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HMC816LP4E
v00.1108
Typical Applications
Features
The HMC816LP4E is ideal for:
Low Noise Figure: 0.5 dB
• Cellular/3G and LTE/WiMAX/4G
High Gain: 22 dB
• BTS & Infrastructure
High Output IP3: +37 dBm
• Repeaters and Femtocells
Single Supply: +3V to +5V
• Public Safety Radio
50 Ohm Matched Input/Output
• Multi-Channel Applications
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24 Lead 4x4mm QFN Package: 16 mm2
Functional Diagram
General Description
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The HMC816LP4E is a GaAs pHEMT Dual Channel
Low Noise Amplifier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 230 and 660 MHz. The amplifier
has been optimized to provide 0.5 dB noise figure,
22 dB gain and +37 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HMC816LP4E shares
the same package and pinout with the HMC817LP4E & HMC818LP4E LNAs. The HMC817LP4E can
be biased with +3V to +5V and features an externally
adjustable supply current which allows the designer
to tailor the linearity performance of each channel of
the LNA for each application.
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Amplifiers - Low Noise - SMT
7
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
Electrical Specifications, TA = +25° C,
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Rbias 1, 2 = 10k Ohms*, Vdd = Vdd1, Vdd2 = +5V, Idd = Idd1, Idd2
Parameter
Vdd = +3V
Min.
Frequency Range
Gain
Typ.
Max.
Min.
230 - 450
17
Gain Variation Over Temperature
Vdd = +5V
Typ.
Max.
Min.
450 - 660
21
14
0.001
Min.
19
15
MHz
19
dB
0.007
dB/ °C
0.5
13
17
15
16
dB
Output Return Loss
12
10
13
10
dB
21
dBm
21
dBm
37
dBm
Saturated Output Power (Psat)
10
Output Third Order Intercept (IP3)
Supply Current (Idd)
14
13
16
15
15
14
16.5
16
26
24
34
28
44
24
34
0.9
Units
Noise Figure
10
0.5
Max.
450 - 660
22
0.005
0.9
Typ.
Input Return Loss
Output Power for 1 dB
Compression (P1dB)
0.5
Max.
230 - 450
17
0.002
0.9
Typ.
0.5
19
18
20
18
34
44
68
97
126
68
97
0.9
126
dB
mA
* Rbias sets current, see application circuit herein
7-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC816LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
Broadband Gain & Return Loss
20
S21
22
10
GAIN (dB)
Vdd= 5V
Vdd= 3V
5
0
S22
-5
-20
S11
0.2
0.4
0.6
0.8
1
FREQUENCY (GHz)
14
1.2
Gain vs. Temperature [2]
GAIN (dB)
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+25C
+85C
- 40C
0.25
0.3
0.35
0.4 0.45 0.5 0.55
FREQUENCY (GHz)
0.6
0.65
0.3
0.35
0.4 0.45 0.5 0.55
FREQUENCY (GHz)
0.6
0.65
0.7
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+25C
+85C
- 40C
-10
-15
-20
0.2
0.25
0.3
0.35
0.4 0.45 0.5 0.55
FREQUENCY (GHz)
0.6
0.65
0.7
Reverse Isolation vs. Temperature [1]
0
0
REVERSE ISOLATION (dB)
-5
+25C
+85C
- 40C
-5
-5
0.7
Output Return Loss vs. Temperature [1]
RETURN LOSS (dB)
0.25
0
22
0.2
0.2
1.4
Input Return Loss vs. Temperature [1]
24
14
+25C
+85C
- 40C
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-25
16
18
16
-15
18
20
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-10
RETURN LOSS (dB)
RESPONSE (dB)
15
Amplifiers - Low Noise - SMT
24
25
20
7
Gain vs. Temperature [1]
-10
-15
-10
+25C
+85C
- 40C
-15
-20
-25
-30
-35
-40
-20
0.2
0.25
0.3
0.35
0.4 0.45 0.5 0.55
FREQUENCY (GHz)
0.6
0.65
0.7
0.2
0.25
0.3
0.35
0.4 0.45 0.5 0.55
FREQUENCY (GHz)
0.6
0.65
0.7
[1] Vdd = 5V [2] Vdd = 3V
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7-2
HMC816LP4E
v00.1108
7
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
Noise Figure vs. Temperature [1]
P1dB vs. Temperature
24
22
+85C
P1dB (dBm)
20
0.6
+25 C
0.4
-40C
0.3
0.4
0.5
0.6
0.2
0.4
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IP3 (dBm)
Vdd=3V
+25 C
+85 C
- 40 C
0.25
0.3
0.35
0.4 0.45 0.5 0.55
FREQUENCY (GHz)
0.6
0.65
0.45
0.5
0.55
0.6
0.65
0.7
Vdd=5V
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35
30
25
+25 C
+85 C
- 40 C
Vdd=3V
20
0.2
0.7
Output IP3 and Supply Current vs.
Supply Voltage @ 400 MHz
0.3
0.4
0.5
0.6
0.7
FREQUENCY (GHz)
Output IP3 and Supply Current vs.
Supply Voltage @ 500 MHz
144
43
140
36
126
40
120
34
108
37
100
32
90
34
80
30
72
28
54
31
60
26
36
28
40
24
18
25
20
0
22
22
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
VOLTAGE SUPPLY (V)
2.7
0
3.1
3.5
3.9
4.3
4.7
5.1
5.5
VOLTAGE SUPPLY (V)
[1] Measurement reference plane shown on evaluation PCB drawing.
7-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Idd (mA)
38
Idd (mA)
IP3 (dBm)
0.35
40
Vdd=5V
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10
0.3
45
22
12
0.25
Output IP3 vs. Temperature
24
14
+25 C
+85 C
- 40 C
FREQUENCY (GHz)
Psat vs. Temperature
16
Vdd=3V
10
0.2
0.7
FREQUENCY (GHz)
18
16
12
0
20
18
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Vdd=5V
Vdd=3V
0.2
0.2
Vdd=5V
14
IP3 (dBm)
NOISE FIGURE (dB)
0.8
Psat (dBm)
Amplifiers - Low Noise - SMT
1
HMC816LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
Pout
Gain
PAE
35
30
25
20
10
5
0
30
25
20
15
10
5
0
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2
-18
-16
-14
-12
-10
-8
-6
-4
-2
INPUT POWER (dBm)
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INPUT POWER (dBm)
Power Compression @ 500 MHz [2]
Power Compression @ 500 MHz [1]
45
50
40
35
Pout
Gain
PAE
30
25
20
15
10
5
0
-18
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Pout (dBm), GAIN (dB), PAE (%)
Pout
Gain
PAE
35
TE
15
40
Amplifiers - Low Noise - SMT
40
Pout (dBm), GAIN (dB), PAE (%)
45
-16
-14
-12
-10
-8
-6
-4
-2
0
2
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
45
45
40
35
25
20
15
10
5
0
4
-18
-16
-14
-12
Gain
P1dB
1
24
0.8
22
18
0.4
16
14
2.7
Noise Figure
3.1
3.5
3.9
4.3
4.7
SUPPLY VOLTAGE (V)
-8
-6
-4
-2
0
2
5.1
0.2
0
5.5
1
Gain
P1dB
0.8
20
0.6
18
0.4
16
14
2.7
Noise Figure
3.1
3.5
3.9
4.3
4.7
5.1
0.2
NOISE FIGURE (dB)
0.6
NOISE FIGURE (dB)
20
GAIN (dB) & P1dB (dBm)
24
22
-10
INPUT POWER (dBm)
Gain, Power & Noise Figure
vs. Supply Voltage @ 500 MHz
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Gain, Power & Noise Figure
vs. Supply Voltage @ 400 MHz
Pout
Gain
PAE
30
INPUT POWER (dBm)
GAIN (dB) & P1dB (dBm)
7
Power Compression @ 400 MHz [2]
Power Compression @ 400 MHz [1]
0
5.5
SUPPLY VOLTAGE (V)
[1] Vdd = 5V [2] Vdd = 3V
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7-4
HMC816LP4E
v00.1108
Output IP3 vs. Rbias @ 500 MHz
40
38
38
36
36
34
34
IP3 (dBm)
40
32
30
26
Vdd= 3V
Vdd= 5V
24
22
500
1000
22
500
10000
1000
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Magnitude Balance [1]
0
1
RFIN1 TO RFOUT2
RFIN2 TO RFOUT1
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-10
0.3
0.4
0.5
0.6
0.7
0.5
0
-0.5
-1
0.2
0.3
FREQUENCY (GHz)
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2
Vdd (V)
1
0.5
0.6
0.7
3V
Rbias Ω
5V
-1
Idd (mA)
Min
Max
Recommended
4.7k
Open
circuit
10k
34
820
65
0
-2
0.2
0.4
FREQUENCY (GHz)
Absolute Bias Register for Idd
Range & Recommended Bias Resistor
Phase Balance [1]
PHASE BALANCE (degrees)
10000
Rbias (Ohms)
Cross Channel Isolation [1]
-40
0.2
Vdd= 3V
Vdd= 5V
24
Rbias (Ohms)
-30
30
28
26
-20
32
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28
AMPLITUDE BALANCE (dB)
IP3 (dBm)
Output IP3 vs. Rbias @ 400 MHz
ISOLATION (dB)
Amplifiers - Low Noise - SMT
7
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
0
Open
circuit
2k
80
3.92k
90
10k
97
With Vdd = 3V Rbias <4.7k is not recommended and may result in
LNA becoming conditionally unstable.
0.3
0.4
0.5
0.6
0.7
FREQUENCY (GHz)
[1] Vdd = 5V
7-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC816LP4E
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
Typical Supply
Current vs. Vdd (Rbias = 10kΩ)
Absolute Maximum Ratings
+6 V
RF Input Power (RFIN1, RFIN2)
(Vdd = +5 Vdc)
+10 dBm
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C)
(derate 17.86 mW/°C above 85 °C)
1.16 W
Thermal Resistance
(channel to ground paddle)
56 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Vdd1, Vdd2 (V)
Idd1, Idd2 (mA)
2.7
24
3.0
34
3.3
44
4.5
82
5.0
97
5.5
110
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Drain Bias Voltage (Vdd1, Vdd2)
Note: Amplifier will operate over full voltage range shown above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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Outline Drawing
7
Amplifiers - Low Noise - SMT
v00.1108
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
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2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE
MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR
SUGGESTED LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
HMC816LP4E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL Rating
MSL1
[2]
Package Marking [1]
H816
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reflow temperature of 260 °C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7-6
HMC816LP4E
v00.1108
Pin Descriptions
Function
Description
1, 6
RFIN1, RFIN2
This pins are DC coupled. An off-chip DC blocking capacitor is required.
2, 5, 7, 12, 14,
17, 19, 24
GND
These pins and package bottom must be connected to RF/DC ground.
3, 4, 8 - 10,
21 - 23
N/C
No connection required. These pins may be connected
to RF/DC ground without affecting performance.
18, 13
RFOUT1,
RFOUT2
These pins are matched to 50 Ohms.
15, 16
RES1, RES2
These pins are used to set the DC current of each amplifier via external
bias resistor. See application circuit.
20, 11
Vdd1, Vdd2
Power Supply Voltages for each amplifier. Choke inductor and bypass
capacitors are required. See application circuit.
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Application Circuit
Interface Schematic
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Pin Number
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Amplifiers - Low Noise - SMT
7
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
7-7
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC816LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
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List of Materials for Evaluation PCB 123191
Item
PCB Mount SMA RF Connector
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J1 - J4
Description
J5, J6
2mm Vertical Molex 8pos Connector
C1, C2
100 pF Capacitor, 0402 Pkg.
C5, C6
1000 pF Capacitor, 0603 Pkg.
C9, C10
0.47 µF Capacitor, 0402 Pkg.
C11, C12
10k pF Capacitor, 0402 Pkg.
R3, R4
0 Ohm Resistor, 0402 Pkg.
R5, R6 (Rbias1,2)
10k Ohm Resistor, 0402 Pkg.
L1, L2
51 nH Inductor, 0402 Pkg.
L3, L4
47 nH Inductor, 0603 Pkg.
U1
HMC816LP4E Amplifier
PCB [2]
122725 Evaluation PCB
Amplifiers - Low Noise - SMT
7
Evaluation PCB
[1]
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon 25FR
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7-8