Lecture 19 Transistor Amplifiers (I)

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Lecture 19
Transistor Amplifiers (I)
Common­Source Amplifier
Outline
• Amplifier fundamentals
• Common-source amplifier
• Common-source amplifier with current-source
supply
Reading Assignment:
Howe and Sodini; Chapter 8, Sections 8.1-8.4
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Lecture 19
1
Amplifier Fundamentals
• Source resistance RS is associated only with small
signal sources
• Choose ID = ISUP
• DC output current
– IOUT = 0
– VOUT = 0
Input�
sources
Intrinsic�
Amplifier
V+
Load
Voltage Input
Supply�
Current �
ISUP
RS
vs
+
−
VBIAS
+
−
vIN = VBIAS + vs
Current Input
is
iOUT = id
ISUP
RS
iIN = IBIAS + is
iD
Input
Active �
Device�
iD = f(input)
+
vOUT
RL
−
IBIAS
V−
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Lecture 19
2
2. Common­Source Amplifier:
Consider the following circuit:
V+=VDD
RD
iR
signal source
RS
iD
+
vOUT
vs
VBIAS
signal
load
RL
V­=VSS
• Consider intrinsic voltage amplifier - no loading
•RS = 0
•RL ---> ∞
• VGS = VBIAS - VSS
• VBIAS, RD and W/L of MOSFET selected to bias
transistor in saturation and obtain desired output
bias point (i.e. VOUT = 0).
Watch notation: vOUT(t)=VOUT+vout(t)
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Lecture 19
3
Load line view of amplifier:
load line
IR=ID
VDD-VSS
VVGG
-VSS
-VDD
­ V=V
=V
SS­ VSS
BIAS
ss DD
RD
VV
-V ­ Vss
GG
BIAS SS
­ V=V
VVGG
-VSS
BIAS
ssT= VT
0
VSS
VDD
VOUT
Transfer characteristics of amplifier:
VOUT
VDD
­
VSS
0
VT
VDD-VSS VGG-VSS
V
­
BIAS
Want:
• Bias point calculation;
• Limits to signal swing
• Small-signal gain;
• Frequency response [in a few days]
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Lecture 19
Vss
4
Bias point: choice of VBIAS, W/L, and RD to keep
transistor in saturation and to get proper quiescent VOUT.
Assume MOSFET is in saturation:
ID =
W
2
µ nCox (VBIAS − VSS − VT )
2L
VDD − VOUT
IR =
RD
If we select VOUT=0:
ID = IR =
W
V
2
µ n C ox (VBIAS − VSS − VT ) = DD
2L
RD
Then:
VBIAS =
2I D
+ VSS + VT
W
µn Cox
L
Equation that allows us to compute needed VBIAS given
RD and W/L.
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Lecture 19
5
VDD
Signal swing:
RD
signal source
+
RS
vOUT
vs
VBIAS
-
VSS
• Upswing: limited by MOSFET going into cut-off.
vout,max = VDD
• Downswing: limited by MOSFET leaving saturation.
VDS ,sat = VGS − VT =
or
2I D
W
µn C ox
L
vout ,min − VSS = VBIAS − VSS − VT
Then:
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vout,min = VBIAS − VT
Lecture 19
6
Generic view of the effect of loading on
small­signal operation
Two-port network view of small-signal equivalent
circuit model of a voltage amplifier:
Rin is input resistance
Rout is output resistance
Avo is unloaded voltage gain
Rs
Rout
+
+
vs
+
vin
-
-
input­
loading
+
Rin
-
Avovin
RL
vout
-
unloaded circuit
output­
loading
Voltage divider at input:
vs
vin = Rin
Rin + Rs
Voltage divider at output:
Avo v in
vout = RL
Rout + RL
vout
Rin
RL
Loaded voltage gain: v = R + R Avo R + R
s
in
S
L
out
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Small­signal voltage gain Avo: draw small-signal
equivalent circuit model: Remove RL and RS
RD
+
+
vt
vgs
-
D
G
+
gmvgs
ro
vout
-
- S
+
vt
+
gmvt
(ro//RD) vout
-
-
vout = −g mv t (ro // RD )
Then unloaded voltage gain:
v out
Avo =
= −gm (ro // R D )
vt
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Input Resistance
• Calculation of input resistance, Rin:
– Load amplifier with RL
– Apply test voltage (or current) at input, measure test
current (or voltage).
For common-source amplifier:
it
+
vt
+
-
vgs
gmvgs
(ro//RD)
RL
-
vt
it = 0 ⇒ Rin = = ∞
it
No effect of loading at input.
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Output Resistance
• Calculation of output resistance, Rout:
– Load amplifier with RS
– Apply test voltage (or current) at output, measure test
current (or voltage).
– Set input source equal zero
For common-source amplifier:
it
+
RS
vgs
+
gmvgs
(ro//RD)
-
-
vt
v gs = 0 ⇒ gm v gs = 0 ⇒ v t = it (ro // RD )
vt
Rout =
= ro // RD
it
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Two­port network view of common­source amplifier
Voltage Amplifier
Rs
Rout
+
+
vs
+
vin
-
-
input
loading
+
Rin
-
Avovin
RL
vout
-
Intrinsic circuit
output
loading
v out
Rin
RL
=
Avo
vs
Rin + RS
RL + Rout
vout
RL
= −g m(ro // RD )
= −gm (ro // RD // RL )
vs
RL + ro // RD
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Current Source Supply I—V characteristics of current source:
iSUP
+
vSUP
1
roc
ISUP
iSUP
_
vSUP
Equivalent circuit models :
iSUP
+
vSUP
ISUP
roc
roc
_
large-signal model
small-signal model
• iSUP = 0 for vSUP ≤ 0
• iSUP = ISUP + vSUP/ roc for vSUP > 0
• High small-signal resistance roc.
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3. Common­source amplifier with current­
source supply V
DD
iSUP
signal source
iD
RS
+
vOUT
vs
VBIAS
signal
load
RL
-
VSS
Loadline View
iSUP=ID
load line
VBIAS-VSS=VDD-VSS
ISUP
VBIAS-VSS
VBIAS-VSS=VT
0
VSS
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VDD
VOUT
Lecture 19
13
Use PMOS for current source supply
VDD
VB
iSUP
signal source
iD
RS
vOUT
vs
VBIAS
VSS
Bias point: Assume both transistors in saturation
saturation
VOUT = 0. Choose ISUP and determine VB.
W
2
I SUP = −I Dp =   µ p Cox VDD − VB + VTp
 2L p
(
)
Set -IDp = IDn for VOUT ~ 0
W
2
I SUP = I Dn =   µ nCox (VBIAS − VSS − VTn )
 2L  n
VBIAS =
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2 I SUP
+ VSS + VTn
W 
  µ n C ox
L n
Lecture 19
14
VDD
Signal swing:
VB
iSUP
signal source
iD
RS
vOUT
vs
VBIAS
VSS
• Upswing: limited by PMOS leaving saturation.
VSD, sat = VSG + VTp = VDD − VB + VTp
VDD − vout,max = VDD − VB + VTp
vout,max = VB − VTp
• Downswing: limited by NMOS leaving saturation.
• Same result as with resistive supply current.
vout ,min = VBIAS − VT
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3. Common­source amplifier with current­
source supply (contd.)
Current source characterized by high output resistance:
roc. Significantly higher than amplifier with resistive supply.
p-channel MOSFET: roc = 1/λIDp
VDD
VB
iSUP
signal source
iD
RS
vOUT
vs
VBIAS
VSS
• Voltage gain: Avo = -gm (ro//roc).
• Input resistance :Rin = ∞
• Output resistance: Rout = ro//roc.
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Relationship between circuit figures of merit and
device parameters
Remember:
W
µ nCox
L
1
L
ro ≈
∝
λn I D I D
gm = 2I D
Then:
Circuit Parameters
|Avo|
Device*
Parameters gm(ro//roc)
↓
ISUP ↑
Rinin Rout
out
∝
ro//roc
-
↓
W↑
↑
-
-
L↑
↑
-
↑
* adjustments are made to VBIAS so that none of
the other parameters change
CS amplifier with current source supply is a good
voltage amplifier (Rin high and |Avo| high), but Rout high
too ⇒ voltage gain degraded if RL << ro//roc.
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What did we learn today?
Summary of Key Concepts
for CS amplifier
• Bias Calculations
• Signal Swing
• Small Signal Circuit Parameters
– Voltage Gain - AVO
– Input Resistance - Rin
– Output Resistance - Rout
• Relationship between small signal circuit and
device parameters
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Lecture 19
18
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6.012 Microelectronic Devices and Circuits
Spring 2009
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