FDME905PT
P-Channel PowerTrench® MOSFET
-12 V, -8 A, 22 mΩ
Features
General Description
„ Max rDS(on) = 22 mΩ at VGS = -4.5 V, ID = -8 A
This device is designed specifically for battery charging or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance.
„ Max rDS(on) = 26 mΩ at VGS = -2.5 V, ID = -7.3 A
„ Max rDS(on) = 97 mΩ at VGS = -1.8 V, ID = -3.8 A
The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for its physical size and is well suited to switching
and linear mode applications.
„ Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
„ Free from halogenated compounds and antimony oxides
„ RoHS Compliant
G
Bottom Drain Contact
D
Pin 1
D
S
D
1
6
D
D
2
5
D
G
3
4
S
S
D
D
TOP
BOTTOM
MicroFET 1.6x1.6 Thin
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
ID
-Continuous
TA = 25 °C
(Note 1a)
-Pulsed
PD
TJ, TSTG
Ratings
-12
Units
V
±8
V
-8
-30
Power Dissipation
TA = 25 °C
(Note 1a)
2.1
Power Dissipation
TA = 25 °C
(Note 1b)
0.7
Operating and Storage Junction Temperature Range
-55 to +150
A
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
4.5
60
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
175
°C/W
Package Marking and Ordering Information
Device Marking
E95
Device
FDME905PT
©2011 Fairchild Semiconductor Corporation
FDME905PT Rev.C4
Package
MicroFET 1.6x1.6 Thin
1
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
www.fairchildsemi.com
FDME905PT P-Channel PowerTrench® MOSFET
October 2013
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = -250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = -9.6 V, VGS = 0 V
IGSS
Gate to Source Leakage Current
VGS = ±8 V, VDS = 0 V
-12
V
-8.7
mV/°C
-1
μA
±100
nA
-1.0
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250 μA, referenced to 25 °C
2.5
rDS(on)
Drain to Source On Resistance
gFS
Forward Transconductance
-0.4
-0.7
mV/°C
VGS = -4.5 V, ID = -8 A
18
VGS = -2.5 V, ID = -7.3 A
22
22
26
VGS = -1.8 V, ID = -3.8 A
28
97
VGS = -4.5 V, ID = -8 A, TJ = 125 °C
23
32
VDS = -5 V, ID = -8 A
38
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -6 V, VGS = 0 V,
f = 1 MHz
1740
2315
pF
350
525
pF
311
465
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
VDD = -6 V, ID = -8 A,
VGS = -4.5 V, RGEN = 6 Ω
9.5
19
ns
8
16
ns
ns
td(off)
Turn-Off Delay Time
90
144
tf
Fall Time
42
67
ns
Qg
Total Gate Charge
14
20
nC
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = -6 V, ID = -8 A,
VGS = -4.5 V
2.4
nC
3
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -8 A
(Note 2)
-0.8
-1.2
VGS = 0 V, IS = -1.8 A
(Note 2)
-0.7
-1.2
IF = -8 A, di/dt = 100 A/μs
V
17
31
ns
4.5
10
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 60 °C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 175 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
©2011 Fairchild Semiconductor Corporation
FDME905PT Rev.C4
2
www.fairchildsemi.com
FDME905PT P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
3
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
30
-ID, DRAIN CURRENT (A)
VGS = -4.5 V
VGS = -3 V
20
VGS = -2.5 V
VGS = -1.8 V
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0
0.5
1.0
2
VGS = -1.8 V
VGS = -2.5 V
1
VGS = -3 V
VGS = -4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
1.5
10
20
-ID, DRAIN CURRENT (A)
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
80
ID = -8 A
VGS = -4.5 V
rDS(on), DRAIN TO
1.3
1.2
1.1
1.0
0.9
0.8
-75
-50
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
1.4
60
ID = -8 A
40
TJ = 125 oC
20
TJ = 25 oC
0
1.0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
50
-IS, REVERSE DRAIN CURRENT (A)
30
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
-ID, DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VDS = -5 V
20
TJ = 150 oC
10
TJ = 25 oC
TJ = -55 oC
0
0.0
0.5
1.0
1.5
VGS = 0 V
10
1
TJ = 25 oC
0.1
0.01
0.001
0.0
2.0
TJ = 150 oC
TJ = -55 oC
0.2
0.4
0.6
0.8
1.0
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDME905PT Rev.C4
3
1.2
www.fairchildsemi.com
FDME905PT P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
3000
ID = -8 A
Ciss
VDD = -5 V
CAPACITANCE (pF)
-VGS, GATE TO SOURCE VOLTAGE (V)
4.5
3.0
VDD = -6 V
VDD = -7 V
1.5
1000
Coss
Crss
f = 1 MHz
VGS = 0 V
0.0
0
4
8
12
100
0.1
16
1
Figure 7. Gate Charge Characteristics
20
Figure 8. Capacitance vs Drain
to Source Voltage
100
300
P(PK), PEAK TRANSIENT POWER (W)
-ID, DRAIN CURRENT (A)
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
100 μs
10
1 ms
1
10 ms
THIS AREA IS
LIMITED BY rDS(on)
0.1
100 ms
1s
10 s
DC
SINGLE PULSE
TJ = MAX RATED
RθJA = 175 oC/W
TA = 25 oC
0.01
0.001
0.1
1
10
SINGLE PULSE
o
RθJA = 175 C/W
100
o
TA = 25 C
10
1
0.5 -4
10
30
-3
10
-2
-1
10
10
1
100
10
1000
t, PULSE WIDTH (s)
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe
Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 175 C/W
0.001
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 11. Junction-to-Ambient Transient Thermal Response Curve
©2011 Fairchild Semiconductor Corporation
FDME905PT Rev.C4
4
www.fairchildsemi.com
FDME905PT P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDME905PT P-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
©2011 Fairchild Semiconductor Corporation
FDME905PT Rev.C4
5
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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2.
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Semiconductor. The datasheet is for reference information only.
Rev. I66
©2011 Fairchild Semiconductor Corporation
FDME905PT Rev.C4
6
www.fairchildsemi.com
FDME905PT P-Channel PowerTrench® MOSFET
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