Optical MEMs ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING Optical MEMs Dr. Lynn Fuller Webpage: http://people.rit.edu/lffeee Microelectronic Engineering Rochester Institute of Technology 82 Lomb Memorial Drive Rochester, NY 14623-5604 Tel (585) 475-2035 Fax (585) 475-5041 Email: Lynn.Fuller@rit.edu Department Webpage: http://www.microe.rit.edu Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor 5-2-2008 mem_optc.ppt Page 1 Optical MEMs OUTLINE Light Sources Light Detectors Fiber Optic Components Mirrors and Applications Light Emissive Devices Light Modulators Spectro Radiometers Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 2 Optical MEMs SPECTRICAL DISTRIBUTION OF SOLAR RADIANT POWER Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 3 Optical MEMs BLACK BODY RADIATION Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 4 Optical MEMs HOT FILIMENT LIGHT SOURCES Dave Borkholder Senior project 1993 600 µm 100 µm Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 5 Optical MEMs EMISSION SPECTRA OF THE Hg VAPOR BULB i-line, 365 nm 1.0 g-line, 436 nm h f 0.5 e 0.0 300 Rochester Institute of Technology Microelectronic Engineering 400 500 600 700 Wavelength (nm) © May 2, 2008 Dr. Lynn Fuller, Professor Page 6 Optical MEMs RELATIVE LUMINOSITY VS WAVELENGTH Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 7 Optical MEMs PHOTODIODE space charge layer + BP+ B- p-type B- B- B- B- - P+ + electron and hole pair P+ P+ P+ B- + B- - + B- + P+ P+ + P+ P+ ε P+ n-type I BP+ B- - + P+ P+ Phosphrous donor atom and electron Ionized Immobile Phosphrous donor atom Ionized Immobile Boron acceptor atom Boron acceptor atom and hole Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 8 Optical MEMs PHOTODIODE V I p I n M.A.Green and Keevers I + V - V No Light More Light φ(x) = φ(0) exp-α x Most Light Find % adsorbed for Green light at x=5 µm and Red light at 5 µm Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 9 Optical MEMs CHARGE GENERATION vs WAVELENGTH E = hν = hc / λ h = 6.625 e-34 j/s = (6.625 e-34/1.6e-19) eV/s λ2 λ1 E = 1.55 eV (red) E = 2.50 eV (green) E = 4.14 eV (blue) λ3 + BP+ B- B- B- BP+ n-type P+ - + B- + P+ P+ + λ4 p-type P+ P+ ε P+ B- P+ II B- B- - + P+ P+ Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 10 Optical MEMs CHARGE GENERATION IN SEMICONDUCTORS E = hν = hc / λ What wavelengths will not generate e-h pairs in silicon. Thus silicon is transparent or light of this wavelength or longer is not adsorbed? Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 11 Optical MEMs CHARGE COLLECTION IN MOS STRUCTURES E = hν = hc / λ +V - depletion region + - B- ε B- - B- λ4 p-type Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 12 + - B- electron and hole pair - - - λ3 + + E = 1.55 eV (red) E = 2.50 eV (green) E = 4.14 eV (blue) thin poly gate λ2 λ1 + h = 6.625 e-34 j/s = (6.625 e-34/1.6e-19) eV/s Optical MEMs PHOTO DETECTORS Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 13 Optical MEMs TRANSMISSION PROPERTIES OF OPTICAL GLASS Transmission, % 100 80 Quartz, 90 mil Borosilicate Glass 60 mils 60 40 White Crown Glass 60 mils 20 200 250 Green Soda Lime Glass 60 mils 350 300 Wavelength (nm) 400 Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 14 Optical MEMs FIBER OPTIC COMPONENTS Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 15 Optical MEMs LASER AND FRESNEL LENS Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 16 Optical MEMs OPTICAL SYSTEM Fresnel Lens Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 17 Optical MEMs HINDGE Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 18 Optical MEMs SELF ASSEMBLY Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 19 Optical MEMs MIRROR Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 20 Optical MEMs MIRRORS MOEMs - Micro Optical Electro Mechanical Systems Lucent Technologies – Lambda router, 256 mirror fiber optic multiplexer Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 21 Optical MEMs MICRO-MIRROR Inflection point Movable mirror poly 0 Substrate poly 1 Micro-mirror Perspective View Torsion Hinge Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 22 Optical MEMs POLYIMIDE ON HEATER Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Jeremiah Hebding Page 23 Optical MEMs DIGITAL MIRROR LIGHT PROJECTION SYSTEM Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 24 Optical MEMs TORSIONAL MIRRORS Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 25 Optical MEMs FIELD EMISSION TIPS FOR FLAT PANNEL DISPLAYS 1 µm Alex Raub, 1995, now at National Semiconductor Santa Clara, CA Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 26 Optical MEMs FIELD EMISSION FLAT PANNEL DISPLAYS Transparent Si 2 Window O Seal/Plug Vacuum Chamber Control Gate Emitter Insulator Low Voltage Phosphor Substrate Micro-encapsulated Chamber Integrated Phosphor Field Emission Device .900 Color Chart of AVT Phoshors .800 .700 .600 YELLOWISH GREEN GREEN .500 .400 BLUISH GREEN BLUE .300 GREEN .200 Rochester Institute of Technology Microelectronic Engineering PINK RED PURPLISH RED REDDISH PURPLE GREENISH BLUE BLUE .100 000 © May 2, 2008 Dr. Lynn Fuller, Professor .100 .200 .300 .400 .500 .600 .700 .800 Page 27 Optical MEMs REFLECTIVE MECHANICAL LIGHT MODULATOR Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 28 Optical MEMs SENIOR PROJECT Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Sushil Shakya Page 29 Optical MEMs MICRO SPECTRO RADIOMETER Light Diffraction Grating Plasma Etch Endpoint Detection Nanospec Like Film Thickness Light Source Characterization Output Electronics i-line, 365 nm 1.0 g-line, 436 nm clock h f 0.5 e 0.0 300 400 500 600 700 Wavelength (nm) Diodes Photodiode Number Acknowledgments: Marion Jess, Visiting Scholar from Germany Rochester Institute of Technology Wessel Valster, Student of Hogeschool Enschede,The Netherlands Microelectronic Engineering Zoran Uskokovic, RIT, graduate student in MicroE © May 2, 2008 Dr. Lynn Fuller, Professor Page 30 Optical MEMs DIFFRACTION GRATING S a a Light is diffracted into a series of intensity spots called diffraction orders ξ d 1 1st 3rd 1st 2nd Rochester Institute of Technology Microelectronic Engineering 3rd 2nd r1 © May 2, 2008 Dr. Lynn Fuller, Professor Page 31 Optical MEMs CALCULATIONS Grating of 2 um lines and 2 um space gives S=4 um k is the diffraction order λ is wavelength The angle ξ sin ξ = k λ / n S and tan ξ = r/d for d = 1000um, and n = 1.5 for glass ξ1 3.34 5.24 7.17 350 nm 550 nm 750 nm ξ2 6.71 10.6 14.5 r1 58um 92um 126um r2 117um 187um 259um Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 32 Optical MEMs MICRO-SPECTRO-RADIOMETER Diffraction Grating 1mm Glass Analog Switches Multiplexer Shift Registers I/O Pads 128 Ion Implanted p+ diode Photo Detectors n-type silicon Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 33 Optical MEMs FIRST TEST CHIP Photo diodes Marion Jess 1996 Shielded area Pads to 128 diodes Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 34 Optical MEMs RESULTS OF FIRST TEST CHIP Some Light More Light Photodiode Current vs Voltage Rochester Institute of Technology Microelectronic Engineering Measurements from 128 diodes illuminated through different color filters © May 2, 2008 Dr. Lynn Fuller, Professor Page 35 Optical MEMs 128 PHOTODIODES MICRO-SPECTRO-PHOTOMETER ON CHIP ELECTRONICS FOR ELECTRONIC READOUT D1 D2 D3 D4 D5 D6 D7 D8 SWITCHES A A B B C Analog out C A….G 7 BIT COUNTER Sync pulse (at 0000000B) Sync Clock Rochester Institute of Technology Microelectronic Engineering Reset © May 2, 2008 Dr. Lynn Fuller, Professor Page 36 Optical MEMs POLY GATE PMOS + DEPLETION MODE IMPLANT MULTIPLEXER Reset C + Internal Rf 100 pF Ri 7 B it Counter A A’ B B’ C C’ D7 D0 Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 37 + Vout Optical MEMs SECOND TEST CHIP Multiplexer T Type FF Binary Counter Photodiodes Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 38 Optical MEMs REFERENCES 1. Micro Spectro Photometer by Marion Jess, Carl Duisberg Gesellschaft e.V., Fachhochschule Koln, Germany , August 1996. 2. Fundamentals of Microfabrication, Marc Madou, CRC Press, LLC, 1997. 3. Scientific Measurement Systems, Inc., 2527 Foresight Circle, Grand Junction, CO 81505-1007. 4. Micromachined Transducers, Gregory T. A. Kovacs, McGraw-Hill, 1998 Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 39 Optical MEMs HOMEWORK 1. Find a recent technical publication on the use of MEMS for optical systems. Summarize the important points in your own words and attach a copy of the full article. Rochester Institute of Technology Microelectronic Engineering © May 2, 2008 Dr. Lynn Fuller, Professor Page 40