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FDP7030BL/FDB7030BL
N-Channel Logic Level PowerTrench MOSFET
General Description
Features
This N-Channel Logic Level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
• 60 A, 30 V
RDS(ON) = 9 mΩ @ VGS = 10 V
RDS(ON) = 12 mΩ @ VGS = 4.5 V
• Critical DC electrical parameters specified at
elevated temperature
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
• High performance trench technology for extremely
low RDS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
• 175°C maximum junction temperature rating
It has been optimized for low gate charge, low RDS(ON)
and fast switching speed.
D
D
G
G
D
G
S
TO-220
TO-263AB
FDP Series
S
FDB Series
Absolute Maximum Ratings
Symbol
S
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
A
PD
Parameter
– Continuous
(Note 1)
60
– Pulsed
(Note 1)
180
60
W
0.4
W/°C
–65 to +175
°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
2.5
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDB7030BL
FDB7030BL
13’’
24mm
800 units
FDP7030BL
FDP7030BL
Tube
n/a
45
2003 Fairchild Semiconductor Corporation
FDP7030BL/FDB7030BL Rev D1(W)
FDP7030BL/FDB7030BL
October 2003
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min Typ
Max
Units
73
mJ
60
A
Drain-Source Avalanche Ratings (Note 1)
WDSS
IAR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
VDD = 15 V,
ID = 60 A
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V,
VGS = 0 V
1
µA
IGSS
Gate–Body Leakage
VGS = ± 20 V,
VDS = 0 V
± 100
nA
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
30
V
mV/°C
22
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source On–
Resistance
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
1
1.9
3
V
mV/°C
–5
ID(on)
On–State Drain Current
VGS = 10 V,
ID = 30 A
VGS = 4.5 V,
ID = 25 A
VGS= 10 V, ID = 30 A, TJ=125°C
VGS = 10 V,
VDS = 10 V
gFS
Forward Transconductance
VDS = 10V,
ID = 30 A
85
S
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
1760
pF
440
pF
185
pF
VGS = 15 mV,
f = 1.0 MHz
1.2
Ω
VDD = 15V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
12
22
ns
6.8
8.5
10.1
9
12
18
30
mΩ
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
(Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
12
22
ns
td(off)
Turn–Off Delay Time
30
48
ns
tf
Turn–Off Fall Time
19
33
ns
Qg
Total Gate Charge
17
24
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = 15 V,
VGS = 5 V
ID = 30 A,
5.4
nC
6.4
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VGS = 0 V,
IS = 30 A
IF = 30 A,
diF/dt = 100 A/µs
(Note 1)
0.92
60
A
1.3
V
30
nS
20
nC
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDP7030BL/FDB7030BL Rev D1(W)
FDP7030BL/FDB7030BL
Electrical Characteristics
FDP7030BL/FDB7030BL
Typical Characteristics
1.8
180
6.0V
ID, DRAIN CURRENT (A)
150
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS=10V
4.5V
120
4.0V
90
3.5V
60
30
3.0V
VGS = 3.5V
3.5V
1.6
1.4
4.0V
4.5V
5.0V
1.2
6.0V
10V
1
0.8
0
0
1
2
3
4
0
5
20
Figure 1. On-Region Characteristics.
80
100
0.030
ID = 30A
VGS =10V
ID = 30A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
60
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.8
0.6
0.025
0.020
TA = 125oC
0.015
0.010
o
TA = 25 C
0.005
-50
-25
0
25
50
75
100
125
o
TJ, JUNCTION TEMPERATURE ( C)
150
2
175
Figure 3. On-Resistance Variation with
Temperature.
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
90
1000
VDS = 5V
IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
75
ID, DRAIN CURRENT (A)
40
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
60
45
o
TA = 125 C
o
-55 C
30
o
25 C
15
100
TA = 125oC
10
1
25oC
0.1
-55oC
0.01
0.001
0
1.5
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
4
Figure 5. Transfer Characteristics.
4.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP7030BL/FDB7030BL Rev D1(W)
2500
VDS = 10V
ID = 30A
f = 1MHz
VGS = 0 V
20V
2000
8
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
15V
6
4
1500
1000
Coss
2
500
0
0
Crss
0
5
10
15
20
25
Qg, GATE CHARGE (nC)
30
0
35
10
15
20
25
30
Figure 8. Capacitance Characteristics.
5000
P(pk), PEAK TRANSIENT POWER (W)
1000
10µs
RDS(ON) LIMIT
100µs
100
1mS
10mS
100m
DC
10
VGS = 10V
SINGLE PULSE
RθJC = 2.5oC/W
o
TA = 25 C
1
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
SINGLE PULSE
RθJC = 2.5°C/W
TA = 25°C
4000
3000
2000
1000
0
0.00001
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
ID, DRAIN CURRENT (A)
Ciss
0.0001
0.001
0.01
t1, TIME (sec)
0.1
1
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJC(t) = r(t) * RθJC
RθJC = 2.5 °C/W
0.2
0.1
P(pk
0.1
t1
t2
TJ - TA = P * RθJC(t)
Duty Cycle, D = t1 / t2
0.05
0.02
0.01
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
FDP7030BL/FDB7030BL Rev D1(W)
FDP7030BL/FDB7030BL
Typical Characteristics
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FACT Quiet Series™
ActiveArray™
FAST
Bottomless™
FASTr™
CoolFET™
FRFET™
CROSSVOLT™ GlobalOptoisolator™
DOME™
GTO™
EcoSPARK™ HiSeC™
E2CMOSTM
I2C™
TM
EnSigna
ImpliedDisconnect™
FACT™
ISOPLANAR™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
UltraFET
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I5
Mouser Electronics
Authorized Distributor
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FDP7030BL