6.012 - Microelectronic Devices and Circuits - Fall 2005
Lecture 13 - Digital Circuits (II)
MOS Inverter Circuits
October 25, 2005
Contents:
1. NMOS inverter with resistor pull-up (cont.)
2. NMOS inverter with current-source pull-up
3. Complementary MOS (CMOS) Inverter
Reading assignment:
Howe and Sodini, Ch. 5, §5.3
Lecture 13-1
6.012 - Microelectronic Devices and Circuits - Fall 2005
Lecture 13-2
Key questions
• What are the key design trade-offs of the NMOS inverter with resistor pull-up?
• How can one improve upon these trade-offs?
• What is special about a CMOS inverter?
Lecture 13-3
6.012 - Microelectronic Devices and Circuits - Fall 2005
1. NMOS inverter with resistor pull-up (cont.)
V+=VDD
VOUT=VDS
VOH=VMAX=VDD
R
IR
slope= Av(VM)
VOUT=VIN
VOUT
VM
ID
VIN
CL
VOL=VMIN
0
0
VT
VM
VIL
VDD
VIN=VGS
VIH
2 Noise margins:
N ML = VIL − VOL = VM −
N MH = VOH −VIH
VM AX − VM
− VM IN
|Av (VM )|
1
VM IN
= VM AX −VM (1+
)+
|Av (VM )| |Av (VM )|
Need to compute |Av (VM )|.
Lecture 13-4
6.012 - Microelectronic Devices and Circuits - Fall 2005
Small-signal equivalent circuit model at VM (transistor in
saturation):
R
D
G
+
+
vin
vgs
-
-
+
gmvgs
ro
vout
-
S
+
+
vin
gmvin
ro//R
-
vout
-
vout = −gm vin(ro//R)
Then:
Av =
vout
= −gm(ro //R) −gm R
vin
Then:
|Av (VM )| = gm (VM )R
From here, get N ML and N MH using above formulae.
Lecture 13-5
6.012 - Microelectronic Devices and Circuits - Fall 2005
2 Dynamics
• CL pull-down limited by current through transistor
[will study in detail with CMOS]
• CL pull-up limited by resistor (tP LH ∼ RCL)
• pull-up slowest
VDD
VDD
R
R
VOUT:
LO HI
VOUT:
HI LO
VIN:
LO HI
CL
pull-down
VIN:
HI LO
CL
pull-up
6.012 - Microelectronic Devices and Circuits - Fall 2005
Lecture 13-6
2 Inverter design issues:
noise margins ↑ ⇒ |Av | ↑ ⇒
• R ↑ ⇒ RCL ↑ ⇒ slow switching
• gm ↑ ⇒ W ↑ ⇒ big transistor
(slow switching at input)
Trade-off
Trade-off between speed
speed and noise margin.
margin.
During pull-up, need:
• high current for fast switching,
• but also high resistance for high noise margin.
⇒ use current source as pull-up.
Lecture 13-7
6.012 - Microelectronic Devices and Circuits - Fall 2005
2. NMOS inverter with current-source pull-up
I-V characteristics of current source:
iSUP
+
vSUP
1
roc
ISUP
iSUP
_
0
0
vSUP
Equivalent circuit models:
iSUP
+
vSUP
ISUP
roc
roc
_
large-signal model
small-signal model
• high current throughout voltage range: iSU P ISU P
• high small-signal resistance, roc.
Lecture 13-8
6.012 - Microelectronic Devices and Circuits - Fall 2005
NMOS inverter with current-source pull-up:
load line
VDD
iSUP=ID
VGS=VDD
iSUP
ISUP
VGS=VIN
VOUT
VIN
CL
VGS=VT
0
0
VDD
Transfer characteristics:
VOUT
VDD
0
0
VT
High roc ⇒ high noise margin
VDD
VIN
VDS
Lecture 13-9
6.012 - Microelectronic Devices and Circuits - Fall 2005
Dynamics:
VDD
VDD
iSUP
iSUP
VOUT:
HI LO
VIN:
LO HI
CL
pull-down
VOUT:
LO HI
VIN:
HI LO
CL
pull-up
Fas pull-up because capacitor charged at constant curFaster
rent.
Lecture 13-10
6.012 - Microelectronic Devices and Circuits - Fall 2005
2 PMOS as current-source pull-up
I-V characteristics of PMOS:
S
G
IDp
D
-IDp
-IDp
saturation
VSGp
VSGp=-VTp
0
0
0
VSDp
0
-VTp
Note: enhancement-mode PMOS has VT p < 0.
In saturation:
−IDp ∝ (VSG + VT p )2
VSGp
Lecture 13-11
6.012 - Microelectronic Devices and Circuits - Fall 2005
Circuit and load-line diagram of inverter with PMOS current source pull-up:
VDD
PMOS load line for VSG=VDD-VB
-IDp=IDn
VDD
VB
VOUT
VIN
VIN
CL
0
0
VDD
Transfer function:
NMOS cutoff
PMOS triode
VOUT
NMOS saturation
PMOS triode
VDD
NMOS saturation
PMOS saturation
NMOS triode
PMOS saturation
0
0
VTn
VDD
VIN
VOUT
Lecture 13-12
6.012 - Microelectronic Devices and Circuits - Fall 2005
Noise margin:
• compute VM = VIN = VOU T
• compute |Av (VM )|
At VM both transistors saturated:
IDn =
−IDp =
Wn
µnCox (VM − VT n )2
2Ln
Wp
µp Cox(VDD − VB + VT p )2
2Lp
And:
IDn = −IDp
Then:
VM = VT n +
�
�
�
�
�
�
�
�
�
p
µp W
Lp
Wn (VDD
µn L n
− VB + VT p )
Lecture 13-13
6.012 - Microelectronic Devices and Circuits - Fall 2005
Small-signal equivalent circuit model at VM :
S2
+
gmpvsg2
vsg2=0
-
+
vin
-
rop
G2
D2
G1
+
D1
+
vgs1
gmnvgs1
ron
-
vout
-
S1
+
vin
+
gmnvin
ron//rop
-
vout
-
Av = −gmn (ron//rop )
6.012 - Microelectronic Devices and Circuits - Fall 2005
Lecture 13-15
Screen shots of NMOS inverter transfer characteristics:
2 NMOS inverter with resistor pull-up
2 NMOS inverter with current source pull-up
Lecture 13-14
6.012 - Microelectronic Devices and Circuits - Fall 2005
NMOS inverter with current-source pull-up allows fast
switching with high noise margins.
But... when VIN = VDD , there is a direct current path
between supply and ground
⇒ power consumption even if inverter is idling.
VDD
PMOS load line for VSG=VDD-VB
-IDp=IDn
VDD
VB
VOUT:LO
VIN:HI
VIN
CL
0
0
VDD
VOUT
Would like to have current source that is itself switchable,
i.e., it shuts off when input is high ⇒ CMOS!
Lecture 13-16
6.012 - Microelectronic Devices and Circuits - Fall 2005
3. Complementary MOS (CMOS) Inverter
Circuit schematic:
VDD
VIN
VOUT
CL
Basic operation:
•VIN = 0 ⇒ VOU T = VDD
VGSn = 0 < VT n ⇒ NMOS OFF
VSGp = VDD > −VT p ⇒ PMOS ON
•VIN = VDD ⇒ VOU T = 0
VGSn = VDD > VT n ⇒ NMOS ON
VSGp = 0 < −VT p ⇒ PMOS OFF
power
anyy logic state.
No p
ower consumption while idling in an
Lecture 13-17
6.012 - Microelectronic Devices and Circuits - Fall 2005
Output characteristics of both transistors:
IDn
-IDp
VGSn
VSGp
VGSn=VTn
VSGp=-VTp
0
0
0
VDSn
0
VSDp
Note:
VIN = VGSn = VDD − VSGp ⇒ VSGp = VDD − VIN
VOU T = VDSn = VDD − VSDp ⇒ VSDp = VDD − VOU T
IDn = −IDp
Combine into single diagram of ID vs. VOU T with VIN as
parameter.
Lecture 13-18
6.012 - Microelectronic Devices and Circuits - Fall 2005
VDD
ID
VIN
VOUT
VDD-VIN
VIN
CL
0
0
VOUT
no current while idling in any logic state.
Transfer function:
NMOS cutoff
PMOS triode
VOUT
NMOS saturation
PMOS triode
VDD
NMOS saturation
PMOS saturation
NMOS triode
PMOS saturation
NMOS triode
PMOS cutoff
0
0
VTn
VDD+VTp VDD VIN
”r
”rail-to-rail”
ail-to-rail” lo
logic:
gic: lo
logic
gic levels are 0 and VDD
ound logic
logic thresholdd ⇒ go
od noise margins
highh |A
|Av | ar
around
good
6.012 - Microelectronic Devices and Circuits - Fall 2005
Lecture 13-19
Transfer characteristics of CMOS inverter in WebLab:
6.012 - Microelectronic Devices and Circuits - Fall 2005
Lecture 13-20
Key conclusions
• In NMOS inverter with resistor pull-up: trade-off between noise margin and speed.
• Trade-off resolved using current-source pull-up: use
PMOS as current source.
• In NMOS inverter with current-source pull-up: if VIN =
HI, power consumption even if inverter is idling.
• Complementary MOS: NMOS and PMOS switch alternatively ⇒
– no power consumption while idling
– ”rail-to-rail” logic: logic levels are 0 and VDD
– high |Av | around logic threshold ⇒ good noise
margins