SOOS032−D3908, FEBRUARY 1992
•
•
•
•
•
•
AC Signal Input
Gallium-Arsenide Diode Infrared Source
Source Is Optically Coupled to Silicon
N-P-N Phototransistor
•
•
Choice of One, Two, or Four Channels
Choice of Three Current-Transfer Ratios
High-Voltage Electrical Isolation . . . 7.5 kV
Peak (5.3 kV rms)
Plastic Dual-In-Line Packages
UL Listed − File No. E65085
description
These optocouplers consist of two gallium-arsenide light-emitting diodes connected in a reverse-parallel
configuration for ac-input applications and a silicon n-p-n phototransistor per channel. The TIL920 has one
channel in a 4-pin package, the TIL921 has two channels in an 8-pin package, and the TIL922 has four channels
in a 16-pin package. The standard devices, TIL920, TIL921, and TIL922, are tested for a current-transfer ratio
of 20% minimum. Devices selected for a current-transfer ratio of 50% and 100% minimum are designated with
the suffix A and B respectively.
mechanical data
4,80 (0.189)
4,19 (0.165)
TIL920
1
10,2 (0.400)
9,2 (0.362)
TIL921
1
21,1 (0.831)
18,5 (0.728)
TIL922
C
L
C
L
1
7,62 (0.300) T.P.
(see Note A)
2,79 (0.110)
2,29 (0.090)
(see Note A)
6,76 (0.266)
6,25 (0.246)
3,81 (0.150)
3,30 (0.130)
1,27 (0.050)
1,12 (0.044)
5,08 (0.200) MAX
Seating Plane
105°
90°
3,81 (0.150)
2,54 (0.100)
0,36 (0.014)
0,20 (0.008)
0,51 (0.020) MIN
0,58 (0.023)
0,43 (0.017)
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES
NOTE A: Each pin centerline is located 0,25 (0.010) of its true longitudinal position.
Copyright  1992, Texas Instruments Incorporated
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SOOS032−D3908, FEBRUARY 1992
schematic diagrams
TIL920
(TOP VIEW)
A/K
K/A
TIL921
(TOP VIEW)
4
1
3
2
C
E
1 A/K
1 K/A
2 A/K
2 K/A
TIL922
(TOP VIEW)
8
1
7
2
6
3
5
4
1C
1E
2C
2E
1A/K
1K/A
2A/K
2K/A
3A/K
3K/A
4A/K
4K/A
16
1
15
2
14
3
13
4
12
5
11
6
10
7
9
8
1C
1E
2C
2E
3C
3E
4C
4E
absolute maximum ratings, TA = 25°C (unless otherwise noted)
Input-to-output voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±7.5 kV peak or dc (± 5.3 kV rms)
Collector-emitter voltage (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V
Emitter-collector voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Input diode continuous forward current at (or below) 25°C free-air temperature (see Note 3) . . . . . . ± 50 mA
Continuous power dissipation at (or below) 25°C free-air temperature:
Phototransistor (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mW
Input diode plus phototransistor per channel (see Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55°C to 100°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55°C to 125°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
NOTES: 1.
2.
3.
4.
5.
This rating applies for sine-wave operation at 50 or 60 Hz. Service capability is verified by testing in accordance with UL requirements.
This value applies when the base-emitter diode is open circuited.
Derate linearly to 100°C free-air temperature at the rate of 0.67 mA/°C.
Derate linearly to 100°C free-air temperature at the rate of 2 mW/°C.
Derate linearly to 100°C free-air temperature at the rate of 2.67 mW/°C.
electrical characteristics, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
V(BR)CEO
V(BR)ECO
Collector-emitter breakdown voltage
IC(off)
CTR†
Emitter-collector breakdown voltage
IC = 0.5 mA,
IC = 100 µA,
IF = 0
IF = 0
Off-state collector current
VCE = 24 V,
IF = 0
Current
TIL920, TIL921, TIL922
transfer
TIL920A, TIL921A, TIL922A
ratio
TIL920B, TIL921B, TIL922B
VF†
VCE(sat)†
Input diode static forward voltage
Cio
Input-to-output capacitance
rio
Input-to-output internal resistance
Collector-emitter saturation voltage
MIN
TYP
MAX
UNIT
35
V
7
V
100
nA
1.4
V
20%
IF = 5 mA,
VCE = 5 V
50%
100%
IF = 20 mA
IF = 5 mA,
Vin-out = 0,
Vin-out = ±1 kV,
IC = 1 mA
f = 1 MHz, See Note 6
See Note 6
0.4
1
1011
V
pF
Ω
IC(on)1
On-state collector current symmetry ratio
VCE = 5 V,
IF = 5 mA
1
3
IC(on)2
(see Note 7)
† These parameters apply to either direction of the input current.
NOTES: 6. These parameters are measured between all input-diode leads shorted together and all phototransistor leads shorted together.
7. The higher of the two values of IC(on) generated by the two diodes is taken as IC(on)1.
2
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switching characteristics, TA = 25°C
PARAMETER†
tr
tf
TEST CONDITIONS
Rise time
TYP
UNIT
6
µs
VCC = 5 V, IC(on) = 2 mA, RL = 100 Ω, See Figure 1
Fall time
6
† These parameters apply to either direction of the input current.
PARAMETER MEASUREMENT INFORMATION
Adjust amplitude of input pulse for IC(on) = 2 mA
Input
0
47 Ω
Input
(see Note A)
tf
RL = 100 Ω
+
tf
tr
Output
(see Note B)
tr
90%
Output
90%
90%
90%
VCC = 5 V
10%
10%
−
10%
10%
0
TEST CIRCUIT
VOLTAGE WAVEFORMS
NOTES: A. The input waveform is supplied by a generator with the following characteristics: Zo = 50 Ω, tr ≤ 15 ns, duty cycle = 1%.
B. The output waveform is monitored on an oscilloscope with the following characteristics: tr ≤ 12 ns, Ri ≥ 1 MΩ, Ci ≤ 20 pF.
Figure 1. Switching Times
TYPICAL CHARACTERISTICS
INPUT CURRENT
vs
INPUT VOLTAGE
100
80
TA = 25°C
I F − Input Current − mA
60
40
20
0
−20
−40
−60
−80
−100
−1.6 −1.2
−0.8 −0.4
0
0.4
0.8
1.2
1.6
VF − Input Voltage − V
Figure 2
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SOOS032−D3908, FEBRUARY 1992
TYPICAL CHARACTERISTICS
COLLECTOR CURRENT
vs
COLLECTOR-EMITTER VOLTAGE
100
20
TA = 25°C
IF = 12 mA
16
14
IF = 10 mA
12
IF = 8 mA
10
8
IF = 5 mA
6
4
IF = 2 mA
2
0
0
1
VCE = 5 V
Normalized to IF = 5 mA
TA = 25°C
40
I C(on) − Normalized Collector Current
18
I C − Collector Current − mA
NORMALIZED ON-STATE COLLECTOR
CURRENT
vs
INPUT-DIODE FORWARD CURRENT
7
8
3
4
5
6
VCE − Collector-Emitter Voltage − V
2
9
10
10
4
1
0.4
0.1
0.04
0.01
0.004
0.001
0.1
0.4
1
Figure 3
VCE = 5 V
IF = 5 mA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
−50
100
75
−25
0
25
50
TA − Free-Air Temperature − °C
100
0.40
0.35
IF = 5 mA
IC = 1 mA
0.30
0.25
0.20
0.15
0.10
0.05
0
−75
−50
Figure 5
4
40
TYPICAL COLLECTOR-EMITTER SATURATION VOLTA
vs
FREE-AIR TEMPERATURE
VCE(sat) − Clooector-Emitter Saturation Voltage − V
Collector Current Relative to Value at TA = 25°C
1.4
0.4
−75
10
Figure 4
RELATIVE ON-STATE COLLECTOR CURRENT
vs
FREE-AIR TEMPERATURE
1.3
4
IF − Input Current − mA
−25
0
25
50
75
TA − Free-Air Temperature − °C
Figure 6
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