0.28 Ω, CMOS, 1.65 V to 3.6 V, Single SPST Switch ADG841-KGD Known Good Die FEATURES FUNCTIONAL BLOCK DIAGRAM Ultralow on resistance 0.28 Ω typical 0.48 Ω max at 125°C Excellent audio performance, ultralow distortion 0.025 Ω typical 0.052 Ω max RON flatness 1.65 V to 3.6 V single supply High current carrying capability 300 mA continuous current 500 mA peak current Automotive temperature range: −40°C to +125°C Rail-to-rail operation Typical power consumption (<0.01 μW) Known good die (KGD): these die are fully guaranteed to data sheet specifications ADG841-KGD S D SWITCH SHOWN FOR A LOGIC 1 INPUT 10266-001 IN Figure 1. APPLICATIONS Handsets PDAs MP3 players Power routing Battery-powered systems Communication systems Modems PCMCIA cards GENERAL DESCRIPTION PRODUCT HIGHLIGHTS The ADG841-KGD is a low voltage CMOS device containing a single-pole, single-throw (SPST) switch. The ADG841-KGD is closed for a Logic 1 input. The device offers ultralow on resistance of less than 0.48 Ω over the full temperature range. The ADG841-KGD is fully specified for 3.3 V, 2.5 V, and 1.8 V supply operation. 1. 2. 3. Each switch conducts equally well in both directions when on, and has an input signal range that extends to the supplies. Additional application and technical information can be found in the ADG841 data sheet. Rev. B 4. <0.48 Ω over full temperature range of −40°C to +125°C. Compatible with 1.8 V CMOS logic. High current handling capability (300 mA continuous current at 3.3 V). Low THD + N (0.02% typical). Table 1. ADG841-KGD Truth Table Logic (IN) 0 1 ADG841-KGD Off On Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. 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Technical Support www.analog.com ADG841-KGD Known Good Die TABLE OF CONTENTS Features .............................................................................................. 1 Specifications—1.65 V to 1.95 .........................................................5 Applications ....................................................................................... 1 Absolute Maximum Ratings ............................................................6 Functional Block Diagram .............................................................. 1 ESD Caution ..................................................................................6 General Description ......................................................................... 1 Pin Configuration and Function Descriptions..............................7 Product Highlights ........................................................................... 1 Test Circuits........................................................................................8 Revision History ............................................................................... 2 Outline Dimensions ..........................................................................9 Specifications—2.7 V to 3.6 V ........................................................ 3 Die Specifications and Assembly Recommendations ..............9 Specifications—2.5 V ± 0.2 V ......................................................... 4 Ordering Guide .............................................................................9 REVISION HISTORY 12/14—Rev. A to Rev. B Changes to Table 7 ............................................................................ 9 10/14—Rev. 0 to Rev. A Changes to Test Circuits Section Layout ....................................... 8 Changes to Table 7 ............................................................................ 9 11/11—Revision 0: Initial Version Rev. B | Page 2 of 9 Known Good Die ADG841-KGD SPECIFICATIONS—2.7 V TO 3.6 V VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted. The temperature range is −40°C to +125°C. Table 2. Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Flatness (RFLAT (ON)) LEAKAGE CURRENTS Source Off Leakage IS (OFF) Channel On Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IINH +25°C −40°C to +85°C −40°C to +125°C 0 V to VDD 0.28 0.37 0.025 0.034 0.43 0.48 0.044 0.052 ±0.2 ±0.2 2 0.8 0.005 tOFF Charge Injection Off Isolation Total Harmonic Distortion (THD + N) Insertion Loss −3 dB Bandwidth CS (OFF) CD (OFF) CD, CS (ON) POWER REQUIREMENTS IDD 3.2 10.5 14 6.5 7.8 200 −54 0.012 −0.02 21 160 160 238 15.5 16.5 8 8.2 0.003 1 1 Test Conditions/Comments V Ω typ Ω max Ω typ Ω max VDD = 2.7 V VDD = 2.7 V, VS = 0 V to VDD, IDS = −100 mA See Figure 3 VDD = 2.7 V, VS = 0 V to VDD, IDS = −100 mA nA typ nA typ ±0.1 Digital Input Capacitance, CIN DYNAMIC CHARACTERISTICS1 tON Unit 4 Guaranteed by design; not subject to production test. Rev. B | Page 3 of 9 V min V max µA typ µA max pF typ ns typ ns max ns typ ns max pC typ dB typ % dB typ MHz typ pF typ pF typ pF typ µA typ µA max VDD = 3.6 V VS = 0.6 V/3.3 V, VD = 3.3 V/0.6 V; see Figure 4 VS = VD = 0.6 V or 3.3 V; see Figure 5 VIN = VINL or VINH RL = 50 Ω, CL = 35 pF VS = 1.5 V; see Figure 8 RL = 50 Ω, CL = 35 pF VS = 1.5 V; see Figure 8 VS = 1.5 V, RS = 0 Ω, CL = 1 nF; see Figure 9 RL = 50 Ω, CL = 5 pF, f = 100 kHz; see Figure 6 RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 3 V p-p RL = 50 Ω, CL = 5 pF; see Figure 7 RL = 50 Ω, CL = 5 pF; see Figure 7 VDD = 3.6 V Digital inputs = 0 V or 3.6 V ADG841-KGD Known Good Die SPECIFICATIONS—2.5 V ± 0.2 V VDD = 2.5 V ± 0.2 V, GND = 0 V, unless otherwise noted. The temperature range is −40°C to +125°C. Table 3. Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Flatness (RFLAT (ON)) LEAKAGE CURRENTS Source Off Leakage IS (OFF) Channel On Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IINH +25°C −40°C to +85°C −40°C to +125°C 0 V to VDD 0.3 0.35 0.025 0.04 0.4 0.45 0.05 0.05 ±0.2 ±0.2 1.7 0.7 0.005 tOFF Charge Injection Off Isolation Total Harmonic Distortion (THD + N) Insertion Loss –3 dB Bandwidth CS (OFF) CD (OFF) CD, CS (ON) POWER REQUIREMENTS IDD 3.2 13 16.5 7 8.2 150 −54 0.022 −0.02 21 170 170 238 18 19 8.4 8.6 0.003 1 1 Test Conditions/Comments V Ω typ Ω max Ω typ Ω max VDD = 2.3 V, VS = 0 V to VDD, IDS = −100 mA See Figure 3 VDD = 2.3 V, VS = 0 V to VDD, IDS = −100 mA nA typ nA typ ±0.1 Digital Input Capacitance, CIN DYNAMIC CHARACTERISTICS1 tON Unit 4 Guaranteed by design; not subject to production test. Rev. B | Page 4 of 9 V min V max µA typ µA max pF typ ns typ ns max ns typ ns max pC typ dB typ % dB typ MHz typ pF typ pF typ pF typ µA typ µA max VDD = 2.7 V VS = 0.6 V/2.4 V, VD = 2.4 V/0.6 V; see Figure 4 VS = VD = 0.6 V or 2.4 V; see Figure 5 VIN = VINL or VINH RL = 50 Ω, CL = 35 pF VS = 1.5 V; see Figure 8 RL = 50 Ω, CL = 35 pF VS = 1.5 V; see Figure 8 VS = 1.25 V, RS = 0 Ω, CL = 1 nF; see Figure 9 RL = 50 Ω, CL = 5 pF, f = 100 kHz; see Figure 6 RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 1.5 V p-p RL = 50 Ω, CL = 5 pF; see Figure 7 RL = 50 Ω, CL = 5 pF; see Figure 7 VDD = 2.7 V Digital inputs = 0 V or 2.7 V Known Good Die ADG841-KGD SPECIFICATIONS—1.65 V TO 1.95 VDD = 1.65 V to1.95 V, GND = 0 V, unless otherwise noted. The temperature range is −40°C to +125°C. Table 4. Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Flatness (RFLAT (ON)) LEAKAGE CURRENTS Source Off Leakage IS (OFF) Channel On Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IINH +25°C −40°C to +85°C −40°C to +125°C 0 V to VDD 0.37 0.4 0.6 0.17 0.84 1.8 0.84 1.8 ±0.2 ±0.2 0.65 VDD 0.35 VDD 0.005 tOFF Charge Injection Off Isolation Total Harmonic Distortion (THD + N) Insertion Loss −3 dB Bandwidth CS (OFF) CD (OFF) CD, CS (ON) POWER REQUIREMENTS IDD 4 19 26 8 9.5 100 −54 0.14 −0.02 21 178 178 238 28 30 9.8 10 0.003 1 1 V Ω typ Ω max Ω max Ω typ nA typ nA typ ±0.1 Digital Input Capacitance, CIN DYNAMIC CHARACTERISTICS1 tON Unit 4 Guaranteed by design; not subject to production test. Rev. B | Page 5 of 9 V min V max μA typ μA max pF typ ns typ ns max ns typ ns max pC typ dB typ % dB typ MHz typ pF typ pF typ pF typ μA typ μA max Test Conditions/Comments VDD = 1.8 V, VS = 0 V to VDD, IDS = −100 mA See Figure 3 VDD = 1.65 V, VS = 0 V to VDD, IDS = −100 mA VDD = 1.65 V, VS = 0 V to VDD, IDS = −100 mA VDD = 1.95 V VS = 0.6 V/1.65 V, VD = 1.65 V/0.6 V; see Figure 4 VS = VD = 0.6 V or 1.65 V; see Figure 5 VIN = VINL or VINH RL = 50 Ω, CL = 35 pF VS = 1.5 V; see Figure 8 RL = 50 Ω, CL = 35 pF VS = 1.5 V; see Figure 8 VS = 1 V, RS = 0 V, CL = 1 nF; see Figure 9 RL = 50 Ω, CL = 5 pF, f = 100 kHz; see Figure 6 RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 1.2 V p-p RL = 50 Ω, CL = 5 pF; see Figure 7 RL = 50 Ω, CL = 5 pF; see Figure 7 VDD = 1.95 V Digital inputs = 0 V or 1.95 V ADG841-KGD Known Good Die ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted. Table 5. Parameter VDD to GND Analog Inputs1 Digital Inputs1 Peak Current, S or D 3.3 V Operation 2.5 V Operation 1.8 V Operation Continuous Current, S or D 3.3 V Operation 2.5 V Operation 1.8 V Operation Operating Temperature Range Storage Temperature Range Junction Temperature 1 Rating −0.3 V to +4.6 V −0.3 V to VDD +0.3 V −0.3 V to 4.6 V or 10 mA, whichever occurs first 500 mA 460 mA 420 mA (pulsed at 1 ms, 10% duty cycle maximum) Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. ESD CAUTION 300 mA 275 mA 250 mA −40°C to +125°C −65°C to +150°C 150°C Overvoltages at S or D are clamped by internal diodes. Current should be limited to the maximum ratings given. Rev. B | Page 6 of 9 Known Good Die ADG841-KGD PIN CONFIGURATION AND FUNCTION DESCRIPTIONS 6 2 5 3 4 TOP VIEW (CIRCUIT SIDE) ADI LOGO 10266-002 1 Figure 2. Pad Configuration Table 6. Pad Function Descriptions Pad No. 1 2 3 4 5 6 X-Axis (μm) −254 −254 +6 +306 +249 +39 Y-Axis (μm) +401 −401 −401 −401 +401 +401 Mnemonic VDD IN S GND NC D Pad Type Single Single Single Single Single Single Rev. B | Page 7 of 9 Description Positive Power Supply Pad. Logic Control Input Pad. Source Pad. Ground Pad. No Connect. Drain Pad. ADG841-KGD Known Good Die TEST CIRCUITS VDD V 0.1µF D 10266-003 VS NETWORK ANALYZER VDD IDS IN 50Ω Figure 3. On Resistance S A D RL 50Ω GND A ADG841-KGD – V IN = 0 10266-004 VD OFF ISOLATION = 20 log Figure 4. Off Leakage VOUT VS Figure 6. Off Isolation ID (ON) D VDD A 0.1µF VD 10266-005 S VOUT VIN VS NC VS D ID (OFF) IS (OFF) 50Ω S 10266-008 S NETWORK ANALYZER VDD 50Ω S Figure 5. On Leakage IN 50Ω VS D RL 50Ω GND VOUT INSERTION LOSS = 20 log VOUT WITH SWITCH VOUT WITHOUT SWITCH Figure 7. Bandwidth VSS VDD 0.1µF 0.1µF VIN S 50% 50% 50% 50% D VOUT VS ADG841-KGD VSS VDD RL 300Ω IN CL 35pF VIN 90% 90% VOUT tON tOFF Figure 8. Switching Times, tON, tOFF VDD 0.1µF VIN ON VDD D VS OFF S VOUT CL 1nF IN VIN ADG841-KGD VOUT ΔVOUT QINJ = CL × ΔVOUT 10266-007 GND Figure 9. Charge Injection Rev. B | Page 8 of 9 10266-006 GND 10266-009 VIN Known Good Die ADG841-KGD OUTLINE DIMENSIONS 0.314 0.304 0.294 0.820 MAX 1 6 5 1.010 MAX 3 4 TOP VIEW SIDE VIEW (CIRCUIT SIDE) 0.07 × 0.07 11-04-2011-A 2 Figure 10. 6-Pad Bare Die [CHIP] (C-6-3) Dimensions shown in millimeters DIE SPECIFICATIONS AND ASSEMBLY RECOMMENDATIONS Table 7. Die Specifications Parameter Chip Size Scribe Line Width Die Size Thickness Bond Pad Bond Pad Composition Backside Passivation Value 735 × 925 85 × 85 820 × 1010 304 ± 10 70 × 70 99.5 Al, 0.5 Cu Bare Nitride Unit μm μm μm (maximum) μm μm (minimum) % Not Applicable Not Applicable Table 8. Assembly Recommendations Assembly Component Die Attach Bonding Method Bonding Sequence Recommendation Epoxy adhesive Gold ball or aluminum wedge Four first ORDERING GUIDE Model ADG841-KGD-CHIPS Temperature Range −40°C to +125°C Package Description 6-Pad Bare Die [CHIP] ©2011–2014 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D10266-0-12/14(B) Rev. B | Page 9 of 9 Package Option C-6-3