2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
Data Sheet
SST12L012.4-2.5 GHz Low-Noise Amplifier
FEATURES:
APPLICATIONS:
•
• WLAN
• Bluetooth
• Wireless Network
•
•
•
•
•
•
Suitable Gain:
– Typically 14 dB gain across 2.4–2.5 GHz
Low-Noise Figure:
– Typically 1.55 dB across 2.4–2.5 GHz
IIP3:
– 3 dBm across 2.4–2.5 GHz
Low-Current Consumption
– 10-12 mA across 2.4–2.5 GHz
50Ω Input/Output Matched
Packages available
– 6-contact UQFN – 3 mm x 1.6 mm
All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST12LN01 is a cost effective Low-Noise Amplifier
(LNA) which requires no external RF-matching components. This device is based on the 0.5m GaAs PHEMT
technology, and complies with 802.11 b/g applications.
SST12LN01 provides high-performance, low-noise, and
moderate-gain operation within the 2.4–2.5 GHz frequency
band. Across this frequency band, the LNA typically provides 14 dB gain and 1.55 dB noise figure.
This LNA cell is designed with a self DC-biasing scheme,
which maintains low DC current consumption, nominally at
11 mA, during operation. Optimum performance is
achieved with only a single power supply, and no external
bias resistors or networks are required. The input and output ports are single-ended 50Ω matched. RF ports are also
DC isolated requiring no DC blocking capacitors or matching components.
The SST12LN01 is offered in a 6-contact UQFN package.
See Figure 2 for pin assignments and Table 1 for pin
descriptions.
©2009 Silicon Storage Technology, Inc.
S71329-04-000
12/09
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
Data Sheet
FUNCTIONAL BLOCKS
6
1
LNA
2
5
4
3
1329 F1.0
FIGURE 1: Functional Block Diagram
©2009 Silicon Storage Technology, Inc.
S71329-04-000
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2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
Data Sheet
PIN ASSIGNMENTS
Top View
(contacts facing down)
VDD
NC
1
RFIN
2
6
RF and DC GND
0
3
5
RFOUT
4
NC
NC
1329 6-uqfn P1.0
FIGURE 2: Pin Assignments for 16-contact UQFN
PIN DESCRIPTIONS
TABLE 1: Pin Description
Symbol
Pin No.
Pin Name
GND
0
Ground
NC
1
No Connection
RFIN
2
NC
3
No Connection
NC
4
No Connection
RFOUT
5
VDD
6
Type1
Unconnected pin
I
2.4G RF input
Unconnected pin
Unconnected pin
O
Power Supply
Function
2.4G RF output
PWR
T1.0 1329
1. I=Input, O=Output
©2009 Silicon Storage Technology, Inc.
S71329-04-000
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2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
Data Sheet
ELECTRICAL SPECIFICATIONS
The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current specifications. Refer to Figure 3 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Input power to pin 2 (PIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 Bm
Average output power (POUT)1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 dBm
Supply Voltage at pin 6 (VDD). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.6V
DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 mA
Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the maximum rating
of average output power could cause permanent damage to the device.
Operating Range
Range
Extended
Ambient Temp
VCC
-20 to +80ºC
2.9–3.5V
TABLE 2: DC Electrical Characteristics
Symbol
Parameter
Min.
Typ
Max.
Unit
VCC
Supply Voltage at pin 6
3.3
V
ICC
Supply Current 2.4–2.5 GHz
11
mA
T2.0 1329
TABLE 3: AC Electrical Characteristics for Configuration
Symbol
Parameter
Min.
FL-U
Frequency range
2400
G
Small signal gain, 2.4–2.55 GHz
NF
Noise Figure, 2.4–2.55 GHz
IIP3
2.4–2.55 GHz
Typ
Max.
Unit
2550
MHz
14
dB
1.55
dB
3
dBm
T3.2 1329
©2009 Silicon Storage Technology, Inc.
S71329-04-000
4
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2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
Data Sheet
TYPICAL PERFORMANCE CHARACTERISTICS
Test Conditions: VDDL = 3.0V, TA = 25°C, unless otherwise specified
S11 verus Frequency
S12 verus Frequency
20
20
10
10
S12 (dB)
S11 (dB)
0
0
-10
-20
-10
-20
-30
-40
-30
-50
-40
0
1
2
3
4
5
6
7
8
9
10
-60
0
Frequency (GHz)
1
2
3
20
20
10
10
0
0
-10
-20
-30
-30
-40
-40
2
3
4
5
6
6
7
8
9
10
8
9
10
-10
-20
1
5
S22 verus Frequency
S22 (dB)
S21 (dB)
S21 verus Frequency
0
4
Frequency (GHz)
7
8
9
10
Frequency (GHz)
0
1
2
3
4
5
6
7
Frequency (GHz)
1329-sparm1.2
FIGURE 3: S-Parameters
©2009 Silicon Storage Technology, Inc.
S71329-04-000
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2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
Data Sheet
Noise Figure versus Frequency
3.5
Room Temp
80 Degree C
3
-10 Degree C
Noise Figure (dB)
2.5
2
1.5
1
0.5
0
1.5
2
2.5
3
Frequency (GHz)
1329 F4.1
FIGURE 4: Noise Figure versus Frequency
20
15
Gain (dB)
10
5
0
Room temp
-5
Temp = 80 degree
Temp = -10 degree
-10
1
2
3
4
Frequency (GHz)
1329 F7.0
FIGURE 5: Frequency Response of Gain (S21) for three Temperatures
©2009 Silicon Storage Technology, Inc.
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2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
Data Sheet
IP1dB versus Frequency
0
VDD = 3.3V
-1
VDD = 3.0V
VDD = 3.6V
-2
-3
IP1dB
-4
-5
-6
-7
-8
-9
-10
2
2.2
2.4
2.6
2.8
3
Frequency (GHz)
1329 F5.1
FIGURE 6: Input P1dB versus Frequency
©2009 Silicon Storage Technology, Inc.
S71329-04-000
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2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
Data Sheet
IIP3 versus Frequency
10
VDD = 3.3V
VDD = 3.0V
9
VDD = 3.6V
8
IIP3 (dBm)
7
6
5
4
3
2
1
0
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
Frequency(GHz)
1329 F6.1
FIGURE 7: Input IP3 versus Frequency
VDD
0.1 µF
6
1
DC Block
DC Block
50Ω
RFIN
2
50Ω
5
RFOUT
4
3
1329 app_circuit-1.2
FIGURE 8: Typical Application Circuit
©2009 Silicon Storage Technology, Inc.
S71329-04-000
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2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
Data Sheet
PRODUCT ORDERING INFORMATION
SST12LN
SSTXXLN
01
XX
- QU6
- XXX
F
X
Environmental Attribute
F1 = non-Pb/non-Sn contact (lead) finish
Package Modifier
6 = 6 contact
Package Type
QU = UQFN
Product Family Identifier
Product Type
N = Low-Noise Amplifier
Voltage
L = 3.0-3.6V
Frequency of Operation
2 = 2.4 GHz
Product Line
1 = SST Communications
1. Environmental suffix “F” denotes non-Pb/non-Sn solder.
SST non-Pb/non-Sn solder devices are “RoHS Compliant”.
Valid combinations for SST12LN01
SST12LN01-QU6F
SST12LN01 Evaluation Kits
SST12LN01-QU6F-K
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations and to determine availability of new combinations.
©2009 Silicon Storage Technology, Inc.
S71329-04-000
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2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
Data Sheet
PACKAGING DIAGRAMS
TOP VIEW
SIDE VIEW
BOTTOM VIEW
0.15
See paddle
details
0.475
1
Pin #1
0.25
1.60 ± 0.10
0.5 BSC
0.075
0.05 Max
3.00 ± 0.10
0.3
0.4
0.60
0.50
Exposed Paddle Detail
0.25
See note 2
0.425
Note: 1. Although many dimensions are simliar to those of JEDEC JEP95 MO-220I,
this specific package is not registered.
2. The external paddle is electrically connected to the die back-side and possibly
to certain VSS leads. This paddle can be soldered to the PC board;
it is suggested to connect this paddle to the VSS of the unit.
Connection of this paddle to any other voltage potential can result in shorts and/or
electrical malfunction of the device.
3. Untoleranced dimensions are nominal target dimensions.
4. All linear dimensions are in millimeters (max/min).
1.25
0.425
0.25
1.80
1mm
6-uqfn-3x1.6-QU6-1.0
FIGURE 9: 6-contact Ultra-thin Quad Flat No-lead (UQFN)
SST Package Code: QU6
TABLE 4: Revision History
Revision
Description
Date
00
•
Initial release of data sheet
Sep 2006
01
•
Updated “Features:” on page 1
Sep 2007
02
•
•
•
•
•
Jun 2008
•
•
•
Revised Product Description on page 1
Change Suitable Gain to 14 dB globally
Changed low-noise figure 1.55 dB globally
Changes low-current consumption to 10-12 mA
Edited Table 2, DC Electrical Characteristics and Table 3, AC Electrical Characteristics on page
Replaced Figures 3 through 7, pages 5 through 8
Edited Figure 8, page 8
Added Figure 5 on page 8
03
•
Updated “Contact Information” on page 11
Feb 2009
04
•
Updated document status from “Preliminary Specifications” to “Data Sheet”
Dec 2009
©2009 Silicon Storage Technology, Inc.
S71329-04-000
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2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
Data Sheet
CONTACT INFORMATION
Marketing
SST Communications Corp.
5340 Alla Road, Ste. 210
Los Angeles, CA 90066
Tel: 310-577-3600
Fax: 310-577-3605
Sales and Marketing Offices
NORTH AMERICA
ASIA PACIFIC NORTH
Silicon Storage Technology, Inc.
1171 Sonora Court
Sunnyvale, CA 94086-5308
Tel: 408-735-9110
Fax: 408-735-9036
SST Macao
Room N, 6th Floor,
Macao Finance Center, No. 202A-246,
Rua de Pequim, Macau
Tel: 853-2870-6022
Fax: 853-2870-6023
EUROPE
ASIA PACIFIC SOUTH
Silicon Storage Technology Ltd.
Mark House
9-11 Queens Road
Hersham, Surrey
KT12 5LU UK
Tel: 44 (0) 1932-238133
Fax: 44 (0) 1932-230567
SST Communications Co.
16F-6, No. 75, Sec.1, Sintai 5th Rd
Sijhih City, Taipei County 22101
Taiwan, R.O.C.
Tel: 886-2-8698-1198
Fax: 886-2-8698-1190
JAPAN
KOREA
SST Japan
NOF Tameike Bldg, 9F
1-1-14 Akasaka, Minato-ku
Tokyo, Japan 107-0052
Tel: 81-3-5575-5515
Fax:81-3-5575-5516
SST Korea
6F, Heungkuk Life Insurance Bldg 6-7
Sunae-Dong, Bundang-Gu, Sungnam-Si
Gyunggi-Do, Korea, 463-020
Tel: 82-31-715-9138
Fax: 82-31-715-9137
Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036
www.SuperFlash.com or www.sst.com
©2009 Silicon Storage Technology, Inc.
S71329-04-000
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12/09