NTD6416ANL, NVD6416ANL
N-Channel Power MOSFET
100 V, 19 A, 74 mW
Features
•
•
•
•
•
Low RDS(on)
High Current Capability
100% Avalanche Tested
NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
RDS(on) MAX
ID MAX
100 V
74 mW @ 10 V
19 A
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage − Continuous
VGS
±20
V
ID
19
A
Steady
State
Power Dissipation
Steady
State
TC = 25°C
TC = 100°C
4
13
PD
71
W
IDM
70
A
TJ, Tstg
−55 to
+175
°C
IS
19
A
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 Vdc, VGS = 10 Vdc,
IL(pk) = 18.2 A, L = 0.3 mH, RG = 25 W)
EAS
50
mJ
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
TL
Pulsed Drain Current
TC = 25°C
tp = 10 ms
Operating and Storage Temperature Range
Source Current (Body Diode)
S
4
2
3
DPAK
CASE 369AA
STYLE 2
3
IPAK
CASE 369D
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENTS
°C
260
4 Drain
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
Gate
THERMAL RESISTANCE RATINGS
Parameter
1
1 2
Symbol
Max
Unit
Junction−to−Case (Drain) − Steady State
RqJC
2.1
°C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
47
4 Drain
2
Drain
AYWW
64
16ANLG
Continuous Drain
Current
G
AYWW
64
16ANLG
Parameter
3
Source
3
Source
2
Drain
A
Y
WW
6416ANL
G
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
1
Gate
= Assembly Location*
= Year
= Work Week
= Device Code
= Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 5
1
Publication Order Number:
NTD6416ANL/D
NTD6416ANL, NVD6416ANL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
100
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
V
120
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
VGS = 0 V,
VDS = 100 V
TJ = 25°C
mV/°C
1.0
TJ = 125°C
mA
10
±100
nA
2.2
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On−Resistance
RDS(on)
Forward Transconductance
1.0
5.4
gFS
mV/°C
VGS = 4.5 V, ID = 10 A
70
80
VGS = 10 V, ID = 10 A
62
74
VGS = 10 V, ID = 19 A
68
74
VDS = 5 V, ID = 10 A
18
mW
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
700
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
1000
pF
40
nC
110
CRSS
50
Total Gate Charge
QG(TOT)
25
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
9.6
Plateau Voltage
VGP
3.2
V
Gate Resistance
RG
2.4
W
td(on)
7.0
ns
0.7
VGS = 10 V, VDS = 80 V, ID = 19 A
2.4
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = 10 V, VDD = 80 V,
ID = 19 A, RG = 6.1 W
tf
16
35
40
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V, IS = 19 A
TJ = 25°C
0.9
TJ = 125°C
0.72
Reverse Recovery Time
tRR
50
Charge Time
Ta
38
Discharge Time
Tb
Reverse Recovery Charge
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 19 A
QRR
1.2
V
ns
14
112
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTD6416ANL, NVD6416ANL
TYPICAL CHARACTERISTICS
40
40
VDS w 10 V
10 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
TJ = 25°C
4.5 V
30
3.6 V
20
3.2 V
10
3.0 V
30
20
TJ = 125°C
10
TJ = 25°C
2.8 V
TJ = −55°C
VGS = 2.4 V
0
0
0
1
2
3
4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
5
0
1
2
3
4
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID = 19 A
TJ = 25°C
0.1
0.09
0.08
0.07
0.06
2
4
6
8
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.11
TJ = 25°C
0.075
VGS = 4.5 V
0.070
0.065
VGS = 10 V
0.060
0.055
0.050
2
6
10
18
14
ID, DRAIN CURRENT (A)
Figure 3. On−Region versus Gate−To−Source
Voltage
Figure 4. On−Region versus Drain Current and
Gate−To−Source Voltage
10000
3
2.5
0.080
VGS, GATE−TO−SOURCE VOLTAGE (V)
VGS = 0 V
VGS = 10 V
ID = 19 A
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
5
2
1.5
TJ = 150°C
1000
TJ = 125°C
100
1
0.5
−50
−25
0
25
50
75
100
125
150
175
10
10
20
30
40
50
60
70
80
90
TJ, JUNCTION TEMPERTURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drian−to−Source Leakage Current
versus Voltage
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3
100
NTD6416ANL, NVD6416ANL
TYPICAL CHARACTERISTICS
1000
800
Ciss
600
400
200
Coss
Crss
0
0
10
20
30
40
50
60
70
80
90
100
QT
8
80
VGS
6
4 Qgs
2
VDS = 80 V
ID = 19 A
TJ = 25°C
0
10
15
20
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
20
0
25
20
IS, SOURCE CURRENT (A)
VDS = 80 V
ID = 19 A
VGS = 10 V
td(off)
100
t, TIME (ns)
5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
tf
tr
10
td(on)
1
10
TJ = 25°C
VGS = 0 V
15
10
5
0
0.5
1
100
0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
50
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
100
10 mS
ID, DRAIN CURRENT (A)
40
Qgd
0
100
60
VDS
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ = 25°C
VGS = 0 V
1200
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
1400
10
1
VGS = 10 V
SINGLE PULSE
TC = 25°C
0.1
100 mS
1 mS
10 mS
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.001
0.1
1
10
100
1000
ID = 18.2 A
40
30
20
10
0
25
50
75
100
125
150
175
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Resistive Switching Time Variation
versus Gate Resistance
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4
NTD6416ANL, NVD6416ANL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
RqJA (°C/W)
10
1
20%
10%
5%
2%
1%
P(pk)
0.1
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
RqJA(t) = r(t) RqJA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJA(t)
10
100
1000
t, PULSE TIME (sec)
Figure 13. Thermal Response (NTD6416ANL DPAK PCB Cu Area 720 mm2 PCB Cu thk 2 oz)
ORDERING INFORMATION
Package
Shipping†
NTD6416ANLT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NTD6416ANL−1G
IPAK
(Pb−Free)
75 Units / Rail
NVD6416ANLT4G*
DPAK
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
*NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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5
NTD6416ANL, NVD6416ANL
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
A
E
b3
c2
B
4
L3
Z
D
1
2
H
DETAIL A
3
L4
b2
e
c
b
0.005 (0.13)
M
C
H
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
NTD6416ANL, NVD6416ANL
PACKAGE DIMENSIONS
IPAK
CASE 369D
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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NTD6416ANL/D