AS2/4G2
Anti-series Air-bridged Schottky Diodes
GaAs varactor diodes
Description
The AS2/4G2 series of diodes from Teratech is
designed for advanced frequency multiplier
applications. These Schottky diodes are
fabricated on gallium arsenide and have gold
air-bridge structure designed to minimise the
parasitic capacitance. This series has four
identical anodes and is available in a range of
anode variations to suit your frequency and
power requirements.
80 μm
420 μm
Applications
The AS2/4G2 series of diodes is optimised for
frequency doubler applications but could be
used in a variety of other circuits.
Features

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


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Gold air-bridged structure
Very low junction capacitance
Very low parasitic capacitance
Wide range of anode variations
Low series resistance
100% electrically tested
100% visual inspection
Part number
Anode area (μm2)
Junction capacitance (fF)
AS2/4G2/6P6
AS2/4G2/7P9
AS2/4G2/9P1
AS2/4G2/10P4
AS2/4G2/11P5
6.6
7.9
9.1
10.4
11.5
9.8
11.7
13.6
15.4
17.2
Chip parameters
Parameter
Chip length
0Chip width
Chip thickness
Unit
Min.
Typ.
Max.
μm
μm
μm
410
70
45
420
80
50
430
90
55
To order these diodes please contact sales@teratechcomponents.com
www.teratechcompomponents.com
AS2/4G2
Stray
capacitance
(estimated)
(fF)
Breakdown
voltage at -1 μA
(V)
Forward voltage
at 1 μA
(V)
9.8
11.7
13.6
15.4
17.2
Reverse
saturation
current
(fA)
6.6
7.9
9.1
10.4
11.5
Series resistance
(Ω)
Junction
capacitance
(fF)
AS2/4G2/6P6
AS2/4G2/7P9
AS2/4G2/9P1
AS2/4G2/10P4
AS2/4G2/11P5
Notes:
Anode area
(μm2)
Part number
Electrical Parameters
1. Values are given per diode junction. For anti-parallel diode structures the stray capacitance is for the combined
structure.
2. This datasheet contains a range of typical and guaranteed performance data. Please contact Teratech if you require
further information.
Part Number Guide
AS1 / 4G2 / 21P6
Diode configuration
Diode series
AP - Anti-parallel
AS - Anti-series
SC - Series
Chip details
Series
number
1
2
3
...
Number
of
anodes
1
2
3
...
Anode
Substrate material
Schottky doping
density x1017cm-3
Anode area μm2
G - Gallium arsenide
A - Aluminium nitride
Q - Quartz
i.e. 2 x1017cm-3
i.e. 21.6 μm2
Registered business No.: 7461734 (England & Wales)
Registered office: Teratech Components Ltd, STFC Rutherford Appleton Laboratory, R25, Harwell Oxford, Didcot, OX11 0QX, UK.
Tel: +44 (0)1235 446542