Small Signal Transistors,
FETs and Diodes
In Brief . . .
New in this revision is Motorola’s GreenLine portfolio of
devices. They feature energy–conserving traits superior to
those of our existing line of standard parts for the same
usage. GreenLine devices can actually help reduce the
power demands of your products.
Also new are the Small Signal Multi–integrated devices.
These are intended to save board space by reduced part
count and functionality. Four to six devices have been
integrated into one small package.
Also, this section highlights semiconductors that are
the most popular and have a history of high usage for the
most applications.
It covers a wide range of Small Signal plastic and
metal–can semiconductors.
A large selection of encapsulated plastic transistors,
FETs and diodes are available for surface mount and
insertion assembly technology. Plastic packages include
TO–92 (TO–226AA), 1 Watt TO–92 (TO–226AE), SOT–23,
SC–59, SC–70/SOT–323 and SOT–223. Plastic multiples
are available in 14–pin and 16–pin dual in–line packages for
insertion applications: SO–8, SO–14, and SO–16 for
surface mount applications.
Motorola Master Selection Guide
Page
Bipolar Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1–2
Plastic–Encapsulated Transistors . . . . . . . . . . . . . . 5.1–2
Plastic–Encapsulated Multiple Transistors . . . . . . . 5.1–8
Plastic–Encapsulated Surface
Mount Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1–10
Metal–Can Transistors . . . . . . . . . . . . . . . . . . . . . . 5.1–18
Field–Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . 5.1–20
JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1–20
MOSFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1–22
Surface Mount FETs . . . . . . . . . . . . . . . . . . . . . . . . 5.1–23
Tuning and Switching Diodes . . . . . . . . . . . . . . . . . . . 5.1–25
Tuning Diodes — Abrupt Junction . . . . . . . . . . . . . 5.1–25
Tuning Diodes — Hyper–Abrupt Junction . . . . . . 5.1–29
Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1–33
Switching Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1–35
Multiple Switching Diodes . . . . . . . . . . . . . . . . . . . . 5.1–39
GreenLine Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1–41
Small Signal Multi–integrated Devices . . . . . . . . . . . . 5.1–43
5.1–1
Small Signal Transistors, FETs and Diodes
Bipolar Transistors
Plastic–Encapsulated
Transistors
1
23
CASE 29–05
TO–226AE
1–WATT (TO–92)
Motorola’s Small Signal TO–226 plastic transistors
encompass hundreds of devices with a wide variety of
characteristics for general–purpose, amplifier and switching
applications. The popular high–volume package combines
proven reliability, performance, economy and convenience to
provide the perfect solution for industrial and consumer design
problems. All devices are laser marked for ease of
identification and shipped in antistatic containers, as part of
Motorola’s ongoing practice of maintaining the highest
standards of quality and reliability.
1
23
CASE 29–04
TO–226AA
(TO–92)
Table 1. Plastic–Encapsulated General–Purpose Transistors
These general–purpose transistors are designed for small–signal amplification from dc to low ratio frequencies. They are
also useful as oscillators and general–purpose switches. Complementary devices shown where available (Tables 1–4).
NPN
PNP
V(BR)CEO
Volts
Min
fT @ IC
MHz
Min
hFE @ IC
mA
IC
mA
Max
Min
Max
10
10
10
10
10
10
10
50
10
10
10
10
10
10
10
5.0
20
20
20
50
10
10
10
10
10
10
10
10
10
500
500
250
100
100
100
500
600
100
100
800
100
100
100
100
100
600
600
600
1000
200
200
100
100
100
100
200
200
800
100
100
60
120
120
180
100
100
120
200
100
120
120
180
380
40
100
100
50
50
50
100
110
120
200
420
50
120
100
300
—
400
450
220
450
—
300
500
460
630
800
220
450
800
400
300
300
150
—
150
300
800
220
450
800
150
360
630
mA
NF
dB
Max
Style
1.0
100
10
2.0
2.0
2.0
100
150
2.0
2.0
100
2.0
2.0
2.0
2.0
5.0
150
150
150
500
10
10
2.0
2.0
2.0
2.0
2.0
2.0
100
—
—
—
10
10
10
—
—
10
10
—
10
10
10
10
—
—
—
—
—
6.0
5.0
10
10
10
10
6.0
4.0
—
1
1
1
17
17
17
1
1
14
17
17
17
17
17
17
1
1
1
1
1
1
1
17
17
17
17
1
1
17
Case 29–04 — TO–226AA (TO–92)
MPS8099
MPSA06
2N4410
BC546
BC546A
BC546B
MPSA05
—
BC182
BC237B
BC337
BC547
BC547A
BC547B
BC547C
MPSA20
MPS2222A
2N4401
2N4400
MPS6602
2N3903
2N3904
BC548
BC548A
BC548B
BC548C
2N4123
2N4124
BC338
MPS8599
MPSA56
—
BC556
—
BC556B
MPSA55
MPS2907A
BC212
BC307B
BC327
BC557
BC557A
BC557B
BC557C
MPSA70
—
2N4403
2N4402
MPS6652
2N3905
2N3906
—
—
BC558B
—
2N4125
2N4126
BC328
80
80
80
65
65
65
60
60
50
45
45
45
45
45
45
40
40
40
40
40
40
40
30
30
30
30
30
25
25
150
100
60
150
150
150
100
200
200(1)
150
210(1)
150
150
150
150
125
300
200
150
100
200
250
300(1)
300(1)
300(1)
300
200
250
210(1)
(1) Typical
Devices listed in bold, italic are Motorola preferred devices.
Small Signal Transistors, FETs and Diodes
5.1–2
Motorola Master Selection Guide
Plastic–Encapsulated Transistors (continued)
Table 1. Plastic–Encapsulated General–Purpose Transistors (continued)
NPN
PNP
V(BR)CEO
Volts
Min
fT @ IC
MHz
Min
hFE @ IC
VCE(sat) @ IC @ IB
mA
IC
A
Max
Min
Max
mA
Volts
Max
mA
mA
Style
200
200
200
200
200
0.5
0.5
0.5
0.5
0.5
40
40
40
80
80
400
400
400
—
—
100
100
100
50
50
0.7
0.7
0.7
0.5
0.4
1000
1000
1000
250
250
100
100
100
10
10
1
14
1
1
1
Case 29–05 — TO–226AE (1–WATT TO–92)
BDC01D
BDB01C
MPS6717
MPSW06
BDB02D
BDC02D
BDB02C
MPSW56
100
100
80
80
80
50
50
50
50
50
Table 2. Plastic–Encapsulated Low–Noise and Good hFE Linearity
These devices are designed to use on applications where good hFE linearity and low–noise characteristics are required:
Instrumentation, hi–fi preamplifier.
hFE @ IC
NPN
PNP
V(BR)CEO
Volts
Min
Max
mA
250
150
250
120
180
380
500
100
250
200
380
350
450
300
800
500
650
800
450
800
—
300
—
450
800
—
—
600
0.1
0.1
0.1
2.0
2.0
2.0
1.0
10
10
2.0
2.0
1.0
1.0
2.0
VT(4)
mV
Typ
NF(5)
dB
Max
fT
MHz
Typ
—
—
7.0(7)
2.0
3.0
3.5(8)
2.0(1)
40(2)
40(2)
100(2)
Style
Case 29–04 — TO–226AA (TO–92)
—
—
MPS6428
BC239
BC550B
BC550C
MPSA18
MPS3904
—
BC549B
BC549C
2N5088
2N5089(6)
MPS6521
(1)
(2)
(4)
(5)
(7)
(8)
2N5087
2N5086
—
—
BC560B
BC560C
—
MPS3906
MPS4250
BC559B
BC559C
—
—
MPS6523
50
50
50
45
45
45
45
40
40
30
30
30
25
25
9.5
—
—
6.5(1)
—
—
—
—
—
—
—
2.5
2.5
—
5.0
2.0
2.5
2.5
3.0
2.0
3.0
280
250
250
160
200(2)
—
250
250
50
50
—
1
1
1
17
17
17
1
1
1
17
17
1
1
1
Typical
Min
VT : Total Input Noise Voltage (see BC413/BC414 and BC415/BC416 Data Sheets) at RS = 2.0 kΩ , IC = 200 µA, VCE = 5.0 Volts.
NF: Noise Figure at RS = 2.0 kΩ, IC = 200 µA, VCE = 5.0 Volts. f = 30 Hz to 15 kHz.
RS = 10 kΩ , BW = 1.0 Hz, f = 100 MHz
RS = 500 Ω , BW = 1.0 Hz, f = 10 MHz
Devices listed in bold, italic are Motorola preferred devices.
Motorola Master Selection Guide
5.1–3
Small Signal Transistors, FETs and Diodes
Plastic–Encapsulated Transistors (continued)
Table 3. Plastic–Encapsulated Darlington Transistors
Darlington amplifiers are cascade transistors used in applications requiring very high–gain and input impedance. These
devices have monolithic construction.
hFE @ IC
NPN
PNP
VCE(sat) @ IC & IB
fT @ IC
Min
Max
mA
Volts
Max
mA
mA
Min
mA
S l
Style
1000
1000
25K
20K
150K
—
200
100
1.5
1.5
1000
100
2.0
0.1
100
125
200
10
1
1
500
1000
500
1000
500
500
500
500
500
1000
10K
10K
10K
10K
10K
20K
30K
20K
10K
30K
—
160K
—
50K
—
200K
300K
—
—
—
100
100
100
200
100
100
100
100
100
20
1.5
1.1
1.5
1.1
1.5
1.5
1.5
1.5
1.5
1.0
100
250
100
200
100
500
500
100
100
100
0.1
0.25
0.1
0.2
0.1
0.5
0.5
0.1
0.1
0.1
125
100
—
150
—
—
125
125
125
200(1)
10
100
—
500
—
—
10
10
10
10
1
1
1
17
1
1
1
1
1
17
V(BR)CEO
Volts
IC
Max
Case 29–05 — TO–226AE (1–WATT TO–92)
MPSW45A
—
—
MPSW64
50
30
Case 29–04 — TO–226AA (TO–92)
MPSA29
BC373
MPSA27
BC618
—
2N6427
2N6426
MPSA14
MPSA13
BC517
—
—
MPSA77
—
MPSA75
—
—
MPSA64
MPSA63
—
100
80
60
55
40
40
40
30
30
30
Table 4. Plastic–Encapsulated High–Current Transistors
The following table is a listing of devices that are capable of handling a higher current range for small–signal transistors.
NPN
PNP
V(BR)CEO
Volts
Min
fT @ IC
hFE @ IC
mA
IC
mA
Max
Min
Max
—
50
—
50
1000
1000
50
50
200/150(1)
60
75
75
65
50
10
50
50
10
1000
500
2000
2000
1000
60
40
75
75
60
MHz
Min
VCE(sat) @ IC & IB
mA
Volts
Max
mA
mA
Style
—
—
1000
1000
0.5
0.5/0.7
1000
1000
100
100
1
1
400
160
—
—
—
100
150
1000
1000
1000
0.3/0.5
0.5
0.5
0.5
0.5
1000
500
2000
2000
1000
100
50
200
200
100
17
14
1
1
1
Case 29–05 — TO–226AE (1–WATT TO–92)
MPS6715
MPSW01A
MPS6727
MPSW51A
40
40
Case 29–04 — TO–226AA (TO–92)
BC489
BC639
MPS651
MPS650
BC368
BC490
BC640
MPS751
MPS750
BC369
80
80
60
40
20
(1) Typical
Devices listed in bold, italic are Motorola preferred devices.
Small Signal Transistors, FETs and Diodes
5.1–4
Motorola Master Selection Guide
Plastic–Encapsulated Transistors (continued)
Table 5. Plastic–Encapsulated High–Voltage Amplifier Transistors
These high–voltage transistors are designed for driving neon bulbs and indicator tubes, for direct line operation, and for
other applications requiring high–voltage capability at relatively low collector current. These devices are listed in order of
decreasing breakdown voltage (V(BR)CEO).
Device
Type
V(BR)CEO
Volts
Min
hFE @ IC
IC
Amp
Max
Min
VCE(sat) @ IC & IB
fT @ IC
Volts
Max
mA
mA
MHz
Min
mA
Style
2.0
0.5
20
20
2.0
2.0
60
50
10
10
14
1
30
0.5
20
2.0
50
10
1
10
100
30
10
10
10
0.5
0.75
0.3
0.2
0.5
0.15
10
50
10
20
20
10
1.0
5.0
1.0
2.0
2.0
1.0
—
—
40
50
50
100
—
—
10
10
10
10
1
1
1
1
1
1
10
30
10
30
10
20
0.3
0.5
0.3
0.2
20
10
20
10
10
2.0
1.0
2.0
1.0
1.0
50
40
50
40
100
10
10
10
10
10
1
1
1
1
1
mA
Case 29–05 — TO–226AE (1–WATT TO–92) — NPN
BDC05
MPSW42
300
300
0.5
0.5
40
40
25
30
Case 29–05 — TO–226AE (1–WATT TO–92) — PNP
MPSW92
300
0.5
25
Case 29–04 — TO–226AA (TO–92) — NPN
BF844
MPSA44
2N6517
BF393
MPSA42
2N5551
400
400
350
300
300
160
0.3
0.3
0.5
0.5
0.5
0.6
50
40
30
40
40
80
Case 29–04 — TO–226AA (TO–92) — PNP
BF493S
2N6520
MPSA92
2N6519
2N5401
350
350
300
300
150
0.5
0.5
0.5
0.5
0.6
40
30
40
45
60
Case 29–04 — TO–226AA (TO–92)
NPN
BF420
BF422
PNP
hFE @ IC
VCE(sat) @ IC & IB
fT @ IC
V(BR)CEO
Volts
Min
IC
Amp
Cont
Min
mA
Volts
Max
mA
mA
MHz
Min
mA
Style
300
250
0.5
0.5
50
50
25
25
2.0
2.0
20
20
2.0
2.0
60
60
10
10
14
14
BF421
BF423
Devices listed in bold, italic are Motorola preferred devices.
Motorola Master Selection Guide
5.1–5
Small Signal Transistors, FETs and Diodes
Plastic–Encapsulated Transistors (continued)
Table 6. Plastic–Encapsulated RF Transistors
The RF transistors are designed for small–signal amplification from RF to VHF/UHF frequencies. They are also used as
mixers and oscillators in the same frequency ranges.
Device
Type
V(BR)CEO
Volts
Min
hFE @ IC
IC
mA
Max
Min
mA
VCE
V
7.0
8.0
4.0
3.0
50
4.0
4.0
7.0
20
5.0
8.0
3.0
8.0
10
10
10
10
10
5.0
10
10
10
10
10
10
1.0
10
5.0
5.0
10
10
10
fT
MHz
Typ
CRE/CRB
pF
Max
NF
dB
Typ
600
400(2)
400(2)
400(2)
500(2)
650(2)
650(2)
2.5
—
—
3.2(3)
800
1200(2)
0.28
0.36
0.65
0.3
—
0.9
0.65
0.35
0.65
0.9
1.7
—
1.7
1.3
600(2)
2000(2)
0.85
0.3
f
MHz
Style
—
100
—
—
100
—
—
—
35
200
200
60
200
60
—
21
2
2
1
1
2
2
21
21
2
1
1
1
1
—
—
—
—
2
1
Case 29–04 — TO–226AA (TO–92) — NPN
BF224
MPSH24
MPSH20
MPSH07A(9)
MPS3866
MPSH11
MPSH10
BF199
BF959
MPSH17
MPS918
MPS5179
MPS3563
MPS6595
30
30
30
30
30
25
25
25
20
15
15
12
12
12
50
50
100
25
400
—
—
100
100
—
50
50
50
50
30
30
25
20
10
60
60
40
40
25
20
25
20
25
750
600(2)
800(2)
600(2)
2000(3)
—
—
—
2.5
3.0
6.0(3)
6.0(3)
5.0(3)
6.0(3)
Case 29–04 — TO–266AA (TO–92) — PNP
MPSH81
MPSH69
20
15
50
50
60
30
Table 7. Plastic–Encapsulated High–Speed Saturated Switching Transistors
ton & toff @ IC
Device
Type
ns
Max
ns
Max
mA
V(BR)CEO
Volts
Min
hFE @ IC
VCE(sat) @ IC & IB
fT @ IC
Min
mA
Volts
Max
mA
mA
MHz
Min
mA
Style
15
12
15
15
40
100
30
40
10
10
30
10
0.22
0.22
0.2
0.2
10
10
30
10
1.0
1.0
3.0
1.0
300
300
350
—
10
10
30
—
1
1
1
1
12
30
50
0.15
10
1.0
700
10
1
Case 29–04 — TO–226AA (TO–92) — NPN
2N4264
2N4265
MPS3646
MPS2369A
25
25
18
12
35
35
28
18
10
10
300
10
Case 29–04 — TO–226AA (TO–92) — PNP
MPS4258
15
20
10
(2) Min
(3) Max
(9) AGC Capable
Devices listed in bold, italic are Motorola preferred devices.
Small Signal Transistors, FETs and Diodes
5.1–6
Motorola Master Selection Guide
Plastic–Encapsulated Transistors (continued)
Table 8. Plastic–Encapsulated Choppers
Devices are listed in decreasing V(BR)EBO.
Device
Type
V(BR)EBO
Volts
Min
IC
Amp(1)
Max
hFE @ IC
Min
VCE(sat) @ IC & IB
fT @ IC
mA
Volts
Max
mA
mA
MHz
Min
mA
Style
Case 29–04 — TO–226AA (TO–92) — NPN
MPSA17
15
100
200
5.0
0.25
10
1.0
80
5.0
1
MPSA16
12
100
200
5.0
0.25
10
1.0
100
5.0
1
–12
–0.2
–24
1.0
—
—
1
Case 29–04 — TO–266AA (TO–92) — PNP
MPS404A
–25
–150
30
Table 9. Plastic–Encapsulated Telecom Transistors
These devices are special product ranges intended for use in telecom applications.
Device
Type
V(BR)CEO
Volts
PD mW
25°C
Amb
hFE @ IC @ VCE
fT
IC
mA
Cont
Min
Max
mA
Volts
MHz
Min
Style
600
500
75
25
—
—
10
1.0
10
10
300
40
17
1
600
500
100
40
—
—
10
1.0
10
10
200
40
17
1
Case 29–04 — TO–226AA (TO–92) — NPN
P2N2222A
PBF259,S(10)
40
300
625
625
Case 29–04 — TO–226AA (TO–92) — PNP
P2N2907A
PBF493,S(11)
60
300
625
625
(1) Typical
(10) “S” version, h
FE Min 60 @ IC = 20 mA, VCE = 10 V.
(11) “S” version, h
FE Min 40 @ IC = 0.1 mA, VCE = 1.0 V.
Devices listed in bold, italic are Motorola preferred devices.
Motorola Master Selection Guide
5.1–7
Small Signal Transistors, FETs and Diodes
Plastic–Encapsulated
Multiple Transistors
The manufacturing trend has been toward printed circuit
board design with requirements for smaller packages with
more functions. In the case of discrete components the use of
the multiple device package helps to reduce board space
requirements and assembly costs.
Many of the most popular devices are offered in the
standard plastic DIP and surface mount IC packages. This
includes small–signal NPN and PNP bipolar transistors,
N–channel and P–channel FETs, as well as diode arrays.
14
1
CASE 646–06
(TO–116)
STYLE 1
16
1
CASE 751B–05
SO–16
STYLE 4
Specification Tables
The following short form specifications include Quad and Dual transistors listed in alphanumeric order. Some columns
denote two different types of data indicated by either bold or italic typeface. See key and headings for proper identification.
This applies to Table 10 and 11 of this section only.
KEY
TYPE NO.
ID
hFE2
ton
ns
Max
toff
ns
Max
Unit
Subscript
PD
Watts
One
Die
Only
∆VBE
mV
Max
hFE1
Ref. Point
VCE
Volts
Alphanumeric listing
type numbers
Identification Code
First Letter: Polarity
C — both types in multiple device
N — NPN
P — PNP
Second Letter: Use
A — General Purpose Amplifier
E — Low Noise Audio Amplifier
F — Low Noise RF Amplifier
G — General Purpose Amplifier
and Switch
H — Tuned RF/IF Amplifier
M — Differential Amplifier
S — High Speed Switch
D — Darlington
Power Dissipation specified at 25°C. Single
die rating.
Ref. Point: A — Ambient Temperature
C — Case Temperature
Small Signal Transistors, FETs and Diodes
IC
Amp
Max
hFE @ IC
Min
fT
MHz
Min
Common–emitter
DC Current Gain.
Units for test Current:
A — ampere
m — mA
u — µA
Current–Gain–Bandwidth
Product
Continuous (DC) Collector Current
Rated Minimum Collector–Emitter Voltage
Subscript letter identifies base termination
listed below in order of preference.
SUBSCRIPT:
0 — VCEO, open
5.1–8
Cob
pF
Max
Gp
dB
Min
VCE @
(sat)
Volts
Max
NF @
dB
Max
IC
f
& IC
Unit
IB
Gp — Power Gain
NF — Noise Figure
f — Test Frequency
AUD — 10–15 kHz
Frequency Units:
HĂ— HertząMĂ— MHz
K — kHz
G — GHz
VCE(sat) — Collector–Emitter
Saturation Voltage
IC — Test Current
Current Units: u — µA
m — mA
A — Amp
hFE1/hFE2 — Current Gain Ratio
VBE — Differential Base Voltage |VBE1 — VBE2|.
Differential Amplifiers
ton — turn–on time
toff — turn–off time
Output Capacitance, common–base. Shown without distinction:
Ccb — Collector–Base Capacitance
Cre — Common–Emitter Reverse Transfer Capacitance
Motorola Master Selection Guide
Plastic–Encapsulated Multiple Transistors (continued)
Table 10. Plastic–Encapsulated Multiple Transistors — Quad
The following table is a listing of the most popular multiple devices available in the plastic DIP package. These devices are
available in NPN, PNP, and NPN/PNP configurations. (See note.)
hFE2
∆VBE
mV
Max
ton
ns
Max
toff
ns
Max
8.0
4.0
35(1)
9.0(1)
285(1)
15(1)
0.3
0.25
10
10
3.0(1)
2.0(1)
8.0
25
10
15
4.0
4.0
4.0
4.5
8.0
8.0
4.0
8.0
8.0
8.0
4.0
4.5
4.5
5.0
5.0
6.0
5.0
45(1)
40
35
50
180(1)
90
60
120
0.4
0.5
0.45
0.55
10
10
10
10
3.0(1)
2.0(1)
37(1)
43(1)
30(1)
30(1)
136(1)
155(1)
225(1)
225(1)
0.2
0.25
0.4
0.4
10
10
10
10
4.0(1)
—
30(1)
30(1)
0.8
—
225(1)
225(1)
20
45
150
1.5
0.4
0.4
0.25
0.25
0.15
0.5
0.5
0.7
0.5
10
10
10
10
10
10
10
10
10
10
hFE1
Device
ID
PD
Watts
One
Die
Only
VCEO
Volts
0.65
0.5
0.625
0.625
0.65
0.75
1.0
0.75
0.625
0.625
0.5
0.5
0.65
0.65
0.5
0.5
0.65
0.65
0.5
0.5
0.75
0.75
0.75
0.75
0.75
40
15
40
40
60
40
40
40
40
60
40
40
30
30
45
30
30
30
45
40
40
250
200
150
250
IC
Amp
Max
hFE @ IC
Min
fT
MHz
Min
Cob
pF
Max
NF @
dB
Max
Typ(1)
Gp
dB
Min
VCE
(sat)
Volts
Max
@
f
IC
IC
IB
Case 646–06 — TO–116
MPQ2222A
MPQ2369
MPQ2483
MPQ2484
MPQ2907A
MPQ3467
MPQ3725
MPQ3762
MPQ3798
MPQ3799
MPQ3904
MPQ3906
MPQ6001
MPQ6002
MPQ6100A
MPQ6426
MPQ6501
MPQ6502
MPQ6600A1
MPQ6700
MPQ6842
MPQ7043
MPQ7042
MPQ7051
MPQ7093
NA
NS
NA
NA
PA
PS
NS
PS
PA
PA
NG
PG
CG
CG
CA
ND
CG
CG
CA
CA
CA
NA
NA
CG
PA
0.5
0.5
0.05
0.05
0.6
1.0
1.0
1.5
0.05
0.05
0.2
0.2
0.5
0.5
0.05
0.5
0.5
0.5
0.05
0.2
0.5
0.5
0.5
0.5
0.5
100
40
150
300
100
20
25
35
150
300
75
75
40
100
150
10K
40
100
150
70
70
25
25
25
25
150 m
10 m
1.0 m
1.0 m
150 m
500 m
500 m
150 m
0.1 m
0.1 m
10 m
10 m
150 m
150 m
1.0 m
100 m
150 m
150 m
1.0 m
10 m
10 m
1.0 m
1.0 m
1.0 m
1.0 m
200
450
50
50
200
125
250
150
60
60
250
200
200
200
50
125
200
200
50
200
300
50
50
50
50
150 m
10 m
AUD
AUD
150 m
500 m
500 m
500 m
AUD
AUD
10 m
10 m
150 m
150 m
AUD
100 m
150 m
150 m
1.0 m
1.0 m
0.5 m
20 m
20 m
20 m
20 m
Table 11. Plastic–Encapsulated Multiple Transistors — Quad Surface Mount
The following table is a listing of the most popular multiple devices available in the plastic SOIC surface mount package.
These devices are available in NPN, PNP, and NPN/PNP configurations.
hFE @ IC
D i
Device
fT @ IC
V(BR)CEO
V(BR)CBO
Min
mA
MHz Min
mA
40
15
50
40
40
60
40
40
40
75
40
60
40
60
60
60
40
40
40
20
50
20
25
300
75
75
70
500
100
500
500
500
0.5
10
10
10
200
450
200
125
250
60
250
200
200
20
10
50
50
50
1.0
10
10
10
Case 751B–05 — SO–16
MMPQ2222A
MMPQ2369
MMPQ2907A
MMPQ3467
MMPQ3725
MMPQ3799
MMPQ3904
MMPQ3906
MMPQ6700 (12)
(1) Typical
(12) NPN/PNP
NOTE: Some columns show 2 different types of data indicated by either bold or italic typefaces. See key and headings.
Devices listed in bold, italic are Motorola preferred devices.
Motorola Master Selection Guide
5.1–9
Small Signal Transistors, FETs and Diodes
Plastic–Encapsulated
Surface Mount Transistors
1
1
1
This section of the selector guide lists the small–signal plastic
devices that are available for surface mount applications.
These devices are encapsulated with the latest
state–of–the–art mold compounds that enhance reliability and
exhibit excellent performance in high temperature and high
humidity environments. This package offers higher power
dissipation capability for small–signal applications.
4
3
3
2
CASE 318–08
TO–236AB
SOT–23
CASE 318D–04
SC–59
6
3
1
1
2
CASE 419–02
SC–70/SOT–323
2
2
5
2
3
CASE 318E–04
SOT–223
3
4
3
CASE 419B–01
SOT–363
1
2
CASE 463–01
SOT–416/SC–90
Table 12. Plastic–Encapsulated Surface Mount General–Purpose Transistors
The following tables are a listing of small–signal general–purpose transistors in the SOT–23, SC–59, SOT–223, SC–70,
SC–90, and SOT–363 surface mount packages. These devices are intended for small–signal amplification for DC, audio,
and lower RF frequencies. They also have applications as oscillators and general–purpose, low voltage switches.
Pinout: 1–Base, 2–Emitter, 3–Collector
Devices are listed in order of descending breakdown voltage.
hFE @ IC
D i
Device
M ki
Marking
V(BR)CEO
Min
Max
mA
fT
MHz Min
110
200
100
160
250
110
200
420
100
100
100
110
200
420
220
450
250
400
600
220
450
800
300
300
300
220
450
800
2.0
2.0
100
100
100
2.0
2.0
2.0
150
10
150
2.0
2.0
2.0
100
100
200
200
200
100
100
100
200
200
250
100
100
100
100
125
220
100
100
160
250
125
220
100
100
125
220
420
300
250
475
300
250
400
600
250
475
300
300
250
475
800
1.0
2.0
2.0
150
100
100
100
2.0
2.0
10
150
2.0
2.0
2.0
150
100
100
200
200
200
200
100
100
250
200
100
100
100
Case 318–08 — TO–236AB (SOT–23) — NPN
BC846ALT1
BC846BLT1
BC817–16LT1
BC817–25LT1
BC817–40LT1
BC847ALT1
BC847BLT1
BC847CLT1
MMBT2222ALT1
MMBT3904LT1
MMBT4401LT1
BC848ALT1
BC848BLT1
BC848CLT1
1A
1B
6A
6B
6C
1E
1F
1G
1P
1AM
2X
1J
1K
1L
65
65
45
45
45
45
45
45
40
40
40
30
30
30
Case 318–08 — TO–236AB (SOT–23) — PNP
MMBT8599LT1
BC856ALT1
BC856BLT1
MMBT2907ALT1
BC807–16LT1
BC807–25LT1
BC807–40LT1
BC857ALT1
BC857BLT1
MMBT3906LT1
MMBT4403LT1
BC858ALT1
BC858BLT1
BC858CLT1
2W
3A
3B
2F
5A
5B
5C
3E
3F
2A
2T
3J
3K
3L
80
65
65
60
45
45
45
45
45
40
40
30
30
30
Devices listed in bold, italic are Motorola preferred devices.
Small Signal Transistors, FETs and Diodes
5.1–10
Motorola Master Selection Guide
Plastic–Encapsulated Surface Mount Transistors (continued)
Table 12. Plastic–Encapsulated Surface Mount General–Purpose Transistors (continued)
Pinout: 1–Base, 2–Emitter, 3–Collector
Devices are listed in order of descending breakdown voltage.
hFE @ IC
D i
Device
M ki
Marking
V(BR)CEO
Min
Max
mA
fT
MHz Min
25
25
25
20
210
290
120
200
340
460
240
350
2.0
2.0
150
500
150(1)
150(1)
200(1)
200(1)
25
25
25
25
210
290
85
120
340
460
170
240
2.0
2.0
150
150
100(1)
100(1)
200(1)
200(1)
45
45
45
65
65
45
45
45
30
30
30
40
40
20
50
100
160
250
110
200
110
200
420
110
200
420
100
100
70
210
600
400
600
220
450
220
450
800
220
450
800
300
300
140
340
100
100
100
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
150
10
1.0
2.0
—
—
—
100
100
100
100
100
100
100
100
300
300
150
—
45
45
65
65
45
45
30
30
30
60
40
45
160
250
125
220
125
220
110
200
420
100
100
210
400
600
250
475
250
475
220
450
800
300
300
340
100
100
2.0
2.0
2.0
2.0
2.0
2.0
2.0
150
10
2.0
—
—
100
100
100
100
100
100
100
200
250
—
40
40
100
100
300
300
10
10
300
300
– 40
– 40
100
100
300
300
10
10
250
250
Case 318D–04 — SC–59 — NPN
MSD601–RT1
MSD601–ST1
MSD602–RT1
MSD1328–RT1
YR
YS
WR
1DR
Case 318D–04 — SC–59 — PNP
MSB709–RT1
MSB709–ST1
MSB710–QT1
MSB710–RT1
AR
AS
CQ
CR
Case 419–02 — SC–70/SOT–323 —NPN
BC818WT1
BC818–25WT1
BC818–40WT1
BC846AWT1
BC846BWT1
BC847AWT1
BC847BWT1
BC847CWT1
BC848AWT1
BC848BWT1
BC848CWT1
MMBT2222AWT1
MMBT3904WT1
MSC3930–BT1
MSD1819A–RT1
6I
6F
6G
1A
1B
1E
1F
1G
1J
1K
1L
1P
AM
VB
ZR
Case 419–02 — SC–70/SOT–323 —PNP
BC808–25WT1
BC808–40WT1
BC856AWT1
BC856BWT1
BC857AWT1
BC857BWT1
BC858AWT1
BC858BWT1
BC858CWT1
MMBT2907AWT1
MMBT3906WT1
MSB1218A–RT1
5F
6F
3A
3B
3E
3F
3J
3K
3L
20
2A
BR
Case 419B–01 — SOT–363 — Dual NPN
MBT3904DW1T1
MBT3904DW9T1
MA
MB
Case 419B–01 — SOT–363 — Dual PNP
MBT3906DW1T1
MBT3906DW9T1
A2
A3
(1) Typical
Devices listed in bold, italic are Motorola preferred devices.
Motorola Master Selection Guide
5.1–11
Small Signal Transistors, FETs and Diodes
Plastic–Encapsulated Surface Mount Transistors (continued)
Table 12. Plastic–Encapsulated Surface Mount General–Purpose Transistors (continued)
Pinout: 1–Base, 2–Emitter, 3–Collector
Devices are listed in order of descending breakdown voltage.
hFE @ IC
D i
Device
M ki
Marking
V(BR)CEO
Min
Max
mA
fT
MHz Min
Case 419B–01 — SOT–363 — Dual Combination NPN and PNP
MBT3946DW1T1
46
40
100
300
10
250
50
120
560
1.0
180
50
120
560
1.0
140
Case 463–01 — SOT–416/SC–90 — NPN
2SC4617
B9
Case 463–01 — SOT–416/SC–90 — PNP
2SA1774
F9
C
(OUT)
B
(IN)
Table 13. Plastic–Encapsulated Surface Mount Bias Resistor Transistors
Table 13. for General Purpose Applications
R1
R2
E
(GND)
Pinout: 1–Base, 2–Emitter, 3–Collector
These devices include bias resistors on the semiconductor chip with the transistor. See the BRT diagram for orientation
of resistors.
NPN
NPN
PNP
8A
8B
8C
8D
8E
8F
8G
8H
8J
8K
8L
6A
6B
6C
6D
6E
6F
6G
6H
6J
6K
6L
50
50
50
50
50
50
50
50
50
50
50
35
60
80
80
160
160
3.0
8.0
15
80
80
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
100
100
100
100
100
100
100
100
100
100
100
10K
22K
47K
10K
10K
4.7K
1.0K
2.2K
4.7K
4.7K
22K
10K
22K
47K
47K
∞
∞
1.0K
2.2K
4.7K
47K
47K
A6A
A6B
A6C
A6D
A6E
A6F
A6G
A6H
A6J
A6K
A6L
50
50
50
50
50
50
50
50
50
50
50
35
60
80
80
160
160
3.0
8.0
15
80
80
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
100
100
100
100
100
100
100
100
100
100
100
10K
22K
47K
10K
10K
4.7K
1.0K
2.2K
4.7K
4.7K
22K
10K
22K
47K
47K
∞
∞
1.0K
2.2K
4.7K
47K
47K
Marking
PNP
hFE@ IC
V(BR)CEO
Volts
(Min)
Device
Min
mA
IC
mA
Max
R1
Ohm
R2
Ohm
Case 318D–04 — SC–59
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
Case 318–08 — TO–236AB (SOT–23)
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
A8A
A8B
A8C
A8D
A8E
A8F
A8G
A8H
A8J
A8K
A8L
Devices listed in bold, italic are Motorola preferred devices.
Small Signal Transistors, FETs and Diodes
5.1–12
Motorola Master Selection Guide
Plastic–Encapsulated Surface Mount Transistors (continued)
Table 13. Plastic–Encapsulated Surface Mount Bias Resistor Transistors
for General Purpose Applications (continued)
Pinout: 1–Base, 2–Emitter, 3–Collector
NPN
NPN
PNP
8A
8B
8C
8D
8E
8F
8G
8H
8J
8K
8L
6A
6B
6C
6D
6E
6F
6G
6H
6J
6K
6L
50
50
50
50
50
50
50
50
50
50
50
35
60
80
80
160
160
3.0
8.0
15
80
80
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
50
50
50
50
50
50
50
50
50
50
50
10K
22K
47K
10K
10K
4.7K
1.0K
2.2K
4.7K
4.7K
22K
10K
22K
47K
47K
∞
∞
1.0K
2.2K
4.7K
47K
47K
7A
7B
7C
7D
7E
7F
7G
7H
7J
7K
7L
7M
8A
8B
8C
8D
8E
8F
8G
8H
8J
8K
8L
8M
50
50
50
50
50
50
50
50
50
50
50
50
35
60
80
80
160
160
3.0
8.0
15
80
80
80
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
100
100
100
100
100
100
100
100
100
100
100
100
10K
22K
47K
10K
10K
4.7K
1.0K
2.2K
4.7K
4.7K
22K
2.2K
10K
22K
47K
47K
∞
∞
1.0K
2.2K
4.7K
47K
47K
47K
Marking
PNP
hFE@ IC
V(BR)CEO
Volts
(Min)
Device
Min
mA
IC
mA
Max
R1
Ohm
R2
Ohm
Case 419–02 — SC–70/SOT–323
MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
Case 419B–01 — SOT–363 Duals
MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
hFE @ IC
D i
Device
M ki
Marking
V(BR)CEO
Min
mA
IC
mA
Max
R1
Ohm
R2
Ohm
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
100
100
100
100
100
100
100
100
100
100
100
100
10K
22K
47K
10K
10K
4.7K
1.0K
2.2K
4.7K
4.7K
22K
2.2K
10K
22K
47K
47K
∞
∞
1.0K
2.2K
4.7K
47K
47K
47K
Case 419B–01 — SOT–363 — Dual Combination NPN and PNP
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
11
12
13
14
15
16
3X
31
32
33
34
35
50
50
50
50
50
50
50
50
50
50
50
50
NPN
PNP
V(BR)CEO
Volts
(Min)
94
69
—
—
59
43
50
50
50
Device
NPN
35
60
80
80
160
160
3.0
8.0
15
80
80
80
Marking
PNP
hFE@ IC
Min
100
80
15
mA
IC
mA
Max
R1
Ohm
R2
Ohm
1.0
5.0
5.0
100
100
100
10K
10K
4.7K
∞
47K
4.7K
Case 463–01 — SOT–416/SC–90
DTC114TE
DTC114YE
—
—
DTA114YE
DTA143EE
Devices listed in bold, italic are Motorola preferred devices.
Motorola Master Selection Guide
5.1–13
Small Signal Transistors, FETs and Diodes
Plastic–Encapsulated Surface Mount Transistors (continued)
Table 14. Plastic–Encapsulated Surface Mount Switching Transistors
The following tables are a listing of devices intended for high–speed, low saturation voltage, switching applications. These
devices have very fast switching times and low output capacitance for optimized switching performance.
Pinout: 1–Base, 2–Emitter, 3–Collector
hFE@ IC
Switching Time (ns)
D i
Device
M ki
Marking
toff
V(BR)CEO
Min
Max
mA
fT
MHz Min
18
18
18
15
15
12
20
20
40
—
—
120
100
100
10
—
—
400
25
35
12
20
—
50
500
20
40
20
40
180
1.0
200
ton
Case 318–08 — TO–236AB (SOT–23) — NPN
MMBT2369LT1
MMBT2369ALT1
BSV52LT1
M1J
1JA
B2
12
12
12
Case 318–08 — TO–236AB (SOT–23) — PNP
MMBT3640LT1
2J
Pinout: 1–Emitter, 2–Base, 3–Collector
Case 318D–04 — SC–59 — NPN
MSC1621T1
RB
Table 15. Plastic–Encapsulated Surface Mount VHF/UHF Amplifiers, Mixers, Oscillators
The following table is a listing of devices intended for small–signal RF amplifier applications to VHF/UHF frequencies. These
devices may also be used as VHF/UHF oscillators and mixers.
Pinout: 1–Base, 2–Emitter, 3–Collector
D i
Device
M ki
Marking
fT @ IC
V(BR)CEO
Ccb(13)
pF Max
GHz Min
mA
25
15
30
0.7
1.7(14)
0.45
0.65
0.6
0.4
4.0
4.0
8.0
20
15
0.85
0.35(13)
0.6
2.0
5.0
10
20
20
20
10
1.5(13)
1.5(13)
1.0(13)
—
0.15
0.15
0.45
1.4
1.0
1.0
1.0
5.0
20
20
2.0(13)
2.0(13)
0.15
0.15
1.0
1.0
20
0.85(13)
0.6
5.0
Case 318–08 — TO–236AB (SOT–23) — NPN
MMBTH10LT1
MMBT918LT1
MMBTH24LT1
3EM
M3B
M3A
Case 318–08 — TO–236AB (SOT–23) — PNP
MMBTH81LT1
MMBTH69LT1
3D
M3J
Pinout: 1–Emitter, 2–Base, 3–Collector
Case 318D–04 — SC–59 — NPN
MSC2295–BT1
MSC2295–CT1
MSC2404–CT1
MSC3130T1
VB
VC
UC
1S
Case 318D–04 — SC–59 — PNP
MSA1022–BT1
MSA1022–CT1
EB
EC
Case 419–02 — SC–70/SOT–323 — PNP
MSB81T1
J3D
(13) C
re
(14) C
ob
Devices listed in bold, italic are Motorola preferred devices.
Small Signal Transistors, FETs and Diodes
5.1–14
Motorola Master Selection Guide
Plastic–Encapsulated Surface Mount Transistors (continued)
Table 16. Plastic–Encapsulated Surface Mount Choppers
The following table is a listing of small–signal devices intended for chopper applications where a higher than normal
V(BR)CEO is required in the circuit application.
Pinout: 1–Base, 2–Emitter, 3–Collector
hFE @ IC
D i
Device
M ki
Marking
V(BR)CEO
V(BR)EBO
Min
Max
mA
25
30
400
12
Case 318–08 — TO–236AB (SOT–23) — PNP
MMBT404ALT1
2N
35
Table 17. Plastic–Encapsulated Surface Mount Darlingtons
The following table is a listing of small–signal devices that have very high hFE and input impedance characteristics. These
devices utilize monolithic, cascade transistor construction.
Pinout: 1–Base, 2–Emitter, 3–Collector
Devices are listed in order of descending hFE.
D i
Device
M ki
Marking
V(BR)CES
hFE @ IC
VCE(sat)
Volts Max
Min
Max
mA
1.5
1.5
20K
10K
—
—
100
100
1.5
20K
—
100
Case 318–08 — TO–236AB (SOT–23) — NPN
MMBTA14LT1
MMBTA13LT1
1N
1M
30
30
Case 318–08 — TO–236AB (SOT–23) — PNP
MMBTA64LT1
2V
30
Table 18. Plastic–Encapsulated Surface Mount Low–Noise Transistors
The following table is a listing of small–signal devices intended for low noise applications in the audio range. These devices
exhibit good linearity and are candidates for hi–fi and instrumentation equipment.
Pinout: 1–Base, 2–Emitter, 3–Collector
Devices are listed in order of ascending NF.
D i
Device
M ki
Marking
NF
dB Typ
hFE@ IC
V(BR)CEO
Min
Max
mA
fT
MHz Min
25
60
50
45
400
—
250
500
—
800
—
—
10
10
10
10
50
—
100
100
50
250
—
10
40
Case 318–08 — TO–236AB (SOT–23) — NPN
MMBT5089LT1
MMBT2484LT1
MMBT6428LT1
MMBT6429LT1
1R
1U
1KM
1L
2.0(15)
3.0(15)
3.0
3.0
Case 318–08 — TO–236AB (SOT–23) — PNP
MMBT5087LT1
2Q
2.0(15)
(15) Max
Devices listed in bold, italic are Motorola preferred devices.
Motorola Master Selection Guide
5.1–15
Small Signal Transistors, FETs and Diodes
Plastic–Encapsulated Surface Mount Transistors (continued)
Table 19. Plastic–Encapsulated Surface Mount High–Voltage Transistors
The following table is a listing of small–signal high–voltage devices designed for direct line operation requiring high voltage
breakdown and relatively low current capability.
Pinout: 1–Base, 2–Emitter, 3–Collector
Devices are listed in order of descending breakdown voltage.
hFE@ IC
D i
Device
M ki
Marking
V(BR)CEO
Min
Max
mA
fT
MHz Min
15
40
30
—
—
—
100
30
50
40
50
100
15
25
50
—
—
—
100
30
50
40
50
100
Case 318–08 — TO–236AB (SOT–23) — NPN
MMBT6517LT1
MMBTA42LT1
MMBT5551LT1
1Z
1D
G1
350
300
160
Case 318–08 — TO–236AB (SOT–23) — PNP
MMBT6520LT1
MMBTA92LT1
MMBT5401LT1
2Z
2D
2L
350
300
150
Table 20. Plastic–Encapsulated Surface Mount Drivers
The following is a listing of small–signal devices intended for medium voltage driver applications at fairly high current levels.
Pinout: 1–Base, 2–Emitter, 3–Collector
hFE@ IC
D i
Device
M ki
Marking
V(BR)CEO
VCE(sat)
VBE(sat)
Min
Max
mA
0.25
0.15
—
—
100
20
—
—
100
10
– 0.25
– 0.25
– 0.90
—
30
100
—
—
25
100
Case 318–08 — TO–236AB (SOT–23) — NPN
MMBTA06LT1
BSS64LT1
1GM
AM
80
80
Case 318–08 — TO–236AB (SOT–23) — PNP
BSS63LT1
MMBTA56LT1
T1
2GM
100
80
The following devices are designed to conserve energy. They offer ultra–low collector saturation voltage.
Case 318–08 — TO–236AB (SOT–23) — PNP
MMBT1010LT1
GLP
15
0.1
1.1
300
600
100
15
0.1
1.1
300
600
100
Case 318–03 — SC–59 — PNP
MSD1010T1
GLP
Table 21. Plastic–Encapsulated Surface Mount General Purpose Amplifiers
Pinout: 1–Base, 2–Collector, 3–Emitter, 4–Collector
hFE@ IC
D i
Device
M ki
Marking
V(BR)CEO
Min
Max
mA
BH
80
40
250
150
80
40
25
150
Case 318E–04 — SOT–223 — NPN
BCP56T1
Case 318E–04 — SOT–223 — PNP
Pinout: 1–Gate, 2–Drain, 3–Source, 4–Drain
BCP53T1
AH
Devices listed in bold, italic are Motorola preferred devices.
Small Signal Transistors, FETs and Diodes
5.1–16
Motorola Master Selection Guide
Plastic–Encapsulated Surface Mount Transistors (continued)
Table 22. Plastic–Encapsulated Surface Mount Switching Transistors
Pinout: 1–Base, 2–Collector, 3–Emitter, 4–Collector
hFE
Device
M ki
Marking
ton
toff
35
285
45
100
V(BR)CEO
fT
Min
Max
@ IC (mA)
Min (MHz)
40
100
300
20
300
60
100
300
50
200
Case 318E–04 — SOT–223 — NPN
PZT2222AT1
P1F
Case 318E–04 — SOT–223 — PNP
PZT2907AT1
P2F
Table 23. Plastic–Encapsulated Surface Mount Darlingtons
Pinout: 1–Base, 2–Collector, 3–Emitter, 4–Collector
Device
hFE
M ki
Marking
V(BR)CER
VCE(sat)
Max (V)
Min
Max
@ IC (mA)
( A)
AS3
P1N
80
30
1.3
1.5
2000
20k
—
—
500
100
BS3
P2V
90
30
1.3
1.5
2000
20k
—
—
500
100
Case 318E–04 — SOT–223 — NPN
BSP52T1
PZTA14T1
Case 318E–04 — SOT–223 — PNP
BSP62T1
PZTA64T1
Table 24. Plastic–Encapsulated Surface Mount High–Voltage Transistors
Pinout: 1–Base, 2–Collector, 3–Emitter, 4–Collector
hFE
Device
fT
M ki
Marking
V(BR)CEO
Min
Max
@ IC (mA)
Min (MHz)
SP19A
P1D
BF720
SP20A
350
300
250
250
40
40
50
40
—
—
—
—
20
10
10
20
70
50
60
70
ZTA96
P2D
BSP16
BF721
450
300
300
250
50
40
30
50
150
—
150
—
10
10
10
10
50
50
15
60
Case 318E–04 — SOT–223 — NPN
BSP19AT1
PZTA42T1
BF720T1
BSP20AT1
Case 318E–04 — SOT–223 — PNP
PZTA96T1
PZTA92T1
BSP16T1
BF721T1
Table 25. Plastic–Encapsulated Surface Mount High Current Transistors
Pinout: 1–Base, 2–Collector, 3–Emitter, 4–Collector
D i
Device
hFE@ IC
M ki
Marking
V(BR)CEO
VCE(sat)
Volts
651
CA
60
20
0.5
0.5
75
60
—
—
1000
1000
ZT751
CE
60
20
0.5
0.5
75
60
—
—
1000
1000
Min
Max
mA
Case 318E–04 — SOT–223 — NPN
PZT651T1
BCP68T1
Case 318E–04 — SOT–223 — PNP
PZT751T1
BCP69T1
Devices listed in bold, italic are Motorola preferred devices.
Motorola Master Selection Guide
5.1–17
Small Signal Transistors, FETs and Diodes
Metal–Can
Transistors
Metal–can packages are intended for use in industrial
applications where harsh environmental conditions are
encountered. These packages enhance reliability of the end
products due to their resistance to varying humidity and
extreme temperature ranges.
3 2
1
CASE 22–03
TO–206AA
(TO–18)
STYLE 1
3
2 1
CASE 79–04
TO–205AD
(TO–39)
STYLE 1
Table 26. Metal–Can General–Purpose Transistors
These transistors are designed for DC to VHF amplifier applications, general–purpose switching applications, and
complementary circuitry. Devices are listed in decreasing order of V(BR)CEO within each package group.
Device
D
i
Type
V(BR)CEO
Volts
Min
fT @ IC
MHz
Min
hFE @ IC
mA
IC
mA
Max
Min
Max
mA
50
10
10
20
10
1000
200
200
800
200
50
110
200
100
420
—
450
450
300
800
500
2.0
2.0
150
2.0
50
50
10
10
600
600
200
200
40
100
100
180
120
300
300
460
150
150
10
2.0
50
50
50
20
1000
1000
500
800
100
40
40
100
300
120
120
300
150
150
150
150
—
50
50
50
—
1000
1000
600
600
1000
25
40
40
100
40
—
140
120
300
—
1000
150
150
150
1000
Case 22–03 — TO–206AA (TO–18) — NPN
2N3700
BC107
BC107B
2N2222A
BC109C
80
45
45
40
25
80
150
150
300
150
Case 22–03 — TO–206AA (TO–18) — PNP
2N2906A
2N2907A
2N3251A
BC177B
60
60
60
45
200
200
300
200
Case 79–04 — TO–205AD (TO–39) — NPN
2N3019
2N3020
2N1893
2N2219A
80
80
80
40
100
80
50
300
Case 79–04 — TO–205AD (TO–39) — PNP
2N4033
2N4036
2N2904A
2N2905A
2N4032
80
65
60
60
60
—
60
200
200
—
Devices listed in bold, italic are Motorola preferred devices.
Small Signal Transistors, FETs and Diodes
5.1–18
Motorola Master Selection Guide
Metal–Can Transistors (continued)
Table 27. Metal–Can High–Gain/Low–Noise Transistors
These transistors are characterized for high–gain and low–noise applications. Devices are listed in decreasing order of NF.
Device
D
i
Type
NF
Wideband
dB
Typ Max
V(BR)CEO
Volts
Min
fT @ IC
hFE @ IC
IC
mA
Max
Min
Max
µA
mA
MHz
Min
mA
50
30
30
100
—
—
500
600
600
10
10
10
15
45
30
0.05
0.5
0.5
200
50
250
300
600
900
1.0(24)
500
50
30
0.5
0.5
Case 22–03 — TO–206AA (TO–18) — NPN
2N2484
2N930A
2N930
8.0(1)
3.0
3.0
60
45
45
Case 22–03 — TO–206AA (TO–18) — PNP
2N3964
2N3799
4.0
2.5
45
60
Table 28. Metal–Can High–Voltage/High–Current Transistors
The following table lists Motorola standard devices that have high collector–emitter breakdown voltage. Devices are listed in
decreasing order of V(BR)CEO within each package type.
Device
D
i
Type
V(BR)CEO
Volts
Min
hFE @ IC
IC
mA
Max
Min
fT @ IC
VCE(sat) @ IC & IB
mA
Volts
Max
mA
mA
MHz
Min
mA
30
30
0.5
1.0
20
50
2.0
5.0
50
50
10
20
30
0.5
50
5.0
50
20
50
0.5
50
5.0
200
30
Case 22–03 — TO–206AA (TO–18) — NPN
2N6431
BSS73
300
300
50
500
50
40
Case 22–03 — TO–206AA (TO–18) — PNP
BSS76
300
500
35
Case 79–04 — TO–205AD (TO–39) — PNP
2N3637
175
1000
100
(1) Typical
(24) T = 25°C
A
Table 29. Metal–Can Switching Transistors
The following devices are intended for use in general–purpose switching and amplifier applications. Within each package
group shown, the devices are listed in order of decreasing turn–on time (ton).
ton & toff @ IC
Device
D
i
Type
ns
Max
ns
Max
mA
V(BR)CEO
Volts
Min
hFE @ IC
IC
mA
Max
Min
15
15
200
500
40
1000
VCE(sat) @ IC @ IB
mA
fT
MHz
Min
IC
mA
10
10
1.0
1.0
500
500
10
10
500
50
175
50
mA
Volts
Max
mA
40
20
10
10
0.2
0.25
40
500
0.5
Case 22–03 — TO–206AA (TO–18) — NPN
2N2369A
BSX20
12
7.0
18
21
10
100
Case 79–04 — TO–205AD (TO–39) — PNP
2N3467
40
90
500
Devices listed in bold, italic are Motorola preferred devices.
Motorola Master Selection Guide
5.1–19
Small Signal Transistors, FETs and Diodes
Field–Effect Transistors
JFETs
JFETs operate in the depletion mode. They are available in
both P– and N–channel and are offered in both Through–hole
and Surface Mount packages. Applications include general–
purpose amplifiers, switches and choppers, and RF amplifiers
and mixers. These devices are economical and very
rugged. The drain and source are interchangeable on many
typical FETs.
1
CASE 29–04
TO–226AA
(TO–92)
23
Table 30. JFET Low–Frequency/Low–Noise
The following table is a listing of small–signal JFETs intended for low–noise applications in the audio range. These devices
exhibit good linearity and are candidates for hi–fi and instrumentation equipment.
Re Yfs
D i
Device
mmho
Min
@f
Re Yos @ f
µmho
Max
kHz
kHz
IDSS
mA
VGS(off)
Volts
Crss
pF
Max
V(BR)GSS
V(BR)GDO
Volts
Min
Min
Max
Min
Max
S l
Style
—
7.0
6.0
7.0
7.0
—
3.0
3.0
3.0
3.0
40
25
50
25
25
0.8
1.0
—
0.5
2.0
4.0
7.0
4.0
6.0
8.0
0.9
2.0
0.5
1.0
4.0
4.5
9.0
2.5
5.0
16
5
5
5
5
5
7.0
7.0
7.0
2.0
2.0
2.0
40
40
40
0.75
1.0
1.8
6.0
7.5
9.0
1.0
2.0
4.0
5.0
9.0
16
7
7
7
Ciss
pF
Max
Case 29–04 — TO–226AA (TO–92) — N–Channel
J202
2N5458
MPF3821
2N5457
2N5459
—
1.5
1.5
1.0
2.0
—
1.0
1.0
1.0
1.0
—
50
10
50
50
—
1.0
1.0
1.0
1.0
Case 29–04 — TO–226AA (TO–92) — P–Channel
2N5460
2N5461
2N5462
1.0
1.5
2.0
1.0
1.0
1.0
75
75
75
1.0
1.0
1.0
Table 31. JFET High–Frequency Amplifiers
The following is a listing of small–signal JFETs that are intended for hi–frequency applications. These are candidates for
VHF/UHF oscillators, mixers and front–end amplifiers.
Re Yfs @ f
D i
Device
mmho
Min
MHz
Re Yos @ f
µmho
Max
MHz
Ciss
pF
Max
Crss
pF
Max
dB
Max
f
MHz
V(BR)GSS
V(BR)GDO
Volts
Min
—
2.5
3.0
4.0
4.0
1.5(1)
1.5(1)
1.5(1)
—
100
100
400
400
100
100
100
25
25
25
25
25
25
25
25
NF @ RG = 1K
VGS(off)
Volts
IDSS
mA
Min
Max
Min
Max
S l
Style
—
0.2
0.3
0.5
2.0
1.0
1.0
2.0
8.0
4.0
3.0
4.0
6.0
6.5
4.0
6.5
2.0
1.0
1.0
4.0
8.0
12
12
24
20
5.0
5.0
10
20
60
30
60
5
5
5
5
5
5
5
5
Case 29–04 — TO–226AA (TO–92) — N–Channel
MPF102
2N5668
2N5484
2N5485
2N5486
J308
J309
J310
1.6
1.0
2.5
3.0
3.5
12(1)
12(1)
12(1)
100
100
100
400
400
100
100
100
200
50
75
100
100
250(1)
250(1)
250(1)
100
100
100
400
400
100
100
100
7.0
7.0
5.0
5.0
5.0
7.5
7.5
7.5
3.0
3.0
1.0
1.0
1.0
2.5
2.5
2.5
(1) Typical
Devices listed in bold, italic are Motorola preferred devices.
Small Signal Transistors, FETs and Diodes
5.1–20
Motorola Master Selection Guide
JFETs (continued)
Table 32. JFET Switches and Choppers
The following is a listing of JFETs intended for switching and chopper applications.
RDS(on) @ ID
D i
Device
Ω
Max
mA
VGS(off)
Volts
Min
Max
IDSS
mA
Min
Max
V(BR)GSS
V(BR)GDO
Volts
Min
50
50
20
20
20
5.0
25
25
8.0
5.0
5.0
2.0
15
30
60
10
—
—
—
100
100
—
75
—
80
30
—
—
—
80
140
—
40
30
35
40
30
35
30
30
30
30
30
35
25
25
25
25
18
18
28
18
18
28
10
10
18
10
10
28
5.0
—
—
—
8.0
8.0
5.0
8.0
8.0
5.0
3.5
4.0
8.0
3.5
4.0
5.0
1.2
—
—
—
9.0
9.0
—
10
10
—
15
—
20
15
18
—
10
—
—
—
25
25
—
50
50
—
35
—
100
55
45
—
25
—
—
—
5
5
5
5
5
5
5
5
5
5
5
5
5
22
22
5
15
2.0
100
50
30
30
12
12
5.0
5.0
8.0
10
25
120
5
5
Ciss
pF
Max
Crss
pF
Max
ton
ns
Max
toff
ns
Max
S l
Style
Case 29–04 — TO–226AA (TO–92) — N–Channel
MPF4856
MPF4859
J111
MPF4857
MPF4860
J112
MPF4392
2N5639
MPF4861
MPF4393
2N5640
J113
2N5555
BF246A
BF246B
J110
25
25
30
40
40
50
60
60
60
100
100
100
150
35(1)
50(1)
18
—
—
—
—
—
—
—
1.0
—
—
1.0
—
—
1.0
1.0
—
4.0
4.0
3.0
2.0
2.0
1.0
—
—
0.8
—
—
0.5
—
0.6
0.6
0.5
10
10
10
6.0
6.0
5.0
—
(8.0)(1)
4.0
(12)(1)
(6.0)(1)
3.0
1.0(16)
14
14
4.0
Case 29–04 — TO–226AA (TO–92) — P–Channel
MPF970
MPF971
100
250
1.0
1.0
5.0
1.0
12
7.0
(1) Typical
(16) V
GS(f)
Devices listed in bold, italic are Motorola preferred devices.
Motorola Master Selection Guide
5.1–21
Small Signal Transistors, FETs and Diodes

CASE 29–05
TO–226AE
1–WATT (TO–92)
TMOS FETs
1
2
3
D
CASE 29–04
TO–226AA
(TO–92)
1
2 3
G
S
Table 33. TMOS Switches and Choppers
The following is a listing of small–signal TMOS devices that are intended for switching and chopper applications. These
devices offer low RDS(on) characteristics.
VGS(th)
Volts
RDS(on) @ ID
D i
Device
Ω
Max
A
Min
Max
V(BR)DSS
Volts
Min
Ciss
pF
Max
Crss
pF
Max
ton
ns
Max
toff
ns
Max
S l
Style
15
15
5.0
15
5.0
5.0
—
10
15
15
5.0
15
5.0
5.0
—
10
22
22
22
22
22
22
22
22
30
10
10
10
8.0
8.0
6.0(1)
30
10
10
10
18
23
12(1)
15
20
10
8.0
15
15
20
10
23
15
22
22
30
22
22
22
7
30
22
22
22
30
Case 29–05 — TO–226AE (1–WATT TO–92) — N–Channel
MPF930
MPF960
MPF6659
MPF990
MPF6660
MPF6661
MPF910
VN10LM
1.4
1.7
1.8
2.0
3.0
4.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
1.0
1.0
0.8
1.0
0.8
0.8
0.3
0.8
3.5
3.5
2.0
3.5
2.0
2.0
2.5
2.5
35
60
35
90
60
90
60
60
70(1)
70(1)
30(1)
70(1)
30(1)
30(1)
20(1)
20(1)
4(1)
20(1)
4(1)
4(1)
—
60
—
5.0
2.5
3.0
3.0
2.5
2.0
2.0
2.7
3.0
2.5
2.5
2.0
3.0
60
60
60
60
170
240
200
200
60
60
240
200
100
60
25(1)
60
125
125
72(1)
60(1)
25
5.0
3.0(1)
5.0
20
20
3.0(1)
6.0(1)
50
60
125
60(1)
5.0
5.0
20
6.0(1)
Case 29–04 — TO–226AA (TO–92) — N–Channel
VN0300L
2N7000
BS170
VN0610LL
VN1706L
VN2406L
BSS89
BS107A
2N7008
VN2222LL
VN2410L
BS107
1.2
5.0
5.0
5.0
6.0
6.0
6.0
6.4
7.5
7.5
10
14
1.0
0.5
0.2
0.5
0.5
0.5
0.30
0.25
0.5
0.5
0.5
0.2
0.8
0.8
0.8
0.8
0.8
0.8
1.0
1.0
1.0
0.6
0.8
1.0
(1) Typical
Devices listed in bold, italic are Motorola preferred devices.
Small Signal Transistors, FETs and Diodes
5.1–22
Motorola Master Selection Guide
Surface Mount FETs
CASE 318–08
TO–236AB
SOT–23
3
This section contains the FET plastic packages available for
surface mount applications. Most of these devices are the
most popular metal–can and insertion type parts carried over
to the new surface mount packages.
1
2
6
5
CASE 419–02
SC–70/SOT–323
4
4
1
2
3
CASE 419B–01
SOT–363
1
CASE 318E–04
SOT–223
2
3
Table 34. Surface Mount RF JFETs
The following is a list of surface mount FETs which are intended for VHF/UHF RF amplifier applications.
Pinout: 1–Drain, 2–Source, 3–Gate
NF
D i
Device
M ki
Marking
dB
Typ
Yfs @ VDS
f
MHz
mmhos
Min
mmhos
Max
Volts
V(BR)GSS
S l
Style
450
450
450
100
100
100
10
8.0
10
4.5
3.0
4.0
20
18
18
7.5
6.0
8.0
10
10
10
15
15
15
25
25
25
30
25
25
10
10
10
10
10
10
100
4.5
7.5
15
30
7
Case 318–08 — TO–236AB (SOT–23) — N–Channel
MMBFJ309LT1
MMBFJ310LT1
MMBFU310LT1
MMBF4416LT1
MMBF5484LT1
MMBF5486LT1
6U
6T
M6C
M6A
M6B
6H
1.5
1.5
1.5
2(3)
2.0
2.0
Case 419B–01 — SOT–363— Dual N–Channel
MBF4416DW1T1
M6
2.0
(3) Max
Table 35. Surface Mount General–Purpose JFETs
The following table is a listing of surface mount small–signal general purpose FETs. These devices are intended for
small–signal amplification for DC, audio, and lower RF frequencies. They also have applications as oscillators and
general–purpose, low–voltage switches.
Pinout: 1–Drain, 2–Source, 3–Gate
Yfs @ VDS
D i
Device
M ki
Marking
V(BR)GSS
mmhos
Min
IDSS
mmhos
Max
Volts
mA
Min
mA
Max
S l
Style
5.0
6.0
15
15
1.0
4.0
5.0
16
10
10
1.0
4.0
15
1.0
5.0
10
1.0
5.0
15
1.0
5.0
7
Case 318–08 — TO–236AB (SOT–23) — N–Channel
MMBF5457LT1
MMBF5459LT1
6D
6L
25
25
1.0
2.0
Case 318–08 — TO–236AB (SOT–23) — P–Channel
MMBF5460LT1
M6E
40
Case 419B–01 — SOT–363 — Dual N–Channel
MBF5457DW1T1
6D
25
(3) Max
Devices listed in bold, italic are Motorola preferred devices.
Motorola Master Selection Guide
5.1–23
Small Signal Transistors, FETs and Diodes
Surface Mount FETs (continued)
Table 36. Surface Mount Choppers/Switches JFETs
The following is a listing of small–signal surface mount JFET devices intended for switching and chopper applications.
Pinout: 1–Drain, 2–Source, 3–Gate
D i
Device
M ki
Marking
RDS(on)
Ohms
Max
toff
ns
Max
VGS(off)
IDSS
V(BR)GSS
Volts
Min
Volts
Max
mA
Min
mA
Max
S l
Style
40
30
30
30
30
–4.0
–4.0
–2.0
–2.0
–0.5
–10
–10
–6.0
–5.0
–3.0
50
50
20
25
5.0
—
150
100
75
30
10
10
10
10
10
30
30
3.0
0.8
6.0
2.5
7.0
1.5
60
20
10
10
Case 318–08 — TO–236AB (SOT–23) — N–Channel
MMBF4856LT1
MMBF4391LT1
MMBF4860LT1
MMBF4392LT1
MMBF4393LT1
AAA
6J
6F
6K
6G
25
30
40
60
100
25
20
50
35
50
Case 318–08 — TO–236AB (SOT–23) — P–Channel
MMBFJ175LT1
MMBFJ177LT1
6W
6Y
125
300
—
—
Table 37. TMOS FETs
The following is a listing of small–signal surface mount TMOS FETs which exhibit low RDS(on) characteristics.
Pinout: 1–Gate, 2–Source, 3–Drain
RDS(on) @ ID
D i
Device
M ki
Marking
VGS(th)
Switching Time
VDSS
Volts
Min
Volts
Max
ton ns
toff ns
S l
Style
60
100
50
60
20
20
30
0.8
0.8
0.5
1.0
1.0
1.0
1.0
3.0
2.8
1.5
2.5
2.4
2.4
2.4
10
20
20
20
2.5
2.5
2.5
10
40
20
20
15
16
16
21
21
21
21
21
21
21
50
20
20
20
1.0
1.0
1.0
0.7
2.4
2.0
2.4
1.0
2.5
2.5
2.5
2.5
16
16
16
16
21
21
21
21
mA
VDSS
Volts
Min
Volts
Max
ton ns
toff ns
S l
Style
1000
1000
200
200
60
90
240
200
1.0
0.8
0.8
1.0
3.5
2.0
2.0
3.0
15
5.0
—
15
15
5.0
—
15
3
3
3
3
20
1.0
2.4
2.5
15
8
20
1.0
2.4
2.5
16
8
Ohm
mA
Case 318–08 — TO–236AB (SOT–23) — N–Channel
MMBF170LT1
BSS123LT1
BSS138LT1
2N7002LT1
MMBF0201NLT1
MGSF1N02LT1
MGSF1N03LT1
6Z
SA
J1
702
N1
N2
N3
5.0
6.0
3.5
7.5
1.0
0.085
0.09
200
100
200
500
300
1200
1200
Case 318–08 — TO–236 (SOT–23) — P–Channel
BSS84LT1
MMBF0202PLT1
MGSF1P02LT1
MGSF1P02ELT1
PD
P3
PC
PE
6.0
1.4
0.35
0.16
100
200
1500
1500
Pinout: 1–Gate, 2–Drain, 3–Source, 4–Drain
RDS(on)
D i
Device
M ki
Marking
Ohm
VGS(th)
Switching Time
Case 318E–04— SOT–223 — N–Channel
MMFT960T1
MMFT6661T1
MMFT2406T1
MMFT107T1
FT960
T6661
T2406
FT107
1.7
4.0
10
14
Case 419–02 — SC–70/SOT–323 — N–Channel
MMBF2201NT1
N1
1.0
300
Case 419–02 — SC–70/SOT–323 — P–Channel
MMBF2202PT1
P3
2.2
200
Devices listed in bold, italic are Motorola preferred devices.
Small Signal Transistors, FETs and Diodes
5.1–24
Motorola Master Selection Guide
Tuning and Switching Diodes
CASE 29–04
TO–226AA
(TO–92)
Tuning Diodes —
Abrupt Junction
1
Motorola supplies voltage–variable capacitance diodes serving
the entire range of frequencies from HF through UHF. Used in RF
receivers and transmitters, they have a variety of applications,
including:
• Phase–locked loop tuning systems
• Local oscillator tuning
• Tuned RF preselectors
• RF filters
• RF phase shifters
• RF amplifiers
• Automatic frequency control
• Video filters and delay lines
• Harmonic generators
• FM modulators
Two families of devices are available: Abrupt Junction and Hyper
Abrupt Junction. The Abrupt Junction family includes devices
suitable for virtually all tuned–circuit and narrow–range tuning
applications throughout the spectrum.
1
3
2
STYLE 15
2
23
CASE 51–02
DO–204AA
(DO–7)
1
CASE 182–02
TO–226AC
(TO–92)
1
2
STYLE 1
2
Cathode
1
Anode
STYLE 1
1
2
3
Cathode
3
CASE 318–08
TO–236AB
SOT–23
1
Anode
STYLE 8
1
2
1
3
2
3
1
STYLE 9
2
CASE 463–01
SOT–416/SC–90
Typical Characteristics
Diode Capacitance versus Reverse Voltage
100
1000
50
C T , DIODE CAPACITANCE (pF)
C T , DIODE CAPACITANCE (pF)
70
1N5148,A
30
20
1N5144,A
10
1N5140,A
7
5
TA = 25°C
f = 1 MHz
1N5450A
MV1638
1N5456A
MV1650
100
(See Tables 38 Thru 40)
10
1N5441A
MV1620
3
1
2
0.6 1
2
4 6 10
20 40 60
VR, REVERSE VOLTAGE (VOLTS)
1N5452A
MV1642
0.1
1N5445A
MV1628
1
10
VR, REVERSE VOLTAGE (VOLTS)
100
MV2109
MMBV2109LT1
100
C T , DIODE CAPACITANCE (pF)
C T , DIODE CAPACITANCE (pF)
1000
MV2115
100
10
MV2101
MMBV2101LT1
1
0.1
MV2105
MMBV2105LT1
1
10
VR, REVERSE VOLTAGE (VOLTS)
100
70
40
MV104G
MMBV432LT1
MV104
20
TA = 25°C
f = 1 MHz
EACH DIODE
10
0.3
0.5
(See Tables 41 and 42)
Motorola Master Selection Guide
1
2
3
5
10
VR, REVERSE VOLTAGE (VOLTS)
20
30
(See Table 43)
5.1–25
Small Signal Transistors, FETs and Diodes
Tuning Diodes — Abrupt Junction (continued)
Table 38. General–Purpose Glass Abrupt Tuning Diodes
High Q Capacitance Ratio @ 4.0 Volts/60 Volts
The following is a listing of axial leaded, general–purpose, abrupt tuning diodes. These devices exhibit high Q characteristics.
CT @ VR = 4.0 V, 1.0 MHz
D i (19)
Device
pF
Min
pF
Nominal
pF
Max
V(BR)R
Volts
Cap Ratio
C4/C60
Min
Q
4.0 V, 50 MHz
Min
6.1
9.0
16.2
19.8
24.3
42.3
6.8
10
18
22
27
47
7.5
11
19.8
24.2
29.7
51.7
60
60
60
60
60
60
2.7
2.8
2.8
3.2
3.2
3.2
350
300
250
200
200
200
Case 51–02 — DO–204AA (DO–7)
1N5139
1N5140
1N5143
1N5144
1N5145
1N5148
Table 39. General–Purpose Glass Abrupt Tuning Diodes
High Q Capacitance Ratio @ 2.0 Volts/30 Volts
The following is a listing of axial leaded, general–purpose, abrupt tuning diodes. These devices exhibit very high Q
characteristics.
CT @ VR = 4.0 V, 1.0 MHz
Device
D
i (20)
pF
Min
pF
Nominal
pF
Max
VR(BR)R
Volts
Cap Ratio
C2/C30
Min
Q
4.0 V, 50 MHz
Min
6.1
10.8
16.2
19.8
24.3
29.7
35.1
42.3
50.4
73.8
90
6.8
12
18
22
27
33
39
47
56
82
100
7.5
13.2
19.8
24.2
29.7
36.3
42.9
51.7
61.6
90.2
110
30
30
30
30
30
30
30
30
30
30
30
2.5
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.7
2.7
450
400
350
350
350
350
300
250
200
175
175
Case 51–02 — DO–204AA (DO–7)
1N5441A
1N5444A
1N5446A
1N5448A
1N5449A
1N5450A
1N5451A
1N5452A
1N5453A
1N5455A
1N5456A
(19)Suffix A = 10.0%
(20)Suffix B = 5.0%
Small Signal Transistors, FETs and Diodes
5.1–26
Motorola Master Selection Guide
Tuning Diodes — Abrupt Junction (continued)
Table 40. General–Purpose Glass Abrupt Tuning Diodes
Capacitance Ratio @ 2.0 Volts/20 Volts
The following is a listing of axial leaded, general–purpose, abrupt tuning diodes. These devices exhibit high Q characteristics.
CT @ VR = 4.0 V, 1.0 MHz
D i
Device
pF
Min
pF
Nominal
pF
Max
V(BR)R
Volts
Cap Ratio
C2/C20
Min
Q
4.0 V, 50 MHz
Typ
6.1
9.0
10.8
13.5
16.2
19.8
24.3
29.7
35.1
42.3
50.4
73.8
90
6.8
10
12
15
18
22
27
33
39
47
56
82
100
7.5
11
13.2
16.5
19.8
24.2
29.7
36.3
42.9
51.7
61.6
90.2
110
20
20
20
20
20
20
20
20
20
20
20
20
20
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
300
300
300
250
250
250
200
200
200
200
150
150
150
Case 51–02 — DO–204AA (DO–7)
MV1620
MV1624
MV1626
MV1628
MV1630
MV1634
MV1636
MV1638
MV1640
MV1642
MV1644
MV1648
MV1650
Table 41. General–Purpose Plastic Abrupt Tuning Diodes
Capacitance Ratio @ 2.0 Volts/30 Volts
The following is a listing of plastic package, general–purpose, abrupt tuning diodes. These devices exhibit high Q
characteristics.
CT @ VR = 4.0 V, 1.0 MHz
D i
Device
pF
Min
pF
Nominal
pF
Max
VR(BR)R
Volts
Cap Ratio
C4/C30
Min
Q
4.0 V, 50 MHz
Typ
6.8
10
12
15
22
27
33
47
68
82
100
7.5
11
13.2
16.5
24.2
29.7
36.3
51.7
74.8
90.2
110
30
30
30
30
30
30
30
30
30
30
30
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.6
400
350
350
350
300
250
200
150
150
100
100
Case 182–02 — TO–226AC (TO–92) — 2–Lead
MV2101
MV2103
MV2104
MV2105
MV2107
MV2108
MV2109
MV2111
MV2113
MV2114
MV2115
6.1
9.0
10.8
13.5
19.8
24.3
29.7
42.3
61.2
73.8
90
Devices listed in bold, italic are Motorola preferred devices.
Motorola Master Selection Guide
5.1–27
Small Signal Transistors, FETs and Diodes
Tuning Diodes — Abrupt Junction (continued)
Table 42. Surface Mount Abrupt Tuning Diodes
Capacitance Ratio @ 2.0 Volts/30 Volts
The following is a listing of surface mount abrupt junction tuning diodes intended for general–purpose variable capacitance
circuit applications.
CT @ VR = 4.0 V, 1.0 MHz
Device
D i
pF
pF
pF
Min
Nominal
Max
VR(BR)R
Volts
6.1
9.0
10.8
13.5
19.8
24.3
29.7
6.8
10
12
15
22
27
33
7.5
11
13.2
16.5
24.2
29.7
36.3
30
30
30
30
30
30
30
Q
Cap Ratio
C2/C30
4.0 V, 50 MHz
Min
Typ
2.5
2.5
2.5
2.5
2.5
2.5
2.5
400
350
350
350
300
250
200
Case 318–08 — DO–236AB (SOT–23)
MMBV2101LT1
MMBV2103LT1
MMBV2104LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
Table 43. Abrupt Tuning Diodes for FM Radio — Dual
The following is a listing of abrupt tuning diodes that are available as dual units in a single package.
CT @ VR(22)
D i
Device
pF
Min
pF
Max
42
Volts
Cap Ratio
C3/C30
Min
Q
3.0 V, 50 MHz
Min
V(BR)R
Volts
D i
Device
Marking
S l
Style
3.0
2.5
100
32
—
15
2.0
1.5(21)
100
14
M4B
9
Case 29–04 — TO–226AA (TO–92)
MV104
37
Case 318–08 — TO–236AB (SOT–23)
MMBV432LT1
43
48.1
(21)C2/C8
(22)Each Diode
Devices listed in bold, italic are Motorola preferred devices.
Small Signal Transistors, FETs and Diodes
5.1–28
Motorola Master Selection Guide
Tuning Diodes —
Hyper–Abrupt Junction
2
The Hyper–Abrupt family exhibits higher capacitance, and a
much larger capacitance ratio. It is particularly well suited for
wider–range applications such as AM/FM radio and TV tuning.
CASE 51–02
DO–204AA
(DO–7)
1
Cathode
CASE 182–02
TO–226AC
(TO–92)
2
Anode
CASE 318–08
TO–236AB
SOT–23
3
Cathode
2
Anode
STYLE 1
1
1
1
Cathode
STYLE 1
2
3
1
1
Anode
STYLE 8
2
4
CASE 318E–04
SOT–223
1
2
1
2, 4
3
STYLE 2
Typical Characteristics
Diode Capacitance versus Reverse Voltage
40
36
16
14
C T , CAPACITANCE (pF)
C T , DIODE CAPACITANCE (pF)
20
18
MMBV105GLT1
12
10
8
TA = 25°C
f = 1 MHz
6
4
2
0
32
28
MMBV109LT1
MV209
24
20
16
12
8
4
0.3
0.5
1
2
3
5
10
20
0
30
1
3
10
30
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
Figure 2. Diode Capacitance
Motorola Master Selection Guide
5.1–29
100
Small Signal Transistors, FETs and Diodes
Tuning Diodes — Hyper–Abrupt Junction (continued)
10
9
C T , DIODE CAPACITANCE (pF)
C T , DIODE CAPACITANCE (pF)
40
32
MMBV409LT1
MV409
24
16
8
0
1
3
10
20
VR, REVERSE VOLTAGE (VOLTS)
8
7
6
MMBV809LT1
5
4
3
2
1
0
0.5 1
2
Figure 3. Diode Capacitance
Figure 4. Diode Capacitance
50
36
32
28
C T , DIODE CAPACITANCE (pF)
C T , DIODE CAPACITANCE (pF)
40
MMBV3102LT1
24
20
16
12
TA = 25°C
f = 1 MHz
8
4
0
0.3
0.5
1
2
3
5
10
20
40
f = 1 MHz
20
10
0
30
MMBV609LT1
30
1
2
7
10
20
Figure 5. Diode Capacitance
Figure 6. Diode Capacitance
Each Die
500
C T , CAPACITANCE (pF)
500
100
50
4
30
40
MVAM109/MV7005T1
1000
C T , CAPACITANCE (pF)
5
VR, REVERSE VOLTAGE (VOLTS)
MVAM108
1
3
VR, REVERSE VOLTAGE (VOLTS)
1000
10
3 4 5
8 10
15
VR, REVERSE VOLTAGE (VOLTS)
100
50
10
8
1
3
5
7
9
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance versus Reverse Voltage
Figure 8. Capacitance versus Reverse Voltage
Small Signal Transistors, FETs and Diodes
5.1–30
Motorola Master Selection Guide
Tuning Diodes — Hyper–Abrupt Junction (continued)
MVAM115
MVAM125
500
500
C T , CAPACITANCE (pF)
1000
C T , CAPACITANCE (pF)
1000
100
50
10
2
6
10
14
VR, REVERSE VOLTAGE (VOLTS)
100
50
10
18
Figure 9. Capacitance versus Reverse Voltage
2
6
10
14
18
22
VR, REVERSE VOLTAGE (VOLTS)
26
Figure 10. Capacitance versus Reverse Voltage
C T , DIODE CAPACITANCE (pF)
500
TA = 25°C
f = 1 MHz
300
200
100
MV1405
50
30
20
MV1403
10
MV1404
1
MV7404T1
3
4
2
5
6
7
8
9
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Diode Capacitance versus Reverse Voltage
Table 44. Hyper–Abrupt Tuning Diodes for Telecommunications — Single
The following is a listing of hyper–abrupt tuning diodes intended for high frequency, FM radio, and TV tuner applications.
CT @ VR (f = 1.0 MHz)
D i
Device
pF
Min
pF
Max
Cap Ratio @ VR
Q
50 MHz
Max
V(BR)R
Volts
Device
D
i
Marking
Case
C
Style
CV
Curve
Fig
Volts
Min
Max
Volts
3.0 V
Min
3.0
3.0
5.0
1.5
6.5
2.0
3/25
3/8
200
200
—
—
30
20
—
—
1
1
2
3
25
3.0
3.0
2.0
3.0
4.0
5.0
1.5
1.8
4.5
6.5
6.5
1.9
2.6
—
3/25
3/25
3/8
2/8
3/25
200
200
200
300
200
—
—
—
—
—
30
30
20
20
30
M4E
M4A
X5
5K
M4C
8
8
8
8
8
1
2
3
4
5
3.0
5.0
6.5
3/25
200
—
30
M4A
8
—
Case 182–02 — TO–226AC (TO–92)
MV209
MV409
26
26
32
32
Case 318–08 — TO–236AB (SOT–23)
MMBV105GLT1
MMBV109LT1
MMBV409LT1
MMBV809LT1
MMBV3102LT1
1.5
26
26
4.5
20
2.8
32
32
6.1
25
Case 419–02 — SC–70/SOT–323
MBV109T1
26
32
Devices listed in bold, italic are Motorola preferred devices.
Motorola Master Selection Guide
5.1–31
Small Signal Transistors, FETs and Diodes
Tuning Diodes — Hyper–Abrupt Junction (continued)
Table 45. Hyper–Abrupt Tuning Diodes for Communications — Dual
CT @ VR (f = 1.0 MHz)
D i
Device
pF
Min
pF
Max
Cap Ratio @ VR
Q
Volts
Min
Max
Volts
3.0 V
Min
3.0
1.8
2.4
3/8
250
50 MHz
Max
V(BR)R
Volts
Device
D
i
Marking
Case
C
Style
CV
Curve
Fig
—
20
5L
9
6
Case 318–08 — TO–236AB (SOT–23)
MMBV609LT1
26
32
Table 46. Hyper–Abrupt Tuning Diodes for Low Frequency Applications — Single
The following is a listing of AM, hyper–abrupt tuning diodes that have a large capacity range and are designed for low
frequency circuit applications.
CT @ 1.0 MHz
D i
Device
pF
Min
Cap Ratio @ VR
pF
Max
Volts
Min
560
520
560
560
1.0
1.0
1.0
1.0
15
12
15
15
Volts
V(BR)R
Volts
S l
Style
CV
Curve
Figure
1.0/8.0
1.0/9.0
1.0/15
1.0/25
12
15
18
28
1
1
1
1
7
8
9
10
Case 182–02— TO–226AC (TO–92)
MVAM108
MVAM109
MVAM115
MVAM125
440
400
440
440
Table 47. Hyper–Abrupt High Capacitance Voltage Variable Diode — Surface Mount
The following are high capacitance voltage variable diodes intended for low frequency applications and circuits requiring
large tuning capacitance.
CT @ f = 1.0 MHz
D i
Device
V(BR)R
Volts
IR
nA
Min
pF
Max
pF
Cap Ratio
C
R i
Min
Q
Min
S l
Style
CV
Curve
Figure
400
96
520
144
12(26)
10(27)
150(28)
200(29)
2
2
8
11
Case 318E–04— SOT–223
Pinout: 1–Anode, 2, 4–Cathode, 3–NC
MV7005T1
MV7404T1
15
12
100
100
Table 48. Hyper–Abrupt High Capacitance Tuning Diodes — Axial Lead Glass Package
CT @ VR
D i
Device
pF
Min
pF
Max
144
210
300
Volts
Cap Ratio
C2/C10
Min
Q
2.0 V, 1.0 MHz
Min
V(BR)R
Volts
Style
CV
Curve
Figure
2.0
2.0
2.0
10
10
10
200
200
200
12
12
12
1
1
1
11
11
11
Case 51–02 — DO–204AA (DO–7)
MV1404
MV1403
MV1405
96
140
200
(26) V = 1.0 V/V = 9.0 V
R
R
(27) V = 2.0 V/V = 10 V
R
R
(28) V = 1.0 V, f = 1.0 MHz
R
(29) V = 2.0 V, f = 1.0 MHz
R
Devices listed in bold, italic are Motorola preferred devices.
Small Signal Transistors, FETs and Diodes
5.1–32
Motorola Master Selection Guide
Schottky Diodes
CASE 182–02
TO–226AC
(TO–92)
Schottky diodes are ideal for VHF and UHF mixer and detector
applications as well as many higher frequency applications.
They provide stable electrical characteristics by eliminating
the point–contact diode presently used in many applications.
1
CASE 425–04
SOD–123
STYLE 1
STYLE 1
2
2
Cathode
1
Cathode
1
Anode
6
CASE 419–02
SC–70/SOT–323
1
1
3
2
Single
3
1
2
Anode
5
4
CASE 419B–01,
STYLE 6
SOT–363
3
CASE 318–08
TO–236AB
SOT–23
2
STYLE 8
STYLE 9
1
STYLE 11
3 1
21
2
Single
Series
3
Common Cathode
3
STYLE 12
STYLE 19
Cathode
1
Anode
3
2
1
Series
3
2
Cathode
Typical Characteristics
Capacitance versus Reverse Voltage
2.8
TA = 25°C
MBD101
MMBD101LT1
MMBD352LT1*
MMBD353LT1*
MMBD354LT1*
0.9
TA = 25°C
2.4
C T , CAPACITANCE (pF)
C T , CAPACITANCE (pF)
1
0.8
0.7
2
MBD301,
MMBD301LT1
1.6
1.2
0.8
0.4
0.6
MBD701, MMBD701LT1
0
0
1
2
VR, REVERSE VOLTAGE (VOLTS)
3
4
0
* EACH DIODE
5
10
15
20
25
30
35
40
45
50
VR, REVERSE VOLTAGE (VOLTS)
(See Table 49)
Devices listed in bold, italic are Motorola preferred devices.
Motorola Master Selection Guide
5.1–33
Small Signal Transistors, FETs and Diodes
Schottky Diodes (continued)
Table 49. Schottky Diodes
The following is a listing of Schottky diodes that exhibit low forward voltage drop for improved circuit efficiency.
CT @ VR
pF
Max
VF @ 10 mA
Volts
Max
IR @ VR
nA
Max
Minority
Lifetime
pS (TYP)
Device
Marking
S l
Style
1.0 @ 20 V
1.5 @ 15 V
1.0 @ 0 V
1.0
0.6
0.6
200 @ 35 V
200 @ 25 V
250 @ 3.0 V
15
15
—
—
—
—
1
1
1
70
30
7.0
7.0
7.0
7.0
7.0
30
1.0 @ 20 V
1.5 @ 15 V
1.0 @ 0 V
1.0 @ 0 V
1.0 @ 0 V
1.0 @ 0 V
1.0 @ 0 V
1.5 @ 1.5 V
1.0
0.6
0.6
0.6
0.6
0.6
0.6
0.6
200 @ 35 V
200 @ 25 V
250 @ 3.0 V
250 @ 3.0 V
250 @ 3.0 V
250 @ 3.0 V
250 @ 3.0 V
200 @ 25 V
15
15
15
15
15
15
15
15
5H
4T
4M
M5G
M4F
M6H
MJ1
5N
8
8
8
11
19
9
12
11
70
30
4
1.0 @ 20 V
1.5 @ 15 V
1.0 @ 0 V
1.2
0.6
0.6
0.2 @ 35 V
0.2 @ 25 V
0.25 @ 3 V
15
15
15
5H
4T
4M
1
1
1
1.5 @ 15 V
1.0 @ 20 V
0.6
1.0
0.2 @ 25 V
0.2 @ 35 V
—
—
4T
5H
2
2
V(BR)R
Volts
D i
Device
Case 182–02 — TO–226AC (TO–92)
MBD701
MBD301
MBD101
70
30
7.0
Case 318–08 — TO–236AB (SOT–23)
MMBD701LT1
MMBD301LT1
MMBD101LT1
MMBD352LT1 (23)
MMBD353LT1 (23)
MMBD354LT1 (23)
MMBD355LT1 (23)
MMBD452LT1 (23)
Case 425–04 — (SOD–123)
MMSD701T1
MMSD301T1
MMSD101T1
Case 419–02 — (SC–70/SOT–323)
MMBD330T1
MMBD770T1
30
70
(23) Dual Diodes
Case 419B–01 — SOT–363 – Duals
V(BR)R
D i
Device
IR
VF
M ki
Marking
Min
Volts
@ IBR
(µA)
Max
(µA)
@ VR
Volts
Min
Volts
Max
Volts
@ IF
(mA)
CT(30)
Max
(pF)
trr
Max
(ns)
Case
C
Style
M4
T4
H5
7
30
70
10
10
10
200
200
200
25
25
25
—
—
—
0.6
0.4
0.5
1.0
1.0
1.0
1.0
1.5
1.0
—
—
—
6
6
6
MBD110DWT1
MBD330DWT1
MBD770DWT1
(30) V = 0 V, f = 1.0 MHz
R
Devices listed in bold, italic are Motorola preferred devices.
Small Signal Transistors, FETs and Diodes
5.1–34
Motorola Master Selection Guide
Switching
Diodes
Small–signal switching diodes are intended for low current
switching and steering applications. Hot–Carrier, PIN and
general–purpose diodes allow a wide selection for specific
application requirements.
1
CASE 29–04
TO–226AA
(TO–92)
2
CASE 182–02
TO–226AC
(TO–92)
1
2
3
STYLE 3
1
2
STYLE 1
3
Typical Characteristics
1
10
C T , DIODE CAPACITANCE (pF)
2
Cathode
STYLE 4
Capacitance versus Reverse Voltage
1
Anode
2
TA = 25°C
f = 1 MHz
3
2
3
MPN3404
CASE 318–08
TO–236AB
SOT–23
1
2
1
0.5
0.3
0.2
MMBV3401LT1
20 V MAX VR
STYLE 8
MPN3700
MMBV3700LT1
1
STYLE 12
3
1
2
SINGLE
0
0
12
18
24
30
36
42
48
3
COMMON ANODE
54
VR, REVERSE VOLTAGE (VOLTS)
(See Table 50)
STYLE 9
STYLE 18
1
2
2
STYLE 1
SINGLE
1
Cathode
2
Anode
3
COMMON CATHODE
CASE 425–04
SOD–123
STYLE 11
STYLE 19
1
ANODE
3
3
1
3
2
CATHODE
3
1
2
3
SERIES
3
SERIES
2
3
CASE 463–01
SOT–416/SC–90
CASE 318D–04
SC–59
1
2
1
CATHODE
STYLE 4
1
2
ANODE
STYLE 5
STYLE 2
2
1
CASE 419–02
SC–70/SOT–323
3
2
2
3
SINGLE
STYLE 5
1
2
1
2
STYLE 4
STYLE 5
1
3
STYLE 3
1
SINGLE
STYLE 4
SINGLE
3
STYLE 2
2
2
3
COMMON CATHODE
Motorola Master Selection Guide
1
3
COMMON CATHODE
2
3
COMMON ANODE
3
COMMON ANODE
5.1–35
Small Signal Transistors, FETs and Diodes
Switching Diodes (continued)
Table 50. PIN Switching Diodes
The following PIN diodes are designed for VHF band switching and general–purpose low current switching applications.
CT @ VR @ 1.0 MHz
V(BR)R
Volts
Min
D i
Device
Series
Resistance
Ohm
Max
D i
Device
Marking
S l
Style
pF
Max
Volts
IR @ VR
µA
Max
1.0
2.0
20
15
0.1 @ 150
0.1 @ 25 V
1.0 @ 10 mA
0.85 @ 10 mA
—
—
1
1
1.0
1.0
20
20
0.1 @ 150
0.1 @ 25 V
1.0 @ 10 mA
0.7 @ 10 mA
4R
4D
8
8
Case 182–02 — TO–226AC (TO–92)
MPN3700
MPN3404
200
20
Case 318–08 — TO–236AB (SOT–23)
MMBV3700LT1
MMBV3401LT1
200
35
Table 51. General–Purpose Signal and Switching Diodes — Single
The following is a listing of small–signal switching diodes in surface mount packages. These diodes are intended for low
current switching and signal steering applications.
V(BR)R
D i
Device
M ki
Marking
Min
Volts
@ IBR
(µA)
IR
VF
CT(30)
trr
Max
(µA)
@ VR
Volts
Min
Volts
Max
Volts
@ IF
(mA)
Max
(pF)
Max
(ns)
Case
Style
Case 318–08 — TO–236AB (SOT–23)
BAS21LT1
MMBD914LT1
BAS16LT1
MMBD6050LT1
BAL99LT1
JS
5D
A6
5A
JF
250
100
75
70
70
100
100
100
100
100
0.1
5.0
1.0
0.1
2.5
200
75
75
50
70
—
—
—
0.85
—
1.0
1.0
1.0
1.1
1.0
100
10
50
100
50
5.0
4.0
2.0
2.5
1.5
50
4.0
6.0
4.0
6.0
8
8
8
8
18
40
40
100
100
0.1
0.1
35
35
—
—
1.2
1.2
100
100
2.0
2.0
3.0
3.0
4
2
75
40
80
100
1.0
100
100
100
0.02
0.1
0.1
5.0
20
35
75
75
—
—
—
—
1.25
1.2
1.2
1.0
150
100
100
10
2.0
2.0
2.0
4.0
6.0
3.0
3.0
4.0
2
2
2
2
100
100
—
100
100
—
5.0
5.0
0.5
75
75
80
—
—
—
1.0
1.0
1.2
10
10
100
4.0
4.0
2.0
4.0
4.0
4.0
1
1
1
Case 318D–04 — SC–59
M1MA151AT1
M1MA151KT1
MA
MH
Case 419–02 — SC–70/SOT–323
BAS16WT1
M1MA141KT1
M1MA142KT1
M1MA174T1
A6
MH
MI
J6
Case 425–04— SOD–123
MMSD914T1
MMSD4148T1
MMSD71RKT1
5D
5I
6S
(30) V = 0 V, f = 1.0 MHz
R
Devices listed in bold, italic are Motorola preferred devices.
Small Signal Transistors, FETs and Diodes
5.1–36
Motorola Master Selection Guide
Switching Diodes (continued)
Table 52. General–Purpose Signal and Switching Diodes — Dual
The following is a listing of small–signal switching diodes in surface mount packages. These diodes are intended for low
current switching and signal steering applications.
V(BR)R
D i
Device
M ki
Marking
Min
Volts
@ IBR
(µA)
IR
VF
CT(30)
trr
Max
(µA)
@ VR
Volts
Min
Volts
Max
Volts
@ IF
(mA)
Max
(pF)
Max
(ns)
Case
Style
Case 318–08 — TO–236AB (SOT–23)
MMBD7000LT1
MMBD2836LT1
MMBD2838LT1
BAV70LT1
BAV99LT1
BAW56LT1
MMBD6100LT1
BAV74LT1
MMBD2835LT1
MMBD2837LT1
M5C
A2
A6
A4
A7
A1
5BM
JA
A3
A5
100
75
75
70
70
70
70
50
35
35
100
100
100
100
100
100
100
5.0
100
100
1.0
0.1
0.1
5.0
2.5
2.5
0.1
0.1
0.1
0.1
50
50
50
70
70
70
50
50
30
30
0.75
—
—
—
—
—
0.85
—
—
—
1.1
1.0
1.0
1.0
1.0
1.0
1.1
1.0
1.0
1.0
100
10
10
50
50
50
100
100
10
10
1.5
4.0
4.0
1.5
1.5
2.0
2.5
2.0
4.0
4.0
4.0
4.0
4.0
6.0
4.0
6.0
4.0
4.0
4.0
4.0
11
12
9
9
11
12
9
9
12
9
40
40
100
100
0.1
0.1
35
35
—
—
1.2
1.2
100
100
15
2.0
10
3.0
5
3
100
100
100
100
100
100
100
100
0.1
0.1
2.5
5.0
2.5
2.5
0.1
0.1
75
75
70
70
70
70
35
35
—
—
—
—
—
—
—
—
1.2
1.2
1.0
1.0
1.0
1.0
1.2
1.2
100
100
50
50
50
50
100
100
2.0
15
2.0
1.5
1.5
1.5
2.0
15
3.0
10
6.0
6.0
6.0
6.0
3.0
10
5
4
4
5
9
10
5
4
70
—
1.2
100
3.5
4.0
4
70
—
1.2
100
3.5
4.0
5
CT(30)
trr
Case 318D–04 — SC–59
M1MA151WAT1
M1MA151WKT1
MN
MT
Case 419–02 — SC–70/SOT–323
M1MA142WKT1
M1MA142WAT1
BAW56WT1
BAV70WT1
BAV99WT1
BAV99RWT1
M1MA141WKT1
M1MA141WAT1
MU
MO
A1
A4
A7
F7
MT
MN
80
80
70
70
70
70
40
40
Case 463–01 — SOT–416/SC–90 (Common Anode)
DAP222
P9
80
100
100
Case 463–01 — SOT–416/SC–90 (Common Cathode)
DAN222
N9
80
100
100
Table 53. Low–Leakage Medium Speed Switching Diodes — Single
V(BR)R
D i
Device
M ki
Marking
Min
Volts
@ IBR
(µA)
IR
VF
Max
(nA)
@ VR
Volts
Min
Volts
Max
Volts
@ IF
(mA)
Max
(pF)
Max
(ns)
Case
Style
100
100
5.0
0.5
75
30
—
—
1.0
0.95
10
10
2.0
2.0
3000
3000
8
6
30
100
0.5
30
—
0.95
10
2.0
3000
2
30
100
0.5
30
—
0.95
10
2.0
3000
2
30
100
0.5
30
—
0.95
10
2.0
3000
1
Case 318–08 — TO–236AB (SOT–23)
BAS116LT1
MMBD1000LT1
JV
AY
75
30
Case 419–02 — (SOT–323)/(SC–70)
MMBD2000T1
DH
Case 318D–04 — (SC–59)
MMBD3000T1
XP
Case 425–04 — (SOD–123)
MMSD1000T1
4K
Devices listed in bold, italic are Motorola preferred devices.
Motorola Master Selection Guide
5.1–37
Small Signal Transistors, FETs and Diodes
Switching Diodes (continued)
Table 54. Low–Leakage Medium Speed Switching Diodes — Dual
V(BR)R
D i
Device
M ki
Marking
Min
Volts
@ IBR
(µA)
IR
VF
CT(30)
trr
Max
(nA)
@ VR
Volts
Min
Volts
Max
Volts
@ IF
(mA)
Max
(pF)
Max
(ns)
Case
Style
5.0
5.0
5.0
0.5
0.5
70
70
70
30
30
—
—
—
—
—
1.0
1.0
1.0
0.95
0.95
10
10
10
10
10
2.0
2.0
2.0
2.0
2.0
3000
3000
3000
3000
3000
9
11
12
12
9
100
100
0.5
0.5
30
30
—
—
0.95
0.95
10
10
2.0
2.0
3000
3000
4
5
100
100
0.5
0.5
30
30
—
—
0.95
0.95
10
10
2.0
2.0
3000
3000
5
3
Case 318–08 — TO–236AB (SOT–23)
BAV170LT1
BAV199LT1
BAW156LT1
MMBD1005LT1
MMBD1010LT1
JX
JY
JZ
A3
A5
70
70
70
30
30
100
100
100
100
100
Case 419–02 — (SOT–323)/(SC–70) — DUAL
MMBD2005T1
MMBD2010T1
DI
DP
30
30
Case 318D–04 — (SC–59) — DUAL
MMBD3005T1
MMBD3010T1
XQ
XS
30
30
(30) V = 0 V, f = 1.0 MHz
R
Devices listed in bold, italic are Motorola preferred devices.
Small Signal Transistors, FETs and Diodes
5.1–38
Motorola Master Selection Guide
Multiple
Switching Diodes
Multiple diode configurations utilize monolithic structures fabricated by the planar process. They are designed to satisfy fast
switching requirements as in core driver and encoding/decoding applications where their monolithic configurations offer lower cost,
higher reliability and space savings.
14
14
16
16
1
1
1
1
CASE 646–06
PIN DIP
PLASTIC
CASE 648–08
PIN DIP
PLASTIC
CASE 751A–03
SO–14
PLASTIC
CASE 751B–05
SO–16
PLASTIC
Diode Array Diagrams
Dual 10
Diode
Array
7
1
3
4
12 13 14
5
8
9
10 11
2
6
8 Diode
Array
(Common
Cathode)
14
8 Diode
Array
(Common
Anode)
14
1
2
3
5
9
10 13 14
1
4
5
6
12
7
2
2
9
11 12
3
5
7
8
9
11 12
3
5
7
4
5
6
7
8
16 15 14 13 12 11 12
9
Isolated
7 Diode
Array
7
6
5
4
3
2
1
8
9
10 11 12 13 14
6
1
2
3
8
NC Pin 1, 4, 6, 10, 13
3
1
16
Diode
Array
8
2
5
3
8
7
Isolated
8 Diode
Array
NC Pin 1, 4, 6, 10, 13
2
11
Dual 10
Diode
Array
7
4
1
1
8
9
14
11 12
Dual 8
Diode
Array
8
2
3
4
5
14
9
10
7
NC Pin 6, 13
NC Pin 4,6,10,13
Motorola Master Selection Guide
11 12
5.1–39
Small Signal Transistors, FETs and Diodes
Multiple Switching Diodes (continued)
Table 55. Diode Arrays
Case 646 — TO–116
D i
Device
MAD130P
MAD1103P
MAD1107P
MAD1109P
F
Function
i
Pin Connections
Diagram Number
Dual 10 Diode Array
16 Diode Array
Dual 8 Diode Array
7 Isolated Diode Array
1
3
6
8
8 Isolated Diode Array
7
Dual 10 Diode Array
16 Diode Array
8 Diode Common Cathode Array
8 Diode Common Anode Array
Dual 8 Diode Array
7 Isolated Diode Array
2
3
4
5
6
8
8 Isolated Diode Array
7
Case 648–08
MAD1108P
Case 751A–03— SO–14
MMAD130
MMAD1103
MMAD1105
MMAD1106
MMAD1107
MMAD1109
Case 751B–05 — SO–16
MMAD1108
Devices listed in bold, italic are Motorola preferred devices.
Small Signal Transistors, FETs and Diodes
5.1–40
Motorola Master Selection Guide
3
3

1
1
2
2
CASE 318–08
TO–236AB
SOT–23
CASE 318D–04
SC–59
3
Plastic–Encapsulated
Surface Mount Devices
1
2
CASE 425–04
SOD–123
Energy. It’s something Motorola is putting a lot of energy into
helping save. That’s why we’re introducing our GreenLine
portfolio of devices, featuring energy–conserving traits
superior to those of our existing line of standard parts for the
same usage. GreenLine devices can actually help reduce the
power demands of your products.
CASE 419–02
SC–70/SOT–323
• Low–Leakage Switching Diodes: With reverse leakage
specifications guaranteed to 500 pA, they help extend battery
life, making them ideal for small battery–operated systems in
which standby power is essential. Applications include ESD
protection, reverse voltage protection, and steering logic.
• Small Signal HDTMOS: These devices provide our
lowest ever drain–source resistance versus package size.
Lower rDS(on) means less wasted energy through dissipation
loss, making them especially effective for low–current
applications where energy conservation is crucial, such as low
current switchmode power supplies, uninterruptable power
supplies (UPS), power management systems, and bias
switching. This makes them ideal for portable computer–type
products or any system where the combination of power
management and energy conservation is key.
• Bipolar Output Driver Transistors: Offering ultra–low
collector saturation voltage, they deliver more energy to the
intended load with less power wasted through dissipation loss.
They are especially effective in today’s lower voltage
battery–powered applications, and prolong battery life in
portable and hand–held communications and personal digital
equipment.
Save Energy — Save Money
In an increasingly power–hungry world, Motorola’s
GreenLine portfolio makes powerful sense. So much sense
that we plan to continue adding devices to the portfolio.
Chances are, there are Motorola GreenLine devices
applicable to one or more of your products — ones that can
help save energy, dollars — and the environment.
Wide Range of Applications
Currently, our portfolio consists of three families.
Table 56. Bipolar Driver Transistor — PNP
These offer ultra–low collector saturation voltage.
Pinout: 1–Base, 2–Emitter, 3–Collector
hFE@ IC
D i T
Device
Type
MMBT1010LT1
MSD1010T1
M ki
Marking
C
Case
V(BR)CEO
VCE(sat)
VBE(sat)
Min
Max
mA
GLP
GLP
SOT–23
SC–59
15
15
0.1
0.1
1.1
1.1
300
300
600
600
100
100
Devices listed in bold, italic are Motorola preferred devices.
Motorola Master Selection Guide
5.1–41
Small Signal Transistors, FETs and Diodes
GreenLine (continued)
Table 57. Low Leakage Switching Diodes
These offer reverse leakage specifications guaranteed to 500 pA. Versions available in single and dual.
IR
V(BR)R
M ki
Marking
C
Case
Style
Min
Volts
@ IBR
(µA)
Max
(nA)
@ VR
Volts
MMBD1000LT1
MMBD1005LT1
MMBD1010LT1
AY
A3
A5
SOT–23
SOT–23
SOT–23
Single
Dual Anode
Dual Cathode
30
30
30
100
100
100
0.5
0.5
0.5
30
30
30
MMBD2000T1
MMBD2005T1
MMBD2010T1
DH
DI
DP
SC–70
SC–70
SC–70
Single
Dual Anode
Dual Cathode
30
30
30
100
100
100
0.5
0.5
0.5
30
30
30
MMBD3000T1
MMBD3005T1
MMBD3010T1
XP
XQ
XS
SC–59
SC–59
SC–59
Single
Dual Anode
Dual Cathode
30
30
30
100
100
100
0.5
0.5
0.5
30
30
30
MMSD1000T1
4K
SOD–123
Single
30
100
0.5
30
D i T
Device
Type
Table 58. Small Signal HDTMOS
These provide the lowest drain–source resistance versus package size.
VGS(th)
RDS(on)
D i T
Device
Type
M ki
Marking
Ch
Channel
l
Ohm
mA
VDSS
Switching Time
Volts
Min
Volts
Max
t(on)
ns
t(off)
ns
S l
Style
Case 318–08 — TO–236AB (SOT–23) — P–Channel and N–Channel
MMBF0201NLT1
MMBF0202PLT1
MGSF1N02LT1
MGSF1N03LT1
MGSF1P02LT1
MGSF1P02ELT1
N1
P3
—
—
—
—
N
P
N
N
P
P
1.0
1.4
0.08
0.09
0.20
0.16
300
200
2000
2000
1500
1500
20
20
20
30
20
20
1.0
1.0
1.0
1.0
1.0
0.7
2.4
2.4
2.4
2.4
2.4
1.0
2.5
2.5
2.5
2.5
2.5
2.5
15
16
16
16
16
16
21
21
21
21
21
21
P
N
1.5
0.7
200
300
20
20
1.0
1.0
2.4
2.4
2.5
2.5
16
15
7
7
Case 419–02 — SC–70/SOT–323
MMBF2202PT1
MMBF2201NT1
P3
N1
Devices listed in bold, italic are Motorola preferred devices.
Small Signal Transistors, FETs and Diodes
5.1–42
Motorola Master Selection Guide
Small Signal
Multi–integrated Devices
CASE 318–08
SOT–23
CASE 318A–05
SOT–143
VCC (3)
Vout
R1
(3)
Vin 1.0 k
Q1
6.8 V
(1)
R2
33 k
GND
6
Vref (4)
R3
Q2
Iout (2)
1
R4
(2)
5
4
2
3
CASE 419B–01
SOT–363
GND (1)
INTERNAL CIRCUIT DIAGRAMS
Table 59. Low Voltage Bias Stabilizer
A silicon SMALLBLOCK integrated circuit which maintains stable bias current in various discrete bipolar junction and field
effect transistors.
VCC (Volts)
D i Type
Device
T
M ki
Marking
Min
Max
ICC
µA
Vref
Volts
∆Vref
Volts
Case 318A–05 — SOT–143
MDC5000T1
E5
1.8
10
200
2.1
± 50
E6
1.8
10
200
2.1
± 50
Case 419B–01 — SOT–363
MDC5001T1
Table 60. Integrated Relay/Solenoid Driver
Monolithic circuit block to switch 3.0 V to 5.0 V relays. It is intended to replace an array of three to six discrete components.
VCC (Volts)
D i Type
Device
T
Vin (Volts)
Min
Max
Min
Max
Vsat
(Volts)
Iin
(mA)
IC(on)
(mA)
2.0
5.5
2.0
5.5
0.4
2.5
250
Case 318–08 — SOT–23
MDC3105LT1
Devices listed in bold, italic are Motorola preferred devices.
Motorola Master Selection Guide
5.1–43
Small Signal Transistors, FETs and Diodes