Coss
10
2
f = 1 MHz
VGS = 0 V
0
0
1
2
3
1
0.1
4
1
Figure 7. Gate Charge Characteristics
100
Figure 8. Capacitance vs Drain
to Source Voltage
3
ID, DRAIN CURRENT (A)
3.0
IAS, AVALANCHE CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
2.5
TJ
= 25 oC
2.0
TJ = 100 oC
1.5
VGS = 10 V
2
VGS = 6 V
1
o
RθJA = 78 C/W
TJ = 125 oC
1.0
0.01
0.1
1
0
25
2
50
100
125
150
o
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
20
10
P(PK), PEAK TRANSIENT POWER (W)
700
100 us
1 ms
1
10 ms
0.1
75
TA, Ambient TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
Crss
THIS AREA IS
LIMITED BY rDS(on)
0.01
0.005
0.1
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
RθJA = 135 oC/W
10 s
TA = 25 oC
DC
1
10
100
400
TC = 25 oC
100
10
1
0.5
-4
10
-3
10
-2
10
-1
10
1
2
10
10
3
10
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2011 Fairchild Semiconductor Corporation
FDS89161 Rev. C2
SINGLE PULSE
RθJA = 135 oC/W
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDS89161 Dual N-Channel PowerTrench® MOSFET
Typical Characteristics ( N-Channel) TJ = 25°C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 135 C/W
0.001
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2011 Fairchild Semiconductor Corporation
FDS89161 Rev. C2
5
www.fairchildsemi.com
FDS89161 Dual N-Channel PowerTrench® MOSFET
Typical Characteristics ( N-Channel) TJ = 25°C unless otherwise noted
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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2.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I54
©2011 Fairchild Semiconductor Corporation
FDS89161 Rev. C2
6
www.fairchildsemi.com
FDS89161 Dual N-Channel PowerTrench® MOSFET
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