FDS8984
N-Channel PowerTrench® MOSFET
tm
30V, 7A, 23mΩ
General Description
Features
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
„ Max rDS(on) = 23mΩ, VGS = 10V, ID = 7A
„ Max rDS(on) = 30mΩ, VGS = 4.5V, ID = 6A
„ Low gate charge
„ 100% RG tested
„ RoHS Compliant
DD2
DD2
D1
D
5
DD1
4
Q2
6
SO-8
Pin 1 SO-8
G2
S2 G
G1 S
S1 S
3
2
7
Q1
8
S
1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current Continuous
ID
Ratings
30
Units
V
±20
V
(Note 1a)
Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalache Energy
(Note 2)
7
A
30
A
32
mJ
Power Dissipation for Single Operation
1.6
W
Derate above 25°C
13
mW/°C
-55 to 150
°C
(Note 1a)
78
°C/W
(Note 1)
40
°C/W
Operating and Storage Temperature
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
FDS8984
Device
FDS8984
©2007 Fairchild Semiconductor Corporation
FDS8984 Rev. A1
Package
SO-8
Reel Size
330mm
1
Tape Width
12mm
Quantity
2500 units
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FDS8984 N-Channel PowerTrench® MOSFET
May 2007
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to
25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24V
VGS = 0V
IGSS
Gate to Source Leakage Current
VGS = ±20V,VDS = 0V
30
V
23
mV/°C
1
TJ = 125°C
250
µA
±100
nA
2.5
V
On Characteristics (Note 3)
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = 250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to
25°C
VGS = 10V, ID = 7A
19
23
Drain to Source On Resistance
VGS = 4.5V, ID = 6A
24
30
VGS = 10V, ID = 7A,
TJ = 125°C
26
32
rDS(on)
1.2
1.7
- 4.3
mV/°C
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VDS = 15V, VGS = 0V,
f = 1.0MHz
475
635
pF
100
135
pF
65
100
pF
f = 1MHz
0.9
1.6
Ω
Switching Characteristics (Note 3)
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 15V, ID = 7A
VGS = 10V, RGS = 33Ω
VDS = 15V, VGS = 10V,
ID = 7A
VDS = 15V, VGS = 5V,
ID = 7A
5
10
ns
9
18
ns
42
68
ns
21
34
ns
9.2
13
nC
5.0
7
nC
1.5
nC
2.0
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
ISD = 7A
0.9
1.25
V
ISD = 2.1A
0.8
1.0
V
IF = 7A, di/dt = 100A/µs
33
ns
20
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.
a) 78°C/W when
mounted on a 0.5in2
pad of 2 oz copper
b) 125°C/W when
mounted on a 0.02 in2
pad of oz copper
c) 135°C/W when
mounted on a
minimun pad
Scale 1 : 1 on letter size paper
2: Starting TJ = 25°C, L = 1mH, IAS = 8A, VDD = 27V, VGS = 10V.
3: Pulse Test:Pulse Width <300µs, Duty Cycle <2%.
2
FDS8984 Rev. A1
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FDS8984 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
RDS(ON), NORMALIZED
ID, DRAIN CURRENT (A)
VGS=10V PULSE DURATION =80µS
DUTY CYCLE =0.5% MAX
VGS=5.0V
VGS=3.5V
20
VGS=4.5V
VGS=4.0V
10
VGS=3.0V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Figure 1. On Region Characteristics
RDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mOHM)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID = 7A
VGS = 10V
1.2
1.0
0.8
-40
0
40
80
120
PULSE DURATION =80µS
DUTY CYCLE =0.5% MAX
2.5
VGS=3.0V
2.0
VGS=3.5V
VGS=4.0V
1.5
1.0
VGS=5.0V
0.5
5
160
Figure 3. On Resistance vs Temperature
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
O
TJ = 150 C
15
O
TJ = 25 C
10
5
0
O
TJ = - 55 C
1
2
3
VGS, GATE TO SOURCE VOLTAGE (V)
4
25
30
50
45
40
TJ = 125oC
35
30
25
20
15
TJ = 25oC
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
10
1
VGS = 0V
TJ = 150oC
TJ = 25oC
0.1
TJ = -55oC
0.01
1E-3
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs Source Current
3
FDS8984 Rev. A1
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
ID = 7A
55
30
VDD = 5V
20
15
Figure 4. On-Resistance vs Gate to Source
Votlage
PULSE DURATION =80µS
DUTY CYCLE =0.5% MAX
25
10
VGS=10V
60
TJ, JUNCTION TEMPERATURE (oC)
30
VGS=4.5V
Figure 2. On-Resistance vs Drain Current and
Gate Voltage
1.6
0.6
-80
3.0
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
1.4
DRAIN-SOURCE ON-RESISTANCE
30
= 25°C unless otherwise noted
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FDS8984 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ
= 25°C unless otherwise noted
700
VGS, GATE TO SOURCE VOLTAGE(V)
10
600
CISS
VDD = 15V
VDD = 10V
6
4
CAPACITANCE (pF)
8
VDD = 20V
2
500
f = 1MHz
VGS = 0V
400
COSS
300
200
100
0
0
2
4
6
Qg, GATE CHARGE(nC)
8
10
CRSS
0.1
Figure 7. Gate Charge Characteristics
10
30
Figure 8. Capacitance vs Drain to Source Voltage
8
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
20
10
O
STARTING TJ = 25 C
O
STARTING TJ = 125 C
1
0.01
0.1
7
6
VGS=10V
5
4
VGS=4.5V
3
2
1
1
10
0
25
20
P(PK), PEAK TRANSIENT POWER (W)
10us
0.1
0.01
0.1
100us
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
10ms
100ms
1s
SINGLE PULSE
TJ = MAX RATED
TA = 25oC
DC
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 11. Forward Bias Safe Operating Area
125
150
3000
TA = 25oC
1000
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
100
150 – T
A
-----------------------125
I = I25
VGS=10V
10
SINGLE PULSE
1
-5
10
-4
10
-3
10
-2
-1
0
1
10
10
10
10
t, PULSE WIDTH (s)
2
10
3
10
Figure 12. Single Pulse Maximum Power
Dissipation
4
FDS8984 Rev. A1
100
Figure 10. Maximum Continuous Drain Current vs
Ambient Temperature
100
1
75
TA, AMBIENT TEMPERATURE ( C)
Figure 9. Unclamped Inductive Switching
Capability
10
50
o
tAV, TIME IN AVALANCHE (mS)
ID, DRAIN CURRENT (A)
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
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FDS8984 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ
Normalized Thermal
Impedance ZθJA
2
1
0.1
= 25°C unless otherwise noted
DUTY CYCLE - DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.01
t1
1E-3
1E-4
-5
10
t2
SINGLE PULSE
-4
10
-3
10
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
-2
-1
10
10
0
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION(s)
Figure 13. Transient Thermal Response Curve
5
FDS8984 Rev. A1
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FDS8984 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ
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SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
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which, (a) are intended for surgical implant into the body or (b)
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properly used in accordance with instructions for use provided in
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner
without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will
be published at a later date. Fairchild Semiconductor reserves the
right to make changes at any time without notice to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at any time
without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor.The datasheet is printed
for reference information only.
Rev. I27
FDS8984 Rev. A1
6
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FDS8984 N-Channel PowerTrench® MOSFET
tm