Vishay Intertechnology, Inc.
s
TrenchFET ® GEN IV High-Performance
MOSFETs from
30 V to 60 V
ThunderFET ® High-Performance
MOSFETs from
80 V to 200 V
PowerPAK ® SC-70
PowerPAK SC-75
High-Performance
MOSFETs from
60 V to 150 V in
Ultra-Compact,
Thermally
Enhanced
Packages www.vishay.com

V I S H AY I N T E R T E C H N O L O GY, I N C .
LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFETs
Focus Products
Single N-Channel MOSFETs - 30 V to 80 V
R
DS(on)
(Ω) Q g
(nC)
PowerPAK ®
SO-8 / SO-8L 1212-8 / 1212-8S ChipFET ®
5 x 6 3 x 3 3 x 1.9
V
DS
(V)
V
GS
= 10 V V
GS
= 4.5 V V
GS
= 10 V V
GS
= 4.5 V
0.001
0.002
0.00215
0.00135
0.0027
0.0031
147
78
51
66
34.3
22.5
SiRA00DP
SiRA02DP
SiRA04DP
30
0.0025
0.0028
0.0034
0.0037
0.0043
0.0051
0.0064
0.0067
0.0035
0.0042
0.0044
0.005
51
37
51
34
22.5
17.3
22.5
15.4
SiRA06DP
SiRA36DP
SiRA10DP
SiRA12DP
SiRA14DP
SiSA04DN
SiS476DN
SiSA10DN
SiSA12ADN
SiSA14DN
SiRA34DP
0.0075
0.012
14.3
6.9
SiRA18DP SiSA18ADN
Increases power density and operates cooler with reduced power loss; R
DS(on)
down to less than 1 mΩ
0.002
0.0025
60 28.5
SiR640ADP
0.0024
0.003
56 27.2
SiR642DP
40 SiR644DP 0.0027
0.0024
0.0055
0.0027
0.006
0.0085
0.0085
0.0098
0.004
0.0032
0.0075
0.0035
29.5
19.4
19.7
16.7
47
58
21.3
64
13.6
9.4
8.8
8
21.3
28
9.8
30 SiR662DP
SiS488DN
60
0.0042
0.008
0.0085
0.032
0.0069
0.0125
0.0125
0.052
40
20.8
20.8
6.2
18.8
9.3
8.7
3
SiJ462DP
SiS862DN
Increase efficiency for synchronous rectification; low Q gd
/ Q gs
ratio enhances immunity to shoot-through
0.0055
0.0087
57 25 SiR826ADP
0.0063
0.0089
47.5
24 SiR880ADP
80
0.0062
0.008
0.0195
0.093
0.0095
0.0115
0.032
0.126
47
35.5
18.1
4.9
24
17.1
8.7
2.6
SiJ482DP
SiJ478DP
SiS468DN
Improves efficiency of isolated DC/DC; PowerPAK SO-8L option offers additional relief under thermal stress
Note
* Target specification, release in Q4 2014
Si5446DU
SC-70
2 x 2
SiA442DJ
LITTLE FOOT ®
SO-8 TSOP6
5 x 6 3 x 3
Si4010DY
Si4038DY
Si4062DY
Si3476DV*
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC
DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

V I S H AY I N T E R T E C H N O L O GY, I N C .
LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFETs
Focus Products
Single N-Channel MOSFETs - 100 V to 150 V
V
DS
(V)
R
DS(on)
(Ω) Q g
(nC) SO-8 / SO-8L
5 x 6
PowerPAK ®
1212-8 /
1212-8S
3 x 3
SC-70
2 x 2
SC-75
1.6 x 1.6
LITTLE FOOT ®
SO-8
5 x 6
SSOT23 /
SC70-6
3 x 3 / 2 x 2
V
GS
= 10 V V
GS
= 4.5 V V
GS
= 10 V V
GS
= 4.5 V
100
0.0066
0.0078
0.0087
0.0088
0.0091
0.0108
0.0140
0.0210
0.0230
0.0235
0.0830
0.126
0.185
0.200
0.0105
0.0115
0.012
0.0145
0.0180
0.0310
0.0315
0.130
0.189
0.310
0.320
53.5
44
39.5
44.4
36.9
32.8
27.9
16
19.6
19.1
6.5
5.2
3.3
3.3
25.2
26.7
19.5
20.7
16.3
13.9
10
9.7
9.5
3.5
2.9
1.8
1.8
SiR870ADP
SiR846ADP
SiR882ADP
SiJ470DP
SiR876ADP
SiR878ADP
Si7456DDP
SiSS40DN
SiS890DN
SiA416DJ
SiB456DK
Reduce all power loss elements in ZVS isolated DC/DC topologies; thermally enhanced solution down to 4 mm² package footprint
0.018
42.5
SiR872DP
150 0.058
0.177
9.5
5.3
SiS888DN
SiA446DJ
200 0.029
30 SiR690DP**
48 % R
DS
- Q g
FOM reduction to improve performance in DC/DC, solar micro inverters, and class-D amplifiers
Note
** Target specification, release in Q1 2015
Dual N-Channel MOSFETs and N & P Complementary MOSFETs
Package
Approximate
Footprint
Part Number Configurations V
DS
(V)
Si4190ADY
Si4056DY
V
GS
= 10 V
R
DS(on)
(Ω)
V
GS
= 4.5 V
Si7252DP Dual 100 0.017
PowerPAK SO-8 5 x 6
Si7946ADP* Dual 150 0.186
Si2392ADS
Si1480DH
Q g
(nC)
V
GS
= 10 V
17.5
5.3
PowerPAK
1212-8
3 x 3 SiS990DN Dual 100 0.085
5.2
SO-8 5 x 6 Si4590DY N & P
Integrated solution reduces component count in DC/DC conversion and BLDC motors
Note
* Target specification, release in Q4 2014
100
-100
0.057
0.183
0.072
0.205
7.5
24
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC
DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

• 30 % lower R generation
DS(on)
x Q g
FOM enables lower power losses than previous
• Exceptionally low Q gd
/ Q gs
ratios enhance immunity to shoot-through
• Includes thermally enhanced PowerPAK ® packaging for increased power densities
• A wide range of compact package sizes for optimization in a variety of applications
• DC/DC converters
• DC/AC inverters
• Synchronous rectification
• ORing, eFuse
Vishay’s new n-channel
MOSFETs with optimized R
DS(on)
Q gd
and Q
OSS by balancing conduction and
,
increase efficiency switching power losses
Providing high-performance, thermally enhanced power stage solutions for today’s power conversion topologies
An extensive range of solutions to achieve high efficiency and reliability
• www.vishay.com/mosfets/trenchfet-gen-iv/
• www.vishay.com/mosfets/medium-voltage/
Vishay is your true one-stop shop for building blocks in power conversion by providing high performance MOSFETs from 30 V to 650 V and power passive components.
A WORLD OF
SOLUTIONS
VMN-MS6926-1406