Low Capacitance, Triple/Quad SPDT ±15 V/+12 V iCMOS Switches ADG1233/ADG1234 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAMS 1.5 pF off capacitance 0.5 pC charge injection 33 V supply range 120 Ω on resistance Fully specified at ±15 V/+12 V 3 V logic-compatible inputs Rail-to-rail operation Break-before-make switching action 16-lead TSSOP, 20-lead TSSOP, and 4 mm × 4 mm LFCSP Typical power consumption (<0.03 μW) ADG1233 S1A D1 S3B S1B D3 S3A S2B D2 S2A APPLICATIONS IN1 IN2 IN3 EN SWITCHES SHOWN FOR A LOGIC 1 INPUT Audio and video routing Automatic test equipment Data acquisition systems Battery-powered systems Sample-and-hold systems Communication systems 05743-001 LOGIC Figure 1. ADG1234 S1A S4A D1 D4 S1B S4B S2B S3B D2 D3 S2A S3A IN1 IN2 IN3 IN4 EN SWITCHES SHOWN FOR A LOGIC 1 INPUT 05743-038 LOGIC Figure 2. GENERAL DESCRIPTION The ADG1233 and ADG1234 are monolithic iCMOS® analog switches comprising three independently selectable single-pole, double throw SPDT switches and four independently selectable SPDT switches, respectively. Unlike analog ICs using conventional CMOS processes, iCMOS components can tolerate high supply voltages while providing increased performance, dramatically lowered power consumption, and reduced package size. All channels exhibit break-before-make switching action preventing momentary shorting when switching channels. An EN input on the ADG1233 and ADG1234 enables or disables the device. When disabled, all channels are switched off. The ultralow capacitance and charge injection of these multiplexers make them ideal solutions for data acquisition and sample-andhold applications, where low glitch and fast settling are required. The iCMOS (industrial-CMOS) modular manufacturing process combines a high voltage complementary metal-oxide semiconductor (CMOS) and bipolar technologies. It enables the development of a wide range of high performance analog ICs capable of 33 V operation in a footprint that no other generation of high voltage devices has been able to achieve. Rev. C Fast switching speed coupled with high signal bandwidth make the devices suitable for video signal switching. iCMOS construction ensures ultralow power dissipation, making the devices ideally suited for portable and battery-powered instruments. PRODUCT HIGHLIGHTS 1. 2. 3. 4. 1.5 pF off capacitance (±15 V supply). 0.5 pC charge injection. 3 V logic-compatible digital input, VIH = 2.0 V, VIL = 0.8 V. 16-lead TSSOP, 20-lead TSSOP, and 4 mm × 4 mm LFCSP. Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2006–2016 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com ADG1233/ADG1234 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Absolute Maximum Ratings ............................................................7 Applications ....................................................................................... 1 ESD Caution...................................................................................7 General Description ......................................................................... 1 Pin Configurations and Function Descriptions ............................8 Functional Block Diagrams ............................................................. 1 Terminology .................................................................................... 10 Product Highlights ........................................................................... 1 Typical Performance Characteristics ........................................... 11 Revision History ............................................................................... 2 Test Circuits..................................................................................... 14 Specifications..................................................................................... 3 Outline Dimensions ....................................................................... 16 Dual Supply ................................................................................... 3 Ordering Guide .......................................................................... 17 Single Supply ................................................................................. 5 REVISION HISTORY 3/16—Rev. B to Rev. C Changes to Figure 5 and Figure 6 ................................................... 9 Updated Outline Dimensions ....................................................... 17 Changes to Ordering Guide .......................................................... 17 2/09—Rev. A to Rev. B Change to IDD Parameter, Table 1 ................................................... 4 Change to IDD Parameter, Table 2 ................................................... 6 Updated Outline Dimensions ....................................................... 16 8/06—Rev. 0 to Rev. A Updated Format ................................................................ 1Universal Changes to Table 1.......................................................................... 13 Changes to Table 2.......................................................................... 14 Changes to Figure 11.................................................................... 110 Changes to Figure 12.................................................................... 111 1/06—Revision 0: Initial Version Rev. C | Page 2 of 17 Data Sheet ADG1233/ADG1234 SPECIFICATIONS DUAL SUPPLY VDD = +15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted. Table 1. Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match Between Channels (∆RON) On Resistance Flatness (RFLAT (ON)) LEAKAGE CURRENTS Source Off Leakage IS (Off ) Drain Off Leakage ID (Off ) Channel On Leakage ID, IS (On) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH Digital Input Capacitance, CIN DYNAMIC CHARACTERISTICS 2 tTRANSITION tBBM +25°C Y Version 1 −40°C to +85°C −40°C to +125°C VSS to VDD 120 190 3.5 6 20 60 ±0.02 ±0.1 ±0.02 ±0.1 ±0.02 ±0.2 230 260 10 12 72 79 ±0.6 ±1 V Ω typ Ω max Ω typ VS = ±10 V, IS = −1 mA; see Figure 24 VDD = +13.5 V, VSS = −13.5 V VS = ±10 V, IS = −1 mA Ω max Ω typ Ω max nA typ nA max nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 25 ±0.6 ±1 2.0 0.8 V min V max µA typ µA max pF typ VIN = VINL or VINH ±0.1 ns typ ns max ns typ ns min ns typ ns max ns typ ns max pC typ RL = 300 Ω, CL = 35 pF VS = 10 V; see Figure 27 RL = 300 Ω, CL = 35 pF VS1 = VS2 = +10 V; see Figure 28 RL = 300 Ω, CL = 35 pF VS = 10 V; see Figure 29 RL = 300 Ω, CL = 35 pF VS = 10 V; see Figure 29 VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 30 RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 31 RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 33 RL = 10 kΩ, 5 V rms, f = 20 Hz to 20 kHz; see Figure 34 RL = 50 Ω, CL = 5 pF; see Figure 32 f = 1 MHz; VS = 0 V f = 1 MHz; VS = 0 V f = 1 MHz; VS = 0 V f = 1 MHz; VS = 0 V 3 150 170 Charge Injection Off Isolation −80 dB typ Channel-to-Channel Crosstalk −85 dB typ Total Harmonic Distortion, THD + N 0.14 % typ −3 dB Bandwidth CS (Off ) 900 1.5 1.7 1.6 1.8 MHz typ pF typ pF max pF typ pF max CD (Off ) VDD = +16.5 V, VSS = −16.5 V VD = ±10 V, VS = −10 V; see Figure 25 nA max nA typ nA max 120 140 40 45 0.5 tOFF (EN) VS = −5 V, 0 V, +5 V; IS = −1 mA ±1 10 tON (EN) Test Conditions/Comments ±0.6 ±0.005 110 130 25 Unit 170 195 55 60 Rev. C | Page 3 of 17 VS = VD = ±10 V; see Figure 26 ADG1233/ADG1234 Parameter CD, CS (On) POWER REQUIREMENTS IDD Data Sheet +25°C 3.5 4 Y Version 1 −40°C to +85°C −40°C to +125°C 0.002 1.0 IDD 260 475 ISS 0.002 1.0 ISS 0.002 VDD/VSS 1 2 1.0 ±5/±16.5 Temperature range for the Y version: −40°C to +125°C. Guaranteed by design, not subject to production test. Rev. C | Page 4 of 17 Unit pF typ pF max µA typ µA max µA typ µA max µA typ µA max µA typ µA max V min/max Test Conditions/Comments f = 1 MHz; VS = 0 V f = 1 MHz; VS = 0 V VDD = +16.5 V, VSS = −16.5 V Digital inputs = 0 V or VDD Digital inputs = 5 V Digital inputs = 0 V or VDD Digital inputs = 5 V GND = 0 V Data Sheet ADG1233/ADG1234 SINGLE SUPPLY VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted. Table 2. Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match Between Channels (∆RON) On Resistance Flatness (RFLAT (ON)) LEAKAGE CURRENTS Source Off Leakage IS (Off ) Drain Off Leakage ID (Off ) Channel On Leakage ID, IS (On) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IINH +25°C Y Version 1 −40°C to +85°C −40°C to +125°C 0 to VDD 300 tBBM 567 625 Ω max Ω typ 16 60 26 27 Ω max Ω typ ±0.02 nA typ ±0.1 ±0.02 ±0.6 ±1 ±0.1 ±0.02 ±0.2 ±0.6 ±1 ±0.6 ±1 2.0 0.8 ±0.001 2 135 170 45 nA max nA typ nA max nA typ nA max V min V max µA typ µA max pF typ ns typ 200 230 10 tON (EN) V Ω typ 475 5 ±0.1 Digital Input Capacitance, CIN DYNAMIC CHARACTERISTICS 2 tTRANSITION Unit ns typ ns min ns typ Charge Injection 150 195 45 60 −0.3 Off Isolation −80 dB typ Channel-to-Channel Crosstalk −85 dB typ −3 dB Bandwidth CS (Off ) 600 1.5 1.7 2 2.2 4 4.5 MHz typ pF typ pF max pF typ pF max pF typ pF max tOFF (EN) CD (Off ) CD, CS (On) 230 265 70 75 ns typ pC typ Rev. C | Page 5 of 17 Test Conditions/Comments VS = 0 V to 10 V, IS = −1 mA; see Figure 24 VDD = 10.8 V, VSS = 0 V VS = 0 V to 10 V, IS = −1 mA VS = 3 V, 6 V, 9 V, IS = −1 mA VDD = 13.2 V VS = 1 V/10 V, VD = 10 V/1 V; see Figure 25 VS = 1 V/10 V, VD = 10 V/1 V; see Figure 25 VS = VD = 1 V or 10 V, see Figure 26 VIN = VINL or VINH RL = 300 Ω, CL = 35 pF VS = 8 V; see Figure 27 RL = 300 Ω, CL = 35 pF VS1 = VS2 = 8 V; see Figure 28 RL = 300 Ω, CL = 35 pF VS = 8 V; see Figure 29 RL = 300 Ω, CL = 35 pF VS = 8 V; see Figure 29 VS = 6 V, RS = 0 Ω, CL = 1 nF; see Figure 30 RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 31 RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 33 RL = 50 Ω, CL = 5 pF; see Figure 32 f = 1 MHz; VS = 6 V f = 1 MHz; VS = 6 V f = 1 MHz; VS = 6 V f = 1 MHz; VS = 6 V f = 1 MHz; VS = 6 V f = 1 MHz; VS = 6 V ADG1233/ADG1234 Parameter POWER REQUIREMENTS IDD Data Sheet +25°C Y Version 1 −40°C to +85°C −40°C to +125°C 0.002 1.0 IDD 260 VDD 1 2 475 5/16.5 Temperature range for the Y version: −40°C to +125°C Guaranteed by design, not subject to production test. Rev. C | Page 6 of 17 Unit µA typ µA max µA typ µA max V min/max Test Conditions/Comments VDD = 13.2 V Digital inputs = 0 V or VDD Digital inputs = 5 V VSS = 0 V, GND = 0 V Data Sheet ADG1233/ADG1234 ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted. Table 3. Parameter VDD to VSS VDD to GND VSS to GND Analog, Digital Inputs1 Continuous Current, S or D Peak Current, S or D (Pulsed at 1 ms, 10% Duty Cycle Maximum) Operating Temperature Range Automotive Temperature Range (Y Version) Storage Temperature Range Junction Temperature TSSOP, θJA, Thermal Impedance LFCSP, θJA, Thermal Impedance Reflow Soldering Peak Temperature, Pb-Fee 1 Rating 35 V −0.3 V to +25 V +0.3 V to −25 V VSS − 0.3 V to VDD + 0.3 V or 30 mA, whichever occurs first 24 mA 100 mA Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. Only one absolute maximum rating is applied at any one time. ESD CAUTION −40°C to +125°C −65°C to +150°C 150°C 112°C/W 30.4°C/W 260°C Overvoltages at A, EN, S, or D are clamped by internal diodes. Current must be limited to the maximum ratings given. Rev. C | Page 7 of 17 ADG1233/ADG1234 Data Sheet VDD 1 16 GND S1A 2 15 IN1 D1 3 ADG1233 14 EN S1B 4 TOP VIEW (Not to Scale) 13 VSS S1B 4 S2B 5 12 S3B VSS 5 D2 6 11 D3 GND 6 S2A 7 10 S3A S2B IN2 8 9 IN3 IN1 1 20 IN4 2 19 S4A D1 3 18 D4 17 S4B 16 VDD 15 EN 7 14 S3B D2 8 13 D3 S2A 9 12 S3A IN2 10 11 IN3 05743-002 S1A ADG1234 TOP VIEW (Not to Scale) Figure 4. 20-Lead TSSOP Pin Configuration Figure 3. 16-Lead TSSOP Pin Configuration Table 4. 16-Lead TSSOP/20-Lead TSSOP Pin Configurations Pin No. ADG1233 16-Lead TSSOP 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Not applicable Not applicable Not applicable Not applicable 05743-003 PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS Pin No. ADG1234 20-Lead TSSOP 16 2 3 4 7 8 9 10 11 12 13 14 5 15 1 6 17 18 19 20 Rev. C | Page 8 of 17 Mnemonic VDD S1A D1 S1B S2B D2 S2A IN2 IN3 S3A D3 S3B VSS EN IN1 GND S4B D4 S4A IN4 ADG1233 11 VSS S2B 3 TOP VIEW (Not to Scale) 10 S3B TOP VIEW (Not to Scale) 15 14 13 12 11 D4 S4B VDD S3B D3 D2 S2A IN2 IN3 S3A NOTES 1. NC = NO CONNECT. DO NOT CONNECT TO THIS PIN. 2. THE EXPOSED PAD MUST BE TIED TO SUBSTRATE, VSS. NOTES 1. THE EXPOSED PAD MUST BE TIED TO SUBSTRATE, VSS. 05743-004 IN3 7 S3A 8 IN2 6 S2A 5 D3 ADG1234 6 7 8 9 10 9 D2 4 S4A S1A IN1 EN IN4 D1 1 S1B 2 VSS 3 GND 4 S2B 5 12 EN S1B 2 Figure 6. 20-Lead, 4 mm × 4 mm LFCSP Pin Configuration, Exposed Pad Tied to Substrate, VSS Figure 5. 16-Lead, 4 mm × 4 mm LFCSP Pin Configuration, Exposed Pad Tied to Substrate, VSS Table 5. 16-Lead LFCSP/20-Lead LFCSP Pin Configurations Pin No. ADG1233 16-Lead LFCSP 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Not applicable Not applicable Not applicable Not applicable Pin No. ADG1234 20-Lead LFCSP 1 2 5 6 7 8 9 10 11 12 3 18 19 4 13 20 14 15 16 17 Mnemonic D1 S1B S2B D2 S2A IN2 IN3 S3A D3 S3B VSS EN IN1 GND VDD S1A S4B D4 S4A IN4 Table 6. ADG1233/ADG1234 Truth Table EN 1 0 0 INx X 0 1 05743-005 D1 1 20 19 18 17 16 13 IN1 14 GND 16 S1A ADG1233/ADG1234 15 VDD Data Sheet Switch xA Off Off On Switch xB Off On Off Rev. C | Page 9 of 17 ADG1233/ADG1234 Data Sheet TERMINOLOGY VDD Most positive supply potential. tOFF (EN) Delay time between the 50% and 90% points of the digital input and switch off condition. VSS Most negative power supply potential in dual supplies. In single-supply applications, it can be connected to ground. tTRANSITION Delay time between the 50% and 90% points of the digital inputs and the switch on condition when switching from one address state to another. GND Ground (0 V) reference. tBBM RON Ohmic resistance between D and S. Off time measured between the 80% point of both switches when switching from one address state to another. ΔRON Difference between the RON of any two channels. VINL Maximum input voltage for Logic 0. IS (Off) Source leakage current when switch is off. VINH Minimum input voltage for Logic 1. ID (Off) Drain leakage current when switch is off. IINL, IINH Input current of the digital input. ID, IS (On) Channel leakage current when switch is on. IDD Positive supply current. VD, VS Analog voltage on Terminal D, Terminal S. ISS Negative supply current. CS (Off) Channel input capacitance for off condition. Off Isolation A measure of an unwanted signal coupling through an off channel. CD (Off) Channel output capacitance for off condition. Charge Injection A measure of the glitch impulse transferred from the digital input to the analog output during switching. CD, CS (On) On switch capacitance. Bandwidth Frequency at which the output is attenuated by 3 dB. CIN Digital input capacitance. tON (EN) Delay time between the 50% and 90% points of the digital input and switch on condition. On Response Frequency response of the on switch. THD + N Ratio of the harmonic amplitude plus noise of the signal to the fundamental. Rev. C | Page 10 of 17 Data Sheet ADG1233/ADG1234 TYPICAL PERFORMANCE CHARACTERISTICS 200 250 TA = 25°C 180 VDD = +13.5V VSS = –13.5V 160 200 TA = +125°C 140 ON RESISTANCE (Ω) 120 VDD = +16.5V VSS = –16.5V 100 80 60 100 TA = –40°C 0 –18 –15 –12 –9 –6 –3 0 3 6 9 SOURCE OR DRAIN VOLTAGE (V) 12 15 0 –15 18 Figure 7. On Resistance as a Function of VD (VS) for Dual Supply 05743-034 05743-031 20 –10 –5 0 5 TEMPERATURE (°C) 10 15 Figure 10. On Resistance as a Function of VD (VS ) for Different Temperatures, Dual Supply 600 600 TA = 25°C VDD = 4.5V VSS = –4.5V TA = +125°C 500 VDD = 12V VSS = 0V 500 ON RESISTANCE (Ω) VDD = 5V VSS = –5V 400 VDD = 5.5V VSS = –5.5V 300 200 100 TA = +85°C 400 TA = +25°C 300 TA = –40°C 200 0 –6 05743-032 100 –4 –2 0 2 SOURCE OR DRAIN VOLTAGE (V) 4 05743-035 ON RESISTANCE (W ) TA = +25°C 50 40 0 0 6 2 4 6 8 TEMPERATURE (°C) 10 12 Figure 11. On Resistance as a Function of VD (VS ) for Different Temperatures, Single Supply Figure 8. On Resistance as a Function of VD (VS ) for Dual Supply 250 450 TA = 25°C 400 VDD = 10.8V VSS = 0V 350 150 VDD = 12V VSS = 0V 300 250 VDD = 13.2V VSS = 0V 200 VDD = +15V VSS = –15V VBIAS = +10V/–10V 200 LEAKAGE CURRENT (pA) ON RESISTANCE (Ω) TA = +85°C 150 150 100 100 50 0 –50 IS (OFF) + – ID (OFF) + – IS (OFF) – + ID (OFF) – + ID, IS (ON) – – ID, IS (ON) + + –100 05743-033 –150 50 0 0 2 4 6 8 10 SOURCE OR DRAIN VOLTAGE (V) 12 –200 –250 0 14 Figure 9. On Resistance as a Function of VD (VS ) for Single Supply 05743-017 ON RESISTANCE (Ω) VDD = +15V VSS = –15V VDD = +15V VSS = –15V 20 40 60 80 TEMPERATURE (°C) 100 120 Figure 12. Leakage Currents as a Function of Temperature, Dual Supply Rev. C | Page 11 of 17 ADG1233/ADG1234 Data Sheet 130 220 VDD = 12V VSS = 0V VBIAS = 1V/10V 180 160 TIME (ns) 30 –20 120 100 80 IS (OFF) + – ID (OFF) + – IS (OFF) – + ID (OFF) – + ID, IS (ON) – – ID, IS (ON) + + 20 BOFF AON 12V DS 40 –120 0 BOFF AON 15V DS 60 40 60 80 TEMPERATURE (°C) 100 05743-011 –70 20 0 –40 120 –20 0 20 40 60 TEMPERATURE (°C) 80 100 0 200 IDD PER CHANNEL TA = 25°C 180 –10 –20 160 OFF ISOLATION (dB) VDD = +15V VSS = –15V 140 120 100 80 60 VDD = +15V VSS = –15V TA = 25°C –30 –40 –50 –60 –70 –80 40 0 0 2 4 6 8 10 LOGIC, INX (V) 12 14 05743-036 05743-006 –90 VDD = 12V VSS = 0V 20 –100 –110 10k 16 100k 1M 10M FREQUENCY (Hz) 100M 1G Figure 17. Off Isolation vs. Frequency Figure 14. IDD vs. Logic Level –10 6 TA = 25°C VDD = +15V VSS = –15V VDD = +15V VSS = –15V TA = 25°C –20 4 –30 2 0 CROSSTALK (dB) VDD = +5V VSS = –5V VDD = 12V VSS = 0V –2 –40 SxA – SxB –50 –60 –70 S1x – S2x –80 –6 –15 –10 –5 0 VS (V) 5 10 05743-012 –4 05743-008 CHARGE INJECTION (pC) 120 Figure 16. tTRANSITION vs. Temperature Figure 13. Leakage Currents as a Function of Temperature, Single Supply IDD (µA) AOFF BON 15V DS 140 05743-018 LEAKAGE CURRENT (pA) 80 AOFF BON 12V DS 200 –90 –100 10k 15 100k 1M 10M FREQUENCY (Hz) Figure 18. Crosstalk vs. Frequency Figure 15. Charge Injection vs. Source Voltage Rev. C | Page 12 of 17 100M 1G Data Sheet ADG1233/ADG1234 5.0 0 VDD = +15V VSS = –15V TA = 25°C 4.0 CAPACITANCE (pF) –5 ON RESPONSE (dB) VDD = 12V VSS = 0V TA = 25°C 4.5 –10 –15 SOURCE/DRAIN ON 3.5 3.0 2.5 DRAIN OFF 2.0 1.5 SOURCE OFF 05743-013 –25 10k 100k 1M 10M 100M FREQUENCY (Hz) 1G 05743-009 1.0 –20 0.5 0 0 10G Figure 19. On Response vs. Frequency 2 4 8 10 12 Figure 22. Capacitance vs. Source Voltage for Single Supply 10 5.0 LOAD = 10kΩ TA = 25°C VDD = +5V VSS = –5V TA = 25°C 4.5 SOURCE/DRAIN ON CAPACITANCE (pF) 4.0 1 THD + N (%) 6 VBIAS (V) VDD = +5V, VSS = –5V, VS = +3.5V rms VDD = +15V, VSS = –15V, VS = +5V rms 0.10 3.5 3.0 2.5 DRAIN OFF 2.0 SOURCE OFF 1.5 0.01 10 100 1k FREQUENCY (Hz) 10k 0.5 100k Figure 20. THD + N vs. Frequency VDD = +15V VSS = –15V TA = 25°C SOURCE/DRAIN ON 3.0 2.5 DRAIN OFF 2.0 1.5 SOURCE OFF 1.0 05743-010 CAPACITANCE (pF) 4.0 3.5 0.5 0 –15 –10 –5 0 VBIAS (V) 5 0 –5 –4 –3 –2 –1 0 1 VBIAS (V) 2 3 4 Figure 23. Capacitance vs. Source Voltage for Dual Supply 5.0 4.5 05743-007 05743-037 1.0 10 15 Figure 21. Capacitance vs. Source Voltage for Dual Supply Rev. C | Page 13 of 17 5 ADG1233/ADG1234 Data Sheet TEST CIRCUITS V S D IDS 05743-020 VS Figure 24. On Resistance A S D ID (OFF) A VS 05743-021 IS (OFF) VD Figure 25. Off Leakage ID (ON) D NC = NO CONNECT A VD 05743-022 S NC Figure 26. On Leakage VDD VDD VS 0.1µF 50% 50% VIN 50% 50% VSS SxB D SxA VOUT RL 300Ω INx VIN VIN CL 35pF 90% VOUT GND tON 90% tOFF 05743-023 0.1µF VSS Figure 27. Switching Timing VS VDD VSS VDD VSS SxB VIN D SxA VOUT RL 300Ω INx VIN 0.1µF CL 35pF VOUT 80% tBBM GND tBBM 05743-024 0.1µF Figure 28. Break-Before-Make Delay Rev. C | Page 14 of 17 Data Sheet ADG1233/ADG1234 0.1µF VDD VSS VDD VSS 0.1µF 3V VS S1A EN tOFF (EN) VO D1 50Ω 50% 0V S1B ADG1233 VIN 50% CL 35pF RL 300Ω GND VO 0.9VO 0.9VO OUTPUT 0V 05743-025 IN3 IN2 IN1 ENABLE DRIVE (VIN) tON (EN) Figure 29. Enable Delay, tON (EN), tOFF (EN) VSS VDD VSS 0.1µF VIN (NORMALLY CLOSED SWITCH) ON SxB NC D VS VOUT SxA CL 1nF INx VIN OFF VIN (NORMALLY OPEN SWITCH) VOUT GND ∆VOUT QINJ = CL × ∆VOUT 05743-026 0.1µF VDD Figure 30. Charge Injection VDD VDD 0.1µF VSS VDD VSS NETWORK ANALYZER NC SxA INx SxB VSS 0.1µF 0.1µF 0.1µF NETWORK ANALYZER 50Ω VOUT VDD VSS SxA RL 50Ω 50Ω VS SxB D D VIN RL 50Ω GND VOUT INx VS VOUT VS CHANNEL-TO-CHANNEL CROSSTALK = 20 log Figure 31. Off Isolation 0.1µF VDD VSS NC INx SxA VSS 0.1µF 0.1µF NETWORK ANALYZER 50Ω VDD AUDIO PRECISION VSS RS SxB VS S INx D VIN RL 50Ω GND VOUT VIN INSERTION LOSS = 20 log VOUT WITHOUT SWITCH RL 10Ω 05743-028 GND VOUT WITH SWITCH VS V p-p D Figure 34. THD + Noise Figure 32. Bandwidth Rev. C | Page 15 of 17 VOUT 05743-030 VDD VOUT VS Figure 33. Channel-to-Channel Crosstalk VSS 0.1µF 05743-029 05743-027 GND OFF ISOLATION = 20 log VDD R 50Ω ADG1233/ADG1234 Data Sheet OUTLINE DIMENSIONS 5.10 5.00 4.90 16 9 4.50 4.40 4.30 6.40 BSC 8 1 PIN 1 1.20 MAX 0.15 0.05 0.20 0.09 0.30 0.19 0.65 BSC COPLANARITY 0.10 0.75 0.60 0.45 8° 0° SEATING PLANE COMPLIANT TO JEDEC STANDARDS MO-153-AB Figure 35. 16-Lead Thin Shrink Small Outline Package [TSSOP] (RU-16) Dimensions shown in millimeters 6.60 6.50 6.40 20 11 4.50 4.40 4.30 6.40 BSC 10 1 PIN 1 0.65 BSC 1.20 MAX 0.15 0.05 COPLANARITY 0.10 0.30 0.19 0.20 0.09 SEATING PLANE 8° 0° COMPLIANT TO JEDEC STANDARDS MO-153-AC Figure 36. 20-Lead Thin Shrink Small Outline Package [TSSOP] (RU-20) Dimensions shown in millimeters Rev. C | Page 16 of 17 0.75 0.60 0.45 Data Sheet ADG1233/ADG1234 PIN 1 INDICATOR 4.10 4.00 SQ 3.90 0.35 0.30 0.25 0.65 BSC PIN 1 INDICATOR 16 13 1 12 EXPOSED PAD 2.25 2.10 SQ 1.95 9 0.80 0.75 0.70 0.05 MAX 0.02 NOM COPLANARITY 0.08 0.20 REF SEATING PLANE 0.25 MIN BOTTOM VIEW FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONS SECTION OF THIS DATA SHEET. 111908-A TOP VIEW 4 5 8 0.70 0.60 0.50 COMPLIANT TO JEDEC STANDARDS MO-220-WGGC. Figure 37. 16-Lead Lead Frame Chip Scale Package [LFCSP] 4 mm × 4 mm Body and 0.75 mm Package Height (CP-16-23) Dimensions shown in millimeters 0.30 0.25 0.18 0.50 BSC PIN 1 INDICATOR 20 16 15 1 EXPOSED PAD 2.30 2.10 SQ 2.00 11 TOP VIEW 0.80 0.75 0.70 0.65 0.60 0.55 5 10 0.20 MIN BOTTOM VIEW 0.05 MAX 0.02 NOM COPLANARITY 0.08 0.20 REF SEATING PLANE 6 FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONS SECTION OF THIS DATA SHEET. COMPLIANT TO JEDEC STANDARDS MO-220-WGGD-1. 08-16-2010-B PIN 1 INDICATOR 4.10 4.00 SQ 3.90 Figure 38. 20-Lead Lead Frame Chip Scale Package [LFCSP] 4 mm × 4 mm Body and 0.75 mm Package Height (CP-20-6) Dimensions shown in millimeters ORDERING GUIDE Model 1 ADG1233YRUZ ADG1233YRUZ-REEL7 ADG1233YCPZ-REEL7 ADG1234YRUZ ADG1234YRUZ-REEL7 ADG1234YCPZ-REEL ADG1234YCPZ-REEL7 1 Temperature Range −40°C to +125°C −40°C to +125°C −40°C to +125°C −40°C to +125°C −40°C to +125°C −40°C to +125°C −40°C to +125°C Package Description 16-Lead Thin Shrink Small Outline Package [TSSOP] 16-Lead Thin Shrink Small Outline Package [TSSOP] 16-Lead Lead Frame Chip Scale Package [LFCSP] 20-Lead Thin Shrink Small Outline Package [TSSOP] 20-Lead Thin Shrink Small Outline Package [TSSOP] 20-Lead Lead Frame Chip Scale Package [LFCSP] 20-Lead Lead Frame Chip Scale Package [LFCSP] Z = RoHS Compliant Part. ©2006–2016 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D05743-0-3/16(C) Rev. C | Page 17 of 17 Package Option RU-16 RU-16 CP-16-23 RU-20 RU-20 CP-20-6 CP-20-6