2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
Preliminary Specifications
SST12L012.4-2.5 GHz Low-Noise Amplifier
FEATURES:
APPLICATIONS:
•
• WLAN
• Bluetooth
• Wireless Network
•
•
•
•
•
•
Suitable Gain:
– Typically 12-13 dB gain across 2.4–2.5 GHz
Low Noise Figure:
– 1.2-1.5 dB across 2.4–2.5 GHz
IIP3:
– 3 dBm across 2.4–2.5 GHz
Low Current Consumption
– 12 mA across 2.4–2.5 GHz
50Ω Input/Output Matched
Packages available
– 6-contact UQFN – 3 mm x 1.6 mm
All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST12LN01 is a cost effective Low Noise Amplifier
(LNA) which does not require external RF-matching components on PCB applications. This device is based on the
0.5µm GaAs PHEMT technology, and complies with
802.11 b/g applications.
SST12LN01 provides high-performance, low-noise, and
mild-gain operations within the 2.4–2.5 GHz frequency
band. Across this frequency band, this device typically provides 12-13 dB gain.
This LNA cell is equipped with a self DC-biasing scheme,
which helps keep the DC consumption very low during
operation. A pair of singled-ended, input and output ports is
assigned to the LNA cell with a 50 RF match.
The SST12LN01 is offered in a 6-contact UQFN package.
See Figure 2 for pin assignments and Table 1 for pin
descriptions.
©2007 Silicon Storage Technology, Inc.
S71329-01-000
09/07
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
Preliminary Specifications
FUNCTIONAL BLOCKS
6
1
LNA
2
5
4
3
1329 F1.0
FIGURE 1: Functional Block Diagram
©2007 Silicon Storage Technology, Inc.
S71329-01-000
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2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
Preliminary Specifications
PIN ASSIGNMENTS
Top View
(contacts facing down)
VDD
NC
1
RFIN
2
6
RF and DC GND
0
3
5
RFOUT
4
NC
NC
1329 6-uqfn P1.0
FIGURE 2: Pin Assignments for 16-contact UQFN
PIN DESCRIPTIONS
TABLE 1: Pin Description
Symbol
Pin No.
Pin Name
GND
0
Ground
NC
1
No Connection
RFIN
2
NC
3
No Connection
NC
4
No Connection
RFOUT
5
VDD
6
Type1
Unconnected pin
I
2.4G RF input
Unconnected pin
Unconnected pin
O
Power Supply
Function
2.4G RF output
PWR
T1.0 1329
1. I=Input, O=Output
©2007 Silicon Storage Technology, Inc.
S71329-01-000
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2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
Preliminary Specifications
ELECTRICAL SPECIFICATIONS
The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current specifications. Refer to Figure 3 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Input power to pin 2 (PIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm
Average output power (POUT)1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-15 dBm
Supply Voltage at pin 6 (VDD). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.5V
DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 mA
Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the maximum rating
of average output power could cause permanent damage to the device.
Operating Range
Range
Extended
Ambient Temp
VCC
-20 to +80ºC
2.9–3.5V
TABLE 2: DC Electrical Characteristics
Symbol
Parameter
Min.
Typ
Max.
Unit
VCC
Supply Voltage at pin 6
3.0
V
ICC
Supply Current 2.4–2.5 GHz
12
mA
T2.0 1329
TABLE 3: AC Electrical Characteristics for Configuration
Symbol
Parameter
Min.
FL-U
Frequency range
2400
G
Small signal gain, 2.4–2.55 GHz
NF
Noise Figure, 2.4–2.55 GHz
IIP3
2.4–2.55 GHz
Typ
Max.
Unit
2550
MHz
12
13
dB
1.14
1.5
dB
3
dBm
T3.2 1329
©2007 Silicon Storage Technology, Inc.
S71329-01-000
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09/07
2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
Preliminary Specifications
TYPICAL PERFORMANCE CHARACTERISTICS
Test Conditions: VDDL = 3.0V, TA = 25°C, unless otherwise specified
S12 versus Frequency
S11 versus Frequency
20
20
10
10
0
0
S12 (dB)
S11 (dB)
-10
-10
-20
-30
-20
-40
-30
-50
-40
-60
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
Frequency (G Hz)
Frequency (G Hz)
S21 versus Frequency
S22 versus Frequency
20
20
10
10
0
0
S22 (dB)
S21 (dB)
0
-10
9
10
8
9
10
-10
-20
-20
-30
-30
-40
8
-40
0
1
2
3
4
5
6
7
8
9
10
0
Frequency (G Hz)
1
2
3
4
5
6
7
Frequency (G Hz)
1329-sparm1.1
FIGURE 3: S-Parameters
©2007 Silicon Storage Technology, Inc.
S71329-01-000
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2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
Preliminary Specifications
3.0
2.5
Noise Figure (dB)
2.0
1.5
1.0
0.5
0.0
1.5
2.0
2.5
3.0
Frequency (GHz)
1329 F4.0
FIGURE 4: Noise Figure versus Frequency
©2007 Silicon Storage Technology, Inc.
S71329-01-000
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09/07
2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
Preliminary Specifications
0
IP1dB (dBm)
-5
-10
-15
-20
2.0
2.2
2.4
2.6
2.8
3.0
Frequency (GHz)
1329 F5.0
FIGURE 5: Input P1dB versus Frequency
©2007 Silicon Storage Technology, Inc.
S71329-01-000
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09/07
2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
Preliminary Specifications
10
9
8
7
IIP3 (dBm)
6
5
4
3
2
1
0
2.0
2.2
2.4
2.6
2.8
3.0
Frequency (GHz)
1329 F6.0
FIGURE 6: Input IP3 versus Frequency
VDD
0.1 µF
6
1
47 pF
RFIN
50Ω
2
5
RFOUT
4
3
1329 app_circuit-1.0
FIGURE 7: Typical Application Circuit
©2007 Silicon Storage Technology, Inc.
S71329-01-000
8
09/07
2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
Preliminary Specifications
PRODUCT ORDERING INFORMATION
SST12LN
SSTXXLN
01
XX
- QU6
- XXX
F
X
Environmental Attribute
F1 = non-Pb/non-Sn contact (lead) finish
Package Modifier
6 = 6 contact
Package Type
QU = UQFN
Product Family Identifier
Product Type
N = Low Noise Amplifier
Voltage
L = 3.0-3.6V
Frequency of Operation
2 = 2.4 GHz
Product Line
1 = SST Communications
1. Environmental suffix “F” denotes non-Pb/non-Sn solder.
SST non-Pb/non-Sn solder devices are “RoHS Compliant”.
Valid combinations for SST12LN01
SST12LN01-QU6F
SST12LN01 Evaluation Kits
SST12LN01-QU6F-K
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations and to determine availability of new combinations.
©2007 Silicon Storage Technology, Inc.
S71329-01-000
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09/07
2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
Preliminary Specifications
PACKAGING DIAGRAMS
TOP VIEW
SIDE VIEW
BOTTOM VIEW
0.15
See paddle
details
0.475
1
Pin #1
0.25
1.60 ± 0.10
0.5 BSC
0.075
0.05 Max
3.00 ± 0.10
0.3
0.4
0.60
0.50
Exposed Paddle Detail
0.25
See note 2
0.425
Note: 1. Although many dimensions are simliar to those of JEDEC JEP95 MO-220I,
this specific package is not registered.
2. The external paddle is electrically connected to the die back-side and possibly
to certain VSS leads. This paddle can be soldered to the PC board;
it is suggested to connect this paddle to the VSS of the unit.
Connection of this paddle to any other voltage potential can result in shorts and/or
electrical malfunction of the device.
3. Untoleranced dimensions are nominal target dimensions.
4. All linear dimensions are in millimeters (max/min).
1.25
0.425
0.25
1.80
1mm
6-uqfn-3x1.6-QU6-1.0
FIGURE 8: 6-contact Ultra-thin Quad Flat No-lead (UQFN)
SST Package Code: QU6
TABLE 4: Revision History
Revision
Description
Date
00
•
Initial release of data sheet
Sep 2006
01
•
Updated “Features:” on page 1
Sep 2007
©2007 Silicon Storage Technology, Inc.
S71329-01-000
10
09/07
2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
Preliminary Specifications
CONTACT INFORMATION
Marketing
SST Communications Corp.
5340 Alla Road, Ste. 210
Los Angeles, CA 90066
Tel: 310-577-3600
Fax: 310-577-3605
Sales and Marketing Offices
NORTH AMERICA
ASIA PACIFIC NORTH
Silicon Storage Technology, Inc.
Les Crowder
Technical Sales Support - North America
Tel: 949-495-6437
Fax: 949-495-6364
E-mail: lcrowder@sst.com
SST Macao
H. H. Chang
Senior Director, Sales
Room N, 6th Floor,
Macao Finance Center, No. 202A-246,
Rua de Pequim, Macau
Tel: (853) 706-022
Fax: (853) 706-023
E-mail: hchang@sst.com
EUROPE
ASIA PACIFIC SOUTH
Silicon Storage Technology Ltd.
Ralph Thomson
Director, Field Applications Engineering
Mark House
9-11 Queens Road
Hersham KT12 5LU UK
Tel: +44 (0) 1869 321 431
Cell: +44 (0) 7787 508 919
E-mail: rthomson@sst.com
SST Communications Co.
Sunny Tzeng
Country Manager
16F-6, No. 75, Sec.1,
Sintai 5th Rd
Sijhih City, Taipei County 22101, Taiwan, R.O.C.
Tel: +886-2-8698-1168
Fax: +886-2-8698-1169
E-mail: stzeng@sst.com
JAPAN
KOREA
SST Japan
Kiyomi Akaba
Country Manager
9F Toshin-Tameike Bldg, 1-1-14 Akasaka,
Minato-ku, Tokyo, Japan 107-0052
Tel: (81) 3-5575-5515
Fax: (81) 3-5575-5516
Email: kakaba@sst.com
SST Korea
Charlie Shin
Country Manager
Rm# 1101 DonGu Root Bldg, 16-2 Sunae-Dong,
Bundang-Gu, Sungnam, Kyunggi-Do
Korea, 463-020
Tel: (82) 31-715-9138
Fax: (82) 31-715-9137
Email: cshin@sst.com
Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036
www.SuperFlash.com or www.sst.com
©2007 Silicon Storage Technology, Inc.
S71329-01-000
11
09/07