VS-85HF(R)40M8
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Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 85 A
FEATURES
• High surge current capability
• Stud cathode and stud anode version
• Leaded version available
• Types up to 400 V VRRM
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DO-203AB (DO-5)
TYPICAL APPLICATIONS
• Battery chargers
• Converters
PRODUCT SUMMARY
IF(AV)
85 A
Package
DO-203AB (DO-5)
Circuit configuration
Single diode
• Power supplies
• Machine tool controls
• Welding
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
TC
IF(RMS)
IFSM
I2t
VRRM
85HF(R)
400
85
A
140
°C
133
A
50 Hz
1700
60 Hz
1800
50 Hz
14 500
60 Hz
13 500
Range
TJ
UNITS
A
A2s
400
V
-65 to 180
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-85HF(R)
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
40
400
500
9
Revision: 12-Feb-14
Document Number: 93529
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-85HF(R)40M8
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current 
at case temperature
IF(AV)
Maximum RMS forward current
TEST CONDITIONS
85HF(R)
180° conduction, half sine wave
IF(RMS)
t = 10 ms
Maximum peak, one-cycle forward, non-repetitive
surge current
t = 8.3 ms
IFSM
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Value of threshold voltage
(up to 1200 V)
85
A
140
°C
133
A
No voltage 
reapplied
1700
100 % VRRM
reapplied
1450
No voltage 
reapplied
UNITS
1800
A
1500
Sinusoidal half wave,
initial TJ = TJ maximum
14 500
13 500
100 % VRRM
reapplied
A2s
10 500
9400
t = 0.1 ms to 10 ms, no voltage reapplied
A2s
16 000
0.68
TJ = TJ maximum
VF(TO)
Value of threshold voltage
(for 1400 V, 1600 V)
V
0.69
Value of forward slope resistance
(up to 1200 V)
1.62
TJ = TJ maximum
rf
Value of forward slope resistance
(for 1400 V, 1600 V)
mW
1.75
Maximum forward voltage drop
Ipk = 267 A, TJ = 25 °C, tp = 400 μs rectangular wave
VFM
1.2
V
85HF(R)
UNITS
-65 to 180
°C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating and
storage temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance, junction to case
RthJC
DC operation
0.35
Maximum thermal resistance, case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.25
Maximum allowable mounting torque + 0 %, - 10 %
Not lubricated thread, tighting on nut
3.4 (30)
Lubricated thread, tighting on nut
2.3 (20)
Not lubricated thread, tighting on hexagon
4.2 (37)
Lubricated thread, tighting on hexagon
3.2 (28)
Approximate weight
Unleaded device
Case style
See dimensions - link at the end of datasheet
K/W
N·m
(lbf · in)
17
g
0.6
oz.
DO-203AB (DO-5)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.10
0.08
120°
0.11
0.11
90°
0.13
0.13
60°
0.17
0.17
30°
0.26
0.26
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 12-Feb-14
Document Number: 93529
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-85HF(R)40M8
1 80
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
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85HF(R)
RthJC (DC) = 0.35 K/W
1 70
Conduction Angle
1 60
1 50
30°
60°
1 40
90°
120°
180°a
1 30
0
10
20
30
40
50
60
70
80
90
100
IF(AV) - Average Forward Current (A)
180
85HF(R)
RthJC (DC) = 0.35 K/W
170
Conduction Period
160
150
30°
60°
140
120°
0
60
80
100
120
140
=0
A
hS
Rt
W
K/
K/
60
80 100 120 140 160 180
7
5
0.
W
2K
/W
.5
W
K/
RMS Limit
3K
/W
aR
elt
50
-D
Maximum Average Forward
Power Loss (W)
40
W
1.
K/
60
20
IF(AV) - Average Forward Current (A)
1
70
DC
Fig. 2 - Current Ratings Characteristics
180°
120°
90°
60°
30°
80
180°
130
Fig. 1 - Current Ratings Characteristics
90
90°
40
5 K/
W
Conduction Angle
30
20
10 K/W
85HF(R)
Tj = 180˚C
10
0
0
10
20
30
40
50
60
70
80
IF(AV) - Average Forward Current (A)
90
20
40
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
Rt
W
A
hS
60
80
=
K/
7
/W
5
1.5
0.
K/
K/
W
W
80
K
100
0.
DC
180°
120°
90°
60°
30°
1
2K
-D
/W
a
60 RMS Limit
elt
3K
R
Maximum Average Forward
Power Loss (W)
120
/W
40
Conduction Period
5 K/W
20
85HF(R)
Tj = 180˚C
10 K/W
0
0
20
40
60
80
100
120
IF(AV) - Average Forward Current (A)
140
20
40
100
120 140 160 180
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
Revision: 12-Feb-14
Document Number: 93529
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-85HF(R)40M8
Instantaneous Forward Current (A)
1600
Vishay Semiconductors
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = Tj Max.
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1400
1200
1000
800
600
85HF(R)
400
1
10
10 000
Tj = 25°C
Tj = Tj Max.
1000
100
85HF(R)
10
0
100
1
2
3
4
5
6
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
Instantaneous Forward Voltage (V)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
1800
1600
1400
ZthJC - Transient Thermal Impedance (K/W)
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
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Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial Tj = Tj Max.
No Voltage Reapplied
Rated Vrrm Reapplied
1200
1000
800
600
400
200
0.01
85HF(R)
0.1
1
Pulse Train Duration (s)
10
Steady State Value
RthJC = 0.35 K/W
1
(DC Operation)
0.1
0.01
85HF(R)
0.001
0.0001
0.001
0.01
0.1
1
10
t - Square Wave Pulse Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 8 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
85
HF
R
40
M8
1
2
3
4
5
6
1
-
Vishay Semiconductors product
2
-
85 = Standard device
3
-
HF = Standard diode
4
-
None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
5
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
6
-
M8 = Stud base DO-203AB (DO-5) M8 x 1.25
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95342
Revision: 12-Feb-14
Document Number: 93529
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
DO-203AB (DO-5) for 85HF(R) Series
DIMENSIONS in millimeters (inches)
Ø 15.1 (0.59)
6.1/7
(0.24/0.27)
4 (0.16)
4 (0.16) MIN.
25.4 (1) MAX.
10.8 (0.42)
11.4 (0.45)
11.1 ± 0.4
(0.44 ± 0.02)
1/4" 28UNF-2A
For metric devices: M8 x 1.25
M6 x 1
1.20 (0.04)
17.35 (0.68)
Revision: 18-Nov-14
Document Number: 95342
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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Revision: 13-Jun-16
1
Document Number: 91000
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