VS-300U(R) Series
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Vishay Semiconductors
Standard Recovery Diodes
(Stud Version), 300 A
FEATURES
• Alloy diode
• Popular series for rough service
• Stud cathode and stud anode version
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DO-205AB (DO-9)
TYPICAL APPLICATIONS
• Welders
PRODUCT SUMMARY
• Power supplies
IF(AV)
300 A
Package
DO-205AB (DO-9)
Circuit configuration
Single diode
• Motor controls
• Battery chargers
• General industrial current rectification
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
TC
VALUES
UNITS
300
A
150
°C
50 Hz
6550
60 Hz
6850
50 Hz
214
60 Hz
195
Range
400
V
-65 to 200
°C
A
IFSM
I2t
VRRM
TJ
kA2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-300U(R)..
Revision: 25-Nov-13
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ = 175 °C
mA
40
400
500
40
Document Number: 93508
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VS-300U(R) Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current 
at case temperature
IF(AV)
TEST CONDITIONS
180° conduction, half sine wave
t = 10 ms
Maximum peak, one cycle forward,
non-repetitive surge current
IFSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
I2t
Maximum value of threshold voltage
Maximum value of forward 
slope resistance
No voltage 
reapplied
100 % VRRM
reapplied
No voltage 
reapplied
VFM
UNITS
300
A
130
°C
6550
6850
A
5500
Sinusoidal half wave,
initial TJ = TJ maximum
5750
214
195
kA2s
151
100 % VRRM
reapplied
138
t = 0.1 to 10 ms, no voltage reapplied
VF(TO)
rf
Maximum forward voltage drop
VALUES
TJ = 200 °C
Ipk = 942 A, TJ = 25 °C
2140
kA2s
0.610
V
0.751
m
1.40
V
VALUES
UNITS
-65 to 200
°C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating and
storage temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.18
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.08
K/W
Maximum allowed mounting torque
+ 0 - 20 %
Not lubricated threads
37
Lubricated threads
28
Approximate weight
Nm
250
(JEDEC®)
Case style
see dimensions - link at the end of datasheet
g
DO-205AB (DO-9) (1)
Note
(1) 302U-A uses case style B-26
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.020
0.015
120°
0.024
0.025
90°
0.031
0.034
60°
0.045
0.047
30°
0.077
0.077
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 25-Nov-13
Document Number: 93508
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-300U(R) Series
200
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
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300U40AM20
RthJC (DC) = 0.18 K/W
180
Conduction Angle
160
140
30°
60°
90°
120°
120
0
50
180°
100 150 200 250 300 350
200
300U40AM20
RthJC (DC) = 0.18 K/W
190
180
170
Conduction Period
160
150
140
30°
130
90°
120
120°
110
0
Average Forward Current (A)
500
150
Conduction Angle
100
300U40AM20
Tj = 200°C
K/
W
0.4
K/
W
0.5
K/W
0.7
K/W
1K
/W
1.5 K
/W
aR
elt
-D
RMS Limit
200
K/
W
W
K/
0.1
Maximum Average Forward Power Loss (W)
0.
2
0.
3
50
400
=
250
300
A
hS
Rt
300
200
Fig. 2 - Current Ratings Characteristics
180°
120°
90°
60°
30°
350
100
180° DC
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
400
60°
3 K/W
0
0
50 100 150 200 250 300 350
250 50
Average Forward Current (A)
75
100 125 150 175 200
Maximum Allowable Ambient Temperature (°C)
500
DC
180°
120°
90°
60°
30°
450
-Δ
3
W
K/
W
0.
K/
K/
W
0.5
RMS Limit
200
0.7
Conduction Period
150
100
300U40AM20
Tj = 200°C
50
R
250
2
1
300
0.
0.
350
=
400
A
hS
Rt
Maximum Average Forward Power Loss (W)
Fig. 3 - Forward Power Loss Characteristics
K/W
K/W
1 K/
W
1.5 K
/W
3 K/W
0
0
100
200
300
400
Average Forward Current (A)
500
50
75
100 125 150
175
200
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
Revision: 25-Nov-13
Document Number: 93508
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-300U(R) Series
6000
Vishay Semiconductors
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
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At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 200°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
5500
5000
4500
4000
3500
3000
2500
2000
300U40AM20
1500
1
10
100
7000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial Tj = 200°C
6000
No Voltage Reapplied
5500
Rated Vrrm Reapplied
6500
5000
4500
4000
3500
3000
2500
2000
300U40AM20
1500
0.01
0.1
1
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Current (A)
10000
1000
Tj = 25°C
Tj = 200°C
100
300U40AM20
10
0
0.5
1
1.5
2
2.5
3
Instantaneous Forward Voltage (V)
Transient Thermal Impedance Z thJC (K/W)
Fig. 7 - Forward Voltage Drop Characteristics
1
0.1
Steady State Value
RthJC = 0.18 K/W
(DC Operation)
0.01
300U40AM20
0.001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Revision: 25-Nov-13
Document Number: 93508
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-300U(R) Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
300
U
-
1
2
3
4
40A M20
5
6
1
-
Vishay Semiconductors product
2
-
300 = Standard 300U device
3
-
U = Essential part number
5
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
6
-
Metric device M20 x 1.5
4
None = Stud normal polarity (cathode to stud)
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 25-Nov-13
www.vishay.com/doc?95340
Document Number: 93508
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
DO-205AB (DO-9) and B-26 for 300U(R) Series
DIMENSIONS FOR 300U(R)-A SERIES - DO-205AB (DO-9) in millimeters (inches)
4.32
19.18 (0.755)
MAX.
(0.1
MAX 70)
.
11.51 (0.453)
10.74 (0.423)
Ø 8.89 (0.350)
Ø 8.38 (0.330)
13.46 (0.530)
11.94 (0.470)
149.9 (5.90)
134.6 (5.30)
Ø 27.94 (1.10)
MAX.
53.34 (2.10)
MAX.
9.27 (0.365)
7.87 (0.310)
3.18 (0.125)
MAX.
Unthreaded
portion
21.03 (0.83)
20.14 (0.79)
31.75 (1.250)
Across flats
30.94 (1.218)
Ø 19.02 (0.749)
MAX.
3/4"-16UNF-2A
for metric device: M16 x 1.5
contact factory
DIMENSIONS FOR 302U(R)-A SERIES - B-26 in millimeters (inches)
3/8"-24UNF-2A
Ø 9.50 (0.374)
MAX.
16.51 (0.65)
14.99 (0.59)
18.29 (0.72)
Across flats
16.76 (0.66)
Ø 27.94 (1.10)
MAX.
58.67 (2.31)
55.63 (2.19)
28.45 (1.12)
MAX.
9.27 (0.365)
7.87 (0.310)
3.18 (0.125)
MAX.
21.03 (0.828)
20.14 (0.793)
31.75 (1.250) MAX.
Across flats
Ø 19.02 (0.749)
MAX.
3/4"-16UNF-2A
Document Number: 95340
Revision: 24-Jul-08
For technical questions, contact: indmodules@vishay.com
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Revision: 02-Oct-12
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