Lecture #33 OUTLINE The MOS Capacitor: • C-V examples • Impact of oxide charges Reading: Chapter 18.1, 18.2 Spring 2007 EE130 Lecture 33, Slide 1 Examples: C-V Characteristics C QS Cox HF-Capacitor VFB VT VG Does the QS or the HF-capacitor C-V characteristic apply? (1) MOS capacitor, f=10kHz. (2) MOS transistor, f=1MHz. (3) MOS capacitor, slow VG ramp. (4) MOS transistor, slow VG ramp. Spring 2007 EE130 Lecture 33, Slide 2 Example: Effect of Doping C/Cox 1 VFB VT VG • How would C-V characteristic change if substrate doping NA were increased? – VFB – VT – Cmin Spring 2007 EE130 Lecture 33, Slide 3 Example: Effect of Oxide Thickness C/Cox 1 VFB VT VG • How would C-V characteristic change if oxide thickness xo were decreased? – VFB – VT – Cmin Spring 2007 EE130 Lecture 33, Slide 4 Oxide Charges In real MOS devices, there is always some charge in the oxide and at the Si/oxide interface. • In the oxide: – Trapped charge Qot • High-energy electrons and/or holes injected into oxide – Mobile charge QM • Alkali-metal ions, which have sufficient mobility to drift in oxide under an applied electric field • At the interface: – Fixed charge QF • Excess Si (?) – Trapped charge QIT • Dangling bonds Spring 2007 EE130 Lecture 33, Slide 5 Effect of Oxide Charges • In general, charges in the oxide cause a shift in the gate voltage required to reach the threshold condition: VT xo 1 SiO 2 x ox ( x)dx 0 (x defined to be 0 at metal-oxide interface) • In addition, they may alter the field-effect mobility of mobile carriers (in a MOSFET) due to Coulombic scattering Spring 2007 EE130 Lecture 33, Slide 6 Fixed Oxide Charge QF M 3.1 eV O S qQF / Cox Ec= EFM |qVFB | Ev Ec EFS Ev 4.8 eV Spring 2007 EE130 Lecture 33, Slide 7 VFB MS QF Cox Parameter Extraction from C-V From a single C-V measurement, we can extract much information about the MOS device. • Suppose we know that the gate-electrode material is heavily doped n-type poly-Si (FM=4.05eV), and that the gate dielectric is SiO2 (r=3.9): – From Cmax = Cox we determine the oxide thickness xo – From Cmin and Cox we determine substrate doping (by iteration) – From substrate doping and Cox we calculate the flat-band capacitance CFB – From the C-V curve, we can find VFB VG C C FB – From FM, FS, Cox, and VFB we can determine Qf Spring 2007 EE130 Lecture 33, Slide 8 Determination of FM and QF Measure C-V characteristics of capacitors with different oxide thicknesses. Plot VFB as a function of xo: VFB 10nm 20nm 30nm xo 0 VFB MS –0.15V Spring 2007 SiO 2 –0.3V xo EE130 Lecture 33, Slide 9 QF Mobile Ions • Odd shifts in C-V characteristics were once a mystery: VFB QM Cox • Source of problem: Mobile charge moving to/away from interface, changing charge centroid Spring 2007 EE130 Lecture 33, Slide 10 Interface Traps Traps cause “sloppy” C-V and also greatly degrade mobility in channel QIT (S ) VG Cox Spring 2007 EE130 Lecture 33, Slide 11