HMC616LP3 / 616LP3E
v02.0610
Amplifiers - Low Noise - SMT
7
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
Typical Applications
Features
The HMC616LP3(E) is ideal for:
Low Noise Figure: 0.5 dB
• Cellular/3G and LTE/WiMAX/4G
High Gain: 24 dB
• BTS & Infrastructure
High Output IP3: +37 dBm
• Repeaters and Femtocells
Single Supply: +3V to +5V
• Public Safety Radio
50 Ohm Matched Input/Output
• DAB Receivers
16 Lead 3x3mm QFN Package: 9 mm2
Functional Diagram
General Description
The HMC616LP3(E) is a GaAs PHEMT MMIC
Low Noise Amplifier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 175 and 660 MHz. The amplifier
has been optimized to provide 0.5 dB noise figure,
24 dB gain and +37 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HMC616LP3(E) shares
the same package and pinout with the HMC617LP3(E) and HMC618LP3(E) LNAs. The HMC616LP3(E)
can be biased with +3V to +5V and features an
externally adjustable supply current which allows
the designer to tailor the linearity performance of the
LNA for each application. The HMC616LP3(E) offers
improved noise figure versus the previously released
HMC356LP3(E).
Electrical Specifications, TA = +25° C, Rbias = 3.92k Ohms*
Parameter
Vdd = +3V
Min.
Frequency Range
Gain
Typ.
Max.
Min.
175 - 230
20
Vdd = +5V
Typ.
Max.
Min.
230 - 660
22.5
15
Gain Variation Over Temperature
Typ.
Max.
Min.
175 - 230
20
21
15
dB/ °C
10
16
12
14
dB
Output Return Loss
9
10
9
10
dB
8.5
0.8
dB
0.005
0.5
Saturated Output Power (Psat)
0.5
MHz
21
Noise Figure
8
0.8
Units
Input Return Loss
Output Power for 1 dB
Compression (P1dB)
0.5
Max.
230 - 660
24
0.002
0.8
Typ.
0.5
0.8
dB
11
10
15
11
15
14
19
dBm
13
11
15.5
12.5
17.5
15.5
19.5
dBm
37
dBm
Output Third Order Intercept (IP3)
20
Supply Current (Idd)
30
30
45
30
32
45
90
115
90
115
mA
* Rbias resistor sets current, see application circuit herein
7-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC616LP3 / 616LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
Broadband Gain & Return Loss
20
S21
22
10
Vdd= 5V
Vdd= 3V
5
GAIN (dB)
RESPONSE (dB)
15
0
S22
-5
+25C
+85C
- 40C
18
-10
16
-15
-20
S11
-25
14
0.2
0.4
0.6
0.8
1
FREQUENCY (GHz)
1.2
0.2
1.4
Gain vs. Temperature [2]
0.25
0.3
0.35
0.4 0.45 0.5 0.55
FREQUENCY (GHz)
0.6
0.65
0.7
Input Return Loss vs. Temperature [1]
24
0
RETURN LOSS (dB)
22
GAIN (dB)
20
20
+25C
+85C
- 40C
18
16
14
+25C
+85C
- 40C
-5
-10
Amplifiers - Low Noise - SMT
24
25
0.2
7
Gain vs. Temperature [1]
-15
-20
0.25
0.3
0.35
0.4 0.45 0.5 0.55
FREQUENCY (GHz)
0.6
0.65
0.7
Output Return Loss vs. Temperature [1]
0.2
0.25
0.3
0.35
0.4 0.45 0.5 0.55
FREQUENCY (GHz)
0.6
0.65
0.7
Reverse Isolation vs. Temperature [1]
0
0
REVERSE ISOLATION (dB)
RETURN LOSS (dB)
-5
+25C
+85C
- 40C
-5
-10
-15
-10
+25C
+85C
- 40C
-15
-20
-25
-30
-35
-40
-20
0.2
0.25
0.3
0.35
0.4 0.45 0.5 0.55
FREQUENCY (GHz)
0.6
0.65
0.7
0.2
0.25
0.3
0.35
0.4 0.45 0.5 0.55
FREQUENCY (GHz)
0.6
0.65
0.7
[1] Vdd = 5V [2] Vdd = 3V
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7-2
HMC616LP3 / 616LP3E
v02.0610
7
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
Noise Figure vs. Temperature [1]
P1dB vs. Temperature
24
22
Vdd=5V
Vdd=3V
0.8
20
0.7
P1dB (dBm)
NOISE FIGURE (dB)
0.9
+85C
0.6
0.5
0.4
Vdd=5V
18
16
Vdd=3V
14
+25 C
+25 C
+85 C
- 40 C
12
0.3
-40C
0.2
0.2
0.25
0.3
0.35
0.4 0.45 0.5 0.55
FREQUENCY (GHz)
0.6
0.65
10
0.2
0.7
0.25
0.3
0.35
0.4
0.45
0.5
0.55
0.6
0.65
0.7
FREQUENCY (GHz)
Psat vs. Temperature
Output IP3 vs. Temperature
24
Vdd=5V
40
22
36
Vdd=5V
IP3 (dBm)
20
Psat (dBm)
Amplifiers - Low Noise - SMT
1
18
16
14
28
+25 C
+85 C
- 40 C
12
24
0.25
0.3
0.35
0.4 0.45 0.5 0.55
FREQUENCY (GHz)
0.6
0.65
0.2
0.7
0.3
0.4
0.5
0.6
0.7
FREQUENCY (GHz)
Output IP3 and Supply Current vs.
Supply Voltage @ 400 MHz
Output IP3 and Supply Current vs.
Supply Voltage @ 500 MHz
40
140
38
120
38
120
36
100
36
100
34
80
34
80
32
60
32
60
30
40
30
40
28
20
28
20
0
26
26
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
VOLTAGE SUPPLY (V)
IP3 (dBm)
140
2.7
0
3.1
3.5
3.9
4.3
4.7
5.1
5.5
VOLTAGE SUPPLY (V)
[1] Measurement reference plane shown on evaluation PCB drawing.
7-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Idd (mA)
40
Idd (mA)
IP3 (dBm)
+25 C
+85 C
- 40 C
Vdd=3V
10
0.2
32
Vdd=3V
HMC616LP3 / 616LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
40
Pout
Gain
PAE
35
30
25
20
15
10
5
0
40
Pout
Gain
PAE
35
30
25
20
15
10
5
0
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2
-18
-16
-14
INPUT POWER (dBm)
-12
-10
-8
-6
-4
-2
INPUT POWER (dBm)
Power Compression @ 500 MHz [2]
Power Compression @ 500 MHz [1]
45
40
Pout (dBm), GAIN (dB), PAE (%)
45
Pout (dBm), GAIN (dB), PAE (%)
Amplifiers - Low Noise - SMT
45
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
45
Pout
Gain
PAE
35
30
25
20
15
10
5
0
40
Pout
Gain
PAE
35
30
25
20
15
10
5
0
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2
4
-18
-16
-14
INPUT POWER (dBm)
1
24
0.8
22
18
0.4
14
2.7
Noise Figure
3.1
3.5
3.9
4.3
4.7
SUPPLY VOLTAGE (V)
-8
-6
-4
-2
0
5.1
0.2
0
5.5
1
GAIN
P1dB
0.8
20
0.6
18
0.4
16
14
2.7
Noise Figure
3.1
3.5
3.9
4.3
4.7
5.1
0.2
NOISE FIGURE (dB)
0.6
NOISE FIGURE (dB)
20
GAIN (dB) & P1dB (dBm)
GAIN
P1dB
16
-10
Gain, Power & Noise Figure
vs. Supply Voltage @ 500 MHz
24
22
-12
INPUT POWER (dBm)
Gain, Power & Noise Figure
vs. Supply Voltage @ 400 MHz
GAIN (dB) & P1dB (dBm)
7
Power Compression @ 400 MHz [2]
Power Compression @ 400 MHz [1]
0
5.5
SUPPLY VOLTAGE (V)
[1] Vdd = 5V [2] Vdd = 3V
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7-4
HMC616LP3 / 616LP3E
v02.0610
7
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
Gain Low Frequency Tune [1]
Input Return Loss Low Frequency Tune [1]
0
24
RETURN LOSS (dB)
-5
GAIN (dB)
22
Vdd=5V
Vdd=3V
20
18
0.175
0.2
0.225
FREQUENCY (GHz)
0.15
0.25
Output Return Loss Low Frequency Tune [1]
Vdd=5V
Vdd=3V
0.175
0.2
0.225
FREQUENCY (GHz)
0.25
P1dB Low Frequency Tune [1]
0
22
20
-5
Vdd=5V
vdd=3V
P1dB (dBm)
18
-10
-15
16
14
12
Vdd=5V
Vdd=3V
-20
10
-25
0.15
8
0.175
0.2
0.225
FREQUENCY (GHz)
0.25
Output IP3 Low Frequency Tune [1]
0.15
0.2
0.225
FREQUENCY (GHz)
0.25
1
0.9
Vdd=5V
Vdd=3V
NOISE FIGURE (dB)
36
32
28
24
20
16
0.15
0.175
Noise Figure Low Frequency Tune [1] [2]
40
IP3 (dBm)
-15
-25
14
0.15
-10
-20
16
RETURN LOSS (dB)
Amplifiers - Low Noise - SMT
26
Vdd=5V
Vdd=3V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.175
0.2
FREQUENCY (GHz)
0.225
0.25
0.15
0.175
0.2
0.225
FREQUENCY (GHz)
0.25
[1] Rbias = 2kΩ, L1 = 82 nH, L2 = 82 nH [2] Measurement reference plane shown on evaluation PCB drawing.
7-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC616LP3 / 616LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
24
1
38
23
0.9
22
0.8
21
0.7
20
0.6
19
0.5
GAIN (dB)
34
32
30
28
Vdd= 3V
Vdd= 5V
24
22
500
0.4
18
26
Vdd=5V
Vdd=3V
17
0.3
0.2
16
1000
10000
500
NOISE FIGURE (dB)
40
36
IP3 (dBm)
7
Gain, Noise Figure & Rbias @ 400 MHz
1000
Rbias (Ohms)
10000
Rbias(Ohms)
Output IP3 vs. Rbias @ 500 MHz
Gain, Noise Figure & Rbias @ 500 MHz
40
21
0.7
20
0.6
19
0.5
18
0.4
38
36
GAIN (dB)
IP3 (dBm)
32
30
28
26
22
500
Vdd=5V
Vdd=3V
17
Vdd= 3V
Vdd= 5V
24
0.2
16
1000
10000
Rbias (Ohms)
500
0.3
NOISE FIGURE (dB)
34
Amplifiers - Low Noise - SMT
Output IP3 vs. Rbias @ 400 MHz
1000
10000
Rbias(Ohms)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7-6
HMC616LP3 / 616LP3E
v02.0610
Amplifiers - Low Noise - SMT
7
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
Absolute Bias Resistor
Range & Recommended Bias Resistor Values for Idd
Vdd (V)
3V
5V
Rbias (Ω)
Min
Max
1k [1]
Open Circuit
0
Open Circuit
Idd (mA)
Recommended
2.7k
27
3.92k
31
4.7k
33
10k
39
820
73
2k
84
3.92k
91
10k
95
[1] With Vdd = 3V, Rbias < 1k Ohm is not recommended and may result in the LNA becoming conditionally stable.
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+6 V
RF Input Power (RFIN)
(Vdd = +5 Vdc)
+10 dBm
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C)
(derate 8.93 mW/°C above 85 °C)
0.58 W
Thermal Resistance
(channel to ground paddle)
112 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Typical Supply
Current vs. Vdd (Rbias = 3.92kΩ)
Vdd (V)
Idd (mA)
2.7
20
3.0
30
3.3
40
4.5
80
5.0
90
5.5
100
Note: Amplifier will operate over full voltage range shown above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
7-7
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC616LP3 / 616LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
7
Amplifiers - Low Noise - SMT
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE
MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR
SUGGESTED LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC616LP3
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
[1]
HMC616LP3E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
[2]
Package Marking [3]
616
XXXX
616
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7-8
HMC616LP3 / 616LP3E
v02.0610
Amplifiers - Low Noise - SMT
7
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
Pin Descriptions
Function
Description
1, 3 - 5, 7, 9,
10, 12 - 14, 16
Pin Number
N/C
No connection required. These pins may be connected
to RF/DC ground without affecting performance.
2
RFIN
This pin is DC coupled. DC blocking capacitor
required. See application circuit.
6
GND
This pin and ground paddle must
be connected to RF/DC ground.
11
RFOUT
This pin is matched to 50 Ohms.
8
RES
This pin is used to set the DC current of the amplifier by
selection of external bias resistor. See application circuit.
15
Vdd
Power Supply Voltage. Choke inductor and bypass capacitors
are required. See application circuit.
Interface Schematic
Application Circuit
Components for Selected Frequencies
7-9
Tuned Frequency
175 - 230 MHz
230 - 660 MHz
Rbias
2.0k Ohms
3.92k Ohms
L1
82 nH
47 nH
L2
82 nH
51 nH
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC616LP3 / 616LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
7
Amplifiers - Low Noise - SMT
Evaluation PCB
List of Materials for Evaluation PCB 120728
Item
J1, J2
Description
PCB Mount SMA RF Connector
J3, J4
DC Pin
C1
10nF Capacitor, 0402 Pkg.
C2
1000 pF Capacitor, 0603 Pkg.
C3
0.47 µF Capacitor, 0603 Pkg.
C4
100 pF Capacitor, 0402 Pkg.
L1
47 nH Inductor, 0603 Pkg.
L2
51 nH Inductor, 0402 Pkg.
R1 (Rbias)
3.92 kΩ Resistor, 0402 Pkg.
U1
HMC616LP3(E) Amplifier
PCB [2]
120616 Evaluation PCB
[1]
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7 - 10