NTMD6N02R2
Power MOSFET
6.0 Amps, 20 Volts
N−Channel Enhancement Mode
Dual SO−8 Package
http://onsemi.com
Features
•
•
•
•
•
•
•
•
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature Dual SOIC−8 Surface Mount Package
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
SOIC−8 Mounting Information Provided
Pb−Free Package is Available
VDSS
RDS(ON) TYP
ID MAX
20 V
35 mW @ VGS = 4.5 V
6.0 A
N−Channel
D
G
Applications
• DC−DC Converters
• Low Voltage Motor Control
• Power Management in Portable and Battery−Powered Products,
for example, Computers, Printers, Cellular and Cordless Telephones
and PCMCIA Cards
S
SOIC−8
CASE 751
STYLE 11
8
1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Value
Unit
VDSS
20
V
Drain−to−Gate Voltage (RGS = 1.0 MW)
VDGR
20
V
Gate−to−Source Voltage − Continuous
VGS
"12
V
RqJA
PD
ID
ID
IDM
62.5
2.0
6.5
5.5
50
°C/W
W
A
A
A
Thermal Resistance,
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Pulsed Drain Current (Note 4)
RqJA
PD
ID
ID
IDM
102
1.22
5.07
4.07
40
°C/W
W
A
A
A
Thermal Resistance
Junction−to−Ambient (Note 3)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Pulsed Drain Current (Note 4)
RqJA
PD
ID
ID
IDM
172
0.73
3.92
3.14
30
°C/W
W
A
A
A
Source 2
Gate 2
1
8
2
7
3
4
6
5
Drain 1
Drain 1
Drain 2
Drain 2
(Top View)
E6N02 = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTMD6N02R2
NTMD6N02R2G
1. Mounted onto a 2 in square FR−4 Board
(1 in sq. 2 oz. Cu 0.06 in thick single sided), t < 10 seconds.
2. Mounted onto a 2 in square FR−4 Board
(1 in sq. 2 oz. Cu 0.06 in thick single sided), t = steady state.
3. Minimum FR−4 or G−10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.
August, 2005 − Rev. 3
Source 1
Gate 1
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Pulsed Drain Current (Note 4)
© Semiconductor Components Industries, LLC, 2005
MARKING DIAGRAM
& PIN ASSIGNMENT
E6N02
ALYWG
G
Symbol
Drain−to−Source Voltage
Package
Shipping †
SOIC−8
2500/Tape & Reel
SOIC−8
(Pb−Free)
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
Publication Order Number:
NTMD6N02R2/D
NTMD6N02R2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (continued)
Rating
Operating and Storage Temperature Range
Symbol
Value
Unit
TJ, Tstg
−55 to +150
°C
EAS
360
mJ
TL
260
°C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 5.0 Vdc, Peak IL = 6.0 Apk, L = 20 mH, RG = 25 W)
Maximum Lead Temperature for Soldering Purposes for 10 seconds
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 5)
Characteristic
Symbol
Min
Typ
Max
20
−
−
19.2
−
−
−
−
−
−
1.0
10
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Vdc
mV/°C
mAdc
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 25°C)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate−Body Leakage Current (VGS = +12 Vdc, VDS = 0 Vdc)
IGSS
−
−
100
nAdc
Gate−Body Leakage Current (VGS = −12 Vdc, VDS = 0 Vdc)
IGSS
−
−
−100
nAdc
0.6
−
0.9
−3.0
1.2
−
−
−
−
−
0.028
0.028
0.033
0.035
0.035
0.043
0.048
0.049
gFS
−
10
−
Mhos
Ciss
−
785
1100
pF
Coss
−
260
450
Crss
−
75
180
td(on)
−
12
20
tr
−
50
90
td(off)
−
45
75
tf
−
80
130
td(on)
−
11
18
tr
−
35
65
td(off)
−
45
75
tf
−
60
110
Qtot
−
12
20
Qgs
−
1.5
−
Qgd
−
4.0
−
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = −250 mAdc)
Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−State Resistance
(VGS = 4.5 Vdc, ID = 6.0 Adc)
(VGS = 4.5 Vdc, ID = 4.0 Adc)
(VGS = 2.7 Vdc, ID = 2.0 Adc)
(VGS = 2.5 Vdc, ID = 3.0 Adc)
RDS(on)
Forward Transconductance (VDS = 12 Vdc, ID = 3.0 Adc)
Vdc
mV/°C
W
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Notes 6 and 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 16 Vdc, ID = 6.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 W)
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 16 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 W)
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
(VDS = 16 Vdc,
VGS = 4.5 Vdc,
ID = 6.0 Adc)
5. Handling precautions to protect against electrostatic discharge is mandatory
6. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.
7. Switching characteristics are independent of operating junction temperature.
http://onsemi.com
2
ns
ns
nC
NTMD6N02R2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (continued) (Note 8)
Characteristic
Symbol
Min
Typ
Max
Unit
VSD
−
−
−
0.83
0.88
0.75
1.1
1.2
−
Vdc
trr
−
30
−
ns
ta
−
15
−
tb
−
15
−
QRR
−
0.02
−
BODY−DRAIN DIODE RATINGS (Note 9)
Diode Forward On−Voltage
(IS = 4.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
mC
8. Handling precautions to protect against electrostatic discharge is mandatory.
9. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.
2.5 V
12
2.0 V
4.5 V
3.2 V
ID, DRAIN CURRENT (AMPS)
10
TJ = 25°C
8
1.8 V
6
4
VGS = 1.5 V
2
0
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
10 V
0
0.25
0.5
0.75
1
1.25
1.5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
0.07
ID = 6.0 A
TJ = 25°C
0.06
0.05
0.04
0.03
0.02
0.01
0
0
2
4
6
8
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
VDS ≥ 10 V
10
8
6
4
10
25°C
100°C
TJ = −55°C
2
0
1.75
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
I D, DRAIN CURRENT (AMPS)
12
0.5
1
1.5
2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
2.5
Figure 2. Transfer Characteristics
0.05
TJ = 25°C
0.04
VGS = 2.5 V
0.03
4.5 V
0.02
0.01
1
Figure 3. On−Resistance versus
Gate−To−Source Voltage
3
5
7
9
ID, DRAIN CURRENT (AMPS)
11
13
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
http://onsemi.com
3
1.6
1000
ID = 6.0 A
VGS = 4.5 V
1.4
I DSS , LEAKAGE (nA)
1.2
1
VGS = 0 V
TJ = 125°C
100
100°C
10
1
25°C
0.1
0.8
0.6
−50
0.01
−25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
4
150
VDS = 0 V
2000
VGS = 0 V
TJ = 25°C
Ciss
1500
Crss
1000
Ciss
500
Coss
Crss
0
10
5
0
5
10
15
VGS VDS
20
5
20
QT
4
16
VDS
VGS
3
12
Q1
2
ID = 6 A
VDS = 16 V
VGS = 4.5 V
TJ = 25°C
Q2
8
4
1
0
0
0
4
8
12
16
Qg, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
Figure 7. Capacitance Variation
1000
VDS = 16 V
ID = 6.0 A
VGS = 4.5 V
t, TIME (ns)
C, CAPACITANCE (pF)
2500
100
tf
tr
td(off)
td(on)
10
1
20
Figure 6. Drain−To−Source Leakage Current
versus Voltage
VGS , GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
8
12
16
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
10
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
http://onsemi.com
4
100
V DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
NTMD6N02R2
NTMD6N02R2
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
100
VGS = 0 V
TJ = 25°C
4
3
2
1
0
VGS = 20 V
SINGLE PULSE
TC = 25°C
I D , DRAIN CURRENT (AMPS)
I S, SOURCE CURRENT (AMPS)
5
1 ms
10 ms
1
0.1
0
0.2
0.4
0.6
0.8
1.0
100 ms
10
1.2
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
dc
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
Figure 12. Diode Reverse Recovery Waveform
TYPICAL ELECTRICAL CHARACTERISTICS
Rthja(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
0.1
D = 0.5
0.2
0.1
0.05
P(pk)
0.02
0.01
0.01
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
0.001
1.0E−05
1.0E−04
1.0E−03
1.0E−02
1.0E−01
1.0E+00
t, TIME (s)
Figure 13. Thermal Response
http://onsemi.com
5
1.0E+01
1.0E+02
1.0E+03
NTMD6N02R2
PACKAGE DIMENSIONS
SOIC−8
CASE 751−07
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
−X−
A
8
5
0.25 (0.010)
S
B
1
M
Y
M
4
K
−Y−
G
C
N
DIM
A
B
C
D
G
H
J
K
M
N
S
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
D
0.25 (0.010)
M
Z Y
S
X
M
J
S
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8_
0.25
0.50
5.80
6.20
STYLE 11:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
SOLDERING FOOTPRINT*
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
SOURCE 1
GATE 1
SOURCE 2
GATE 2
DRAIN 2
DRAIN 2
DRAIN 1
DRAIN 1
1.52
0.060
7.0
0.275
4.0
0.155
SCALE 6:1
0.6
0.024
1.270
0.050
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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6
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For additional information, please contact your
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NTMD6N02R2/D