DLTS study of room-temperature defect
annealing in high-purity n-type Si
J. H. Blekaa , E. V. Monakhova , B. S. Avsetb and B. G. Svenssona
a
Department of Physics, Physical Electronics, University of Oslo, Oslo, Norway
b
The Norwegian Radiation Protection Authority, Oslo, Norway
Supported by the Norwegian Research Council
210th ECS Meeting – Cancun 2006
DLTS study of RT defect annealing in n-type Si – 1 / 10
Outline
Experimental details
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
DLTS study of RT defect annealing in n-type Si – 2 / 10
Outline
Experimental details
Results
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
DLTS study of RT defect annealing in n-type Si – 2 / 10
Outline
Experimental details
Results
Optimising the DLTS techniques
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
DLTS study of RT defect annealing in n-type Si – 2 / 10
Outline
Experimental details
Results
Optimising the DLTS techniques
Further results and discussion
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
DLTS study of RT defect annealing in n-type Si – 2 / 10
Outline
Experimental details
Results
Optimising the DLTS techniques
Further results and discussion
Summary
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
DLTS study of RT defect annealing in n-type Si – 2 / 10
Experimental details
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
p + -n−-n+ Si diodes
0.3 mm
Al
SiO2
p+
n−
5 × 1012 P/cm3
n+
7 mm
210th ECS Meeting – Cancun 2006
DLTS study of RT defect annealing in n-type Si – 3 / 10
Experimental details
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
p + -n−-n+ Si diodes
produced from high-purity
MCz wafers (5 × 1012 P/cm3 )
0.3 mm
Al
SiO2
p+
n−
5 × 1012 P/cm3
n+
7 mm
210th ECS Meeting – Cancun 2006
DLTS study of RT defect annealing in n-type Si – 3 / 10
Experimental details
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
p + -n−-n+ Si diodes
produced from high-purity
MCz wafers (5 × 1012 P/cm3 )
ordinary diode processing
0.3 mm
Al
SiO2
p+
n−
5 × 1012 P/cm3
n+
7 mm
210th ECS Meeting – Cancun 2006
DLTS study of RT defect annealing in n-type Si – 3 / 10
Experimental details
p + -n−-n+ Si diodes
produced from high-purity
MCz wafers (5 × 1012 P/cm3 )
ordinary diode processing
(submerged in 10% HF at 50 °C for
1
2
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
h)
0.3 mm
Al
SiO2
p+
n−
5 × 1012 P/cm3
n+
7 mm
210th ECS Meeting – Cancun 2006
DLTS study of RT defect annealing in n-type Si – 3 / 10
Experimental details
0.3 mm
p + -n−-n+ Si diodes
produced from high-purity
MCz wafers (5 × 1012 P/cm3 )
ordinary diode processing
(submerged in 10% HF at 50 °C for
(annealed at 450 °C for 1 h in N 2 )
1
2
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
h)
Al
SiO2
p+
n−
5 × 1012 P/cm3
n+
7 mm
210th ECS Meeting – Cancun 2006
DLTS study of RT defect annealing in n-type Si – 3 / 10
Experimental details
0.3 mm
p + -n−-n+ Si diodes
produced from high-purity
MCz wafers (5 × 1012 P/cm3 )
ordinary diode processing
(submerged in 10% HF at 50 °C for
(annealed at 450 °C for 1 h in N 2 )
6-MeV electron irradiation at RT:
5 × 1012 cm−2
1
2
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
h)
Al
SiO2
p+
n−
5 × 1012 P/cm3
n+
7 mm
210th ECS Meeting – Cancun 2006
DLTS study of RT defect annealing in n-type Si – 3 / 10
Experimental details
0.3 mm
p + -n−-n+ Si diodes
produced from high-purity
MCz wafers (5 × 1012 P/cm3 )
ordinary diode processing
(submerged in 10% HF at 50 °C for
(annealed at 450 °C for 1 h in N 2 )
6-MeV electron irradiation at RT:
5 × 1012 cm−2
oxygen concentration:
5–10 × 1017 cm−3
1
2
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
h)
Al
SiO2
p+
n−
5 × 1012 P/cm3
n+
7 mm
210th ECS Meeting – Cancun 2006
DLTS study of RT defect annealing in n-type Si – 3 / 10
DLTS measurements
(2 · DLTS signal · Nd /(Cr · F2))/cm−3
11
8×10
−1
Lock in, (640 ms)
MCz Si
175 h after irradiation
11
6×10
VO
11
4×10
V2(=/−)
E4
V2(−/0)
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
11
2×10
0
100
210th ECS Meeting – Cancun 2006
150
Temperature/K
200
DLTS study of RT defect annealing in n-type Si – 4 / 10
DLTS measurements
11
(2 · DLTS signal · Nd /(Cr · F2))/cm−3
3×10
VO
2×10
Lock in, (640 ms)
MCz Si
1
×
4
11
−1
175 h after irradiation
V2(=/−)
E4
V2(−/0)
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
11
1×10
0
100
210th ECS Meeting – Cancun 2006
150
Temperature/K
200
DLTS study of RT defect annealing in n-type Si – 4 / 10
DLTS measurements
11
(2 · DLTS signal · Nd /(Cr · F2))/cm−3
3×10
VO
2×10
Lock in, (640 ms)
MCz Si
1
×
4
11
−1
V2(=/−)
175 h after irradiation
2 036 h after irradiation
E4
V2(−/0)
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
11
1×10
0
100
210th ECS Meeting – Cancun 2006
150
Temperature/K
200
DLTS study of RT defect annealing in n-type Si – 4 / 10
DLTS measurements
11
(2 · DLTS signal · Nd /(Cr · F2))/cm−3
3×10
VO
2×10
Lock in, (640 ms)
MCz Si
1
×
4
11
−1
V2(=/−)
175 h after irradiation
2 036 h after irradiation
E4
V2(−/0)
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
11
1×10
0
100
150
Temperature/K
200
E4 anneals
210th ECS Meeting – Cancun 2006
DLTS study of RT defect annealing in n-type Si – 4 / 10
DLTS measurements
11
(2 · DLTS signal · Nd /(Cr · F2))/cm−3
3×10
VO
2×10
Lock in, (640 ms)
MCz Si
1
×
4
11
−1
V2(=/−)
175 h after irradiation
2 036 h after irradiation
E4
V2(−/0)
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
11
1×10
0
100
150
Temperature/K
200
E4 anneals
Amplitude of V2 (−/0) approaches amplitude of V2 (=/−)
210th ECS Meeting – Cancun 2006
DLTS study of RT defect annealing in n-type Si – 4 / 10
DLTS measurements
11
(2 · DLTS signal · Nd /(Cr · F2))/cm−3
3×10
VO
2×10
Lock in, (640 ms)
MCz Si
1
×
4
11
−1
V2(=/−)
175 h after irradiation
2 036 h after irradiation
E4
V2(−/0)
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
11
1×10
0
100
150
Temperature/K
200
E4 anneals
Amplitude of V2 (−/0) approaches amplitude of V2 (=/−)
[VO] increases
210th ECS Meeting – Cancun 2006
DLTS study of RT defect annealing in n-type Si – 4 / 10
Lock in vs. GS4
(2 · DLTS signal · ND /(Cr · F2))/cm−3
11
8×10
MCz Si 175 h after irradiation
−1
11
6×10
Lock in, (640 ms)
(window 6)
150
Temperature/K
200
11
4×10
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
11
2×10
0
100
210th ECS Meeting – Cancun 2006
DLTS study of RT defect annealing in n-type Si – 5 / 10
Lock in vs. GS4
(2 · DLTS signal · ND /(Cr · F2))/cm−3
11
8×10
MCz Si 175 h after irradiation
−1
Lock in, (640 ms)
11
6×10
−1
(window 6)
GS4, (640 ms)
(window 5)
150
Temperature/K
200
11
4×10
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
11
2×10
0
100
210th ECS Meeting – Cancun 2006
DLTS study of RT defect annealing in n-type Si – 5 / 10
Concentration plots
12
10
Trap concentration/cm
−3
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
VO (Lock in)
V2(=/−) (Lock in)
V2(−/0) (Lock in)
11
10
E4 (GS4)
10
4.1 × 10
cm
−3
−7
−2.3 × 10
·e
−1
s
·t
10
10
0
500
210th ECS Meeting – Cancun 2006
1 000
1 500
Annealing time/h
2 000
DLTS study of RT defect annealing in n-type Si – 6 / 10
Concentration plots
12
10
Trap concentration/cm
−3
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
VO (Lock in)
V2(=/−) (Lock in)
V2(−/0) (Lock in)
11
10
E4 (GS4)
10
4.1 × 10
cm
−3
−7
−2.3 × 10
·e
−1
s
·t
10
10
0
500
1 000
1 500
Annealing time/h
2 000
Amplitude of V2 (−/0) approaches amplitude of V2 (=/−)
210th ECS Meeting – Cancun 2006
DLTS study of RT defect annealing in n-type Si – 6 / 10
Concentration plots
12
10
Trap concentration/cm
−3
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
VO (Lock in)
V2(=/−) (Lock in)
V2(−/0) (Lock in)
11
10
E4 (GS4)
10
4.1 × 10
cm
−3
−7
−2.3 × 10
·e
−1
s
·t
10
10
0
500
1 000
1 500
Annealing time/h
2 000
Amplitude of V2 (−/0) approaches amplitude of V2 (=/−)
First-order annealing of E4
210th ECS Meeting – Cancun 2006
DLTS study of RT defect annealing in n-type Si – 6 / 10
Concentration plots
12
10
Trap concentration/cm
−3
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
VO (Lock in)
V2(=/−) (Lock in)
V2(−/0) (Lock in)
11
10
E4 (GS4)
10
4.1 × 10
cm
−3
−7
−2.3 × 10
·e
−1
s
·t
10
10
0
500
1 000
1 500
Annealing time/h
2 000
Assume dissociation of E4 with a pre-factor C0 = 1013 s−1
210th ECS Meeting – Cancun 2006
DLTS study of RT defect annealing in n-type Si – 6 / 10
Concentration plots
12
10
Trap concentration/cm
−3
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
VO (Lock in)
V2(=/−) (Lock in)
V2(−/0) (Lock in)
11
10
E4 (GS4)
10
4.1 × 10
cm
−3
−7
−2.3 × 10
·e
−1
s
·t
10
10
0
500
1 000
1 500
Annealing time/h
2 000
Assume dissociation of E4 with a pre-factor C0 = 1013 s−1
⇒ Dissociation barrier of 1.1(5) eV
210th ECS Meeting – Cancun 2006
DLTS study of RT defect annealing in n-type Si – 6 / 10
Concentration plots
VO
V2(=/−)
V2(−/0)
y=x
y = −x
−3
10
Change in concentration/cm
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
4×10
10
2×10
0
10
−2×10
10
−4×10
0
10
10
1×10
2×10
−3
Loss in E4 concentration/cm
210th ECS Meeting – Cancun 2006
10
3×10
DLTS study of RT defect annealing in n-type Si – 6 / 10
Difference of DLTS spectra
To detect small changes in defect concentrations:
Take the difference of two DLTS spectra
11
(2 · DLTS signal · Nd /(Cr · F2))/cm−3
3×10
×1
4
VO
11
2×10
−1
Lock in, (640 ms)
MCz Si
V2(=/−)
175 h after irradiation
2 036 h after irradiation
E4
V2(−/0)
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
11
1×10
0
100
150
Temperature/K
200
210th ECS Meeting – Cancun 2006
DLTS study of RT defect annealing in n-type Si – 7 / 10
Difference of DLTS spectra
11
(2 · DLTS signal · Nd /(Cr · F2))/cm−3
3×10
11
2×10
Lock in, (640 ms)
MCz Si
×1
4
VO
−1
V2(=/−)
175 h after irradiation
2 036 h after irradiation
E4
V2(−/0)
11
1×10
0
100
150
Temperature/K
200
210th ECS Meeting – Cancun 2006
Difference of (2 · DLTS signal · Nd /(Cr · F2))/cm
−3
To detect small changes in defect concentrations:
Take the difference of two DLTS spectra
10
4×10
−1
Lock in, (640 ms)
C175 h − C2 036 h
MCz Si
10
3×10
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
10
2×10
V2(=/−)
10
1×10
0
100
E4
150
V2(−/0)
200
Temperature/K
250
DLTS study of RT defect annealing in n-type Si – 7 / 10
Difference of DLTS spectra
11
(2 · DLTS signal · Nd /(Cr · F2))/cm−3
3×10
11
2×10
Lock in, (640 ms)
MCz Si
×1
4
VO
−1
V2(=/−)
175 h after irradiation
2 036 h after irradiation
E4
V2(−/0)
11
1×10
0
100
150
Temperature/K
200
Difference of (2 · DLTS signal · Nd /(Cr · F2))/cm
−3
To detect small changes in defect concentrations:
Take the difference of two DLTS spectra
10
4×10
−1
Lock in, (640 ms)
C175 h − C2 036 h
MCz Si
10
3×10
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
10
2×10
V2(=/−)
10
1×10
0
100
E4
150
V2(−/0)
200
Temperature/K
250
V2 (−/0) has an overlapping peak E5
210th ECS Meeting – Cancun 2006
DLTS study of RT defect annealing in n-type Si – 7 / 10
Difference of DLTS spectra
11
(2 · DLTS signal · Nd /(Cr · F2))/cm−3
3×10
11
2×10
Lock in, (640 ms)
MCz Si
×1
4
VO
−1
V2(=/−)
175 h after irradiation
2 036 h after irradiation
E4
V2(−/0)
11
1×10
0
100
150
Temperature/K
200
Difference of (2 · DLTS signal · Nd /(Cr · F2))/cm
−3
To detect small changes in defect concentrations:
Take the difference of two DLTS spectra
10
4×10
−1
Lock in, (640 ms)
C175 h − C2 036 h
MCz Si
10
3×10
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
10
2×10
V2(=/−)
10
1×10
0
100
E4
150
V2(−/0)
200
Temperature/K
250
V2 (−/0) has an overlapping peak E5
[E5] = [E4]
210th ECS Meeting – Cancun 2006
DLTS study of RT defect annealing in n-type Si – 7 / 10
Difference of (2 · DLTS signal · Nd /(Cr · F2))/cm
−3
Difference of DLTS spectra
10
4×10
−1
Lock in, (640 ms)
C78 h − C2 036 h
MCz Si
10
C499 h − C2 036 h
3×10
C1 111 h − C2 036 h
E5
10
2×10
V2(=/−)
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
10
1×10
0
100
E4
150
V2(−/0)
200
Temperature/K
250
[E5] = [E4] at all annealing times
210th ECS Meeting – Cancun 2006
DLTS study of RT defect annealing in n-type Si – 7 / 10
Difference of (2 · DLTS signal · Nd /(Cr · F2))/cm
−3
Difference of DLTS spectra
10
4×10
−1
Lock in, (640 ms)
C78 h − C2 036 h
MCz Si
10
C499 h − C2 036 h
3×10
C1 111 h − C2 036 h
E5
10
2×10
V2(=/−)
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
10
1×10
0
100
E4
150
V2(−/0)
200
Temperature/K
250
[E5] = [E4] at all annealing times
E4: Ec − Et = 0.37 eV
E5: Ec − Et = 0.45 eV
210th ECS Meeting – Cancun 2006
DLTS study of RT defect annealing in n-type Si – 7 / 10
Proton irradiation
High-purity, low-doped, FZ Si irradiated at RT with 7-MeV
protons to 4 × 1010 cm−2
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
Monakhov et al., Phys. Rev. B 65 (2002) 233207
210th ECS Meeting – Cancun 2006
DLTS study of RT defect annealing in n-type Si – 8 / 10
Discussion
E4 and E5 always observed with the same concentration
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
DLTS study of RT defect annealing in n-type Si – 9 / 10
Discussion
E4 and E5 always observed with the same concentration
⇒ Two charge states of one defect?
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
DLTS study of RT defect annealing in n-type Si – 9 / 10
Discussion
E4 and E5 always observed with the same concentration
⇒ Two charge states of one defect?
E4 and E5 are not caused by
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
DLTS study of RT defect annealing in n-type Si – 9 / 10
Discussion
E4 and E5 always observed with the same concentration
⇒ Two charge states of one defect?
E4 and E5 are not caused by
high or low oxygen concentration
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
DLTS study of RT defect annealing in n-type Si – 9 / 10
Discussion
E4 and E5 always observed with the same concentration
⇒ Two charge states of one defect?
E4 and E5 are not caused by
high or low oxygen concentration
hydrogenation
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
DLTS study of RT defect annealing in n-type Si – 9 / 10
Discussion
E4 and E5 always observed with the same concentration
⇒ Two charge states of one defect?
E4 and E5 are not caused by
high or low oxygen concentration
hydrogenation
annealing prior to the irradiation
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
DLTS study of RT defect annealing in n-type Si – 9 / 10
Discussion
E4 and E5 always observed with the same concentration
⇒ Two charge states of one defect?
E4 and E5 are not caused by
high or low oxygen concentration
hydrogenation
annealing prior to the irradiation
E4 and E5 are generated both by 6-MeV electrons and
7-MeV protons
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
DLTS study of RT defect annealing in n-type Si – 9 / 10
Discussion
E4 and E5 always observed with the same concentration
⇒ Two charge states of one defect?
E4 and E5 are not caused by
high or low oxygen concentration
hydrogenation
annealing prior to the irradiation
E4 and E5 are generated both by 6-MeV electrons and
7-MeV protons
Annealing of E4/E5 ⇒ Increased VO concentration
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
DLTS study of RT defect annealing in n-type Si – 9 / 10
Discussion
Hypothesis:
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
DLTS study of RT defect annealing in n-type Si – 9 / 10
Discussion
Hypothesis:
E4/E5 are energy levels of X, which dissociates in
X → Y + VO
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
DLTS study of RT defect annealing in n-type Si – 9 / 10
Discussion
Hypothesis:
E4/E5 are energy levels of X, which dissociates in
X → Y + VO
Y=V
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
DLTS study of RT defect annealing in n-type Si – 9 / 10
Discussion
Hypothesis:
E4/E5 are energy levels of X, which dissociates in
X → Y + VO
Y = V ⇒ X = V2 O
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
DLTS study of RT defect annealing in n-type Si – 9 / 10
Discussion
Hypothesis:
E4/E5 are energy levels of X, which dissociates in
X → Y + VO
Y = V ⇒ X = V2 O
b
b
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
DLTS study of RT defect annealing in n-type Si – 9 / 10
Discussion
Hypothesis:
E4/E5 are energy levels of X, which dissociates in
X → Y + VO
Y = V ⇒ X = V2 O
Y=I
b
b
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
DLTS study of RT defect annealing in n-type Si – 9 / 10
Discussion
Hypothesis:
E4/E5 are energy levels of X, which dissociates in
X → Y + VO
Y = V ⇒ X = V2 O
Y = I ⇒ X = VOI
b
b
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
DLTS study of RT defect annealing in n-type Si – 9 / 10
Discussion
Hypothesis:
E4/E5 are energy levels of X, which dissociates in
X → Y + VO
Y = V ⇒ X = V2 O
Y = I ⇒ X = VOI ?
b
b
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
DLTS study of RT defect annealing in n-type Si – 9 / 10
Discussion
Hypothesis:
E4/E5 are energy levels of X, which dissociates in
X → Y + VO
b
b
Y = V ⇒ X = V2 O
Y = I ⇒ X = VOI ?
If E4/E5 is VOI, which dissociates to VO + I,
should the generation not depend on the oxygen
concentration?
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
DLTS study of RT defect annealing in n-type Si – 9 / 10
Summary
Two defect levels, E4 and E5, generated by electron or
proton irradiation, anneal at RT
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
DLTS study of RT defect annealing in n-type Si – 10 / 10
Summary
Two defect levels, E4 and E5, generated by electron or
proton irradiation, anneal at RT
E4 and E5 may be two charge states of the same defect
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
DLTS study of RT defect annealing in n-type Si – 10 / 10
Summary
Two defect levels, E4 and E5, generated by electron or
proton irradiation, anneal at RT
E4 and E5 may be two charge states of the same defect
The annealing of E4 and E5 gives a corresponding
increase of VO
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
DLTS study of RT defect annealing in n-type Si – 10 / 10
Summary
Two defect levels, E4 and E5, generated by electron or
proton irradiation, anneal at RT
E4 and E5 may be two charge states of the same defect
The annealing of E4 and E5 gives a corresponding
increase of VO
We see no obvious identification of E4/E5
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
DLTS study of RT defect annealing in n-type Si – 10 / 10
Summary
Two defect levels, E4 and E5, generated by electron or
proton irradiation, anneal at RT
E4 and E5 may be two charge states of the same defect
The annealing of E4 and E5 gives a corresponding
increase of VO
We see no obvious identification of E4/E5
LATEX
powerdot
www.latex-project.org
stuwww.uvt.nl/˜hendri
210th ECS Meeting – Cancun 2006
Outline
Experimental details
DLTS meas’ments
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
www.gnu.org
DLTS study of RT defect annealing in n-type Si – 10 / 10