Cree® Direct Attach™ DA2432™ LEDs
CxxxDA2432-Sxxx00-2
Data Sheet
Cree’s Direct Attach™ DA2432™ LEDs are the next generation of solid-state LED emitters that combine highly efficient
InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for
the LCD backlighting and general-illumination markets. The DA2432 LEDs are among the brightest in the top-view
market while delivering a low forward voltage, resulting in a very bright and highly efficient solution. The bondpaddown design allows for eutectic die attach, eliminating the need for wire bonds, and enables superior performance
from improved thermal management. The design is optimally suited for industry-standard top-view packages.
FEATURES
APPLICATIONS
•
Rectangular LED RF Performance
•
General Illumination
–
450 & 460 nm – 33 mW min
–
White LEDs
–
470 nm – 30 mW min
–
Chip-on-Board (COB)
•
High Reliability - Eutectic Attach
–
Multi-chip Arrays
•
Low Forward Voltage (Vf) – 3.1 V Typical at 20 mA
–
High Voltage Arrays
•
Maximum DC Forward Current – 100 mA
•
1000-V ESD Threshold Rating
•
InGaN Junction-Down Design •
for Improved Thermal Management
•
Direct Attach - No wire bonding
•
Excellent Performance over Temperature
•
LCD Backlighting
–
Television
–
Monitors
–
Portable PCs & Tablets
LED Video Displays
CxxxDA2432-Sxxx00-2 Chip Diagram
Anode (+)
170 x 60 µm
A
CPR3FM Rev
Data Sheet:
240 x 320 µm
Gap 60 µm
Thickness
140 µm
Top View
Cathode (-)
145 x 105 µm
Side View
Subject to change without notice.
www.cree.com
Bottom View
1
Maximum Ratings at TA = 25°C Notes 1,3, & 4
CxxxDA2432-Sxxx00-2
DC Forward Current
100 mA
Peak Forward Current (1/10 duty cycle @ 1 kHz)
150 mA
LED Junction Temperature
150°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
LED Chip Storage Temperature
-40°C to +120°C
Recommended Die Sheet Storage Conditions
Electrostatic Discharge Threshold (HBM)
≤30°C / ≤85% RH
1000 V
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Class 2
Note 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA
Part Number
Note 3
Forward Voltage (Vf, V)
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C450DA2432-Sxxx00-2
2.8
3.1
3.4
2
20
C460DA2432-Sxxx00-2
2.8
3.1
3.4
2
21
C470DA2432-Sxxx00-2
2.8
3.1
3.4
2
21
Mechanical Specifications
CxxxDA2432-Sxxx00-2
Description
Dimension
Tolerance
P-N Junction Area (μm)
210 x 280
±35
Chip Bottom Area (μm)
240 x 320
±35
Chip Top Area (μm)
110 x 190
±35
Chip Thickness (μm)
140
±15
Bond Pad Width – Anode (um)
60
±15
Bond Pad Length – Anode (um)
170
±35
Bond Pad Width – Cathode (um)
105
±35
Bond Pad Length – Cathode (um)
145
±35
60
±15
3
±0.5
Bond Pad Gap (μm)
Bond Pad Thickness (μm)
Notes:
1.
Maximum ratings are package-dependent. The above ratings were determined using a chip sub-mount on MCPCB (with silicone encapsulation and flux
eutectic die attach) for characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific package to
determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
2.
Product resistance to electrostatic discharge (ESD) according to the
HBM is measured by simulating ESD using a rapid avalanche energy
test (RAET). The RAET procedures are designed to approximate the
maximum ESD ratings shown. The ESD classification of Class 2 is
based on sampling testing according to MIL-STD-883E.
4.
All products conform to the listed minimum and maximum
specifications for electrical and optical characteristics when
assembled and operated at 50 mA within the maximum ratings
shown above. Efficiency decreases at higher currents. Typical
values given are within the range of average values expected by
manufacturer in large quantities and are provided for information
only. All measurements are based on a thru-hole package (with
Hysol OS4000 encapsulant and flux eutectic die attach). Optical
characteristics are measured in an integrating sphere using
Illuminance E.
The maximum forward current is determined by the thermal
resistance between the LED junction and ambient. It is crucial for
the end-product to be designed in a manner that minimizes the
thermal resistance from the LED junction to ambient in order to
optimize product performance.
Maximum Operating Current (mA)
3.
120
100
80
60
Rth j-a = 10 °C/W
Rth j-a = 20 °C/W
Rth j-a = 30 °C/W
Rth j-a = 40 °C/W
40
20
0
100
110
120
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree® and
the Cree logo are registered trademarks, and Direct Attach™ and DA2432™ are trademarks of Cree, Inc.
2
CPR3FM Rev A
130
140
150
Ambient Temperature (°C)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475
USA Tel: +1.919.313.5300
Fax: +1.919.313.5870
www.cree.com/chips
Standard Bins for CxxxDA2432-Sxxx00-2
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxDA2432-Sxxxxx-2) orders may be filled with any or all bins (CxxxDA2432-xxxxx-2)
contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 20 mA.
Radiant Flux (mW)
C450DA2432-S3300-2
40
36
C450DA2432-0713-2
C450DA2432-0714-2
C450DA2432-0715-2
C450DA2432-0716-2
C450DA2432-0709-2
C450DA2432-0710-2
C450DA2432-0711-2
C450DA2432-0712-2
C450DA2432-0705-2
C450DA2432-0706-2
C450DA2432-0707-2
C450DA2432-0708-2
33
445
447.5
450
452.5
455
Radiant Flux (mW)
Dominant Wavelength (nm)
C460DA2432-S3300
C460DA2432-0713-2
C460DA2432-0714-2
C460DA2432-0715-2
C460DA2432-0716-2
C460DA2432-0709-2
C460DA2432-0710-2
C460DA2432-0711-2
C460DA2432-0712-2
C460DA2432-0705-2
C460DA2432-0706-2
C460DA2432-0707-2
C460DA2432-0708-2
40
36
33
455
457.5
460
462.5
465
Radiant Flux (mW)
Dominant Wavelength (nm)
C470DA2432-S3000-2
C470DA2432-0713-2
C470DA2432-0714-2
C470DA2432-0715-2
C470DA2432-0716-2
C470DA2432-0709-2
C470DA2432-0710-2
C470DA2432-0711-2
C470DA2432-0712-2
C470DA2432-0705-2
C470DA2432-0706-2
C470DA2432-0707-2
C470DA2432-0708-2
C470DA2432-0701-2
C470DA2432-0702-2
C470DA2432-0703-2
C470DA2432-0704-2
40
36
33
30
465
467.5
470
472.5
475
Dominant Wavelength (nm)
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree® and
the Cree logo are registered trademarks, and Direct Attach™ and DA2432™ are trademarks of Cree, Inc.
3
CPR3FM Rev A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475
USA Tel: +1.919.313.5300
Fax: +1.919.313.5870
www.cree.com/chips
Characteristic Curves
These are representative measurements for the DA LED product. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.
Forward Current vs. Forward Voltage
125
If (mA)
100
75
50
25
0
2
3
4
5
2150
1
100
If (mA)
150
Dominant Wavelength Shift (nm)
Wavelength
Shift vs.
vs. Forward
ForwardVoltage
Current
Forward Current
0
50
-1
-2
0
0
0
25
1
50
Vf (V)
600%
500%
80
400%
Relative Intensity
Relative Light Intensity
100
125
4
150
5
Relative Intensity vs. Wavelength
100
300%
200%
60
40
20
100%
0
0
25
50
75
If (mA)
100
125
150
350
400
450
CPR3FM Rev A
500
550
600
Wavelength (nm)
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree® and
the Cree logo are registered trademarks, and Direct Attach™ and DA2432™ are trademarks of Cree, Inc.
4
3
Vf (V)
If (mA)
Relative Intensity vs. Forward Current
0%
75
2
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475
USA Tel: +1.919.313.5300
Fax: +1.919.313.5870
www.cree.com/chips
Radiation Pattern
This is a representative radiation pattern for the DA LED product. Actual patterns will vary slightly for each chip.
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree® and
the Cree logo are registered trademarks, and Direct Attach™ and DA2432™ are trademarks of Cree, Inc.
5
CPR3FM Rev A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475
USA Tel: +1.919.313.5300
Fax: +1.919.313.5870
www.cree.com/chips