Low Capacitance, 16- and 8-Channel i / ADG1206

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Low Capacitance, 16- and 8-Channel
±15 V/+12 V iCMOS Multiplexers
ADG1206/ADG1207
Data Sheet
FEATURES
FUNCTIONAL BLOCK DIAGRAMS
ADG1206
ADG1207
S1
S1A
DA
S8A
D
S1B
DB
S16
S8B
1-OF-16
DECODER
APPLICATIONS
Audio and video routing
Automatic test equipment
Data acquisition systems
Battery-powered systems
Sample-and-hold systems
Communication systems
1-OF-8
DECODER
A0 A1 A2 A3 EN
06119-001
<1 pC charge injection over full signal range
1.5 pF off capacitance
33 V supply range
120 Ω on resistance
Fully specified at ±15 V/+12 V
3 V logic-compatible inputs
Rail-to-rail operation
Break-before-make switching action
28-lead TSSOP and 32-lead, 5 mm × 5 mm LFCSP
A0 A1 A2 EN
Figure 1.
GENERAL DESCRIPTION
The ADG1206 and ADG1207 are monolithic iCMOS® analog
multiplexers comprising sixteen single channels and eight
differential channels, respectively. The ADG1206 switches one
of sixteen inputs to a common output, as determined by the
4-bit binary address lines A0, A1, A2, and A3. The ADG1207
switches one of eight differential inputs to a common differential
output, as determined by the 3-bit binary address lines A0, A1,
and A2. An EN input on both devices is used to enable or disable
the device. When disabled, all channels are switched off. When
on, each channel conducts equally well in both directions and
has an input signal range that extends to the supplies.
The ultralow capacitance and exceptionally low charge injection
of these multiplexers make them ideal solutions for data acquisition
and sample-and-hold applications, where low glitch and fast
settling are required. Figure 2 shows that there is minimum
charge injection over the entire signal range of the device.
iCMOS construction also ensures ultralow power dissipation,
making the devices ideally suited for portable and batterypowered instruments.
1.0
MUX (SOURCE TO DRAIN)
0.9 TA = 25°C
0.7
0.6
VDD = +15V
VSS = –15V
0.5
0.4
0.3
VDD = +12V
VSS = 0V
0.2
0.1
0
–15
VDD = +5V
VSS = –5V
–10
–5
0
VS (V)
5
10
15
06119-002
CHARGE INJECTION (pC)
0.8
The iCMOS (industrial CMOS) modular manufacturing
process combines high voltage CMOS (complementary metaloxide semiconductor) and bipolar technologies. It enables the
development of a wide range of high performance analog ICs
capable of 33 V operation in a footprint that no other generation
of high voltage devices has been able to achieve. Unlike analog
ICs using conventional CMOS processes, iCMOS components
can tolerate high supply voltages while providing increased
performance, dramatically lower power consumption, and
reduced package size.
Figure 2. Source-to-Drain Charge Injection vs. Source Voltage
Rev. B
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ADG1206/ADG1207
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Absolute Maximum Ratings ............................................................7
Applications ....................................................................................... 1
ESD Caution...................................................................................7
Functional Block Diagrams ............................................................. 1
Pin Configurations and Function Descriptions ............................8
General Description ......................................................................... 1
Typical Performance Characteristics ........................................... 12
Revision History ............................................................................... 2
Terminology .................................................................................... 16
Specifications..................................................................................... 3
Test Circuits ..................................................................................... 17
Dual Supply ................................................................................... 3
Outline Dimensions ....................................................................... 19
Single Supply ................................................................................. 5
Ordering Guide .......................................................................... 19
REVISION HISTORY
4/16—Rev. A to Rev. B
Changed CP-32-2 to CP-32-7 ...................................... Throughout
Changes to Figure 3, Figure 4, and Table 4 ................................... 8
Changes to Figure 5, Figure 6, and Table 6 ................................. 10
Updated Outline Dimensions ....................................................... 20
Changes to Ordering Guide .......................................................... 20
3/09—Rev. 0 to Rev. A
Change to IDD Parameter, Table 1 ................................................... 4
Change to IDD Parameter, Table 2 ................................................... 6
Updated Outline Dimensions ....................................................... 19
Changes to Ordering Guide .......................................................... 19
7/06—Revision 0: Initial Version
Rev. B | Page 2 of 20
Data Sheet
ADG1206/ADG1207
SPECIFICATIONS
DUAL SUPPLY
VDD = +15 V ± 10%, VSS = –15 V ± 10%, GND = 0 V, unless otherwise noted. 1
Table 1.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance, RON
On Resistance Match Between
Channels, ∆RON
On Resistance Flatness, RFLAT (On)
LEAKAGE CURRENTS
Source Off Leakage, IS (Off )
Drain Off Leakage, ID (Off )
Channel On Leakage, ID, IS (On)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current, IINL or IINH
+25°C
−40°C to
+85°C
−40°C to
+125°C
VSS to VDD
120
200
3.5
6
20
64
±0.03
±0.2
±0.05
±0.2
±0.08
±0.2
240
270
10
12
76
83
±0.6
±1
±0.6
±2
±0.6
±2
2.0
0.8
±0.005
±0.1
Digital Input Capacitance, CIN
DYNAMIC CHARACTERISTICS 2
Transition Time, tTRANSITION
2
Unit
Test Conditions/Comments
V
Ω typ
Ω max
Ω typ
VS = ±10 V, IS = −1 mA; see Figure 28
VDD = +13.5 V, VSS = −13.5 V
VS = ±10 V, IS = −1 mA
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA typ
µA max
pF typ
Break-Before-Make Time Delay, tBBM
80
130
75
95
85
100
20
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Total Harmonic Distortion + Noise
0.5
−85
−85
0.15
ns typ
ns max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
% typ
−3 dB Bandwidth ADG1206
−3 dB Bandwidth ADG1207
CS (Off )
280
490
1.5
2
11
12
7
9
MHz typ
MHz typ
pF typ
pF max
pF typ
pF max
pF typ
pF max
tON (EN)
tOFF (EN)
165
185
105
115
125
140
10
CD (Off ) ADG1206
CD (Off ) ADG1207
Rev. B | Page 3 of 20
VS = −5 V, 0 V, +5 V; IS = −1 mA
VD = ±10 V, VS = ∓10 V; see Figure 29
VS = 1 V, 10 V; VD = 10 V, 1 V; see Figure 29
VS = VD = ±10 V; see Figure 30
VIN = VINL or VINH
RL = 300 Ω, CL = 35 pF
VS = 10 V; see Figure 31
RL = 300 Ω, CL = 35 pF
VS = 10 V; see Figure 33
RL = 300 Ω, CL = 35 pF
VS = 10 V; see Figure 33
RL = 300 Ω, CL = 35 pF
VS1 = VS2 = 10 V; see Figure 32
VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 34
RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 35
RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 37
RL = 10 kΩ, 5 V rms, f = 20 Hz to 20 kHz;
see Figure 38
RL = 50 Ω, CL = 5 pF; see Figure 36
RL = 50 Ω, CL = 5 pF; see Figure 36
f = 1 MHz, VS = 0 V
f = 1 MHz, VS = 0 V
f = 1 MHz, VS = 0 V
f = 1 MHz, VS = 0 V
f = 1 MHz, VS = 0 V
f = 1 MHz, VS = 0 V
ADG1206/ADG1207
Parameter
CD, CS (On) ADG1206
CD, CS (On) ADG1207
POWER REQUIREMENTS
IDD
Data Sheet
+25°C
13
15
8
10
−40°C to
+85°C
−40°C to
+125°C
0.002
1.0
IDD
260
475
ISS
0.002
VDD/VSS
1
2
1.0
±5/±16.5
Temperature range for Y version is −40°C to +125°C.
Guaranteed by design, not subject to production test.
Rev. B | Page 4 of 20
Unit
pF typ
pF max
pF typ
pF max
µA typ
µA max
µA typ
µA max
µA typ
µA max
V min/max
Test Conditions/Comments
f = 1 MHz, VS = 0 V
f = 1 MHz, VS = 0 V
f = 1 MHz, VS = 0 V
f = 1 MHz, VS = 0 V
VDD = +16.5 V, VSS = −16.5 V
Digital inputs = 0 V or VDD
Digital inputs = 5 V
Digital inputs = 0 V, 5 V, or VDD
GND = 0V
Data Sheet
ADG1206/ADG1207
SINGLE SUPPLY
VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted. 1
Table 2.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance, RON
On Resistance Match Between
Channels, ∆RON
On Resistance Flatness, RFLAT (On)
LEAKAGE CURRENTS
Source Off Leakage, IS (Off )
Drain Off Leakage, ID (Off )
Channel On Leakage, ID, IS (On)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current, IINL or IINH
+25°C
−40°C to
+85°C
−40°C to
+125°C
0 to VDD
300
475
5
16
60
±0.02
±0.2
±0.05
±0.2
±0.08
±0.2
567
625
26
27
±0.6
±1
±0.6
±2
±0.6
±2
2.0
0.8
±0.001
±0.1
Digital Input Capacitance, CIN
DYNAMIC CHARACTERISTICS 2
Transition Time, tTRANSITION
tON (EN)
tOFF (EN)
Break-Before-Make Time Delay, tBBM
3
100
140
80
100
90
110
25
175
200
120
130
130
155
15
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
−3 dB Bandwidth ADG1206
−3 dB Bandwidth ADG1207
CS (Off )
CD (Off ) ADG1206
CD (Off ) ADG1207
CD, CS (On) ADG1206
CD, CS (On) ADG1207
0.2
−85
−85
185
300
1.5
2
13
15
9
11
15
17
10
12
Rev. B | Page 5 of 20
Unit
Test Conditions/Comments
V
Ω typ
Ω max
Ω typ
VS = 0 V to10 V, IS = −1 mA; see Figure 28
VDD = 10.8 V, VSS = 0 V
VS = 0 V to 10 V, IS = −1 mA
Ω max
Ω typ
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
MHz typ
MHz typ
pF typ
pF max
pF typ
pF max
pF typ
pF max
pF typ
pF max
pF typ
pF max
VS = 3 V, 6 V, 9 V; IS = −1 mA
VDD = 13.2 V
VS = 1 V/10 V, VD = 10 V/1 V; see Figure 29
VS = 1 V/10 V, VD = 10 V/1 V; see Figure 29
VS = VD = 1 V or 10 V; see Figure 30
VIN = VINL or VINH
RL = 300 Ω, CL = 35 pF
VS = 8 V; see Figure 31
RL = 300 Ω, CL = 35 pF
VS = 8 V; see Figure 33
RL = 300 Ω, CL = 35 pF
VS = 8 V; see Figure 33
RL = 300 Ω, CL = 35 pF
VS1 = VS2 = 8 V; see Figure 32
VS = 6 V, RS = 0 Ω, CL = 1 nF; see Figure 34
RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 35
RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 37
RL = 50 Ω, CL = 5 pF; see Figure 36
RL = 50 Ω, CL = 5 pF; see Figure 36
f = 1 MHz, VS = 6 V
f = 1 MHz, VS = 6 V
f = 1 MHz, VS = 6 V
f = 1 MHz, VS = 6 V
f = 1 MHz, VS = 6 V
f = 1 MHz, VS = 6 V
f = 1 MHz, VS = 6 V
f = 1 MHz, VS = 6 V
f = 1 MHz, VS = 6 V
f = 1 MHz, VS = 6 V
ADG1206/ADG1207
Parameter
POWER REQUIREMENTS
IDD
Data Sheet
+25°C
−40°C to
+85°C
−40°C to
+125°C
0.002
1.0
IDD
VDD
1
2
260
475
5/16.5
Temperature range for Y version is −40°C to +125°C.
Guaranteed by design, not subject to production test.
Rev. B | Page 6 of 20
Unit
µA typ
µA max
µA typ
µA max
V min/max
Test Conditions/Comments
VDD = 13.2 V
Digital inputs = 0 V or VDD
Digital inputs = 5
VSS = 0 V, GND = 0 V
Data Sheet
ADG1206/ADG1207
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
VDD to VSS
VDD to GND
VSS to GND
Analog, Digital Inputs 1
Continuous Current, S or D
Peak Current, S or D (Pulsed at 1 ms,
10% Duty Cycle Maximum)
Operating Temperature Range
Industrial (Y Version)
Storage
Junction Temperature
28-Lead TSSOP Thermal Impedance
θJA
θJC
32-Lead LFCSP Thermal Impedance
θJA
Reflow Soldering Peak Temperature
(RoHS Compliant)
1
Rating
35 V
−0.3 V to +25 V
+0.3 V to −25 V
VSS − 0.3 V to VDD + 0.3 V
or 30 mA, whichever
occurs first
30 mA
100 mA
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Only one absolute maximum rating may be applied at any
one time.
ESD CAUTION
–40°C to +125°C
–65°C to +150°C
150°C
97.9°C/W
14°C/W
27.27°C/W
260(+0/−5)°C
Overvoltages at A, EN, S, or D are clamped by internal diodes. Current should
be limited to the maximum ratings given.
Rev. B | Page 7 of 20
ADG1206/ADG1207
Data Sheet
28 D
2
27 VSS
NIC
3
26 S8
S16
4
25 S7
S15
5
24 S6
S14
6
S13
7
S12
8
S11
9
20 S2
S10 10
19 S1
S9 11
18 EN
GND 12
17 A0
NIC 13
16 A1
A3 14
15 A2
22 S4
NIC = NO INTERNAL CONNECTION
ADG1206
TOP VIEW
(Not to Scale)
24
23
22
21
20
19
18
17
S8
S7
S6
S5
S4
S3
S2
S1
9
10
11
12
13
14
15
16
21 S3
1
2
3
4
5
6
7
8
GND
A3
A2
NIC
NIC
A1
A0
EN
TOP VIEW
(Not to Scale)
S16
S15
S14
S13
S12
S11
S10
S9
23 S5
1. NIC = NO INTERNAL CONNECTION.
2. THE EXPOSED PAD MUST BE TIED
TO THE SUBSTRATE, VSS.
06119-003
ADG1206
Figure 3. ADG1206 TSSOP Pin Configuration
06119-004
1
NIC
32
31
30
29
28
27
26
25
VDD
NIC
VDD
NIC
D
NIC
NIC
NIC
VSS
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
Figure 4. ADG1206 LFCSP Pin Configuration
Table 4. ADG1206 Pin Function Descriptions
TSSOP
1
2, 3, 13
4
5
6
7
8
9
10
11
12
14
15
16
17
18
Pin Number
LFCSP
31
12, 13, 26, 27,
28, 30, 32
1
2
3
4
5
6
7
8
9
10
11
14
15
16
Mnemonic
VDD
NIC
Description
Most Positive Power Supply Potential.
No Internal Connection.
S16
S15
S14
S13
S12
S11
S10
S9
GND
A3
A2
A1
A0
EN
Source Terminal 16. Can be an input or an output.
Source Terminal 15. Can be an input or an output.
Source Terminal 14. Can be an input or an output.
Source Terminal 13. Can be an input or an output.
Source Terminal 12. Can be an input or an output.
Source Terminal 11. Can be an input or an output.
Source Terminal 10. Can be an input or an output.
Source Terminal 9. Can be an input or an output.
Ground (0 V) Reference.
Logic Control Input.
Logic Control Input.
Logic Control Input.
Logic Control Input.
Active High Digital Input. When this pin is low, the device is disabled and all switches are
turned off. When this pin is high, the Ax logic inputs determine which switch is turned on.
Source Terminal 1. Can be an input or an output.
Source Terminal 2. Can be an input or an output.
Source Terminal 3. Can be an input or an output.
Source Terminal 4. Can be an input or an output.
Source Terminal 5. Can be an input or an output.
Source Terminal 6. Can be an input or an output.
Source Terminal 7. Can be an input or an output.
Source Terminal 8. Can be an input or an output.
Most Negative Power Supply Potential. In single-supply applications, this pin can be
connected to ground.
Drain Terminal. Can be an input or an output.
Exposed Pad. The exposed pad must be tied to substrate, VSS.
19
20
21
22
23
24
25
26
27
17
18
19
20
21
22
23
24
25
S1
S2
S3
S4
S5
S6
S7
S8
VSS
28
Not applicable
29
0
D
EPAD
Rev. B | Page 8 of 20
Data Sheet
ADG1206/ADG1207
Table 5. ADG1206 Truth Table
A3
X
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
A2
X
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
A1
X
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
A0
X
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
EN
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Rev. B | Page 9 of 20
On Switch
None
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Data Sheet
28 DA
2
27 VSS
NIC
3
26 S8A
S8B
4
25 S7A
S7B
5
24 S6A
S6B
6
S5B
7
S4B
8
S3B
9
20 S2A
S2B 10
19 S1A
S1B 11
18 EN
GND 12
17 A0
NIC 13
16 A1
NIC 14
15 A2
22 S4A
NIC = NO INTERNAL CONNECTION
ADG1207
TOP VIEW
(Not to Scale)
24
23
22
21
20
19
18
17
S8A
S7A
S6A
S5A
S4A
S3A
S2A
S1A
9
10
11
12
13
14
15
16
21 S3A
1
2
3
4
5
6
7
8
GND
A2
NIC
NIC
NIC
A1
A0
EN
TOP VIEW
(Not to Scale)
S8B
S7B
S6B
S5B
S4B
S3B
S2B
S1B
23 S5A
1. NIC = NO INTERNAL CONNECTION.
2. THE EXPOSED PAD MUST BE TIED
TO THE SUBSTRATE, VSS.
06119-036
ADG1207
Figure 5. ADG1207 TSSOP Pin Configuration
06119-037
1
DB
32
31
30
29
28
27
26
25
VDD
NIC
DB
NIC
VDD
NIC
DA
NIC
VSS
ADG1206/ADG1207
Figure 6. ADG1207 LFCSP Pin Configuration
Table 6. ADG1207 Pin Function Descriptions
4
5
6
7
8
9
10
11
12
15
16
17
18
Pin Number
LFCSP
29
31
11, 12, 13, 26,
28, 30, 32
1
2
3
4
5
6
7
8
9
10
14
15
16
19
20
21
22
23
24
25
26
27
17
18
19
20
21
22
23
24
25
S1A
S2A
S3A
S4A
S5A
S6A
S7A
S8A
VSS
28
Not applicable
27
0
DA
EPAD
TSSOP
1
2
3, 13, 14
Mnemonic
VDD
DB
NIC
Description
Most Positive Power Supply Potential.
Drain Terminal B. Can be an input or an output.
No Internal Connection.
S8B
S7B
S6B
S5B
S4B
S3B
S2B
S1B
GND
A2
A1
A0
EN
Source Terminal 8B. Can be an input or an output.
Source Terminal 7B. Can be an input or an output.
Source Terminal 6B. Can be an input or an output.
Source Terminal 5B. Can be an input or an output.
Source Terminal 4B. Can be an input or an output.
Source Terminal 3B. Can be an input or an output.
Source Terminal 2B. Can be an input or an output.
Source Terminal 1B. Can be an input or an output.
Ground (0 V) Reference.
Logic Control Input.
Logic Control Input.
Logic Control Input.
Active High Digital Input. When this pin is low, the device is disabled and all switches are
turned off. When this pin is high, the Ax logic inputs determine which switch is turned on.
Source Terminal 1A. Can be an input or an output.
Source Terminal 2A. Can be an input or an output.
Source Terminal 3A. Can be an input or an output.
Source Terminal 4A. Can be an input or an output.
Source Terminal 5A. Can be an input or an output.
Source Terminal 6A. Can be an input or an output.
Source Terminal 7A. Can be an input or an output.
Source Terminal 8A. Can be an input or an output.
Most Negative Power Supply Potential. In single-supply applications, this pin can be
connected to ground.
Drain Terminal A. Can be an input or an output.
Exposed Pad. The exposed pad must be tied to the substrate, VSS.
Rev. B | Page 10 of 20
Data Sheet
ADG1206/ADG1207
Table 7. ADG1207 Truth Table
A2
X
0
0
0
0
1
1
1
1
A1
X
0
0
1
1
0
0
1
1
A0
X
0
1
0
1
0
1
0
1
EN
0
1
1
1
1
1
1
1
1
On Switch Pair
None
1
2
3
4
5
6
7
8
Rev. B | Page 11 of 20
ADG1206/ADG1207
Data Sheet
TYPICAL PERFORMANCE CHARACTERISTICS
200
250
TA = 25°C
180
VDD = +15V
VSS = –15V
VDD = +15V
VSS = –15V
VDD = +13.5V
VSS = –13.5V
160
200
TA = +125°C
ON RESISTANCE (Ω)
ON RESISTANCE (Ω)
140
120
VDD = +16.5V
VSS = –16.5V
100
80
60
40
TA = +85°C
150
TA = +25°C
100
TA = –40°C
50
–9 –6 –3
0
3
6
9
SOURCE OR DRAIN VOLTAGE (V)
12
15
18
0
–15
06119-005
0
–18 –15 –12
Figure 7. On Resistance as a Function of VD (VS) for Dual Supply
15
10
600
TA = 25°C
VDD = +4.5V
VSS = –4.5V
VDD = 12V
VSS = 0V
TA = +125°C
500
500
VDD = +5V
VSS = –5V
ON RESISTANCE (Ω)
400
VDD = +5.5V
VSS = –5.5V
300
200
100
TA = +85°C
400
TA = +25°C
300
TA = –40°C
200
–6
–4
–2
0
2
SOURCE OR DRAIN VOLTAGE (V)
4
6
0
06119-006
0
Figure 8. On Resistance as a Function of VD (VS) for Dual Supply
0
2
4
6
8
SOURCE OR DRAIN VOLTAGE (V)
10
12
06119-009
100
Figure 11. On Resistance as a Function of VD (VS) for Different Temperatures,
Single Supply
450
1200
TA = 25°C
400
VDD = 10.8V
VSS = 0V
VDD = +15V
VSS = –15V
VBIAS = +10V/–10V
1000
800
350
VDD = 12V
VSS = 0V
600
LEAKAGE (pA)
300
250
VDD = 13.2V
VSS = 0V
200
ID (OFF) – +
ID, IS (ON) + +
150
IS (OFF) + –
400
200
0
–200
IS (OFF) – +
–400
–600
100
ID (OFF) + –
–800
50
–1000
0
2
4
6
8
10
SOURCE OR DRAIN VOLTAGE (V)
12
14
Figure 9. On Resistance as a Function of VD (VS) for Single Supply
ID, IS (ON) – –
–1200
06119-007
0
0
20
40
60
80
TEMPERATURE (°C)
100
120
06119-010
ON RESISTANCE (Ω)
5
–5
0
SOURCE OR DRAIN VOLTAGE (V)
Figure 10. On Resistance as a Function of VD (VS) for Different Temperatures,
Dual Supply
600
ON RESISTANCE (Ω)
–10
06119-008
20
Figure 12. ADG1206 Leakage Currents as a Function of Temperature,
Dual Supply
Rev. B | Page 12 of 20
Data Sheet
ADG1206/ADG1207
6
400
ID (OFF) – +
VDD = 12V
VSS = 0V
VBIAS = 1V/10V
300
4
CHARGE INJECTION (pC)
IS (OFF) + –
200
LEAKAGE (pA)
DEMUX (DRAIN TO SOURCE)
TA = 25°C
ID, IS (ON )+ +
100
0
–100
IS (OFF) – +
–200
ID (OFF) + –
VDD = +5V
VSS = –5V
2
0
VDD = +12V
VSS = 0V
VDD = +15V
VSS = –15V
–2
–4
ID, IS (ON) – –
0
20
40
60
80
TEMPERATURE (°C)
100
120
–6
–15
06119-011
–400
Figure 13. ADG1206 Leakage Currents as a Function of Temperature,
Single Supply
–10
–5
0
VS (V)
15
350
IDD PER CHANNEL
TA = 25°C
180
300
VDD = +5V
VSS = –5V
160
VDD = +15V
VSS = –15V
140
250
120
TIME (ns)
100
80
60
200
150
VDD = +12V
VSS = 0V
100
50
VDD = +12V
VSS = 0V
0
0
2
4
6
8
10
LOGIC, INX (V)
12
14
16
0
–40
06119-012
20
0
20
40
60
80
100
120
TEMPERATURE (°C)
Figure 14. IDD vs. Logic Level
Figure 17. Transition Time vs. Temperature
1.0
0
MUX (SOURCE TO DRAIN)
0.9 TA = 25°C
–10
0.8
–20
OFF ISOLATION (dB)
0.7
0.6
VDD = +15V
VSS = –15V
0.5
0.4
0.3
VDD = +12V
VSS = 0V
0.2
VDD = +15V
VSS = –15V
TA = 25°C
–30
–40
–50
–60
–70
–80
–90
0.1
VDD = +5V
VSS = –5V
–10
–5
0
VS (V)
–100
5
10
15
06119-013
0
–15
–20
06119-050
VDD = +15V
VSS = –15V
40
Figure 15. Source-to-Drain Charge Injection vs. Source Voltage
–110
10k
100k
1M
10M
FREQUENCY (Hz)
100M
Figure 18. Off Isolation vs. Frequency
Rev. B | Page 13 of 20
1G
06119-016
IDD (µA)
10
Figure 16. Drain-to-Source Charge Injection vs. Source Voltage
200
CHARGE INJECTION (pC)
5
06119-014
–300
ADG1206/ADG1207
Data Sheet
10
0
–10
LOAD = 10kΩ
TA = 25°C
TA = 25°C
–20
1
–40
THD + N (%)
CROSSTALK (dB)
–30
ADJACENT
CHANNELS
–50
–60
–70
VDD = +5V, VSS = –5V, VS = +3.5V rms
VDD = +15V, VSS = –15V, VS = +5V rms
0.1
–80
NON ADJACENT
CHANNELS
–90
100k
1M
10M
100M
1G
FREQUENCY (Hz)
0.01
10
06119-051
–110
10k
20
0
TA = 25°C
VDD = +15V
VSS = –15V
TA = 25°C
18
–20
16
CAPACITANCE (pF)
–30
–40
ADJACENT
CHANNELS
–50
–60
–70
–80
14
SOURCE/DRAIN ON
12
10
DRAIN OFF
8
6
4
2
NON ADJACENT
CHANNELS
–110
10k
100k
1M
10M
100M
1G
FREQUENCY (Hz)
SOURCE OFF
0
–15
06119-052
–100
–10
–5
0
5
10
15
06119-054
–90
12
06119-055
CROSSTALK (dB)
100k
10k
Figure 22. THD + N vs. Frequency
Figure 19. ADG1206 Crosstalk vs. Frequency
–10
1k
FREQUENCY (Hz)
100
06119-020
–100
VBIAS (V)
Figure 23. ADG1206 Capacitance vs. Source Voltage,
±15 V Dual Supply
Figure 20. ADG1207 Crosstalk vs. Frequency
20
–4
–6
18
ADG1207
SOURCE/DRAIN ON
16
CAPACITANCE (pF)
–10
ADG1206
–12
–14
14
DRAIN OFF
12
10
8
6
VDD = 12V
VSS = 0V
TA = 25°C
–16
4
–18
VDD = +15V
VSS = –15V
TA = 25°C
–20
10k
100k
SOURCE OFF
2
1M
10M
100M
FREQUENCY (Hz)
Figure 21. On Response vs. Frequency
1G
0
06119-053
ON RESPONSE (dB)
–8
0
2
4
6
VBIAS (V)
8
10
Figure 24. ADG1206 Capacitance vs. Source Voltage, 12 V Single Supply
Rev. B | Page 14 of 20
Data Sheet
12
ADG1206/ADG1207
0
VDD = +15V
VSS = –15V
TA = 25°C
10
–10
–20
–30
8
AC PSRR (dB)
CAPACITANCE (pF)
SOURCE/DRAIN ON
TA = 25°C
NO DECOUPLING CAPACITORS
VDD = +15V
VSS = –15V
V p-p = 0.63V
DRAIN OFF
6
4
–40
–50
–60
–70
–80
2
SOURCE OFF
–5
0
5
10
15
VBIAS (V)
Figure 25. ADG1207 Capacitance vs. Source Voltage, ±15 V Dual Supply
14
VDD = 12V
VSS = 0V
TA = 25°C
12
DRAIN OFF
8
6
4
2
SOURCE OFF
0
0
2
4
6
VBIAS (V)
8
10
12
06119-057
CAPACITANCE (pF)
SOURCE/DRAIN ON
10
Figure 26. ADG1207 Capacitance vs. Source Voltage, 12 V Single Supply
Rev. B | Page 15 of 20
–100
100
1k
10k
100k
FREQUENCY (Hz)
Figure 27. ACPSRR vs. Frequency
1M
10M
06119-058
–10
06119-056
–90
0
–15
ADG1206/ADG1207
Data Sheet
TERMINOLOGY
TBBM
Off time measured between the 80% points of the switches
when switching from one address state to another.
RON
Ohmic resistance between D and S.
∆RON
Difference between the RON of any two channels.
RFLAT(ON)
Flatness is defined as the difference between the maximum and
minimum value of on resistance as measured.
VINL
Maximum input voltage for Logic 0.
VINH
Minimum input voltage for Logic 1.
IS (Off)
Source leakage current when the switch is off.
IINL (IINH)
Input current of the digital input.
ID (Off)
Drain leakage current when the switch is off.
IDD
Positive supply current.
ID, IS (On)
Channel leakage current when the switch is on.
ISS
Negative supply current.
VD (VS)
Analog voltage on Terminals D and S.
Off Isolation
A measure of unwanted signal coupling through an off channel.
CS (Off)
Channel input capacitance for the off condition.
Charge Injection
A measure of the glitch impulse transferred from the digital
input to the analog output during switching.
CD (Off)
Channel output capacitance for the off condition.
Bandwidth
The frequency at which the output is attenuated by 3 dB.
CD, CS (On)
On switch capacitance.
On Response
The frequency response of the on switch.
CIN
Digital input capacitance.
tON (EN)
Delay time between the 50% and 90% points of the digital input
and the switch on condition.
tOFF (EN)
Delay time between the 50% and 90% points of the digital input
and the switch off condition.
tTRANSITION
Delay time between the 50% and 90% points of the digital
inputs and the switch on condition when switching from one
address state to another.
THD + N
The ratio of the harmonic amplitude plus noise of the signal to
the fundamental.
ACPSRR (AC Power Supply Rejection Ratio)
Measures the ability of a device to avoid coupling noise and
spurious signals that appear on the supply voltage pin to the
output of the switch. The dc voltage on the device is modulated
by a sine wave of 0.62 V p-p. The ratio of the amplitude of
signal on the output to the amplitude of the modulation is the
ACPSRR.
Rev. B | Page 16 of 20
Data Sheet
ADG1206/ADG1207
TEST CIRCUITS
S
D
S
D
A
VS
VD
06119-025
A
VD
Figure 30. On Leakage
Figure 29. Off Leakage
3V
50%
D
NIC = NO INTERNAL CONNECTION
Figure 28. On Resistance
ADDRESS
DRIVE (VIN)
S
NIC
IDS
VS
ID (ON)
ID (OFF)
50%
tr < 20ns
tf < 20ns
VDD
VSS
VDD
VSS
A0
0V
VIN
tTRANSITION
S1
A1
50Ω
VS1
S2 TO S15
A2
A3
tTRANSITION
VS16
S16
ADG12061
90%
2.4V
OUTPUT
OUTPUT
D
EN
GND
300Ω
35pF
06119-028
90%
1SIMILAR CONNECTION FOR ADG1207.
Figure 31. Address to Output Switching Times, tTRANSITION
3V
ADDRESS
DRIVE (VIN)
VDD
VSS
VDD
VSS
A0
VIN
0V
S1
A1
50Ω
VS
S2 TO S15
A2
A3
S16
80%
ADG12061
80%
OUTPUT
2.4V
OUTPUT
D
EN
GND
300Ω
35pF
06119-029
tBBM
1SIMILAR CONNECTION FOR ADG1207.
Figure 32. Break-Before-Make Delay, tBBM
3V
ENABLE
DRIVE (VIN)
50%
VDD
VSS
VDD
VSS
A0
50%
S1
A1
A2
0V
VS
S2 TO S16
A3
tOFF (EN)
0.9VO
OUTPUT
ADG12061
0.9VO
VIN
50Ω
OUTPUT
D
EN
GND
300Ω
1SIMILAR CONNECTION FOR ADG1207.
Figure 33. Enable Delay, tON (EN), tOFF (EN)
Rev. B | Page 17 of 20
35pF
06119-030
tON (EN)
06119-027
A
06119-026
IS (OFF)
V
ADG1206/ADG1207
Data Sheet
3V
VDD
VSS
VDD
A0
VSS
A1
A2
VIN
A3
ADG12061
VOUT
∆VOUT
S
D
EN
VS
QINJ = CL × ∆VOUT
GND
VIN
CL
1nF
VOUT
06119-031
RS
1SIMILAR CONNECTION FOR ADG1207.
Figure 34. Charge Injection
VDD
VSS
0.1µF
VDD
NETWORK
ANALYZER
NETWORK
ANALYZER
VSS
VOUT
S
VDD
S2
GND
VOUT
OFF ISOLATION = 20 log
VS
VOUT
VS
06119-032
RL
50Ω
VDD
0.1µF
VSS
0.1µF
0.1µF
NETWORK
ANALYZER
S
AUDIO PRECISION
VDD
VSS
RS
S
50Ω
IN
VS
D
VS
V p-p
D
INSERTION LOSS = 20 log
VOUT
GND
RL
10kΩ
VOUT
06119-035
VOUT WITH SWITCH
VOUT WITHOUT SWITCH
VIN
06119-033
RL
50Ω
GND
VOUT
VS
Figure 37. Channel-to-Channel Crosstalk
VSS
VSS
R
50Ω
GND
CHANNEL-TO-CHANNEL CROSSTALK = 20 log
Figure 35. Off Isolation
VDD
VSS
D
VS
D
VDD
0.1µF
S1
RL
50Ω
50Ω
50Ω
0.1µF
VSS
0.1µF
06119-034
VDD
0.1µF
Figure 38. THD + Noise
Figure 36. Bandwidth
Rev. B | Page 18 of 20
Data Sheet
ADG1206/ADG1207
OUTLINE DIMENSIONS
9.80
9.70
9.60
28
15
4.50
4.40
4.30
6.40 BSC
1
14
PIN 1
0.65
BSC
0.15
0.05
0.30
0.19
COPLANARITY
0.10
1.20 MAX
SEATING
PLANE
8°
0°
0.20
0.09
0.75
0.60
0.45
COMPLIANT TO JEDEC STANDARDS MO-153-AE
Figure 39. 28-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-28)
Dimensions shown in millimeters
0.30
0.25
0.18
32
25
24
0.50
BSC
TOP VIEW
0.80
0.75
0.70
8
16
0.05 MAX
0.02 NOM
COPLANARITY
0.08
0.20 REF
SEATING
PLANE
3.25
3.10 SQ
2.95
EXPOSED
PAD
17
0.50
0.40
0.30
PIN 1
INDICATOR
1
9
BOTTOM VIEW
0.25 MIN
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
SECTION OF THIS DATA SHEET.
COMPLIANT TO JEDEC STANDARDS MO-220-WHHD.
112408-A
PIN 1
INDICATOR
5.10
5.00 SQ
4.90
Figure 40. 32-Lead Lead Frame Chip Scale Package [LFCSP]
5 mm × 5 mm Body and 0.75 mm Package Height
(CP-32-7)
Dimensions shown in millimeters
ORDERING GUIDE
Model 1
ADG1206YRUZ
ADG1206YRUZ-REEL7
ADG1206YCPZ-REEL7
ADG1207YRUZ
ADG1207YRUZ-REEL7
ADG1207YCPZ-REEL7
1
Temperature Range
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
Description
28-Lead Thin Shrink Small Outline Package [TSSOP]
28-Lead Thin Shrink Small Outline Package [TSSOP]
32-Lead Lead Frame Chip Scale Package [LFCSP]
28-Lead Thin Shrink Small Outline Package [TSSOP]
28-Lead Thin Shrink Small Outline Package [TSSOP]
32-Lead Lead Frame Chip Scale Package [LFCSP]
Z = RoHS Compliant Part.
Rev. B | Page 19 of 20
Package Option
RU-28
RU-28
CP-32-7
RU-28
RU-28
CP-32-7
ADG1206/ADG1207
Data Sheet
NOTES
©2006–2016 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D06119-0-4/16(B)
Rev. B | Page 20 of 20
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