CHA3689
RoHS COMPLIANT
12.5-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3689 is a three-stage self biased
wide band monolithic low noise amplifier.
Vd1
Vd2
Vd3
RFin
The circuit is manufactured with a standard
P-HEMT process: 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
RFout
It is supplied in chip form.
B
D
Gain and NF @ 120 mA (BD grounded)
Main Features
32
30
28
26
■ Broadband performance 12.5-30GHz
■ 2.0dB noise figure
■ 26dB gain (12.5-26GHz)
■ 26dBm output IP3 (18-30GHz)
■ Low DC power consumption
■ Chip size: 2,45 x 1,21 x 0,1 mm
Gain
24
Gain & NF (dB)
22
20
18
16
14
12
10
8
NF
6
4
2
0
12
14
16
18
20
22
24
26
28
Frequency (GHz)
On wafer typical measurements
Main Characteristics
Tamb = +25°C, Vd1=Vd2=Vd3 = +4V
Symbol
Pads B, D = GND (High current configuration)
Parameter
Min
Typ
Max
Unit
2.0
2.5
dB
NF
Noise figure
G
Gain
23
26
dB
Output power at 1dB gain compression
14
15
dBm
P1dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA36897082 - 23 Mar 07
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
30
12.5-30GHz Low Noise Amplifier
CHA3689
Electrical Characteristics (low current configuration)
These values are representative on wafer measurements that are made without bonding wires
at the RF ports.
Tamb = +25°C, Vd1=Vd2=Vd3= +4V
Symbol
Fop
Pads B, D = not connected
Parameter
Min
Operating frequency range
G
Typ
12.5
Max
Unit
30
GHz
Gain (12.5 - 24GHz)
23
26
dB
Gain (24.5 - 30GHz)
20
22
dB
Gain flatness (12.5 - 24GHz)
±2.5
dB
Gain flatness (24.5 - 30GHz)
±2
dB
Noise figure (12.5 - 24GHz)
1.8
2.3
dB
Noise figure (24.5 - 30GHz)
2.0
2.5
dB
Input return loss (12.5 - 16GHz) (27 - 30GHz)
3.0:1
3.5:1
Input return loss (16 - 27GHz)
2.0:1
2.5:1
S22
Output return loss
2.5:1
3.0:1
OIP3
3rd order intercept point (18 – 30GHz)
23
24
dBm
P1dB
Output power at 1dB gain compression
13
14
dBm
∆G
NF
S11
Id
Drain bias current
90
Vd
Drain bias voltage
4
120
mA
V
Electrical Characteristics (high current configuration)
Tamb = +25°C, Vd1=Vd2=Vd3 = +4V
Symbol
Fop
G
Pads B, D = GND
Parameter
Min
Operating frequency range
Typ
12.5
Max
Unit
30
GHz
Gain (12.5 - 24GHz)
24
27
dB
Gain (24.5 - 30GHz)
21
23
dB
Gain flatness (12.5 - 24GHz)
±2.5
dB
Gain flatness (24.5 - 30GHz)
±2
dB
Noise figure (12.5 - 24GHz)
1.9
2.4
dB
Noise figure (24.5 - 30GHz)
2.1
2.6
dB
Input return loss (12.5 - 16GHz) (27 - 30GHz)
3.0:1
3.5:1
Input return loss (16 - 27GHz)
2.0:1
2.5:1
S22
Output return loss
2.5:1
3.0:1
OIP3
3rd order intercept point (18 – 30GHz)
25
26
dBm
P1dB
Output power at 1dB gain compression
14
15
dBm
∆G
NF
S11
Id
Drain bias current
120
Vd
Drain bias voltage
4
Ref. : DSCHA36897082 - 23 Mar 07
2/10
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150
mA
V
/Specifications subject to change without notice
12.5-30GHz Low Noise Amplifier
CHA3689
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.5
V
Pin
RF input power
10
dBm
Top
Operating temperature range
-40 to +85
°C
175
°C
-55 to +125
°C
Tj
Tstg
Junction temperature
Storage temperature range
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
Ref. : DSCHA36897082 - 23 Mar 07
3/10
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Specifications subject to change without notice
12.5-30GHz Low Noise Amplifier
CHA3689
Typical Chip on wafer Sij parameters for low current configuration
Tamb = +25°C, Vd1=Vd2=Vd3= +4V, Id = 90 mA
Freq (GHz)
dB(S11)
P(S11) (°)
dB(S12)
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
-0,1
-0,1
-0,2
-0,2
-0,3
-0,5
-1,5
-3,9
-6,7
-6,5
-5,0
-4,5
-5,1
-5,9
-5,9
-8,0
-8,9
-12,8
-15,3
-20,3
-25,7
-26,6
-24,2
-22,4
-18,9
-12,0
-9,2
-7,1
-5,4
-3,5
-2,7
-2,6
-2,6
-2,4
-2,4
-2,3
-2,7
-3,2
-3,6
-23
-35
-48
-64
-81
-106
-141
170
110
53
7
-26
-53
-67
-81
-102
-118
-137
-150
-172
170
105
47
43
57
62
45
27
15
0
-15
-29
-38
-46
-57
-64
-73
-76
-87
-67,3
-61,6
-81,4
-60,5
-63,3
-59,5
-61,4
-55,2
-59,4
-61,7
-51,4
-51,6
-49,3
-61,1
-44,5
-47,5
-47,7
-52,1
-49,2
-59,8
-72,9
-55,4
-54,5
-54,8
-61,9
-47,8
-63,2
-48,4
-49,5
-47,3
-47,6
-45,0
-49,3
-38,8
-45,5
-51,5
-46,1
-56,0
-47,4
Ref. : DSCHA36897082 - 23 Mar 07
Pads B, D = not connected
P(S12) (°)
dB(S21)
-16
-160
132
-176
-15
-2
73
-83
-68
-76
-156
176
-136
-1
67
60
20
7
10
-56
24
71
41
13
-85
177
-179
99
-2
-75
-133
-160
40
98
124
114
-96
142
153
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-65,4
-70,6
-56,0
-33,7
-16,5
-1,4
7,4
15,1
19,5
22,2
23,9
25,1
25,8
26,2
27,3
27,7
28,7
28,5
28,4
27,9
26,9
26,2
25,1
24,4
24,1
24,0
23,0
22,2
21,2
19,8
17,9
15,5
12,9
10,7
8,2
6,2
4,1
2,4
1,1
P (S21) (°)
67
-166
10
-32
-89
-160
123
54
-20
-81
-137
173
126
85
49
7
-30
-72
-108
-147
180
147
116
88
60
26
-4
-35
-67
-100
-133
-162
172
149
129
109
92
75
56
dB(S22)
-0,2
-0,3
-0,5
-1,3
-3,3
-8,0
-14,9
-19,6
-14,6
-11,6
-12,2
-12,5
-13,1
-15,0
-12,3
-12,3
-9,9
-8,1
-7,8
-7,3
-8,2
-8,8
-9,3
-10,2
-12,2
-10,1
-9,9
-9,6
-9,0
-7,9
-6,7
-6,1
-5,4
-4,9
-4,4
-4,0
-4,0
-4,0
-4,1
P(S22) (°)
-30
-47
-66
-90
-118
-147
-143
-142
-73
-108
-134
-153
-178
155
147
121
101
78
56
36
19
9
1
-8
3
8
-1
-1
-2
-1
-9
-14
-22
-26
-34
-40
-48
-54
-62
/Specifications subject to change without notice
12.5-30GHz Low Noise Amplifier
CHA3689
Typical Chip on wafer Sij parameters for high current configuration
Tamb = +25°C, Vd1=Vd2=Vd3= +4V, Id = 120 mA
Pads B, D = GND
Freq (GHz)
dB(S11)
P(S11) (°)
dB(S12)
dB(S21)
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
-0,1
-0,1
-0,1
-0,2
-0,3
-0,5
-1,5
-3,8
-6,6
-6,5
-5,0
-4,6
-5,2
-6,7
-6,6
-7,1
-9,1
-12,0
-14,8
-18,5
-23,6
-26,6
-23,6
-21,8
-17,3
-12,9
-10,1
-7,3
-5,6
-4,0
-3,1
-2,8
-2,8
-2,3
-2,5
-2,3
-3,1
-3,3
-3,9
-23
-35
-48
-63
-80
-105
-140
171
112
55
9
-25
-51
-67
-76
-100
-115
-134
-142
-171
150
101
58
48
54
54
42
27
12
1
-14
-27
-37
-46
-55
-65
-75
-77
-85
-62,8
-60,7
-63,5
-72,0
-74,5
-66,5
-57,0
-65,6
-53,8
-53,3
-52,2
-59,8
-49,6
-45,7
-44,7
-48,0
-60,5
-59,0
-61,1
-56,6
-62,0
-57,1
-59,9
-56,2
-56,5
-51,9
-49,9
-49,0
-44,7
-53,1
-53,6
-59,1
-48,0
-47,2
-43,6
-63,3
-45,0
-46,0
-31,5
Ref. : DSCHA36897082 - 23 Mar 07
P(S12) (°)
-51
9
-105
63
-171
137
-133
-97
-100
-131
-152
165
84
147
79
85
63
-25
131
-81
18
174
150
22
-113
139
-2
33
120
29
128
-80
99
-155
141
109
179
101
144
-59,9
-58,1
-54,9
-33,8
-15,8
-0,7
8,1
15,7
20,1
22,7
24,5
25,7
26,4
26,6
27,3
28,4
29,0
29,0
28,8
28,5
27,4
26,8
25,9
25,3
24,9
24,6
23,7
23,0
22,1
20,8
19,1
16,6
14,0
11,6
9,1
6,8
4,5
2,4
0,7
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P(S21) (°)
dB(S22)
-140
-121
31
-31
-87
-159
124
55
-18
-80
-136
174
127
86
51
11
-27
-68
-104
-142
-176
152
121
93
64
32
1
-30
-61
-95
-129
-159
174
151
130
110
91
75
57
-0,2
-0,3
-0,5
-1,2
-3,2
-8,0
-14,6
-17,5
-13,4
-10,7
-11,4
-11,7
-13,3
-14,6
-13,2
-12,3
-10,2
-8,4
-8,1
-7,5
-8,0
-8,7
-9,3
-10,2
-11,9
-10,8
-10,1
-10,2
-9,4
-8,4
-7,2
-6,2
-5,6
-4,8
-4,3
-4,0
-3,9
-3,9
-3,5
P(S22) (°)
-30
-46
-65
-88
-115
-142
-133
-128
-77
-109
-134
-152
-179
161
148
125
107
78
56
36
18
6
-1
-10
-1
1
-6
-3
-4
-3
-8
-12
-20
-24
-32
-39
-43
-50
-54
Specifications subject to change without notice
12.5-30GHz Low Noise Amplifier
CHA3689
Typical Measured Performance
Tamb = +25°C, Vd1=Vd2=Vd3= +4V
Id = 90 mA / Id = 120 mA for pads B, D = GND
Measurements on wafer (without bonding wires at the RF ports)
Gain and Return Losses @ 90 mA
35
30
Gain & Return Losses (dB)
25
S21
20
15
10
5
S11
0
-5
-10
-15
S22
-20
-25
-30
-35
10
12
14
16
18
20
22
24
26
28
30
32
28
30
32
Frequency (GHz)
Noise figure versus frequency @ 90 mA
5
4,5
4
NF (dB)
3,5
3
2,5
2
1,5
1
0,5
0
10
12
14
16
18
20
22
24
26
Frequency (GHz)
Ref. : DSCHA36897082 - 23 Mar 07
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
/Specifications subject to change without notice
12.5-30GHz Low Noise Amplifier
CHA3689
Gain and Return Losses @ 120 mA (BD grounded)
35
30
25
S21
Gain & Return Losses (dB)
20
15
10
5
S11
0
-5
-10
-15
S22
-20
-25
-30
-35
10
12
14
16
18
20
22
24
26
28
30
32
30
32
Frequency (GHz)
Noise figure versus frequency @ 120 mA (BD grounded)
5
4,5
4
3,5
NF (dB)
3
2,5
2
1,5
1
0,5
0
10
12
14
16
18
20
22
24
26
28
Frequency (GHz)
Ref. : DSCHA36897082 - 23 Mar 07
7/10
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
12.5-30GHz Low Noise Amplifier
CHA3689
Gain and Return Losses @ 120 mA (BD grounded)
35
30
Gain & Return Losses (dB)
25
S21
20
15
10
5
S11
0
-5
-10
-15
-20
S22
-25
-30
-35
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
Frequency (GHz)
T y p ica l O u tp u t P o w er -1 d B @ 9 0 m A a n d 1 2 0 m A
20
Output Power P-1dB (dBm)
19
18
120 mA
17
16
15
14
13
12
11
90 mA
10
9
8
10
12
14
16
18
20
22
24
26
28
30
F req u en cy (G H z)
Ref. : DSCHA36897082 - 23 Mar 07
8/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
32
12.5-30GHz Low Noise Amplifier
CHA3689
Chip Assembly and Mechanical Data
To Vdd DC drain
supply feed
10 nF
120 pF
B
D
To ground versus biasing point
Note: Supply feed might be capacitively bypassed. 25µm diameter gold wire is to be prefered.
DC Pads Size: 100/100 µm, Chip thickness : 100 µm
Ref. : DSCHA36897082 - 23 Mar 07
9/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
12.5-30GHz Low Noise Amplifier
CHA3689
Chip Biasing options
This chip is self-biased, and flexibility is provided by the access to number of pads. The
internal DC electrical schematic is given in order to use these pads in a safe way.
Vd1
Vd2
Vd3
3k
1.34k
42
0.4k
3k
5
0.42k
3.3
0.42k
RFout
RFin
112
20
11.6
13.4
9.9
B
D
The requirement is not to exceed Vds = 3.5Volt ( internal Drain to Source voltage ).
We propose two standard biasing:
•
Low Noise and low consumption:
Vd = 4V and B, D not connected (NC).
Idd = 90mA & Pout-1dB = 14dBm Typical.
•
Low Noise and higher output power:
Vd = 4V and B, D grounded.
Idd = 120mA & Pout-1dB = 15dBm Typical.
Ordering Information
Chip form :
CHA3689-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United Monolithic
Semiconductors S.A.S.
Ref. : DSCHA36897082 - 23 Mar 07
10/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09